JPH02234457A - Semiconductor device package having radiating element - Google Patents
Semiconductor device package having radiating elementInfo
- Publication number
- JPH02234457A JPH02234457A JP5580089A JP5580089A JPH02234457A JP H02234457 A JPH02234457 A JP H02234457A JP 5580089 A JP5580089 A JP 5580089A JP 5580089 A JP5580089 A JP 5580089A JP H02234457 A JPH02234457 A JP H02234457A
- Authority
- JP
- Japan
- Prior art keywords
- eyelet
- heat sink
- radiating element
- terminal holes
- terminal hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 239000011521 glass Substances 0.000 claims abstract description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は放熱体を有する半導体装置用パッケージに関す
る．
（従来の技術および解決しようとする課題）半導体レー
ザ装置用パッケージなどでは、半導体レーザ素子から発
生する熱を放散させるため，放熱体上に半導体レーザ素
子を接合して搭載するようにしている．
第６図および第７図は半導体レーザ装置用パッケージの
従来例を示す平面図である．図で１０はアイレット，１
２はアイレット上に形成した放熱体、１４は端子穴で、
端子穴１４にはリード１６が気密にガラス溶看される．
放熱体１２の前壁面上には半導体レーザ素子２０が接合
される．ここで，端子穴１４のアイレット１０上におけ
る配置位置は規格によって決められており、半導体レー
ザ装置用パッケージではアイレット１０の中心線上に配
置される．このため、放熱体の配置位置およびサイズは
端子穴１４の配置による制約が生じてくる．
第６図は端子穴１４間に四角形状の放熱体を形成した例
、第７図は放熱体１２を扇形状に形成した例である．第
７図の放熱体１２は放熱体を扇形状にして熱放散性を高
゛めることを図っている．いずれの例でも、放熱体１２
が端子穴１４の近傍にきたり端子穴１４のガラス上にあ
ると，放熱体１２を接合するろう材が端子穴１４に流れ
込んだりして絶縁性や気密性を低下させるおそれがある
ため，放熱体１２は端子穴１４より離れた位置に形成し
ている．
このように、従来は、アイレット１０の径サイズおよび
端子穴１４などの配置位置に制約されて、大きな放熱体
を形成することができなかった．最近は高パワーの半導
体素子も多く使用されるようになっており、これに対処
するため、放熱体の熱放散性の向上が求められている．
そこで，本発明は上記問題点に鑑みてなされたものであ
り、その目的とするところは、アイレットのサイズおよ
び端子穴の配置位置等に所定の規格条件がある場合でも
，より大きな放熱体を形成することができる半導体装置
用パッケージを提供しようとするものである．
（課題を解決するための手段）
本発明は上記目的を達成するため次の構成をそなえる．
すなわち、アイレットにリード線がガラスにより植立さ
れ、該アイレット上面に放熱体が接合されて成る放熱体
を有する半導体装置用パッケージにおいて，前記放熱体
は、前記ガラスにより封止される端子穴より離して設け
た接合突起により、アイレットの上面とは離間してアイ
レット上に接合されると共に，放熱体前端部が端子穴上
方に張り出していることを特徴とする．
（作用）
接合突起を介することにより、放熱体の前端部を端子穴
の上方まで張り出して接合でき、これによって，端子穴
による制約が回避され、放熱体のサイズを大きくするこ
とが可能となる．（実施例）
以下本発明の好適な実施例を添付図面に基づいて詳細に
説明する．
第１図は、本発明に係る放熱体を有する半導体装置用パ
ッケージの例として、半導体レーザ装置用パッケージの
一実施例を示す正面図である．１０はアイレット、１６
はアイレット１０にガラス溶看により気密に封止された
リードで、１７はアースリードである．１０ａはアイレ
ットｌＯの上面に突出させて設けた接合突起で、端子穴
位置に掛からない位置に形成されている．放熱体２２は
この接合突起１０ａの上面に固設される．これにより，
放熱体２２はアイレット１０上面から若干離間する．
第２図は上記半導体レーザ装置用パッケージの平面図を
示す．ここで、放熱体２２は両端子穴１４の上方に放熱
体が張り出すようにして配置される．放熱体２２の端子
穴１４上方の張り出し部分は、ガラス溶着部とは離間し
ている．放熱体２２の前壁面はリード１６に接しないよ
うに離して配置する．
このように，端子穴１４の上方にかけて放熱体２２を張
り出すように配置すると，放熱体２２のサイズをきわめ
て大きくすることができる．半導体レーザ装置用パッケ
ージは本来，非常に小型であるから、このように端子穴
１４上方まで放熱体を張り出させて放熱体のサイズを大
きくできることによる放熱性の向上等の効果は非常に顕
著である．
第３図は上記放熱体２２を接合する前のパッケージの正
面図である．アイレット１０成形時に、あらかじめアイ
レット１０上面に放熱体２２を接合するための接合突起
１０ａを設けてある．なお、放熱体２２をアイレット１
０の上面から離して固設する方法としては、上記のよう
にアイレット１０上に接合突起１０ａを設けるかわりに
、放熱体２２の下面に接合突起を設けるようにしてもよ
い．第４図は接合突起２４ａを放熱体の下面に形成した
放熱体２４の例で、この場合は、接合突起２４ａをアイ
レット１０上面に接合することによって，放熱体２４の
前端部を端子穴の上方に張り出して接合することができ
る．
また，アイレット上面または放熱体下面には接合突起を
設けずに、アイレット上面と放熱体の下面間にスペーサ
を挿入して接合突起とし、アイレット上面と放熱体下面
との間を離間させ，端子穴の上方まで放熱体を張り出し
て接合させてもよい．以上のように，放熱体をアイレッ
ト上面からうかせて接合することにより，放熱体の前端
部を端子穴上方まで張り出して配置することが可能とな
った．そして，上記のように接合突起により、放熱体を
接合する際の端子穴位置による制約を回避することがで
き、従来と同一サイズのアイレットであっても格段に大
型の放熱体を形成することが可能になる．この結果，放
熱体上により大型の半導体素子を搭載することが可能に
なり、また、放熱性が大きく向上することによって、よ
り高パワーの半導体素子を搭栽することが可能になる。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a package for a semiconductor device having a heat sink. (Conventional technology and problems to be solved) In packages for semiconductor laser devices, the semiconductor laser device is bonded and mounted on a heat sink in order to dissipate the heat generated from the semiconductor laser device. 6 and 7 are plan views showing conventional examples of packages for semiconductor laser devices. In the figure, 10 is an eyelet, 1
2 is a heat sink formed on the eyelet, 14 is a terminal hole,
A lead 16 is hermetically sealed with glass in the terminal hole 14.
