JPH02232929A - Semiconductor device with buried layer - Google Patents

Semiconductor device with buried layer

Info

Publication number
JPH02232929A
JPH02232929A JP5327989A JP5327989A JPH02232929A JP H02232929 A JPH02232929 A JP H02232929A JP 5327989 A JP5327989 A JP 5327989A JP 5327989 A JP5327989 A JP 5327989A JP H02232929 A JPH02232929 A JP H02232929A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
buried layer
type
end part
central region
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5327989A
Inventor
Naoto Fujishima
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To relieve the end part electric field concentration in a buried layer for augmenting the breakdown strength of the buried layer by a method wherein the impurity concentration in the end part regions of the buried layer is made lower than that in the central region of the same.
CONSTITUTION: The title semiconductor device is provided with an n type buried layer 10 formed on a p type semiconductor substrate 1, isolation to p+ type buried layers 3, n type epitaxial layers 4 deposited on the substrate 1 and p+ isolation layers 5 in contact with the buried layers 3 sectioning the said layers 4. The buried layer 10 immidiately below the sectioned regions is composed of a central region 12 and end part regions 14 overlapped with the central region 12 at the respective peripheral parts thereof and the central region 12 is to be an n+ type region in high impurity concentration while the end part regions 14 are to be n-type regions in lower impurity concentration than that of the central region 12. Through these procedures, the concentration work of electric line of force due to the curvature of the end part regions 14 can be cancelled or relieved.
COPYRIGHT: (C)1990,JPO&Japio
JP5327989A 1989-03-06 1989-03-06 Semiconductor device with buried layer Pending JPH02232929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5327989A JPH02232929A (en) 1989-03-06 1989-03-06 Semiconductor device with buried layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5327989A JPH02232929A (en) 1989-03-06 1989-03-06 Semiconductor device with buried layer

Publications (1)

Publication Number Publication Date
JPH02232929A true true JPH02232929A (en) 1990-09-14

Family

ID=12938299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5327989A Pending JPH02232929A (en) 1989-03-06 1989-03-06 Semiconductor device with buried layer

Country Status (1)

Country Link
JP (1) JPH02232929A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216802A (en) * 2005-02-04 2006-08-17 Hitachi Ltd Semiconductor device
US8018006B2 (en) 2005-02-04 2011-09-13 Hitachi Ulsi Systems Co., Ltd. Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147546A (en) * 1984-12-20 1986-07-05 Sanyo Electric Co Ltd Bipolar type semiconductor device
JPS63202965A (en) * 1987-02-19 1988-08-22 Sanyo Electric Co Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147546A (en) * 1984-12-20 1986-07-05 Sanyo Electric Co Ltd Bipolar type semiconductor device
JPS63202965A (en) * 1987-02-19 1988-08-22 Sanyo Electric Co Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216802A (en) * 2005-02-04 2006-08-17 Hitachi Ltd Semiconductor device
US8018006B2 (en) 2005-02-04 2011-09-13 Hitachi Ulsi Systems Co., Ltd. Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation

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