JPH02233531A - Coating glass composition and semiconductor device - Google Patents
Coating glass composition and semiconductor deviceInfo
- Publication number
- JPH02233531A JPH02233531A JP5473089A JP5473089A JPH02233531A JP H02233531 A JPH02233531 A JP H02233531A JP 5473089 A JP5473089 A JP 5473089A JP 5473089 A JP5473089 A JP 5473089A JP H02233531 A JPH02233531 A JP H02233531A
- Authority
- JP
- Japan
- Prior art keywords
- glass composition
- semiconductor device
- film
- sog
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 30
- 239000000203 mixture Substances 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000011248 coating agent Substances 0.000 title abstract description 10
- 238000000576 coating method Methods 0.000 title abstract description 10
- 150000002291 germanium compounds Chemical class 0.000 claims abstract description 12
- GGQZVHANTCDJCX-UHFFFAOYSA-N germanium;tetrahydrate Chemical compound O.O.O.O.[Ge] GGQZVHANTCDJCX-UHFFFAOYSA-N 0.000 claims abstract description 11
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 6
- 125000000962 organic group Chemical group 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229940119177 germanium dioxide Drugs 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- -1 i (OC*Hs)4 Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000033558 biomineral tissue development Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Glass Compositions (AREA)
- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野１
本発明は、半導体技術に用いられる塗布ガラス組成物と
、その焼成物を絶縁膜に用いた半導体装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field 1] The present invention relates to a coated glass composition used in semiconductor technology and a semiconductor device using the fired product as an insulating film.
［発明の概要］
第１の発明は、塗布ガ．ラス組成物において、水酸化ゲ
ルマニウム及び／又は有機ゲルマニウム化合物をＳＯＧ
に含ＩＦさせたことにより、厚膜に形成してもクラック
を生じないようにしたものである。[Summary of the invention] The first invention is a coating gas. In the glass composition, germanium hydroxide and/or organic germanium compound is added to SOG.
By incorporating IF into the film, cracks will not occur even if it is formed into a thick film.
第２の発明は、絶縁膜が形成された半導体装置において
、
絶縁膜に水酸化ゲルマニウム及び／又は有機ゲルマニウ
ム化合物をＳＯＧに含有してなる塗布ガラス焼成物を用
いたことにより、
絶縁膜へのクラック発生を防止すると共に平坦化をより
効果的にするようにしたものである。The second invention is a semiconductor device in which an insulating film is formed, and the cracks in the insulating film are prevented by using a coated glass fired product containing germanium hydroxide and/or an organic germanium compound in SOG for the insulating film. This is intended to prevent the occurrence of such problems and to make flattening more effective.
［従来の技術］
近年、ＬＳＩの高密度化には微細な多層配線が不可欠で
あり、多屓配線技術においては層間絶縁膜の平坦化は最
も重要な課題の一つとなっている。[Prior Art] In recent years, fine multilayer wiring is essential for increasing the density of LSIs, and planarization of interlayer insulating films has become one of the most important issues in multilayer wiring technology.
この方法としては、例えば、月刊Ｓｅｓｉｃｏｎｄｕｔ
ｏｒｆｏｒｌｄ １ ９ ８ ８ ．７の第４９〜第５
４頁に記載されているようなＳ Ｏ Ｇ （Ｓｐｉｎ
Ｏｎ Ｇｌａｓｓ）を用いた成膜技術が知られており、
主にＳ ｉ （ＯＨ） ．を主成分とするＳＯＣと、Ｓ
ｉ （ＯＣ＊Ｈｓ）４などの有機シリコン化合物を主
成分とするＳＯＧがれたものであって、厚膜化してもク
ラックの生じある。This method includes, for example, the Monthly Sesicondut
orford 1 9 8 8 . 7 49th to 5th
S O G (Spin
On Glass) is known as a film-forming technology.
Mainly S i (OH). SOC whose main component is S
It is a SOG film whose main component is an organic silicon compound such as i (OC*Hs)4, and cracks may occur even when the film is thickened.
