JPH02239621A - Vacuum chuck device - Google Patents
Vacuum chuck deviceInfo
- Publication number
- JPH02239621A JPH02239621A JP6011689A JP6011689A JPH02239621A JP H02239621 A JPH02239621 A JP H02239621A JP 6011689 A JP6011689 A JP 6011689A JP 6011689 A JP6011689 A JP 6011689A JP H02239621 A JPH02239621 A JP H02239621A
- Authority
- JP
- Japan
- Prior art keywords
- suction plate
- bump
- wafer
- suction
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 230000035939 shock Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 35
- 229910000679 solder Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、バンプが形成された半導体ウェーハの裏面
研削加工時に咳ウェーハを吸着面に吸引，保持する真空
チャック装ｌであって、平面に形成されて吸着面を形成
する表面と裏面との間が細孔を介して連通ずる吸着板と
、該吸着板を周縁部で支持するとともに該吸着板の裏面
側に該裏面を壁面の一部とする密閉空間を形成するテー
ブルと、前記密閉空間内の圧力を真空圧に減圧する真空
ポンプとを備え、該真空ポンプを運転して前記密閉空間
の圧力を真空圧に減圧しつつバンプが形成された半導体
ウェーハをパンブ側の面を吸引して前記吸着板の表面に
吸着する真空チャック装置に関する．ここで、上記バン
プは、半導体基板上に形成された金属膜に外部のリード
線を接続するために該金属膜に接合して形成されたパッ
ドであり、？部リード線との接合部がはんだであるはん
だバンプの場合には例えば第７図のような断面構造を有
する．図において、符号２０はシリコン基板を示し、こ
の基板上に形成されたＳｉＯ■絶縁膜２ｌａ上にＭから
なる金属膜２２が形成され、この金属膜２２上に形成さ
れたＳｉｎｇ絶縁膜２ｌｂに形成された孔の位置で、金
属膜２２上に、Ｓ１０１絶縁膜との接合性も良好なＣｒ
層２３と、Ｃｒ／Ｃｕ層２４とが順に形成され、最上部
に外部リード線に融着されるＰｂ−Ｓｎすなわちはんだ
座２５が形成されている．
〔従来の技術〕
第５図に従来の真空チャック装置の構成例と、この装置
構成によるはんだバンプ付き半導体ウェーハの吸着方法
とを示す．多孔質セラミックス板または吸引孔を有する
金属板（図は多孔賞セラミックス板の場合を示す）から
なる吸着板４の上面は平面に形成され、テーブル８の周
壁上面に固設された保持リング７に嵌め込まれている．
保持リング７は上面が吸着板４の上面と同一平面を形成
するよう、吸着板４と同じ厚さに形成されている．テー
ブル８の周壁により吸着板裏面側には該裏面を壁面の一
部とする密閉空間８ａが形成され、この密閉空間８ａは
排気管８ｂを介して真空ボンプ１０の排気空間に連通し
ている．なお、図中の符号９はテーブル８を回転駆動す
るためのモータであり真空チャック装置の一部を構成す
る．
このような装置構成ではんだバンプ２が形成された半導
体ウェーハ１を吸着板４の上面に吸着する際、半導体ウ
エーハ１を直接吸着しようとしても、はんだバンプが存
在するため、吸着板との間にギャップが形成され、真空
ポンプ１０により減圧された密閉空間８ａ内へ吸い込ま
れる吸着板上面側の空気がこのギャップを自由に通過し
、半導体ウェーハ１のバンプ側の面に半導体ウェーハ裏
面側を研削加工可能に保持しうる負圧を生じない．この
ため、粘着シ一ト１１をはんだバンプが形成されている
面に貼り付け、この粘着シートを介して真空吸着し、裏
面加工を行っていた．
なお、粘着シートを用いた裏面研削加工は、バンプが形
成されていない通常の半導体ウエーハにおいても、加工
時の衝撃の緩和とウェーハ面に形成されている素子の保
護とのために一般に行われている．
Ｃ発明が解決しようとする課題〕
バンプが形成された半導体ウェーハを粘着シートを介し
て平面をなす吸着面に吸着する際の問題点は次の通りで
ある．すなわち、粘着シートを介して吸着面に吸着する
際に、第６図の拡大図に示すように、バンプを介して半
導体ウェーハのバンプまわりが相対的に上方へ押し退け
られ、このため半導体ウェーハと粘着シートとの接触面
積が減少し、最悪の場合には、接線方向すなわち研削面
方向の研削力によりウェーハが飛ばされてしまうことが
ある．さらに、吸着板の表面は研削加工時の寸法基準面
となるため、この面に倣って各バンプの頂点が粘着シー
トを介して吸着板に押し付けられる．従って、バンプの
高さにばらつきがある場合には、このばらつきが半導体
ウェーハの厚さの精度（厚さの絶対値および面内の厚さ
のばらつき）に影響を与え、目的とする加工精度を得る
ことが困難であワた．
この発明の月的は、バンプが形成された半導体ウェーハ
のバンプ側の面を、ウェーハ裏面の研削加工に十分な強
さに吸着板表面に吸引，保持することができかつ、研削
加工時の所望の厚さ精度を容易に実現しうる真空チャッ
ク装置を提供することである．
〔課題を解決するための手段〕
上記課題を解決するために、この発明においては、平面
に形成されて吸着面を形成する吸着板表面に半導体ウェ
ーハのバンプのパターンと合致するバンプ逃げ溝を形成
するものとする．なお、吸着板表面をバンプ逃げ溝を除
いてフィルムにより密に覆うようにしても良い．また、
吸着板は多孔性の硬質プラスティックスで形成しても良
い．〔作用〕
このように、吸着面を形成する吸着板表面にバンプの逃
げ溝を形成すると、半導体ウェーハのバンプ側の面を吸
引したときにバンプがバンプ逃げ溝にはまり込み、半導
体ウェーハのバンプ側の面が全面、吸着板表面に密着し
た状態に吸引され、吸着板に強固に保持されるとともに
、バンプの高さにばらつきがあってもこのばらつきの影
響がなくなり、所望の厚さ精度の研削加工が容易に可能
となる．吸着板表面をバンプ逃げ溝を除いてフィルムに
より密に覆うと、研削加工時のウェーハへの衝撃が緩和
される．また吸着板を多孔性の硬質プラスティックスで
形成すると、吸着板に占める細孔部分の面積が小さくな
り、ウェーハ全面が吸着板により強固に吸着される．
〔実施例〕
第１図および第２図に本発明の第１の実施例を示す．図
中、第５図と同一の部材には同一符号を付し、説明を省
略する．金属板からなる吸着板１４の表面には、第２図
に示すように、半導体ウエーハ１に形成されたバンプ２
のパターンと合致する，深さがバンプ２の高さよりも深
いバンプ逃げ溝５が形成され、この吸着板表面と保持リ
ング７の上面とからなる平面には、研削加工時のウエー
ハへの衝撃の緩和とウェーハ上に形成された素子の保護
とのため、バンプ逃げ溝５を除いて厚さが５０〜６０１
