JP2000195826A - Method of dividing wafer and manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for dividing a wafer and a method for manufacturing a semiconductor device in which chipping is prevented at dicing. SOLUTION: Along a dicing line arranged in lattice-like manner on a wafer 21 on which a semiconductor element is formed, a groove deeper than the thickness of a completed chip is formed from a semiconductor-element-formed surface side, and a holding sheet 26 is stuck on the semiconductor-element-formed surface 21' in the wafer, and the rear surface of the wafer is ground to the thickness of the completed chip while both a grinding wheel 28 and the wafer are rotated, to divide the wafer into individual chips. Since the wafer is divided into individual chips by grinding the rear surface of the wafer, chipping at dicing is suppressed compared with conventional methods in which external force is applied for dividing, after dicing in a half cutting method, or cutting the sheet in full cutting method.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for dividing a wafer and a method for manufacturing a semiconductor device, and more particularly to a method for cutting and separating a semiconductor element formed on a wafer into individual chips and sealing the chips in an envelope. It is suitable for reducing the size and thickness of an envelope and increasing the diameter of a wafer in the process.

[0002]

2. Description of the Related Art A semiconductor device manufacturing process includes a process of forming various semiconductor element patterns on a wafer (semiconductor substrate), and a step of cutting and separating the semiconductor elements formed on the wafer into individual chips and enclosing them. It can be roughly divided into the step of sealing in a container. In recent years, the diameter of a wafer has been increased to reduce the manufacturing cost, and the size and thickness of the envelope have been desired to increase the mounting density. Conventionally, in order to seal in a thinner envelope, the surface (the back surface of the wafer) opposite to the pattern forming surface (the main surface) of the wafer is cut prior to cutting and separating the wafer into individual chips. It is removed by grinding with a grindstone, polishing with free abrasive grains, etc. to make it thinner, and then dicing to cut and separate. At the time of grinding, the wafer is protected by attaching an adhesive sheet to the pattern forming surface of the wafer or applying a resist or the like. Thereafter, a groove is formed in a cutting and separating (dicing) line region formed on the main surface of the wafer. In forming this groove, a diamond scriber, a diamond blade, a laser scriber, or the like is used. In the dicing process, the wafer is diced to a half of the thickness of the wafer alone or a half-cut method in which the wafer is diced to a state where the wafer remains about 30 μm. A half-cut method, a full-cut method of cutting an adhesive sheet to about 20 to 30 μm, and cutting the entire wafer thickness is used. The half-cut method requires a dividing operation. In the case of a single wafer, the wafer is sandwiched between flexible films or the like, and divided by applying an external force using a roller or the like. When affixed to the sheet, it is divided by applying an external force with a roller or the like over the tape. The divided chip is pushed up the back surface of the sheet by a pickup needle provided in the die bonding apparatus, penetrates this sheet and directly contacts the needle (needle) to the back surface of the chip, and further lifts up to separate the chip from the sheet. The separated chip is sucked on the chip surface with a tool called collet, mounted on the island of the lead frame, and then wire-bonded to electrically connect each pad of the chip to the inner lead portion of the lead frame, It is sealed in an envelope. As a method of mounting the chip on the island, a method of applying a conductive paste to the island in advance, a method of mounting using gold-silicon eutectic, and a metal thin film deposited on the back surface of the wafer, There is a mounting method using solder.

FIGS. 17 to 23 are for describing detailed examples of the above-described conventional wafer dividing method and semiconductor device manufacturing method, respectively.
Is a process of attaching a surface protection tape of a wafer, FIG.
19 is a step of grinding and polishing the back surface of the wafer, FIG. 19 is a step of peeling off the surface protection tape, FIGS. 20 (a) and (b) are steps of fixing the wafer to a fixing sheet, FIG. 21 is a dicing step of the wafer, FIG. 23 shows a step of picking up the separated chip, and FIG. 23 shows a die bonding step.

In FIGS. 17 to 23, reference numeral 1 denotes a wafer on which various semiconductor elements are formed, 1 'denotes a pattern forming surface (main surface of the wafer 1), 2 denotes a porous chuck table, and 3 denotes a protective tape for the pattern forming surface. Reference numeral 4 denotes an application roller, reference numeral 5 denotes a chuck table for grinding the back surface, reference numeral 6 denotes a grinding wheel, reference numeral 7 denotes a tape for peeling off the protective tape 3, and reference numeral 8 denotes a tape.
Denotes a flat ring, 9 denotes a wafer fixing sheet, 10
Is a dicing chuck table, 11 is a dicing blade, 12 is a chip after cutting and separation, 13 is a pickup needle, 14 is a lead frame island, 1
Reference numeral 5 denotes a die bonding adhesive such as a conductive paste.

First, as shown in FIG. 17, the back surface of a wafer 1 is fixed on a porous chuck table 2, and the protective tape 3 is moved in the direction of the arrow while rotating a sticking roller 4. Affix to the forming surface 1 '. Next, as shown in FIG. 18, the pattern forming surface 1 ′ with the protective tape 3 stuck thereon is fixed to the chuck table 5 with the pattern forming surface 1 ′ facing down, and the back surface of the wafer 1 is fixed to a predetermined thickness (completion Grinding and polishing to the final chip thickness at the time). Thereafter, as shown in FIG. 19, a tape 7 for peeling off the protective tape is attached to the protective tape 3,
The protective tape 3 is peeled off from the pattern forming surface 1 '. Next, a flat ring 8 as shown in FIG. 20 (a) is fixed to the wafer fixing sheet 9 to prevent the sheet 9 from becoming loose or wrinkled, and as shown in FIG. The chip 1 is fixed on the sheet 9 in the opening of the ring 8. Then, the sheet 9 to which the chips 1 are fixed and the flat ring 8 are fixed to a chuck table 10 for dicing, diced (full cut) by a dicing blade 11, and cut and separated into individual chips 12 (FIG. 21).
reference). Next, as shown in FIG. 22, the individual needles 12 are peeled from the sheet 9 by pushing the pickup needles 13 through the sheet 9 from below the sheet 9 to hit the back surface of the chip 12 and press it upward. As shown in (1), the lead frame is mounted on the island 14 using a die bonding adhesive such as a conductive paste. Thereafter, although not shown, the inner lead portion of the lead frame and each pad of the chip 12 are wire-bonded and sealed in a resin or ceramic envelope to complete the semiconductor device.

