JPS5839042A - Semiconductor heater - Google Patents
Semiconductor heaterInfo
- Publication number
- JPS5839042A JPS5839042A JP13685181A JP13685181A JPS5839042A JP S5839042 A JPS5839042 A JP S5839042A JP 13685181 A JP13685181 A JP 13685181A JP 13685181 A JP13685181 A JP 13685181A JP S5839042 A JPS5839042 A JP S5839042A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- energized
- heat
- heating element
- semiconductor heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、正の温度抵抗係数を有する半導体発熱素子へ
の通電を複数段に切換えることにより発熱量の切換を自
在となして半導体ヒータ装置を小型になすとともに半導
体発熱素子への通電回路を簡単になすことを目的とする
。DETAILED DESCRIPTION OF THE INVENTION The present invention makes it possible to freely switch the amount of heat generated by switching the energization to a semiconductor heat generating element having a positive temperature resistance coefficient in multiple stages, thereby making the semiconductor heater device compact and reducing the size of the semiconductor heater device. The purpose is to simplify the current supply circuit to the element.
従来における半導体ヒータ装置は第2図に示すような構
成をしており、1は半導体発熱素子、2は電極板、3は
放熱フィン、4は端子板で、電極板2と放熱フィン3と
端子板4とはアルミニウム、2(−二
により構成され、半導体発熱素子1を導電挟持している
。A conventional semiconductor heater device has a configuration as shown in Fig. 2, in which 1 is a semiconductor heating element, 2 is an electrode plate, 3 is a radiation fin, and 4 is a terminal plate. The plate 4 is made of aluminum and 2 (-2), and conductively holds the semiconductor heating element 1 therebetween.
そしてこのような構成の半導体ヒータ装置を複数個並列
に接続することによって所定の発熱量を得ていた。A predetermined amount of heat is obtained by connecting a plurality of semiconductor heater devices having such a configuration in parallel.
この場合の並列接続は、端子板4の端子6よりのリード
線を用いてなしていた。しかし半導体ヒータ装置の数が
多くなると、それぞれの半導体ヒータ装置から引き出さ
れるリード線が多くなって回路が複雑となり、また半導
体ヒータ装置それぞれの間の絶縁対策も考慮しなければ
ならながった6その結果、夏ベースが大きくとられ、特
に高発熱量を得るには非常に不具合を生じていた。In this case, the parallel connection was made using lead wires from the terminals 6 of the terminal board 4. However, as the number of semiconductor heater devices increases, the number of lead wires drawn out from each semiconductor heater device increases, making the circuit complex, and it is also necessary to consider insulation measures between each semiconductor heater device6. As a result, a large amount of heat is required in the summer, which is particularly problematic when it comes to obtaining a high calorific value.
本発明は、上記従来の欠点を除去したもので、以下その
一実施例について第1図を参照して詳述する。The present invention eliminates the above-mentioned conventional drawbacks, and one embodiment thereof will be described in detail below with reference to FIG. 1.
図2面において、6は正の温度抵抗係数を有する半導体
発熱素子、7は半導体発熱素子60両面に導電接触させ
た電極板、8は一側面が電極板7K、他側面が外端子板
9にそれぞれ接触された通電雷3、、:
極を兼ねる放熱フィンで、これら電極板7.放熱フィン
8.および端子板9はいずれもアルミニウムにより形成
されて半導体発熱素子6を導電挟持している。10.1
1は発熱量が切換できるように空間部12により分離さ
れている中端子板でアルミニウムにより形成されている
。12は空間部で、半導体発熱素子60当接を防止し、
かつ発熱量を確実にする・ための絶縁層を形成している
。半導体発熱素子6,6は、それぞれA部分とC部分、
−およびB部分とD部分に部分され、そしてA部分およ
びB部分は外端子板9と中端子板10により、またC部
分およびD部分は外端子板9と中端子板11によりそれ
ぞれ通電発熱される。13は電源、14は半導体発熱素
子6の発熱量を切換えるスイッチで、閉路すると外端子
板9と中端子板10゜11とに通電されるので、半導体
発熱素子6のム。In FIG. 2, 6 is a semiconductor heating element having a positive temperature resistance coefficient, 7 is an electrode plate that is in conductive contact with both sides of the semiconductor heating element 60, and 8 is an electrode plate 7K on one side and an outer terminal plate 9 on the other side. The lightning fins 3, . . . are in contact with each other: These electrode plates 7. Heat dissipation fin8. Both terminal plates 9 are made of aluminum and conductively sandwich the semiconductor heating element 6 therebetween. 10.1
Reference numeral 1 denotes an intermediate terminal plate separated by a space 12 so that the amount of heat generated can be changed, and is made of aluminum. 12 is a space portion that prevents the semiconductor heating element 60 from coming into contact with it;
In addition, an insulating layer is formed to ensure the amount of heat generated. The semiconductor heating elements 6, 6 are respectively A part and C part,
-, B part and D part, and the A part and B part are energized and heated by the outer terminal board 9 and the middle terminal board 10, and the C part and D part are respectively heated by the outer terminal board 9 and the middle terminal board 11. Ru. 13 is a power supply; 14 is a switch for changing the amount of heat generated by the semiconductor heating element 6; when the circuit is closed, the outer terminal plate 9 and the inner terminal plate 10 and 11 are energized;
B 、C、D部分すべてに通電されて弾発熱量となり、
また開路するも中端子板11には通電されないので、A
、B部分にのみ通電されて弱発熱量を得ることができる
。All parts B, C, and D are energized and generate elastic heat,
Also, although the circuit is opened, the middle terminal board 11 is not energized, so A
, it is possible to obtain a weak amount of heat by energizing only the B portion.