ｒＩｌ程度のフィルム３が一様に貼られている。真空ポ
ンプ１０を起動させると、半導体ウェーハ１とバンプ逃
げ溝５とにより形成されている空間内の空気が吸引孔６
から密閉空間８ａ内に吸入され、半導体ウェーハ１はバ
ンプを除くバンプ側の面全面をフィルム面に当接させた
状態に強固に吸引，保この実施例が第１の実施例と異な
るところは、吸着板１５を多孔性の硬質プラスティック
スで形成し、また金属板との硬さのちがいからフィルム
を省略した点である．この場合には、第１の実施例と比
較し、半導体ウェーハ１のバンプ側の面全面がより均一
に吸着力を受け、より強固に吸着板表面に吸着される．
〔発明の効果〕
以上に述べたように、本発明によれば、吸着面を形成す
る吸着板表面に半導体ウェーハのバンプのパターンと合
致するバンプ逃げ溝を形成したので、半導体ウェーハが
バンプ側の面全面が吸着板表面に密着した状態に吸引さ
れ、バンプの高さにばらつきがあってもこの影響を受け
ることなく安定した，強力な吸着力が得られるとともに
、裏面研削加工における半導体ウェー八の厚さ精度を向
上させることが容易に可能となる．さらに、従来のよう
に粘着シートを用いないので、加工後の剥離作業も不要
となる。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is a vacuum chuck device for sucking and holding a wafer on a suction surface during backside grinding of a semiconductor wafer on which bumps are formed. A suction plate in which the front surface and the back surface that are formed to form a suction surface communicate with each other through pores, and the suction plate is supported at the peripheral edge and the back surface is attached to a part of the wall surface on the back side of the suction plate. a table that forms a sealed space, and a vacuum pump that reduces the pressure in the sealed space to vacuum pressure, and the bump is formed while operating the vacuum pump to reduce the pressure in the sealed space to vacuum pressure. The present invention relates to a vacuum chuck device that sucks a semiconductor wafer that has been processed by vacuum onto the surface of the suction plate by suctioning the pan side surface. Here, the bump is a pad formed on a metal film formed on a semiconductor substrate in order to connect an external lead wire to the metal film, and ? For example, in the case of a solder bump whose joint with a lead wire is made of solder, it has a cross-sectional structure as shown in Fig. 7, for example. In the figure, reference numeral 20 indicates a silicon substrate, a metal film 22 made of M is formed on a SiO2 insulating film 2la formed on this substrate, and a Sing insulating film 2lb formed on this metal film 22 is formed. At the position of the hole, a Cr layer with good bonding properties with the S101 insulating film is placed on the metal film 22.
A layer 23 and a Cr/Cu layer 24 are formed in this order, and a Pb-Sn or solder seat 25 is formed at the top to be fused to an external lead wire. [Prior Art] Fig. 5 shows an example of the configuration of a conventional vacuum chuck device and a method of suctioning a semiconductor wafer with solder bumps using this device configuration. The upper surface of the suction plate 4, which is made of a porous ceramic plate or a metal plate with suction holes (the figure shows the case of a porous ceramic plate), is formed into a flat surface, and is attached to a retaining ring 7 fixed to the upper surface of the peripheral wall of the table 8. It is embedded.