［発′明が解決しようと矛る課題］
しかしながら、このような従来例にあっては、以下のよ
うな問題点を有している。[Problems that the invention attempts to solve] However, such conventional examples have the following problems.
先ず、Ｓ ｉ （ＯＨ）４を主成分とするＳＯＣは、厚
膜化するとクラックを生じ易いため、十分な平坦化形成
を得ることが出来ない問題点がある。First, SOC whose main component is S i (OH) 4 tends to crack when it becomes thick, so there is a problem that it is not possible to obtain sufficient planarization.
また、Ｓ ｉ （ＯＣ＊Ｈｓ）４などの有機シリコン化
合物を主成分とするＳＯＧは、有機基の存在により、縮
合反応による収縮が抑制されるものの、５００℃以上の
熱処理により有機基の分解が起りクラックが生じる問題
点がある。In addition, SOG whose main component is an organosilicon compound such as Si (OC*Hs)4 is suppressed from shrinking due to condensation reactions due to the presence of organic groups; There is a problem that cracks occur.
そこで、Ｓ ｉ （ Ｏ Ｃ ＊ Ｈ ｓ ）などの有
機シリコン化合物を主成分とするＳＯＧに、リン（Ｐつ
を添加し、溶融温度を下げてクラックを抑えることが試
みられているが、クラックの発生を抑止出来ないのが現
状である。Therefore, attempts have been made to add phosphorus (P) to SOG whose main component is an organic silicon compound such as Si (OC * H s ) to lower the melting temperature and suppress cracks. The current situation is that the occurrence cannot be prevented.
本発明は、斯る従来の問題点に着目して創案さない塗布
ガラス組成物及びクラックの生じない絶縁膜を有する半
導体装置を得んとするものである。The present invention aims to provide a semiconductor device having a coated glass composition and an insulating film that do not cause cracks, which are not invented by paying attention to such conventional problems.
［課題を解決するための手段］
そこで、第１の発明は、水酸化ゲルマニウム及び／又は
有機ゲルマニウム化合物をＳＯＧに含有させたことを、
その解決手段としている。[Means for Solving the Problems] Therefore, the first invention includes the following steps: SOG contains germanium hydroxide and/or an organic germanium compound.
This is the solution.
また、第２の発明は、絶縁膜に水酸化ゲルマニウム及び
／又゜は有機ゲルマニウム化合物をＳＯＧに含有してな
る塗布ガラス焼成物を用いたことを、解決手段としてい
る。Moreover, the second invention uses, as a solution, a coated glass fired product containing germanium hydroxide and/or an organic germanium compound in SOG for the insulating film.
［作用］
水酸化ゲルマニウム及び／又は有機ゲルマニウム化合物
をＳＯＧに含有させたことにより、焼成物中に二酸化ゲ
ルマニウムが生成される。この二酸化ゲルマニウムは、
低い溶融温度を有し、これを含有したＳＯＧは、有機基
の解離反応の温度ですでにガラス溶融を起すため、クラ
ブクの発生が防止され、厚膜化することが可能となる。[Function] By incorporating germanium hydroxide and/or an organic germanium compound into SOG, germanium dioxide is generated in the fired product. This germanium dioxide is
SOG that has a low melting temperature and contains it already causes glass melting at the temperature of the dissociation reaction of the organic group, thereby preventing the occurrence of cracks and making it possible to form a thick film.
また、斯る塗布ガラス組成物を半導体装置の絶縁膜に用
いることにより、厚膜な平坦化膜を良好に形成すること
が可能となる。Moreover, by using such a coated glass composition for an insulating film of a semiconductor device, it becomes possible to form a thick planarizing film in good condition.
［実施例］
以下、本発明に係る塗布ガラス組成物及び半導体装置の
詳細を実施例に基づいて説明する。[Examples] Hereinafter, details of the coated glass composition and semiconductor device according to the present invention will be described based on Examples.