A semiconductor laser element 20 is bonded onto the front wall surface of the heat sink 12. Here, the arrangement position of the terminal hole 14 on the eyelet 10 is determined by the standard, and is arranged on the center line of the eyelet 10 in a package for a semiconductor laser device. Therefore, the placement position and size of the heat sink are restricted by the placement of the terminal holes 14. FIG. 6 shows an example in which a rectangular heat sink is formed between the terminal holes 14, and FIG. 7 shows an example in which the heat sink 12 is formed in a fan shape. The heat radiator 12 shown in FIG. 7 is designed to have a fan shape to improve heat dissipation. In either example, the heat sink 12
If it is near the terminal hole 14 or on the glass of the terminal hole 14, the brazing material used to bond the heat sink 12 may flow into the terminal hole 14, reducing insulation and airtightness. 12 is formed at a position away from the terminal hole 14. As described above, conventionally, it has been impossible to form a large heat sink due to restrictions on the diameter size of the eyelet 10 and the placement position of the terminal holes 14, etc. Recently, many high-power semiconductor devices are being used, and in order to cope with this, there is a need for improved heat dissipation properties of heat sinks. Therefore, the present invention has been made in view of the above problems, and its purpose is to form a larger heat sink even if there are predetermined standard conditions such as the size of the eyelet and the arrangement position of the terminal hole. The aim is to provide a package for semiconductor devices that can (Means for Solving the Problems) In order to achieve the above object, the present invention has the following configuration. That is, in a package for a semiconductor device having a heat radiator in which a lead wire is embedded in an eyelet using glass and a heat radiator is bonded to the upper surface of the eyelet, the heat radiator is spaced apart from the terminal hole sealed by the glass. It is characterized in that it is joined to the eyelet at a distance from the upper surface of the eyelet by a joining protrusion provided on the terminal hole, and that the front end of the heat sink protrudes above the terminal hole. (Function) By using the joining protrusion, the front end of the heat sink can be joined to extend above the terminal hole, thereby avoiding the restrictions imposed by the terminal hole and making it possible to increase the size of the heat sink. (Embodiments) Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 is a front view showing an embodiment of a package for a semiconductor laser device as an example of a package for a semiconductor device having a heat sink according to the present invention. 10 is an eyelet, 16
is a lead hermetically sealed in eyelet 10 by glass melting, and 17 is a ground lead. Reference numeral 10a denotes a joining protrusion protruding from the upper surface of the eyelet IO, and is formed at a position that does not overlap the terminal hole position. The heat sink 22 is fixedly installed on the upper surface of this joining protrusion 10a. As a result,