The retaining ring 7 is formed to have the same thickness as the suction plate 4 so that its upper surface forms the same plane as the upper surface of the suction plate 4. A closed space 8a is formed on the back side of the suction plate by the peripheral wall of the table 8, with the back surface being part of the wall, and this closed space 8a communicates with the exhaust space of the vacuum pump 10 via an exhaust pipe 8b. Note that the reference numeral 9 in the figure is a motor for rotating the table 8, and constitutes a part of the vacuum chuck device. When the semiconductor wafer 1 on which the solder bumps 2 are formed is suctioned onto the upper surface of the suction plate 4 with such an apparatus configuration, even if an attempt is made to directly suction the semiconductor wafer 1, the presence of the solder bumps causes a gap between the suction plate and the suction plate. A gap is formed, and the air on the upper surface side of the suction plate sucked into the sealed space 8a, which is depressurized by the vacuum pump 10, freely passes through this gap, and the back side of the semiconductor wafer 1 is ground on the bump side surface of the semiconductor wafer 1. Does not create negative pressure that can be maintained. For this reason, an adhesive sheet 11 was attached to the surface on which the solder bumps were formed, and vacuum suction was carried out through this adhesive sheet to process the back surface. Note that backside grinding using an adhesive sheet is generally performed even on normal semiconductor wafers without bumps, in order to cushion the impact during processing and protect the elements formed on the wafer surface. There is. Problems to be Solved by the Invention C] The problems when adhering a semiconductor wafer with bumps to a flat adsorption surface via an adhesive sheet are as follows. That is, when the semiconductor wafer is attracted to the suction surface through the adhesive sheet, as shown in the enlarged view of FIG. The contact area with the sheet decreases, and in the worst case, the wafer may be blown away by the grinding force in the tangential direction, that is, the direction of the grinding surface. Furthermore, since the surface of the suction plate serves as a dimensional reference surface during the grinding process, the top of each bump is pressed against the suction plate via the adhesive sheet, following this surface. Therefore, if there is variation in bump height, this variation will affect the accuracy of the thickness of the semiconductor wafer (absolute thickness value and in-plane thickness variation), and the desired processing accuracy will be achieved. It was difficult to obtain. The main feature of this invention is that the bump-side surface of a semiconductor wafer on which bumps are formed can be suctioned and held on the suction plate surface with sufficient strength for grinding the back surface of the wafer, and that The purpose of the present invention is to provide a vacuum chuck device that can easily achieve thickness accuracy of . [Means for Solving the Problems] In order to solve the above problems, in the present invention, bump relief grooves that match the bump pattern of the semiconductor wafer are formed on the surface of the suction plate which is formed into a flat surface and forms a suction surface. It shall be. Note that the surface of the suction plate may be covered tightly with a film, except for the bump relief grooves. Also,