先ず、塗布ガラス組成物は、水酸化ゲルマニウム及び／
又は有機ゲルマニウム化合物をＳＯＧに含有させたもの
である。なお、ＳＯＧは、ケイ化化合物を有機溶剤で溶
かしたものである。First, the coated glass composition contains germanium hydroxide and/or
Or SOG contains an organic germanium compound. Note that SOG is a silicide compound dissolved in an organic solvent.
水酸化ゲルマニウムは、ゲルマニウム（Ｇｅ）と水酸基
（ＯＨ）が結合したものであり、有機ゲルマニウム化合
物は、Ｇｅと、Ｃ Ｈ ３． Ｃ ＊Ｈ ｓ，Ｏ Ｃ
Ｈ ３． Ｏ Ｃ ＊Ｈ ｓ等の有機基が結合したもの
である。Germanium hydroxide is a combination of germanium (Ge) and a hydroxyl group (OH), and an organic germanium compound is a combination of Ge and C H 3. C *H s, O C
H3. It is one in which organic groups such as O C *H s are bonded.
本実施例においては、有機ゲルマニウムとしてＧｅ （
ＯＣ＊Ｈｓ）４を１に対して有機シリコンＳｉ （ＯＣ
＊Ｈｓ） ４を２の重量比でＳＯＧに含有させたもので
ある。In this example, Ge (
Organic silicon Si (OC*Hs)4 to 1
*Hs) 4 is contained in SOG at a weight ratio of 2.
次に、このような組成物を焼成させる条件を、半導体装
置の絶縁膜に適用して説明する。Next, conditions for firing such a composition will be explained by applying it to an insulating film of a semiconductor device.
先ず、第１図に示すように、例えば、シリコン基板ｌ上
に、ＣＶＤ法にて堆積されたＳｉｎｓ膜を形成し、さら
に多結晶シリコンでなるＰ−Ｓｉ配線３を形成する。First, as shown in FIG. 1, for example, a Sins film deposited by CVD is formed on a silicon substrate 1, and then a P-Si wiring 3 made of polycrystalline silicon is formed.
次に、上記塗布ガラス組成物４を、ＳｉＯｚ膜２及びＰ
−Ｓｔ配線３の上にスピンコート（第２図）する。この
状態でｌＯ゛０℃乃至２００℃でベークして溶媒を揮発
させた後、約４００℃の熱処理を行ない、綜合反応を起
させる。そして、６５０℃の酸素ガス中で有機基を解離
させると、第３図に示すように、絶縁膜としての焼成物
としての無機ガラス膜５を得ることが出来る。Next, the coated glass composition 4 was applied to the SiOz film 2 and P.
- Spin coat on the St wiring 3 (FIG. 2). In this state, it is baked at 10°C to 200°C to volatilize the solvent, and then heat-treated at about 400°C to cause a synthesis reaction. Then, by dissociating the organic groups in oxygen gas at 650° C., an inorganic glass film 5 can be obtained as a fired product as an insulating film, as shown in FIG.
このようにして無機ガラス膜５が形成された後は、所望
の製造プロセスを施すことにより半導体装置が完成する
。After the inorganic glass film 5 is formed in this manner, a desired manufacturing process is performed to complete the semiconductor device.
なお、本実施例で形成した無機ガラス膜５は、層間絶縁
膜として用いる他に、パッシベーション膜等各種の絶縁
膜として用いることが可能である。The inorganic glass film 5 formed in this example can be used not only as an interlayer insulating film but also as various insulating films such as a passivation film.
また、６５０℃の酸素ガス中の有機基解離を行なった無
機処理の際に、ガラス膜はこの温度ですでに軟化を起す
ため、応力は緩和され、クラブクは生じない。Furthermore, during the inorganic treatment in which organic groups are dissociated in oxygen gas at 650° C., the glass film already softens at this temperature, so stress is relaxed and cracks do not occur.
このため、絶縁膜であるガラス膜を厚膜化させてもクラ
ックを生じることなく、良好な膜形成が可能となる。Therefore, even if the glass film, which is an insulating film, is made thicker, no cracks will occur, and a good film can be formed.