分割された半導体発熱素子6は、放熱フィン8を介して
外端子板9と中端子板10.11とにより一体に挟持さ
れることにより、−個の発熱体として構成でき、また発
熱量は、中端子部が部分されていることにより多数段の
切換が可能となり極めてコンパクトにまとめることがで
きる。The divided semiconductor heating element 6 is integrally held between the outer terminal plate 9 and the inner terminal plate 10.11 via the radiation fins 8, so that it can be configured as - heating elements, and the amount of heat generated is as follows. Since the middle terminal section is divided, multiple stages of switching are possible, and the device can be made extremely compact.
以上のように本発明は、放熱フィンを介して端子板によ
り挟持した正の温度抵抗係数を有する半導体発熱素子を
複数個に分割するとともに上記端子板の少くとも一方は
この発熱素子に対応して分割し、かつ上記端子板は切換
スイッチを介して電源に接続しているので、発熱量を種
々に切換えることができ、また一つの半導体ヒータ装置
に発熱素子が複数個が組込まれていても小型化にするこ
とができスペースをとらない工業的価値の犬なるもので
ある。As described above, the present invention divides a semiconductor heating element having a positive temperature resistance coefficient into a plurality of pieces, which are sandwiched between terminal plates via heat dissipation fins, and at least one of the terminal plates corresponds to the heating element. Since the terminal board is separated and connected to the power supply via a changeover switch, the amount of heat generated can be changed to various values, and even if multiple heating elements are incorporated into one semiconductor heater device, it is compact. It is a dog of industrial value that can be made into a small size and does not take up much space.
第1図は本発明の一実施例における半導体ヒータ装置の
構成説明図、第2図は従来における半導体i−タ装置の
構成説明図である。
5 、−。
6・・・・・・半導体発熱素子、8・・・・・・放熱フ
ィン、9・・・・・・外端子板、1o、11・・・・・
・中端子板、13・・・・・・電源、14・・・・・・
スイッチ。FIG. 1 is an explanatory diagram of the configuration of a semiconductor heater device according to an embodiment of the present invention, and FIG. 2 is an explanatory diagram of the configuration of a conventional semiconductor heater device. 5,-. 6...Semiconductor heating element, 8...Radiation fin, 9...Outer terminal board, 1o, 11...
・Middle terminal board, 13...Power supply, 14...
switch.
Claims (1)
係数を有する半導体発熱素子を複数個に分割するととも
・に上記端子板の少くとも一方はこの発熱素子に対応し
て分割し、かつ上記端子板は切換スイッチを介して電源
に接続してなる半導体ヒータ装置。A semiconductor heating element having a positive temperature resistance coefficient, which is sandwiched by a terminal plate via a radiation fin, is divided into a plurality of pieces, and at least one of the terminal plates is divided corresponding to this heating element, and the terminal plate is divided into a plurality of pieces. The board is a semiconductor heater device that is connected to the power source via a changeover switch.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13685181A JPS5839042A (en) | 1981-08-31 | 1981-08-31 | Semiconductor heater |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13685181A JPS5839042A (en) | 1981-08-31 | 1981-08-31 | Semiconductor heater |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5839042A true JPS5839042A (en) | 1983-03-07 |
JPH0340505B2 JPH0340505B2 (en) | 1991-06-19 |
Family
ID=15184982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13685181A Granted JPS5839042A (en) | 1981-08-31 | 1981-08-31 | Semiconductor heater |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5839042A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3907665A1 (en) * | 1988-03-10 | 1989-10-12 | Murata Manufacturing Co | PTC THERMISTOR DEVICE WITH RADIATORS |
US4963716A (en) * | 1987-05-01 | 1990-10-16 | Texas Instruments Incorporated | Vehicular air heater using PTC heater tablets associated with funnel heat exchanges |
US5057672A (en) * | 1988-07-15 | 1991-10-15 | Apparte und Heizwiderstande GmbH | Radiator having ptc electric resistance heating elements and spring-biased fin arrangement |
GB2375431A (en) * | 2001-05-10 | 2002-11-13 | Bookham Technology Plc | Device with integrated semiconductor temperature sensor and/or localised heater |
-
1981
- 1981-08-31 JP JP13685181A patent/JPS5839042A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4963716A (en) * | 1987-05-01 | 1990-10-16 | Texas Instruments Incorporated | Vehicular air heater using PTC heater tablets associated with funnel heat exchanges |
DE3907665A1 (en) * | 1988-03-10 | 1989-10-12 | Murata Manufacturing Co | PTC THERMISTOR DEVICE WITH RADIATORS |
US4931626A (en) * | 1988-03-10 | 1990-06-05 | Murata Manufacturing Co., Ltd. | PIC thermistor device having heat radiation fins with adjustable temperature regulating guide plates |
US5057672A (en) * | 1988-07-15 | 1991-10-15 | Apparte und Heizwiderstande GmbH | Radiator having ptc electric resistance heating elements and spring-biased fin arrangement |
GB2375431A (en) * | 2001-05-10 | 2002-11-13 | Bookham Technology Plc | Device with integrated semiconductor temperature sensor and/or localised heater |
GB2375431B (en) * | 2001-05-10 | 2003-11-05 | Bookham Technology Plc | Method and device for balancing temperature |
Also Published As
Publication number | Publication date |
---|---|
JPH0340505B2 (en) | 1991-06-19 |
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