The suction plate may be made of porous hard plastic. [Function] In this way, when the bump relief groove is formed on the surface of the suction plate that forms the suction surface, when the bump side surface of the semiconductor wafer is sucked, the bump gets stuck in the bump relief groove, and the bump side of the semiconductor wafer is sucked. The entire surface of the bump is suctioned in close contact with the surface of the suction plate, and is firmly held on the suction plate, and even if there is variation in bump height, the influence of this variation is eliminated, allowing grinding with the desired thickness accuracy. Processing becomes possible easily. By densely covering the surface of the suction plate with a film, except for the bump relief grooves, the impact on the wafer during grinding is alleviated. Furthermore, when the suction plate is made of porous hard plastic, the area occupied by the pores on the suction plate becomes smaller, and the entire surface of the wafer is firmly adsorbed by the suction plate. [Embodiment] Figures 1 and 2 show a first embodiment of the present invention. In the figure, the same members as in FIG. 5 are designated by the same reference numerals, and their explanations will be omitted. As shown in FIG. 2, bumps 2 formed on the semiconductor wafer 1 are formed on the surface of the suction plate 14 made of a metal plate.
A bump relief groove 5 is formed which is deeper than the height of the bump 2 and matches the pattern shown in FIG. For relaxation and protection of elements formed on the wafer, the thickness is 50 to 60 mm excluding the bump relief groove 5.
A film 3 of about rIl is uniformly pasted. When the vacuum pump 10 is started, the air in the space formed by the semiconductor wafer 1 and the bump escape groove 5 flows into the suction hole 6.
The semiconductor wafer 1 is sucked into the sealed space 8a, and the semiconductor wafer 1 is strongly sucked and held in a state in which the entire surface of the bump side excluding the bumps is in contact with the film surface. This embodiment differs from the first embodiment in the following points. The suction plate 15 is made of porous hard plastic, and the film is omitted due to the difference in hardness from the metal plate. In this case, compared to the first embodiment, the entire surface of the semiconductor wafer 1 on the bump side receives the suction force more uniformly and is more firmly adsorbed to the surface of the suction plate. [Effects of the Invention] As described above, according to the present invention, bump relief grooves that match the bump pattern of the semiconductor wafer are formed on the surface of the suction plate forming the suction surface, so that the semiconductor wafer is The entire surface of the suction plate is suctioned in close contact with the surface of the suction plate, and even if there are variations in bump height, a stable and strong suction force is obtained without being affected by this. This makes it easy to improve thickness accuracy. Furthermore, since an adhesive sheet is not used as in the past, there is no need for peeling work after processing.