However, in the above-described wafer dividing method and semiconductor device manufacturing method, the following (a) to
There is a problem as shown in FIG.

(A) The wafer is liable to crack during thin grinding.
Even if grinding is performed with a protective tape applied, the wafer is warped due to distortion during grinding, and is thus caught or damaged during transport in the grinding device. In addition, since the strength of the wafer decreases as the wafer becomes thinner or larger in diameter, the probability of breakage increases in a method in which the wafer is thinned, and then the wafer is transported and subjected to various treatments as in the current situation. . For example, if the wafer is 400μ
m can withstand up to about 1.6 kgf / mm ^2, but when the thickness is 200 μm, 0.4 kgf / mm 2
^It decreases to ² and 1/4.

(B) Since two sheets are used for protecting the pattern formation surface and for holding the wafer during dicing, these steps of attaching, peeling, attaching, and the like are required, respectively, which increases the material cost and increases the manufacturing cost. The number of processes also increases.

(C) When dicing is performed, chipping on the back surface side of the wafer is increased, which causes a decrease in the die strength of the chip. Moreover, conventionally, various characteristics monitoring transistors, resistors, capacitors, etc.
G: Test Element Group) has been arranged in the chip, but has been arranged on a dicing line in order to achieve high integration. As is well known, these elements are made of an oxide film, aluminum, or the like, and are materials that easily cause clogging of a grindstone when dicing using a diamond blade and hinder sharpness. For this reason, TEG is placed on the dicing line.
Is arranged, the chipping on the back surface side of the wafer is further increased. In general, a material used as a semiconductor substrate is a brittle material such as silicon or GaAs. Therefore, if cracks or the like are present, the bending strength tends to decrease.

[0010]

As described above, the conventional method of dividing a wafer and the method of manufacturing a semiconductor device have a problem that the wafer is easily broken at the time of thin-wall grinding or transfer. Further, since two sheets are required for protecting the pattern formation surface and holding the wafer, there is a problem that the material cost is increased and the number of manufacturing steps is increased. Furthermore, when dicing is performed, there is a problem that chipping on the back surface side of the wafer becomes large, which causes a reduction in bending stress of the chip.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method of dividing a wafer and a method of manufacturing a semiconductor device capable of suppressing cracking of a wafer during thin grinding or transport. To provide.

It is another object of the present invention to provide a method of dividing a wafer and a method of manufacturing a semiconductor device, which can reduce the number of manufacturing steps and costs.

It is still another object of the present invention to provide a method of dividing a wafer and a method of manufacturing a semiconductor device, which can reduce chipping on the back surface side of a wafer and can suppress a decrease in chip bending stress.

[0014]

According to a first aspect of the present invention, there is provided a method of dividing a wafer along a dicing line of a wafer on which a semiconductor element is formed, from a surface on which the semiconductor element is formed to a completed chip. Forming a groove deeper than the thickness of the wafer, attaching a holding member on the surface of the wafer on which a semiconductor element is formed, and rotating the grinding wheel and the wafer to complete the back surface of the wafer. Grinding to the thickness of the chip at the time and separating the wafer into individual chips.

According to a second aspect of the present invention, there is provided a method of dividing a wafer along a dicing line of a wafer on which a semiconductor element is formed, from the side where the semiconductor element is formed, to a thickness of a completed chip. A step of forming a deep groove, a step of attaching a holding member on a surface of the wafer on which a semiconductor element is to be formed, and while rotating both the grinding wheel and the wafer, the back surface of the wafer is a chip of the completed chip. Grinding the wafer to a thickness and separating the wafer into individual chips, wherein the thickness of the completed chip is 290 μm or less.

As shown in claim 3, claim 1 or 2
3. The method for dividing a wafer according to 1., wherein a depth of the groove is at least 5 μm larger than a thickness of the completed chip.
It is characterized by being deep.

According to a fourth aspect, in the method of dividing a wafer according to any one of the first to third aspects,
While rotating both the grinding wheel and the wafer, grinding the back surface of the wafer to the thickness of the completed chip, separating the wafer into individual chips,
In a state where the grinding wheel is pressed against the wafer, while rotating both the grinding wheel and the wafer,
The back surface of the wafer is ground to the thickness of the completed chip, and the wafer is separated into individual chips.

According to a fifth aspect, in the method of dividing a wafer according to any one of the first to fourth aspects,
The holding member is at least one material selected from a wax, a suction pad, a thermocompression bonding sheet, a substrate coated with an adhesive, and a resist coated on the semiconductor element.

Further, according to the method of dividing a wafer according to the present invention, the thickness of the completed chip is determined along the dicing line of the wafer on which the semiconductor element is formed from the side where the semiconductor element is formed. A step of forming a deep groove, a step of attaching a holding member made of an adhesive sheet on a surface on which the semiconductor element is formed in the wafer, and grinding the back surface of the wafer to a thickness of the completed chip, and grinding the wafer. And a step of separating into individual chips.

According to a seventh aspect of the present invention, in the method of dividing a wafer according to the sixth aspect, the step of grinding the back surface of the wafer to the thickness of the completed chip and separating the wafer into individual chips includes: The method is characterized in that the back surface of the wafer is ground to the thickness of the completed chip while rotating both the grinding wheel and the wafer, and the wafer is separated into individual chips.

According to an eighth aspect of the present invention, in the method of dividing a wafer according to the seventh aspect, while rotating both the grinding wheel and the wafer, the back surface of the wafer is made to have a thickness of the completed chip. The step of grinding and separating the wafer into individual chips is performed while rotating both the grinding wheel and the wafer while the grinding wheel is pressed against the wafer, and completing the back surface of the wafer. It is characterized in that it is ground to the thickness of the chip at the time and separates the wafer into individual chips.

According to a ninth aspect, in the method for dividing a wafer according to any one of the sixth to eighth aspects,
The step of attaching a holding member made of an adhesive sheet on the surface on which the semiconductor elements are formed on the wafer is performed on the surface on which the semiconductor elements are formed on the wafer, from the adhesive sheet with an extremely thin film interposed therebetween. Characterized in that the holding member is attached.

