JPH02239200A - 単結晶モリブデンの拡散接合方法 - Google Patents
単結晶モリブデンの拡散接合方法Info
- Publication number
- JPH02239200A JPH02239200A JP5611289A JP5611289A JPH02239200A JP H02239200 A JPH02239200 A JP H02239200A JP 5611289 A JP5611289 A JP 5611289A JP 5611289 A JP5611289 A JP 5611289A JP H02239200 A JPH02239200 A JP H02239200A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- molybdenum
- crystal
- joint
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 27
- 229910052750 molybdenum Inorganic materials 0.000 title claims description 26
- 239000011733 molybdenum Substances 0.000 title claims description 26
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims description 25
- 238000009792 diffusion process Methods 0.000 title claims description 22
- 238000005304 joining Methods 0.000 title description 4
- 239000000463 material Substances 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000001953 recrystallisation Methods 0.000 description 9
- 238000005219 brazing Methods 0.000 description 8
- 239000010953 base metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 230000004927 fusion Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002335 surface treatment layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5611289A JPH02239200A (ja) | 1989-03-10 | 1989-03-10 | 単結晶モリブデンの拡散接合方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5611289A JPH02239200A (ja) | 1989-03-10 | 1989-03-10 | 単結晶モリブデンの拡散接合方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02239200A true JPH02239200A (ja) | 1990-09-21 |
| JPH0579639B2 JPH0579639B2 (enrdf_load_stackoverflow) | 1993-11-04 |
Family
ID=13018004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5611289A Granted JPH02239200A (ja) | 1989-03-10 | 1989-03-10 | 単結晶モリブデンの拡散接合方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02239200A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007294579A (ja) * | 2006-04-24 | 2007-11-08 | Showa Denko Kk | ＧａＮ系半導体発光素子の製造方法及びＧａＮ系半導体発光素子、並びにランプ |
| CN111270314A (zh) * | 2020-04-17 | 2020-06-12 | 中国电子科技南湖研究院 | 一种制备大尺寸单晶的方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6047336A (ja) * | 1983-08-26 | 1985-03-14 | Hitachi Ltd | 電子銃用円筒部品の製造方法 |
-
1989
- 1989-03-10 JP JP5611289A patent/JPH02239200A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6047336A (ja) * | 1983-08-26 | 1985-03-14 | Hitachi Ltd | 電子銃用円筒部品の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007294579A (ja) * | 2006-04-24 | 2007-11-08 | Showa Denko Kk | ＧａＮ系半導体発光素子の製造方法及びＧａＮ系半導体発光素子、並びにランプ |
| CN111270314A (zh) * | 2020-04-17 | 2020-06-12 | 中国电子科技南湖研究院 | 一种制备大尺寸单晶的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0579639B2 (enrdf_load_stackoverflow) | 1993-11-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |