JPH02232956A - Semiconductor device - Google Patents

Abstract

PURPOSE:To make an upper element large enough in heat dissipating property to enable a current to flow through both the upper and the lower element at the same time by a method wherein flat semiconductor elements stacked in two or more stages are housed inside a case-shaped heat dissipating fin, and a bus bar in close contact with the upper element is brought into contact with the inner wall inside the fin through the intermediary of an insulating board. CONSTITUTION:A heat dissipating fin 4 is composed of case 8 provided with a side wall 4a which protrudes upward so as to surround semiconductor elements 1a and 1b inside it. The flat type semiconductor elements 1a and 1b are stacked in two stages on the inner base of the case 8 through the intermediary of insulating boards 2a and 2b and bus bars 3a-3c. The ends of the bus bars 3a and 3b brought into close contact with the electrodes of the upper element 1a are brought into close contact with the inner face of the side wall 4a of the fin 4 through the intermediary of an insulating board 2c. A spring 7 is fastened tight with bolts 5 and nuts 6 so as to press down the upside of the element 1a through the intermediary of the insulating board 2a, and the case 8 makes an electrically conductive part insulated from the outside excluding the ends of the bus bars. By this setup, heat released from the element 1a is rapidly conducted to the fin 4a through the bars 3a and 3b and the insulating board 2c.

Description

[Detailed Description of the Invention] (Industrial Application Field) This invention provides external insulation of a flat meridian conductor element, and
The present invention relates to an assembly structure of a semiconductor device that satisfies heat dissipation.

(Prior art) In a semiconductor device using a flat semiconductor element, in order to provide external insulation and to effectively dissipate heat generated from the Hirasugi semiconductor element for cooling, it is necessary to use the conventional Hirasugi semiconductor element. There are many types that provide an insulating function near the electrodes and have heat dissipation fins, etc. Figure 2 is an example of a conventional semiconductor device of this type.
In the figure, lB. ．． lb is a semiconductor element mounted in two stages on the curve of insulating plates 2 and 2b, sockets 3h and 3c are busbars for taking out the electrodes inserted between them, 4 is a 7 inch for heat radiation, and 5 is installed on top of this fin. 6 is a nut screwed onto the bolt, and 7 is a spring installed between the bolts, forming a pressure welding mechanism.

8 is a case, which maintains insulation from the outside.

Note that in the figure, a part of the case is removed to make the interior easier to understand.

Next, the operation of the 0-plane semiconductor element 1a1tb will be explained.
In this case, it is sandwiched between a rigid heat dissipating 7-in-4 and a spring 7 and tightened with bolts 6 and nuts 6 to form a pressure welding mechanism.

In addition, in order to flow air into the flat conductor element, a pass bar for taking out the "a" pole is usually provided in close proximity to the #'IIL pole of the element, and these conductive elements are insulated from the outside. Insulating plates 2 & s2b are arranged above and below for this purpose.

Approximately flat semiconductor elements generate a large amount of heat when energized,
If this heat is not dissipated efficiently, the element will be destroyed due to the temperature rise. For this reason, the insulating plates 2 & 2b are made of a material with good thermal conductivity (ceramic, for example), and quickly transfer heat to the heat dissipating 7-in-4.
The heat is radiated from the inside to the outside air. Further, the case 8 isolates the conductive IE portions other than the pass bar for electrode connection from the outside, thereby forming an externally insulated semiconductor device.

[The problem that the invention attempts to solve]

The conventional externally insulated conductor device for flat semiconductor devices was constructed as described above, but since the upper element 11 of the two-layered elements is not in direct contact with the heat dissipation fins. However, there was a problem in that heat dissipation was not sufficient and sufficient current could not be passed. This invention was made to solve the above problems, and the upper layered flat semiconductor element also It is an object of the present invention to provide a semiconductor device that enables sufficient heat dissipation and allows sufficient current to flow through the element.

[Means to solve the problem]

The semiconductor device according to the present invention has a case-shaped heat dissipation fin that houses planar conductor elements laminated in multiple stages, and a shape of a pass bar for taking out electrodes from the upper element. When assembled, the fins are brought into close contact with the inner side walls of the radiation fins via an insulating plate.

[Effect]

Due to the structure of the bus bar and heat dissipation fin in this invention, the heat generated from the upper flat semiconductor element is transmitted from the bus bar with good thermal conductivity to the heat dissipation fin through the insulating plate, and is sufficiently radiated into the air.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

4 is a case-shaped heat dissipating 7-inch with a side wall 4a protruding from the top so as to surround the internal conductor element 1m, lb;
Insulating plate 2a on the inside bottom surface. 2b and Busuba 3 Turtle 3 Sword 3
The flat semiconductor elements 1a and 1a are stacked with each other in a two-tier structure. The end portions of the push bars 3a, 3b that are in close contact with both electrodes of the upper element 1& are formed in close contact with the inner surface of the side wall of the heat radiation fin 4 via another insulating plate 2o. The spring 7 is tightened with a bolt 6 and a nut 6 so as to press down the upper part of the element through the insulator 2a, thereby forming a press-contact mechanism. Further, the case 8 is designed to block conductive elements from the outside except for one end of the push bar.

Next, the operation of the above configuration will be explained.

Push bars 3a and 3b having good thermal conductivity, such as copper, are in close contact with the electrode surface of the upper flat semiconductor element 1a, and the yI1 portion of this push bar is connected to the heat dissipating fin 4 through an insulating plate 2o. Since it is in contact with the internal side wall, the upper element 1
The heat generated from a is quickly transmitted from the insulating plate 2c to the heat radiating 7-in-4a through the iris and a, and finally is radiated into the outside air. Note that the lower element 1b also radiates heat through a similar path, so that the two elements radiate heat at the same level, and the current carrying capacity as a whole is greatly increased. In the above embodiment, the heat dissipation fin 4 has a plurality of pleats and has a heat dissipation function by itself.
It may be a simple plate-like structure that is attached to another heat dissipation fin.

Further, in the above embodiment, the elements are arranged in two stages, but it goes without saying that the present invention can also be applied to a structure in which the I/li layers are arranged in eight or more stages.

〔Effect of the invention〕

As described above, according to the present invention, a plurality of layers of flat semiconductor elements are housed inside a case-like heat dissipation fin, and a pass bar that is in close contact with the upper element is attached to the Sa wall inside the heat dissipation fin via an insulating plate. Since the structure is configured so that the two elements are in contact with each other, sufficient heat can be dissipated from the upper side of the element, and therefore, it is possible to conduct electricity in the same way as the element on the lower side, which has the effect of greatly improving the current carrying capacity as a whole.

[Brief explanation of the drawing]

FIG. 1 is a partially cutaway front view showing a meridian device according to an embodiment of the present invention, and a second decoy is a diagram showing a conventional meridian device. In the figure, 1 rotation ratio is a conductor element, 2aqZbJo is an insulating plate,
Therefore, &3a is a push bar, 4 is a cooling fin, 4a is a side wall of the cooling fin, 5 is a bolt, 6 is a nut, 7 is a spring, and 8 is a case. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

[Claims] In a semiconductor device in which a plurality of flat semiconductor elements are stacked on a heat dissipation fin via an insulating plate and a bus bar, and these are clamped from above by a pressure welding mechanism via an insulating plate, the heat dissipation fin is configured in a case shape. , a semiconductor device in which the plurality of stages of semiconductor elements are housed therein, and an end of a bus bar that is in close contact with the upper element is in contact with an inner side wall of a heat dissipation fin via an insulating plate.