According to a tenth aspect of the present invention, in the method of dividing a wafer according to the ninth aspect, the ultra-thin film is a film formed on a surface of the wafer on which semiconductor elements are formed. .

According to a method of manufacturing a semiconductor device according to the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: forming a semiconductor element on a main surface of a wafer; A step of forming a groove deeper than the above, a step of attaching a holding member made of an adhesive sheet on the surface of the wafer on which the semiconductor elements are formed, and rotating the grinding wheel and the wafer while rotating the wafer. Grinding the back surface of the chip to the thickness of the completed chip, separating the wafer into individual chips,
Peeling each separated chip from the adhesive sheet and sealing the chip in an envelope.

According to a twelfth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a semiconductor element on a main surface of a wafer; and forming the semiconductor element along a dicing line of the wafer on which the semiconductor element is formed. A step of forming a groove deeper than the thickness of the completed chip from the element forming surface side, a step of attaching a holding member made of an adhesive sheet on the semiconductor element forming surface of the wafer, and a grinding wheel While rotating both the wafer and the wafer, grinding the back surface of the wafer to the thickness of the completed chip, separating the wafer into individual chips, and peeling each separated chip from the adhesive sheet And sealing the chip to an envelope, wherein the thickness of the completed chip is 290 μm or less.

According to a thirteenth aspect, in the method for manufacturing a semiconductor device according to the eleventh or twelfth aspect, the depth of the groove is at least 5 μm deeper than the thickness of the completed chip. .

According to a fourteenth aspect, in the method of manufacturing a semiconductor device according to any one of the eleventh to thirteenth aspects, the back surface of the wafer is rotated while rotating both the grinding wheel and the wafer. Grinding to the thickness of the chip at the time of completion, the step of separating the wafer into individual chips, while rotating the grinding wheel and the wafer, while pressing the grinding wheel against the wafer, And grinding the back surface of the wafer to the thickness of the completed chip to separate the wafer into individual chips.

According to a fifteenth aspect of the present invention, in the method of manufacturing a semiconductor device according to any one of the eleventh to fourteenth aspects, the adhesive sheet is an adhesive tape or a thermocompression-bonded sheet. Features.

According to a sixteenth aspect of the present invention, in the method of manufacturing a semiconductor device according to any one of the eleventh to fifteenth aspects, the separated chips are peeled from the adhesive sheet to form an envelope. In the sealing step, the chip peeled from the adhesive sheet is mounted on an island of a lead frame, and after the inner lead portion of the lead frame and each pad of the chip are wire-bonded,
It is characterized by being sealed in an envelope.

According to a seventeenth aspect, in the method of manufacturing a semiconductor device according to any one of the eleventh to fifteenth aspects, each of the separated chips is peeled off from the adhesive sheet to form an envelope. The step of sealing includes bonding one end of a lead on the main surface of the chip peeled from the adhesive sheet, wire-bonding the lead and each pad of the chip, and then sealing the package to an envelope. It is characterized by being.

According to an eighteenth aspect of the present invention, in the method of manufacturing a semiconductor device according to any one of the eleventh to fifteenth aspects, the separated chips are peeled from the adhesive sheet to form an envelope. The step of sealing further comprises a step of bonding one end of the lead by interposing an adhesive tape between the main surface of the chip and the lead, wherein the adhesive tape is formed of silicon produced in a grinding step of the back surface of the wafer. It is characterized by being thicker than waste.

According to the wafer dividing method, a groove deeper than the thickness of the completed chip is formed from the element forming surface side of the wafer. Since the wafer is separated into individual chips by grinding and polishing to the thickness of the chip, chipping during dicing can be suppressed.

Further, when the depth of the groove is made at least 5 μm deeper than the thickness of the chip at the time of completion, when the back surface of the wafer is separated into individual chips by grinding and polishing, Even if chipping occurs at the intersection of the cut surface formed by dicing and the polished surface formed by grinding and polishing, this region can be removed by grinding and polishing.

As described in claims 4 and 8, when the wafer is separated into individual chips, the grinding wheel is pressed against the wafer while rotating both the grinding wheel and the wafer. If the back surface is ground to the thickness of the completed chip, the process of separating the wafer into individual chips and the process of grinding and thinning the wafer can be realized in one continuous process.

As described in claim 5, as the holding member, materials such as an adhesive tape, a wax, a suction pad, a thermocompression bonding sheet, a substrate coated with an adhesive, and a resist coated on a semiconductor element are used. Can be used.

As described in claim 7 or 8, by through feed grinding or creep feed grinding,
While separating the wafer into individual chips, the chip thickness can be set to the finished thickness.

According to a ninth aspect of the present invention, when attaching a holding member made of an adhesive sheet to the surface of the wafer on which the semiconductor element is formed, even if an extremely thin film is interposed on the surface of the semiconductor element. good.

As a tenth aspect, a film formed on a surface of a wafer on which semiconductor elements are formed can be used as the extremely thin film.

According to the semiconductor device manufacturing method of the present invention, the step of cutting and separating the semiconductor elements formed on the wafer into individual chips and sealing the chips in an envelope is performed by dicing ( Half cut), wafer backside grinding, and die bonding. That is, the wafer is separated into individual chips by grinding. Accordingly, since there is no transfer or processing step in a state where the back surface of the wafer is ground and thinned, breakage of the wafer can be prevented. Since only one sheet is required, the cost of materials and the number of manufacturing steps can be reduced, and the cost can be reduced. Since it is not necessary to divide the wafer by applying an external force, chipping can be suppressed. In addition, since the back surface of the wafer is removed by cutting and separated into individual chips, chipping that occurs on the back surface of the wafer can be suppressed, and a reduction in bending stress can be suppressed.

As described in claim 13, if the depth of the groove is at least 5 μm deeper than the thickness of the chip at the time of completion, when dicing is performed when the back surface of the wafer is separated into individual chips by grinding and polishing. Even if chipping occurs at the intersection of the formed cut surface and the polished surface formed by grinding and polishing, this region can be removed by grinding and polishing.

As described in claim 14, the wafer can be separated into individual chips by through-feed grinding or creep-feed grinding, and the chip thickness can be set to the thickness at the time of completion.

As described in claim 15, as the adhesive sheet, a tape with an adhesive or a thermocompression bonding sheet can be used.