また、第１の実施例のように、吸着板を金属製とするか
，あるいはセラミックス製とし、バンプ逃げ溝を除く部
分をフィルムにより密に覆うことにより、高い平面度を
有する，剛性の高い吸着面を形成することができ、大口
径の半導体ウェーハを衝撃を与えることなく高い厚さ精
度で研削加工可能な真空チャック装置とすることができ
る．また、第２の実施例のように、吸着板を多孔性の硬
質プラスティックスで形成すれば、ウヱーハの直接的な
吸引面積が大きくなり、ウエーハをより強固に吸着する
ことができる．また、吸着板がプラステイフクス製であ
ることから研削加工時の衝撃が緩和され、ウェーハ面上
の素子が傷つけられることもなくなるため、吸着面のフ
ィルムが不要となり、真空チャック装置の形成がＳ易と
なるメリットが生じる．In addition, as in the first embodiment, the suction plate is made of metal or ceramics, and the portions other than the bump relief grooves are tightly covered with a film, so that the suction plate has high flatness and high rigidity. A vacuum chuck device that can grind large-diameter semiconductor wafers with high thickness accuracy without applying impact can be created. Furthermore, if the suction plate is made of porous hard plastic as in the second embodiment, the direct suction area for the wafer will be increased, and the wafer can be more firmly suctioned. In addition, since the suction plate is made of Plastifux, the impact during the grinding process is alleviated and the elements on the wafer surface are not damaged, so there is no need for a film on the suction surface, and the formation of the vacuum chuck device is simplified. This has the advantage of making it easier.
第１図は本発明の第１の実施例による真空チャック装置
の要部構成を示す断面図、第２図は第１図における吸着
板の上面図、第３図は本発明の第２の実施例による真空
チャック装置の要部構成を示す断面図、第４図は第３図
における吸着板の上面図、第５図は従来の真空チャック
装置要部の構成例を示す断面図、第６図は第５図に示す
真空チャック装置によるはんだバンプ付き半導体ウェー
ハ吸着時のバンプまわりの状態を示す拡大断面図、第７
図ははんだバンプの断面構造例を示す断面図である．
１：半導体ウェーハ、２：バンプ、３：フィルム、４，
１４．１５ ：吸着板、５：バンプ逃げ溝、６：吸引
孔（細孔） ８：テーブル、８ａ：密閉空間、第
ｌ
図
第２図
第３図
第
図FIG. 1 is a sectional view showing the configuration of main parts of a vacuum chuck device according to a first embodiment of the present invention, FIG. 2 is a top view of the suction plate in FIG. 1, and FIG. 3 is a second embodiment of the present invention. 4 is a top view of the suction plate in FIG. 3; FIG. 5 is a sectional view showing an example of the configuration of the main parts of a conventional vacuum chuck device; FIG. 7 is an enlarged sectional view showing the state around the solder bumps when the semiconductor wafer with solder bumps is attracted by the vacuum chuck device shown in FIG.