The heat sink 22 is slightly spaced apart from the top surface of the eyelet 10. Figure 2 shows a plan view of the package for the semiconductor laser device mentioned above. Here, the heat radiator 22 is arranged so that the heat radiator protrudes above both terminal holes 14. The projecting portion of the heat sink 22 above the terminal hole 14 is spaced apart from the glass welding portion. The front wall surface of the heat sink 22 is placed away from the leads 16 so as not to touch them. By arranging the heat sink 22 so as to protrude above the terminal hole 14 in this manner, the size of the heat sink 22 can be made extremely large. Since the semiconductor laser device package is originally very small, the effect of improving heat dissipation by increasing the size of the heat dissipation body by extending the heat dissipation body above the terminal hole 14 in this way is very remarkable. be. FIG. 3 is a front view of the package before the heat sink 22 is joined. At the time of molding the eyelet 10, a joining protrusion 10a for joining the heat sink 22 is provided in advance on the upper surface of the eyelet 10. Note that the heat sink 22 is connected to the eyelet 1.
As a method for fixing it away from the upper surface of the heat sink 22, instead of providing the bonding protrusion 10a on the eyelet 10 as described above, a bonding protrusion may be provided on the lower surface of the heat sink 22. FIG. 4 shows an example of a heat sink 24 in which a joining protrusion 24a is formed on the lower surface of the heat sink. In this case, by joining the joining projection 24a to the upper surface of the eyelet 10, the front end of the heat sink 24 is positioned above the terminal hole. It can be joined by overhanging it. In addition, instead of providing a joint protrusion on the top surface of the eyelet or the bottom surface of the heat sink, a spacer is inserted between the top surface of the eyelet and the bottom surface of the heat sink to form a joint protrusion, and the top surface of the eyelet and the bottom surface of the heat sink are spaced apart. It is also possible to extend the heat dissipation body above it and connect it. As described above, by joining the heat sink so that it extends from the top of the eyelet, it is now possible to place the heat sink so that the front end of the heat sink extends above the terminal hole. As mentioned above, the joining protrusion makes it possible to avoid restrictions due to the terminal hole position when joining the heat sink, and it is possible to form a much larger heat sink even with the same eyelet size as before. It becomes possible. As a result, it becomes possible to mount a larger semiconductor element on the heat sink, and the heat dissipation performance is greatly improved, making it possible to mount a higher power semiconductor element.
また、放熱体のサイズが人形になることによって、放熱
体上に単体で半導体素子を搭載する他、第５図に示すよ
うに，放熱体２２上に回路基板２６、２８を搭載するこ
とも可能になる．これによって、パッケージ自体を実装
密度の高いモジュールとすることが可能となり、電子装
置等の高集積化、小型化等が可能となる．
なお、上記実施例は半導体レーザ装置用パッケージの例
であるが、この他、放熱体を有する他の半導体装置用パ
ッケージについても同様に適用することができるもので
ある。Furthermore, by changing the size of the heat sink to a doll, it is also possible to mount a semiconductor element alone on the heat sink, and also to mount circuit boards 26 and 28 on the heat sink 22, as shown in FIG. become. This makes it possible to make the package itself into a module with high packaging density, making it possible to achieve higher integration and miniaturization of electronic devices. Note that although the above embodiment is an example of a package for a semiconductor laser device, the present invention can be similarly applied to other packages for semiconductor devices having a heat sink.
以上、本発明について好適な実施例を挙げて種々説明し
たが、本発明はこの実施例に限定されるものではなく、
発明の精神を逸脱しない範囲内で多くの改変を施し得る
のはもちろんのことである。The present invention has been variously explained above using preferred embodiments, but the present invention is not limited to these embodiments.
Of course, many modifications can be made without departing from the spirit of the invention.