As described in the sixteenth aspect, when sealing in an envelope, it may be sealed in a normal resin package or a ceramic package, and as described in the seventeenth aspect, LOC (Lead On) (Chip) It may be sealed in a package.

According to the eighteenth aspect, if an adhesive tape thicker than silicon dust generated in the grinding and polishing process of the back surface of the wafer is interposed between the main surface of the chip and the lead, the silicon dust causes Failure can be prevented.

[0045]

Embodiments of the present invention will be described below with reference to the drawings. FIGS. 1 to 6 illustrate a method of dividing a wafer and a method of manufacturing a semiconductor device according to a first embodiment of the present invention. FIG. 1 illustrates a method of forming a groove in a wafer along a dicing line. 2 (a) and 2 (b) are steps of attaching a surface protection tape to the wafer, FIG. 3 is a step of grinding and polishing the back surface of the wafer (division step), and FIG. 4 is a step of picking up separated chips. 5 shows a die bonding step, and FIG. 6 shows a step of sealing in an envelope.

1 to 6, reference numeral 21 denotes a wafer on which various semiconductor elements are formed, 21 'denotes a pattern forming surface (main surface of the wafer 21), 22 denotes a groove formed along a dicing line, and 23 denotes a groove. Dicing chuck table, 24 is a dicing blade, 25 is a flat ring, 26 is a surface protection tape (adhesive sheet) on the pattern forming surface, 27 is a back surface grinding chuck table, 2
8 is a grinding wheel for grinding the back surface, 29 is a chip after cutting and separation, 30
Is a pickup needle, 31 is a lead frame island (bed), 32 is a die bonding adhesive such as a conductive paste, 33 is a resin package or a ceramic package (envelope), 34 is a lead frame, and 35 is a bonding wire. It is.

First, as shown in FIG. 1, a wafer 21 on which various semiconductor elements are formed is suction-fixed to a chuck table 23 of a dicing apparatus by a vacuum or other method with the pattern forming surface side up. Then, the dicing blade 24 is rotated at an arbitrary number of revolutions, and the groove 22 is cut to a predetermined depth while applying cutting water. This groove 2
The depth of 2 should be at least 5 times greater than the thickness of the finished chip.
μm deep. After that, the wafer 21 is cleaned and dried.

Next, a flat ring 25 as shown in FIG. 2A is adhered to the surface protection tape 26 to remove the slack and wrinkles of the tape 26, and then, as shown in FIG. The pattern forming surface 21 ′ of the wafer 21 in which the groove 22 is formed in the process is attached and fixed to the adhesive side of the tape 26.

Thereafter, as shown in FIG. 3, the wafer 21 held by the flat ring 25 and the surface protection tape 26 is suction-fixed to a chuck table 27 of a grinding device by a method such as vacuum. Then, the chuck table 27 and the grinding wheel 28 are rotated to grind the back surface of the wafer 21 while lowering the grinding wheel 28. Generally, this grinding method is called in-feed grinding, but another method, called through-feed grinding or creep-feed grinding, may be used in which the wafer 21 and the grindstone 28 are cut while rotating. When the back surface of the wafer 21 is shaved until it reaches the groove, the wafer 21 becomes an individual chip 29
Is divided into In the present invention, the grinding and polishing are continued even after the wafer 21 is divided into the individual chips 29, and the grinding and polishing are performed for at least 5 μm or more. Thereby, even if chipping occurs at a portion where the surface formed by dicing and the surface formed by grinding and polishing intersect,
This area can be removed by grinding and polishing. If the amount of grinding and polishing is increased, larger chipping can be removed. However, the amount of grinding and polishing may be set as required, such as the thickness of the wafer 21 and the thickness of the chip 29 when completed.

Next, as shown in FIG. 4, the flat ring 25 to which the individual chips 29 divided by cutting and separating the wafer 21 are adhered and fixed is installed in a die bonding apparatus. Using the pickup needle 30, pressure is applied to the pattern forming surface 22 downward through the surface protection tape 26. As a result, the pickup needle 30 presses the pattern forming surface of the chip 29 without penetrating the tape 26, and
Is peeled from the tape 26. The pickup needle 30 has a tip radius of curvature of 0.35 mm or more.
The present inventors have confirmed through experiments that even when a force of 8 N is applied (in the case of a 15 mm × 15 mm chip), no damage occurs to the aluminum wiring and the like formed in the chip 29. Therefore, even if the chip 29 is peeled off from the main surface side of the chip 29 with the pickup needle 30 (metal pin) via the surface protection tape 26, the pickup needle 30 may break the tape 26 by optimizing the radius of curvature of the tip. No problem.

In this embodiment, when the chip 29 is peeled off from the tape 26, the chip 29 is pushed down. However, the chip 29 may be pushed up and peeled off. Is often used.

The chip 29 peeled from the tape 26 is
It is held by suction using a tool called a collet of a die bonding apparatus, and is mounted on an island 31 of a lead frame as shown in FIG. At this time, a conductive paste 32 for bonding and fixing is applied to the island 31 of the lead frame in advance, and the chip 29 is die-bonded thereon. Mounting may be performed using a eutectic of gold-silicon, or a thin metal film may be deposited on the back surface of the wafer and mounted using solder.

After that, the respective pads of the chip 29 are electrically connected to the inner lead portions of the lead frame 34 by bonding wires 35 by performing wire bonding.
Then, the chip 29, the island 31, and the inner lead portion of the lead frame 34 are sealed in a resin package 33 or a ceramic package, and lead forming is performed to complete a semiconductor device as shown in FIG.

FIGS. 7A and 7B are enlarged views of the ground surface when the wafer is separated into individual chips.
(A) shows the case where the conventional dividing method and manufacturing method are used, and is an enlarged view of the ground surface side when dicing by full cut. As shown, a large number of chippings occur in the dicing section. (B) shows a case where the dividing method and the manufacturing method of the present invention are used, and shows a sharper cut surface as compared with (a) in FIG.

FIG. 8 is for explaining a method of manufacturing a semiconductor device according to the second embodiment of the present invention, and is applied to a LOC (Lead On Chip) package. In the case of the LOC package, after the pickup step shown in FIG. 4, sealing is performed in the following steps. First, one end of the lead 37 is bonded onto the chip 29 with an adhesive tape 36 interposed. Thereafter, each pad of the chip 29 and the lead 37 are connected by a bonding wire 35 by performing wire bonding. Then, by encapsulating in a resin package 33 or a ceramic package, a semiconductor device as shown in FIG. 8 is completed.

