JPS6327868B2 - - Google Patents

Info

Publication number
JPS6327868B2
JPS6327868B2 JP57162839A JP16283982A JPS6327868B2 JP S6327868 B2 JPS6327868 B2 JP S6327868B2 JP 57162839 A JP57162839 A JP 57162839A JP 16283982 A JP16283982 A JP 16283982A JP S6327868 B2 JPS6327868 B2 JP S6327868B2
Authority
JP
Japan
Prior art keywords
layer
oxide film
radiation
metal oxide
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57162839A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5952884A (ja
Inventor
Noritada Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP57162839A priority Critical patent/JPS5952884A/ja
Publication of JPS5952884A publication Critical patent/JPS5952884A/ja
Priority to US06/698,616 priority patent/US4960436A/en
Publication of JPS6327868B2 publication Critical patent/JPS6327868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP57162839A 1982-09-18 1982-09-18 放射線または光検出用半導体素子の製造方法 Granted JPS5952884A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57162839A JPS5952884A (ja) 1982-09-18 1982-09-18 放射線または光検出用半導体素子の製造方法
US06/698,616 US4960436A (en) 1982-09-18 1985-02-06 Radiation or light detecting semiconductor element containing heavily doped p-type stopper region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57162839A JPS5952884A (ja) 1982-09-18 1982-09-18 放射線または光検出用半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5952884A JPS5952884A (ja) 1984-03-27
JPS6327868B2 true JPS6327868B2 (enrdf_load_stackoverflow) 1988-06-06

Family

ID=15762219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57162839A Granted JPS5952884A (ja) 1982-09-18 1982-09-18 放射線または光検出用半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5952884A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01287468A (ja) * 1988-05-16 1989-11-20 Fuji Xerox Co Ltd ランダム空間パターンの移動情報検出方法
JPH0614913U (ja) * 1992-07-22 1994-02-25 株式会社アイチコーポレーション 作業装置の作動変位検出装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7288825B2 (en) * 2002-12-18 2007-10-30 Noble Peak Vision Corp. Low-noise semiconductor photodetectors
JP5889163B2 (ja) * 2012-11-02 2016-03-22 三菱電機株式会社 光起電力装置およびその製造方法、光起電力モジュール

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122488A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Semiconductor photo detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01287468A (ja) * 1988-05-16 1989-11-20 Fuji Xerox Co Ltd ランダム空間パターンの移動情報検出方法
JPH0614913U (ja) * 1992-07-22 1994-02-25 株式会社アイチコーポレーション 作業装置の作動変位検出装置

Also Published As

Publication number Publication date
JPS5952884A (ja) 1984-03-27

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