JPH022312B2 - - Google Patents

Info

Publication number
JPH022312B2
JPH022312B2 JP56131224A JP13122481A JPH022312B2 JP H022312 B2 JPH022312 B2 JP H022312B2 JP 56131224 A JP56131224 A JP 56131224A JP 13122481 A JP13122481 A JP 13122481A JP H022312 B2 JPH022312 B2 JP H022312B2
Authority
JP
Japan
Prior art keywords
junction
depletion layer
radiation detector
radiation
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56131224A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5833877A (ja
Inventor
Noritada Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Co Ltd
Priority to JP56131224A priority Critical patent/JPS5833877A/ja
Publication of JPS5833877A publication Critical patent/JPS5833877A/ja
Publication of JPH022312B2 publication Critical patent/JPH022312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • H10F30/2955Shallow PN junction radiation detectors

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
JP56131224A 1981-08-21 1981-08-21 半導体放射線検出器 Granted JPS5833877A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56131224A JPS5833877A (ja) 1981-08-21 1981-08-21 半導体放射線検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56131224A JPS5833877A (ja) 1981-08-21 1981-08-21 半導体放射線検出器

Publications (2)

Publication Number Publication Date
JPS5833877A JPS5833877A (ja) 1983-02-28
JPH022312B2 true JPH022312B2 (enrdf_load_stackoverflow) 1990-01-17

Family

ID=15052928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56131224A Granted JPS5833877A (ja) 1981-08-21 1981-08-21 半導体放射線検出器

Country Status (1)

Country Link
JP (1) JPS5833877A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5833877A (ja) 1983-02-28

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