At this time, if silicon chips are present on the chip 29, the silicon chips will break the protective film on the surface of the chip 29 due to the load at the time of bonding the leads 37 and wire bonding, and defects such as step lines and short circuits of aluminum wiring will occur. Danger. Therefore, by making the thickness of the adhesive tape 36 thicker than the silicon dust, the occurrence of the above-described failure can be suppressed.

According to the above-described wafer dividing method and semiconductor device manufacturing method, the following effects (1) to (6) can be obtained.

(1) The defect rate due to wafer breakage when the wafer is thinned can be reduced.

Table 1 below shows the chip thickness (substantially equal to or slightly smaller than the groove depth) and the breakage rate (ppm :) when a wafer having a diameter of 6 inches is divided into individual chips.
(parts par million).

[0060]

[Table 1]

As shown in Table 1, in the past, the breakage rate increased as the chip thickness decreased, but in the present invention, the breakage rate decreases as the final chip thickness decreases. This is because when making the chip thickness thinner, the groove can be made shallower,
This is because the thickness of the wafer remaining under the groove is increased. For a 6 inch diameter wafer, the thickness of the wafer is typically 600-650 μm. In the conventional dividing method and manufacturing method, for example, in order to form a chip having a thickness of 100 μm, the wafer is ground and polished to a thickness of 100 μm in advance, and the processing shown in FIGS. 17 to 19 is performed. In contrast, in the method of the present invention, 100 μm
After forming the groove of m (the 500-550 μm wafer remains under the groove), the chip is ground and polished to be divided into individual chips, so that the breakage rate is reduced.

(2) Trouble during transport does not depend on the diameter of the wafer. Adhesive sheet 26 is affixed to flat ring 25 and is used for holding. Therefore, even if the chip thickness becomes thin or the same diameter, it is transported in the apparatus without being affected by wafer warpage due to cutting distortion. Is possible. In addition, as the chip thickness becomes smaller, the wafer remaining under the groove becomes thicker, and from this point, it is also possible to reduce damage to the wafer during transport. As a result, the effects shown in Table 2 below can be obtained. However, this is a case where the diameter of the wafer is 8 inches and the thickness of the chip is finished to 100 μm.

[0063]

[Table 2]

As is clear from the data in Table 2, the present invention is effective for increasing the diameter of a wafer, and it is easy to deal with a 12-inch or 16-inch wafer to be developed in the future.

(3) Since only one surface protection tape is used, the material cost and the processing cost can be reduced by about 60% as compared with the conventional method, and the manufacturing cost can be reduced.

(4) In the case of the full cut method, since the cutting is performed up to the sheet, the sharpness of the blade is reduced and chips are scattered during dicing.
mm / sec, but 200 mm in the method of the present invention.
/ Sec. As a result, the dicing speed can be improved, and the processing cost can be reduced by about 10%.

(5) In order to divide the wafer, it is not necessary to cut into the dicing sheet, and the wafer is divided by grinding with a grindstone for backside grinding, so that the size of the backside chipping is reduced from about 15 μm in the past to about 4 μm. Smaller,
The flexural strength, which was 520 MPa in the conventional method, is improved to 600 MPa.

FIG. 9 shows a comparison of the bending strength distribution between the conventional method and the method of the present invention.
The chipping occurrence probability (%) in the range of 00 MPa to 1000 MPa is shown. As is apparent from FIG. 9, in the separation method of the present invention, if the bending strength is the same as in the conventional separation method, the probability of occurrence of chipping is reduced, and the bending strength is shifted to the higher bending strength side. . The average value of the bending strength by the conventional method is about 520 MPa, and the average value of the bending strength by the method of the present invention is about 600 MPa.

(6) Since it is not necessary to cut the dicing sheet to divide the wafer, the wear of the dicing blade can be reduced and the life of the dicing blade can be improved. For example, in the case of employing the method of cutting up to the dicing sheet, the life is usually 10,000 to 20,000 lines (in the case of a 6-inch wafer). However, the method of the present invention can be expected to extend the life to 80,000 lines or more.

FIGS. 10A to 10E are views for explaining a method of manufacturing a semiconductor device according to the third embodiment of the present invention, in which a divided chip is mounted on a lead frame. Are sequentially shown. First,
As in the first embodiment, the wafer 21 is divided into individual chips 29 according to the steps shown in FIGS. Next, the flat ring 25 to which the divided individual chips 29 are adhered and fixed is removed from the chuck table 27 of the grinding device, and the chips 29 are picked up as shown in FIG. At this time, the chip 29 is pushed up from below by a pickup needle and peeled off from the surface protection tape 26, and the back surface is sucked by the collet 38. This collet 38 has a tip reversing mechanism.
As shown in FIG. 2B, the rotation is made 180 ° so that the downward suction portion faces upward. In this state, the collet 39 is switched to another collet 39 as shown in FIG. As a result, the front and back of the chip 29 are inverted, and the main surface (pattern forming surface) faces upward. Thereafter, a conductive paste 41 is applied to the island 31 of the lead frame 34 using a dispenser 40 as shown in FIG. 10D, and the chip 29 held by the collet 39 as shown in FIG. Is moved onto the island 31 of the lead frame 34 for die bonding.

FIGS. 11A to 11C are views for explaining a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention, in which a divided chip is mounted on a lead frame. Are sequentially shown. First,
As in the first embodiment, the wafer 21 is divided into individual chips 29 according to the steps shown in FIGS. Next, the flat ring 25 to which the divided individual chips 29 are adhered and fixed is removed from the chuck table 27 of the grinding device, and each chip 29 is attached to the surface protection tape 42 as shown in FIG. To the surface of the tape to which is attached. Thereby, the front and back of the chip 29 are inverted, and the main surface is directed upward. next,
As shown in FIG. 11B, the conductive paste 4 is applied to the island 31 of the lead frame 34 by using a dispenser 40.
1 is applied. Thereafter, as shown in FIG. 11C, a pickup similar to the conventional one using a pickup needle,
That is, by applying pressure to the pattern forming surface from below through the surface protection tape 42, the pattern formation surface of the chip 29 is pressed, and the chip 29 is attached to the surface protection tape 42.
Peel from Then, the chip 29 picked up by the collet 44 is moved onto the island 31 of the lead frame 34 on which the conductive paste 41 has been applied, and die-bonded.