The figure is a cross-sectional view showing an example of the cross-sectional structure of a solder bump. 1: semiconductor wafer, 2: bump, 3: film, 4,
14.15: Adsorption plate, 5: Bump escape groove, 6: Suction hole (pore) 8: Table, 8a: Closed space, Figure l Figure 2 Figure 3 Figure
Claims (1)
間が細孔を介して連通する吸着板と、該吸着板を周縁部
で支持するとともに該吸着板の裏面側に該裏面を壁面の
一部とする密閉空間を形成するテーブルと、前記密閉空
間内の圧力を真空圧に減圧する真空ポンプとを備え、該
真空ポンプを運転して前記密閉空間の圧力を真空圧に減
圧しつつバンプが形成された半導体ウェーハをバンプ側
の面を吸引して前記吸着板の表面に吸着する真空チャッ
ク装置において、前記吸着板の表面に前記半導体ウェー
ハのバンプのパターンと合致するバンプ逃げ溝が形成さ
れたことを特徴とする真空チャック装置。 ２）請求項第１項に記載の真空チャック装置において、
吸着板の表面がバンプの逃げ溝を除いてフィルムにより
密に覆われていることを特徴とする真空チャック装置。 ３）請求項第１項に記載の真空チャック装置において、
吸着板が多孔性の硬質プラスティックスで形成されてい
ることを特徴とする真空チャック装置。[Scope of Claims] 1) A suction plate that is formed into a plane and has a front surface and a back surface that communicate with each other through pores, and a suction plate that supports the suction plate at its peripheral edge and that A table that forms a sealed space with the back surface as part of the wall on the back side, and a vacuum pump that reduces the pressure in the sealed space to vacuum pressure, and operates the vacuum pump to reduce the pressure in the sealed space. In a vacuum chuck device that sucks a bump-side surface of a semiconductor wafer on which bumps are formed while reducing the pressure to a vacuum pressure, and sucks the semiconductor wafer onto the surface of the suction plate, the bump pattern of the semiconductor wafer is formed on the surface of the suction plate. A vacuum chuck device characterized in that matching bump escape grooves are formed. 2) In the vacuum chuck device according to claim 1,
A vacuum chuck device characterized in that the surface of the suction plate is densely covered with a film except for the escape grooves of the bumps. 3) In the vacuum chuck device according to claim 1,
A vacuum chuck device characterized in that a suction plate is made of porous hard plastic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6011689A JPH02239621A (en) | 1989-03-13 | 1989-03-13 | Vacuum chuck device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6011689A JPH02239621A (en) | 1989-03-13 | 1989-03-13 | Vacuum chuck device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02239621A true JPH02239621A (en) | 1990-09-21 |
Family
ID=13132829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6011689A Pending JPH02239621A (en) | 1989-03-13 | 1989-03-13 | Vacuum chuck device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02239621A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004510334A (en) * | 2000-09-27 | 2004-04-02 | ストラスバウ | Method for back-polishing a wafer while leaving a back polishing tape on the chuck |
| US7135124B2 (en) * | 2003-11-13 | 2006-11-14 | International Business Machines Corporation | Method for thinning wafers that have contact bumps |
| JP2011029300A (en) * | 2009-07-23 | 2011-02-10 | Disco Abrasive Syst Ltd | Chuck table of grinding device |
| WO2013049476A1 (en) * | 2011-09-30 | 2013-04-04 | Electro Scientific Industries, Inc. | Controlled surface roughness in vacuum retention |
| JP2015229206A (en) * | 2014-06-04 | 2015-12-21 | 株式会社ディスコ | Holding jig and method for processing plate-like material |
| US9224712B2 (en) | 2014-02-11 | 2015-12-29 | International Business Machines Corporation | 3D bond and assembly process for severely bowed interposer die |
-
1989
- 1989-03-13 JP JP6011689A patent/JPH02239621A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004510334A (en) * | 2000-09-27 | 2004-04-02 | ストラスバウ | Method for back-polishing a wafer while leaving a back polishing tape on the chuck |
| US7135124B2 (en) * | 2003-11-13 | 2006-11-14 | International Business Machines Corporation | Method for thinning wafers that have contact bumps |
| JP2011029300A (en) * | 2009-07-23 | 2011-02-10 | Disco Abrasive Syst Ltd | Chuck table of grinding device |
| WO2013049476A1 (en) * | 2011-09-30 | 2013-04-04 | Electro Scientific Industries, Inc. | Controlled surface roughness in vacuum retention |
| CN103843127A (en) * | 2011-09-30 | 2014-06-04 | 电子科学工业有限公司 | Controlled surface roughness in vacuum retention |
| US8960686B2 (en) | 2011-09-30 | 2015-02-24 | Electro Scientific Industries, Inc. | Controlled surface roughness in vacuum retention |
| US9224712B2 (en) | 2014-02-11 | 2015-12-29 | International Business Machines Corporation | 3D bond and assembly process for severely bowed interposer die |
| JP2015229206A (en) * | 2014-06-04 | 2015-12-21 | 株式会社ディスコ | Holding jig and method for processing plate-like material |
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