以上、実施例について説明したが、塗布ガラス組成物と
しては、この他各種のものが適用される。Although Examples have been described above, various other types of coating glass compositions may be used.
例えば、ゲルマニウム化合物としては、ＧｅとＯＨ，Ｃ
Ｈ ｓ ， Ｃ ！ Ｈ ｓ ， Ｏ Ｃ Ｈ ｓ等
の結合したもの、あるいは、これらの混合物を用いるこ
とが出来、要は最終的な無機化熱処理で二酸化ゲルマニ
ウム（ＧｅＯ，）を形成するものであれば、同様の効果
を得ることが可能である。For example, germanium compounds include Ge, OH, C
Hs, C! A combination of H s , O C H s, etc., or a mixture thereof can be used, and in short, if germanium dioxide (GeO,) is formed in the final mineralization heat treatment, the same effect can be obtained. It is possible to obtain
また、上記の組成物にリン（Ｐ）．ヒ素（Ａｓ），ホウ
素（Ｂ）等を添加してもよく、この場合ガラス溶融温度
はさらに低くなり、クラックの発生は、より効果的に抑
止される。The above composition also contains phosphorus (P). Arsenic (As), boron (B), etc. may be added, and in this case, the glass melting temperature is further lowered, and the occurrence of cracks is more effectively suppressed.
〔発明の効果」
以上の説明で明らかなように、本発明に係る塗布ガラス
組成物にあっては、厚膜に形成した場合もクラックを生
じることがないため、これを半導体装置の絶縁膜に適用
した場合、良好な絶縁膜（層間絶縁膜．バッシベーショ
ン膜等）を得ることが出来、構造及び特性上良好な半導
体装置の作成が可能となる効果がある。[Effects of the Invention] As is clear from the above explanation, the coated glass composition according to the present invention does not cause cracks even when formed into a thick film, so it can be applied to an insulating film of a semiconductor device. When applied, a good insulating film (an interlayer insulating film, a passivation film, etc.) can be obtained, and a semiconductor device with good structure and characteristics can be produced.
第１図〜第３図は本発明に係る塗布ガラス組成物及び半
導体装置の実施例を示す断面図である。
４・・・申布ガラス組成物、５・・・無機ガラス膜。1 to 3 are cross-sectional views showing examples of a coated glass composition and a semiconductor device according to the present invention. 4... Shenpu glass composition, 5... Inorganic glass film.
Claims (2)
化合物をＳＯＧに含有させたことを特徴とする塗布ガラ
ス組成物。(1) A coated glass composition characterized in that SOG contains germanium hydroxide and/or an organic germanium compound.
マニウム化合物をＳＯＧに含有してなる塗布ガラス焼成
物を用いたことを特徴とする半導体装置。(2) A semiconductor device characterized in that an insulating film is made of a fired coated glass containing germanium hydroxide and/or an organic germanium compound in SOG.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5473089A JPH02233531A (en) | 1989-03-07 | 1989-03-07 | Coating glass composition and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5473089A JPH02233531A (en) | 1989-03-07 | 1989-03-07 | Coating glass composition and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02233531A true JPH02233531A (en) | 1990-09-17 |
Family
ID=12978919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5473089A Pending JPH02233531A (en) | 1989-03-07 | 1989-03-07 | Coating glass composition and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02233531A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08264523A (en) * | 1995-03-22 | 1996-10-11 | Nec Corp | Sog material and fabrication of semiconductor device employing it |
| JP2006013503A (en) * | 2004-06-29 | 2006-01-12 | Internatl Business Mach Corp <Ibm> | Doped nitride film, doped oxide film, and other doped films |
-
1989
- 1989-03-07 JP JP5473089A patent/JPH02233531A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08264523A (en) * | 1995-03-22 | 1996-10-11 | Nec Corp | Sog material and fabrication of semiconductor device employing it |
| JP2006013503A (en) * | 2004-06-29 | 2006-01-12 | Internatl Business Mach Corp <Ibm> | Doped nitride film, doped oxide film, and other doped films |
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