FIGS. 12 (a) to 12 (c) are for explaining a method of manufacturing a semiconductor device according to a fifth embodiment of the present invention, and are steps for mounting a divided chip on a lead frame. Are sequentially shown. First,
As in the first embodiment, the wafer 21 is divided into individual chips 29 according to the steps shown in FIGS. Next, the flat ring 25 to which the divided individual chips 29 are adhered and fixed is removed from the chuck table 27 of the grinding device, and each chip 29 is transferred to the porous chuck table 45. Thereby, the chip 29
Is turned upside down and the main surface is directed upward. Next, FIG.
As shown in (b), a conductive paste 41 is applied to the island 31 of the lead frame 34 using a dispenser 40. Thereafter, as shown in FIG.
From the porous chuck table 45. Then, the chip 29 picked up is moved onto the island 31 of the lead frame 34 and die-bonded.

Therefore, in the fifth embodiment, the chip 29 can be picked up without using a push-up pin.

FIGS. 13A to 13E illustrate a method of manufacturing a semiconductor device according to a sixth embodiment of the present invention, in which a divided chip is mounted on a lead frame. Are sequentially shown. First,
As in the first embodiment, the wafer 21 is divided into individual chips 29 according to the steps shown in FIGS. Next, the flat ring 25 to which the divided individual chips 29 are adhered and fixed is removed from the chuck table 27 of the grinding device, and each chip 29 is picked up using a collet 38 as shown in FIG. . The pickup is performed by pushing up the chip 29 from below with a pickup needle, peeling off the chip from the surface protection tape 26, and adsorbing it with a collet 38. The collet 38 has a tip reversing mechanism, and rotates 180 ° so that the downward suction portion is directed upward as shown in FIG. In this state, the collet 39 is changed to another collet 39 by using the tip air transfer mechanism. Next, the collet 39 is moved, and each chip 29 is replaced with a tape surface having a flat ring 47 attached to a surface protection tape 46 as shown in FIG. As a result, the front and back of each chip 29 are inverted, and the main surface (pattern forming surface) faces upward. Next, as shown in FIG. 13D, the conductive paste 4 is applied to the island 31 of the lead frame 34 by using a dispenser 40.
1 is applied. Thereafter, as shown in FIG. 13E, a pickup similar to the conventional one using a pickup needle,
That is, by applying pressure to the chip back surface through the surface protection tape, the chip back surface is pressed, and the chip 29 is peeled from the surface protection tape. And the above collet 3
9 and the chip 29 held by the lead frame 34
And die bonding is performed.

According to the mounting method described above, each chip 29 can be easily transported to a distant manufacturing apparatus, another room, another factory, or the like while being attached to the surface protection tape 46 of the flat ring 47. It can flexibly respond to equipment and manufacturing methods.

FIGS. 14A to 14E are views for explaining a method of manufacturing a semiconductor device according to the seventh embodiment of the present invention, in which a divided chip is mounted on a lead frame. Are sequentially shown. First,
As in the first embodiment, the wafer 21 is divided into individual chips 29 according to the steps shown in FIGS. Next, the flat ring 25 to which the divided individual chips 29 are bonded and fixed is removed from the chuck table 27 of the grinding device, and the chips 29 are picked up as shown in FIG. At this time, the chip 29 is pushed up from below by a pickup needle, peeled off from the surface protection tape 26, and sucked by a collet 38. This collet 38 has a chip reversing mechanism, and as shown in FIG. 14B, the suction unit rotates 180 ° from downward to upward. In this state, the collet 39 is changed to another collet 39 by using the tip air transfer mechanism. Next, as shown in FIG. 14C, each chip 29 is stored in a chip tray 48.
The main surface (pattern forming surface) of the chip 29 is accommodated in the chip tray 48 in an upward direction. Next, as shown in FIG.
The conductive paste 41 is applied to the island 31 of FIG. Thereafter, as shown in FIG. 14E, each chip 29 is sucked from the chip tray 48 by the collet 39, and
The chip 29 held at 9 is moved onto the island 31 of the lead frame 34 and die-bonded.

In the mounting method described above, similarly to the sixth embodiment, the chips 29 are easily accommodated in the chip tray 48 and can be easily mounted in a separate manufacturing apparatus, another room, another factory, or the like. It can be transported and can flexibly cope with various manufacturing devices and manufacturing methods.

FIGS. 15A to 15D are views for explaining a method of manufacturing a semiconductor device according to the eighth embodiment of the present invention, in which a divided chip is mounted on a lead frame. Are sequentially shown. First,
As in the first embodiment, the wafer 21 is divided into individual chips 29 according to the steps shown in FIGS. Next, the flat ring 25 to which the divided individual chips 29 are adhered and fixed is removed from the chuck table 27 of the grinding device, and the chips 29 are picked up as shown in FIG. Pickup is chip 2
9 is lifted up from below by a pick-up needle, peeled off from the surface protection tape 26, and sucked by a collet 38. In this state, as shown in FIG.
Is transported and placed on the processing stage 49. Next, FIG.
As shown in FIG. 5C, the conductive paste 41 is applied to the island 31 of the lead frame 34 by using the dispenser 40.
Is applied. At this time, the chip mounting surface of the lead frame 34 faces downward, and the conductive paste 41 is applied to the lower surface side of the lead frame 34 by the dispenser 40 from below.
Then, as shown in FIG.
The die 29 mounted on the chip 9 is die-bonded to the lead frame 34.

In such a mounting method, the chip 29
Since there is no need to turn the front and back of the collet 38, the collet 38 does not require a tip turning mechanism, and the structure can be simplified. Further, there is no need to replace the picked-up chip with another surface protection tape or transfer the chip to a chip tray.