（発明の効果）
本発明によれば、上述したように碑成したことにより，
アイレットに設けられる端子穴位置の制約を回避して放
熱体を配置することができ、従来と同一サイズのアイレ
ット上でも格段に大きな放熱体を形成することができる
。その結果、放熱体の熱放散性を向上させることができ
るとともに，放熱体上に回路基板等を搭桟し７Ｅ子装置
等の実装の高密度化が可能になる等の著効を奏する。(Effect of the invention) According to the present invention, by forming the monument as described above,
The heat radiator can be arranged while avoiding restrictions on the position of the terminal holes provided in the eyelet, and a much larger heat radiator can be formed on the eyelet of the same size as the conventional one. As a result, it is possible to improve the heat dissipation performance of the heat sink, and it is also possible to mount a circuit board or the like on the heat sink to achieve high-density mounting of 7E child devices, etc., and so on.
第１図および第２図は本発明に係る放熱体を有する半導
体装置用パッケージの一実施例を示す正面図および平面
図，第３図は放熱体接合前のパッケージの正面図、第４
図は放熱体の他の例を示す正面図，第５図は放熱体上に
回路基板を設けた例を示す斜視図，第６図および第７図
は放熱体を有する半導体装置用パッケージの従来例を示
す平面図である．
１０・・・アイレット、 １０ａ・・・接合突起、
１２・・・放熱体、 １４・・・端子穴、１６・・・リ
ード、 １７・・・アースリード，２０・・・半導体
レーザ素子、 ２２、２４・・・放熱体、 ２４ａ・・
・接合突起、
２６、２８・・・回路基板．
第
図
第
図
ｌ７
第
図1 and 2 are a front view and a plan view showing an embodiment of a package for a semiconductor device having a heat sink according to the present invention, FIG. 3 is a front view of the package before the heat sink is bonded, and FIG.
The figure is a front view showing another example of a heat sink, Figure 5 is a perspective view showing an example in which a circuit board is provided on a heat sink, and Figures 6 and 7 are conventional packages for semiconductor devices having a heat sink. FIG. 2 is a plan view showing an example. 10...Eyelet, 10a...Joint protrusion,
12... Heat sink, 14... Terminal hole, 16... Lead, 17... Earth lead, 20... Semiconductor laser element, 22, 24... Heat sink, 24a...
・Joining protrusions, 26, 28...Circuit board. Figure Figure l7 Figure
Claims (1)
アイレット上面に放熱体が接合されて成る放熱体を有す
る半導体装置用パッケージにおいて、 前記放熱体は、前記ガラスにより封止され る端子穴より離して設けた接合突起により、アイレット
の上面とは離間してアイレット上に接合されると共に、
放熱体前端部が端子穴上方に張り出していることを特徴
とする放熱体を有する半導体装置用パッケージ。[Scope of Claims] 1. A package for a semiconductor device having a heat radiator in which a lead wire is set in an eyelet using glass and a heat radiator is bonded to the upper surface of the eyelet, wherein the heat radiator is sealed with the glass. The connecting protrusion is provided at a distance from the terminal hole to be connected to the eyelet at a distance from the top surface of the eyelet, and
A package for a semiconductor device having a heat radiator characterized in that a front end of the heat radiator protrudes above a terminal hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5580089A JP2680110B2 (en) | 1989-03-07 | 1989-03-07 | Package for semiconductor device having heat radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5580089A JP2680110B2 (en) | 1989-03-07 | 1989-03-07 | Package for semiconductor device having heat radiator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02234457A true JPH02234457A (en) | 1990-09-17 |
| JP2680110B2 JP2680110B2 (en) | 1997-11-19 |
Family
ID=13008993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5580089A Expired - Fee Related JP2680110B2 (en) | 1989-03-07 | 1989-03-07 | Package for semiconductor device having heat radiator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2680110B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5644281A (en) * | 1992-04-07 | 1997-07-01 | Rohm Co., Ltd. | Electronic component incorporating solder fuse wire |
| JP2009212524A (en) * | 2009-04-10 | 2009-09-17 | Rohm Co Ltd | Semiconductor laser |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001111152A (en) * | 1999-10-06 | 2001-04-20 | Rohm Co Ltd | Semiconductor laser |
-
1989
- 1989-03-07 JP JP5580089A patent/JP2680110B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5644281A (en) * | 1992-04-07 | 1997-07-01 | Rohm Co., Ltd. | Electronic component incorporating solder fuse wire |
| JP2009212524A (en) * | 2009-04-10 | 2009-09-17 | Rohm Co Ltd | Semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2680110B2 (en) | 1997-11-19 |
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