FIGS. 16A and 16B are views for explaining a method of manufacturing a semiconductor device according to the ninth embodiment of the present invention, in which a divided chip is mounted on a lead frame. Are sequentially shown. First,
As in the first embodiment, the wafer 21 is divided into individual chips 29 according to the steps shown in FIGS. Next, the flat ring 25 to which the divided individual chips 29 are adhered and fixed is removed from the chuck table 27 of the grinding device, and a conductive paste 41 is applied to the back surface of each chip 29 as shown in FIG. I do. Then, as shown in FIG.
The lead frame 34 is disposed on the upper surface, and the chip 29 is pushed up from below with a pickup needle to thereby obtain the surface protection tape 2.
6 and die-bonded to the island 31 of the lead frame 34.

The present invention is not limited to the first to ninth embodiments.
The present invention is not limited to the embodiment described above, and can be variously modified and implemented without departing from the gist. For example, the first
In the embodiment, the wafer 21 is fixed to the dicing chuck table 23 at the time of forming the groove, but the wafer is fixed to the dicing chuck table in a state where the flat ring is stuck to the adhesive sheet as in the conventional method. You may do it. Alternatively, the groove may be formed while the wafer is fixed to a flat plate or the wafer is fixed to the flat plate using an adhesive sheet.

Further, in the grinding and polishing steps shown in FIG. 3, a case where a ring frame is used has been described as an example. However, a wafer having a groove formed only by a holding member without using a ring frame is used for grinding and polishing. Polishing is also possible. As the holding member, a tape with an adhesive, wax, a suction pad, a thermocompression-bonding sheet, a substrate coated with an adhesive, a resist coated on a semiconductor element, or a material combining these can be used.

Further, the pattern forming surface 2 of the wafer 21
1 ′ was attached to an adhesive sheet (surface protection tape 26).
An extremely thin film may be interposed between 1 'and the adhesive sheet. In order to interpose an ultra-thin film, for example, a liquid called Sirict-II is sprayed on the pattern forming surface of the wafer by spraying to form a coating, and then an adhesive sheet may be attached. A double-sided or single-sided adhesive tape may be attached to a flat plate, and the wafer may be fixed thereon.

Further, although the pickup needle is used to peel the chip from the surface protection tape, the back surface of the chip may be sucked by vacuum and peeled off from the surface protection tape instead of the pickup needle.

[0085]

As described above, according to the present invention, it is possible to obtain a method of dividing a wafer and a method of manufacturing a semiconductor device capable of suppressing cracking of a wafer during thin grinding or transport. Further, a method for dividing a wafer and a method for manufacturing a semiconductor device, which can reduce the number of manufacturing steps and costs, can be obtained. Furthermore,
It is possible to obtain a method of dividing a wafer and a method of manufacturing a semiconductor device, which can reduce chipping on the back surface side of a wafer and can suppress a decrease in die bending stress of a chip. Further, effects such as reduction of the amount of wear of the dicing blade and improvement of the life of the dicing blade can be obtained.

[Brief description of the drawings]

FIG. 1 is a view for explaining a method for manufacturing a semiconductor device according to a first embodiment of the present invention, showing a step of forming a groove in a wafer along a dicing line.

FIG. 2 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, showing a step of attaching a surface protection tape to the wafer.

FIG. 3 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, showing a grinding and polishing step (division step) of the back surface of the wafer.

FIG. 4 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention and showing a step of picking up a separated chip.

FIG. 5 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention and showing a die bonding step.

FIG. 6 is a view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, showing a step of sealing the package in an envelope.

FIG. 7 is an enlarged view of a ground surface when a wafer is separated into individual chips by the conventional method and the method of the present invention.

FIG. 8 is a cross-sectional view of the semiconductor device when the present invention is applied to a LOC package, for describing a method of manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 9 is a graph showing a comparison between a conventional method and a bending strength distribution according to the method of the present invention.

FIG. 10 is a view for explaining the method for manufacturing the semiconductor device according to the third embodiment of the present invention, and is a view sequentially showing steps of mounting the divided chips on a lead frame.

FIG. 11 is a view for explaining the method for manufacturing the semiconductor device according to the fourth embodiment of the present invention and is a view sequentially showing steps of mounting the divided chips on a lead frame.

FIG. 12 is a view for explaining the method for manufacturing the semiconductor device according to the fifth embodiment of the present invention, and is a view sequentially showing steps of mounting the divided chips on a lead frame.

FIG. 13 is a view for explaining the method for manufacturing the semiconductor device according to the sixth embodiment of the present invention, and sequentially showing steps of mounting the divided chips on a lead frame.

FIG. 14 is a view for explaining the method for manufacturing the semiconductor device according to the seventh embodiment of the present invention, and is a view sequentially showing steps of mounting the divided chips on a lead frame.

FIG. 15 is a view for explaining the method for manufacturing the semiconductor device according to the eighth embodiment of the present invention, and is a view sequentially showing steps of mounting the divided chips on a lead frame.

FIG. 16 is a view for explaining the method for manufacturing the semiconductor device according to the ninth embodiment of the present invention, and is a view sequentially showing steps for mounting the divided chips on a lead frame.

FIG. 17 is a view for explaining a conventional method of manufacturing a semiconductor device, and showing a step of attaching a surface protection tape of a wafer.

FIG. 18 is a view for explaining a conventional method of manufacturing a semiconductor device, showing a grinding and polishing step of the back surface of the wafer.

FIG. 19 is a view for explaining a conventional method for manufacturing a semiconductor device and showing a step of peeling off a surface protection tape.

FIG. 20 is a view for explaining a conventional method for manufacturing a semiconductor device, and showing a step of fixing a wafer to a fixing sheet.

FIG. 21 is a view for explaining a conventional method of manufacturing a semiconductor device and showing a wafer dicing step.

FIG. 22 is a view for explaining a conventional method for manufacturing a semiconductor device and showing a step of picking up separated chips.

FIG. 23 is a view illustrating a conventional semiconductor device manufacturing method, showing a die bonding step.

[Explanation of symbols]

21: wafer, 21 ': pattern forming surface, 22: groove,
23: Dicing chuck table, 24: Dicing blade, 25: Flat ring, 26: Surface protection tape (adhesive sheet), 27: Backside grinding chuck table, 28: Backside grinding wheel, 29: Chip, 30
... Pickup needle, 31 ... Island, 32 ... Die bonding adhesive, 33 ... Resin package or ceramic package (envelope), 34 ... Lead frame, 35 ... Bonding wire, 36 ... Adhesive tape, 3
7 ... Lead, 38, 39 ... Collet, 40 ... Dispenser, 41 ... Conductive paste, 44 ... Collet, 45 ... Porous chuck table, 46 ... Surface protection tape, 47
... flat ring, 48 ... chip tray, 49 ... processing stage.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Keisuke Tokubuchi 1 Komatsu Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Prefecture Inside the Toshiba Tamagawa Plant Co., Ltd. No. 1 Inside the Toshiba Tamagawa Plant

Claims (18)

[Claims] A step of forming a groove deeper than a completed chip from a surface on which the semiconductor element is formed, along a dicing line of the wafer on which the semiconductor element is formed; and forming a semiconductor element on the wafer. Attaching the holding member on the surface, while rotating both the grinding wheel and the wafer,
Grinding the back surface of the wafer to the thickness of the completed chip and separating the wafer into individual chips. 2. A step of forming a groove deeper than a completed chip from a surface on which the semiconductor element is formed, along a dicing line of the wafer on which the semiconductor element is formed, and forming a semiconductor element on the wafer. Attaching the holding member on the surface, while rotating both the grinding wheel and the wafer,
Grinding the back surface of the wafer to the thickness of the completed chip, and separating the wafer into individual chips, wherein the thickness of the completed chip is 290 μm or less. How to split. 3. The wafer dividing method according to claim 1, wherein the depth of the groove is at least 5 μm deeper than the thickness of the completed chip. 4. The step of grinding the back surface of the wafer to the thickness of the completed chip while rotating both the grinding wheel and the wafer, and separating the wafer into individual chips, While rotating both the grinding wheel and the wafer while the grinding wheel is pressed against the wafer, the back surface of the wafer is ground to the thickness of the completed chip, and the wafer is separated into individual chips. The method according to any one of claims 1 to 3, wherein: 5. The holding member is at least one material selected from wax, a suction pad, a thermocompression bonding sheet, a substrate coated with an adhesive, and a resist coated on the semiconductor element. The method of dividing a wafer according to claim 1, wherein: 6. A step of forming a groove deeper than the thickness of a completed chip from a side on which the semiconductor element is formed, along a dicing line of the wafer on which the semiconductor element is formed; and forming a semiconductor element on the wafer. Attaching a holding member made of an adhesive sheet on the surface, grinding the back surface of the wafer to the thickness of the completed chip, and separating the wafer into individual chips. Method of dividing wafers. 7. The step of grinding the back surface of the wafer to the thickness of the completed chip and separating the wafer into individual chips comprises rotating both the grinding wheel and the wafer while rotating the back surface of the wafer. 7. The method according to claim 6, wherein the wafer is ground to the thickness of the chip at the time of completion, and the wafer is separated into individual chips. 8. The step of grinding the back surface of the wafer to the thickness of the completed chip while rotating both the grinding wheel and the wafer, and separating the wafer into individual chips, While rotating both the grinding wheel and the wafer while the grinding wheel is pressed against the wafer, the back surface of the wafer is ground to the thickness of the completed chip, and the wafer is separated into individual chips. The method of dividing a wafer according to claim 7, wherein: 9. A step of attaching a holding member made of an adhesive sheet on a surface of the wafer on which the semiconductor elements are formed, wherein
9. The wafer dividing method according to claim 6, wherein a holding member made of an adhesive sheet is attached in a state where an extremely thin film is interposed. 10. The method according to claim 9, wherein the ultra-thin film is a film formed on a surface of the wafer on which semiconductor elements are formed. 11. A step of forming a semiconductor element on a main surface of a wafer, a step of forming a groove deeper than a thickness of a completed chip from a main surface side of the wafer along a dicing line, and a step of forming a semiconductor in the wafer. A step of attaching a holding member made of an adhesive sheet on the surface on which the element is formed, and while rotating both the grinding wheel and the wafer,
Grinding the back surface of the wafer to the thickness of the completed chip and separating the wafer into individual chips; andseparating each separated chip from the adhesive sheet and sealing it in an envelope. A method for manufacturing a semiconductor device, comprising: 12. A step of forming a semiconductor element on a main surface of a wafer, and a groove extending along a dicing line of the wafer on which the semiconductor element is formed from a side on which the semiconductor element is formed, the groove being deeper than a thickness of a completed chip. And a step of attaching a holding member made of an adhesive sheet on the surface of the wafer on which the semiconductor elements are to be formed, while rotating both the grinding wheel and the wafer,
Grinding the back surface of the wafer to the thickness of the completed chip and separating the wafer into individual chips; andseparating each separated chip from the adhesive sheet and sealing it in an envelope. Wherein the thickness of the completed chip is 290 μm or less. 13. The method according to claim 11, wherein a depth of the groove is at least 5 μm deeper than a thickness of the completed chip. 14. A step of grinding the back surface of the wafer to the thickness of the completed chip while rotating both the grinding wheel and the wafer, and separating the wafer into individual chips, While rotating both the grinding wheel and the wafer while the grinding wheel is pressed against the wafer, the back surface of the wafer is ground to the thickness of the completed chip, and the wafer is separated into individual chips. 14. The method of manufacturing a semiconductor device according to claim 11, wherein: 15. The method according to claim 11, wherein the adhesive sheet is a tape with an adhesive or a thermocompression-bonded sheet. 16. The step of peeling each separated chip from the adhesive sheet and sealing the chip in an envelope includes mounting the chip peeled from the adhesive sheet on an island of a lead frame. 16. The semiconductor device according to claim 11, wherein the inner lead portion of the frame and each pad of the chip are wire-bonded and then sealed in an envelope. Method. 17. The step of peeling each separated chip from the adhesive sheet and sealing the chip in an envelope includes bonding one end of a lead on a main surface of the chip peeled from the adhesive sheet. 16. The method of manufacturing a semiconductor device according to claim 11, wherein the lead is wire-bonded to each pad of the chip and then sealed in an envelope. 18. A step of peeling each separated chip from the adhesive sheet and sealing the chip in an envelope, wherein an adhesive tape is interposed between a main surface of the chip and the lead, and one end of the lead is provided. 16. The method of manufacturing a semiconductor device according to claim 11, further comprising a step of bonding the adhesive tape, wherein the adhesive tape is thicker than silicon dust generated in a grinding step of a back surface of the wafer. Method.