JPH0222472A - Device for feeding gas of liquid starting material for vapor growth - Google Patents
Device for feeding gas of liquid starting material for vapor growthInfo
- Publication number
- JPH0222472A JPH0222472A JP17286688A JP17286688A JPH0222472A JP H0222472 A JPH0222472 A JP H0222472A JP 17286688 A JP17286688 A JP 17286688A JP 17286688 A JP17286688 A JP 17286688A JP H0222472 A JPH0222472 A JP H0222472A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- amt
- tank
- liquid raw
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 title claims description 48
- 239000007858 starting material Substances 0.000 title abstract 3
- 239000007789 gas Substances 0.000 claims abstract description 38
- 239000012159 carrier gas Substances 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims description 63
- 230000008020 evaporation Effects 0.000 claims description 24
- 238000001704 evaporation Methods 0.000 claims description 24
- 238000001947 vapour-phase growth Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 abstract 5
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 description 14
- 238000004364 calculation method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010812 mixed waste Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/008—Feed or outlet control devices
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は気相成長用液体原料ガス供給装置、特に液体温
度液体残量１反応炉内圧力等の変動に対し原料ガスの蒸
発量が変化しない気相成長用液体原料ガス供給装置に関
する。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a liquid raw material gas supply device for vapor phase growth, in particular, a device for supplying liquid raw material gas for vapor phase growth, in particular, a device for supplying a liquid raw material gas for vapor phase growth, in particular, a device for supplying a liquid raw material gas for vapor phase growth. The present invention relates to a liquid raw material gas supply device for vapor phase growth that does not require the use of liquid gas.
従来、この種の気相成長用液体原料ガス供給装置は第２
図に示すように、キャリアガスの流量をマスフローメー
タ２１で測定し、設定値信号との差が無くなるように制
御回路２２で流量制御パルプ２３を調整し、一定温度に
保たれた液体原料バブラータンク２４にキャリアガスを
流し込み、液体原料２５をバブリングした後、蒸発ガス
とキャリアガスを反応炉内に導く装置である。Conventionally, this type of liquid raw material gas supply device for vapor phase growth
As shown in the figure, the flow rate of the carrier gas is measured by a mass flow meter 21, and the flow rate control pulp 23 is adjusted by the control circuit 22 so that there is no difference with the set value signal, and the liquid raw material bubbler tank is kept at a constant temperature. This is a device that flows a carrier gas into the reactor 24, bubbles the liquid raw material 25, and then introduces the evaporated gas and the carrier gas into the reactor.
この装置では原料ガスの蒸発量が原料ガスの飽和蒸気圧
とキャリアガス流量で決定される。しかしながら、バブ
ラータンク２４内の原料ガス残量が少くなると、バブラ
ータンク２４内の原料ガス蒸気圧が飽和蒸気圧に達せず
、キャリアガス流量を一定に制御するだけでは所定の蒸
発量が得られなくなる。また、飽和蒸気圧を制御するた
めに、原料ガス温度を極めて正確に制御する必要がある
。更に、本装置で反応炉内の圧力が原料の飽和蒸気圧よ
りら低く、その結果バブラータンク２４内の圧力も原料
の飽和蒸気圧よりも低い場合には、液体原料が沸騰し、
反応炉内に制御されることなく、大量の原料蒸気が流入
する０以上の様に第２図に示す装置には重大な欠陥が存
在する。In this device, the amount of evaporation of the source gas is determined by the saturated vapor pressure of the source gas and the flow rate of the carrier gas. However, when the remaining amount of the raw material gas in the bubbler tank 24 decreases, the vapor pressure of the raw material gas in the bubbler tank 24 does not reach the saturated vapor pressure, and a predetermined amount of evaporation cannot be obtained simply by controlling the carrier gas flow rate to be constant. . Furthermore, in order to control the saturated vapor pressure, it is necessary to control the raw material gas temperature extremely accurately. Furthermore, in this apparatus, if the pressure in the reactor is lower than the saturated vapor pressure of the raw material, and as a result, the pressure in the bubbler tank 24 is also lower than the saturated vapor pressure of the raw material, the liquid raw material will boil;
There is a serious defect in the apparatus shown in FIG. 2, such as the large amount of raw material vapor flowing into the reactor without control.
第３図に示す装置は第２図に示す装置の改良型である。The apparatus shown in FIG. 3 is an improved version of the apparatus shown in FIG.
この装置においては原料ガスの蒸発量はキャリアガスの
流量により制御される。すなわち、マスフローメータ３
１においてはキャリアガスの流量が測定される。またレ
シオディテクタ３２にキャリアガスと、混合カスか流れ
ると、それらの熱伝導率の差等に基づいて原料ガスの濃
度が検知される。これらの信号は演算回路３３に送られ
原料ガスの蒸発量か算出される。算出された蒸発量信号
は制御回路３４に送られ、設定値信号と比較され両者の
差異がなくなるまで、キャリアガスの流量を制御パルプ
３５で調整する０以上によう第３図の装置ではバブラー
タンク３６内の液体原料３７の残量によらず、蒸発量を
一定に制御することが可能となる。In this device, the amount of evaporation of the source gas is controlled by the flow rate of the carrier gas. That is, mass flow meter 3
1, the flow rate of carrier gas is measured. Further, when the carrier gas and the mixed waste flow through the ratio detector 32, the concentration of the raw material gas is detected based on the difference in thermal conductivity between them. These signals are sent to an arithmetic circuit 33 to calculate the amount of evaporation of the raw material gas. The calculated evaporation amount signal is sent to the control circuit 34 and compared with the set value signal, and the flow rate of the carrier gas is adjusted by the control pulp 35 until there is no difference between the two. It becomes possible to control the amount of evaporation to be constant regardless of the remaining amount of liquid raw material 37 in 36.
また、蒸発１の制御に飽和蒸気圧が重要な要素とはなら
ないため、液体原料の温度制御も高い精度を必要としな
い、しかし、反応炉内の圧力が液体原料の飽和蒸気圧よ
りも低く、バブラータンク３６内の圧力も液体原料より
も低い場合には第２図の装置の場合と同様に液体原料は
沸騰し、大量の原料蒸気が制御されることなく、反応炉
内に流入する１以上の様に第３図の装置にも重大な欠陥
が存在する。In addition, since the saturated vapor pressure is not an important factor in controlling evaporation 1, high accuracy is not required for controlling the temperature of the liquid raw material. However, if the pressure inside the reactor is lower than the saturated vapor pressure of the liquid raw material, If the pressure inside the bubbler tank 36 is also lower than that of the liquid raw material, the liquid raw material will boil as in the case of the apparatus shown in FIG. 2, and a large amount of raw material vapor will flow into the reactor without being controlled. As shown in FIG. 3, the device shown in FIG. 3 also has serious defects.
第４図はキャリアガスを用いない液体原料ガス供給装置
である。液体原料タンク４１と液体原料４２を加熱し、
液体原料の飽和蒸気圧を反応炉内の圧力に比べて数十〜
数百Ｔｏｒｒ高くなるようにしておく、その結果、原料
ガスはキャリアガス無で反応炉内に導入される。原料カ
スの蒸発量はマスフローメータ４３で流量として測定さ
れる。流量信号は制御回路４４へ送られ、設定値信号と
比較され、両者の差かなくなるように制御パルプ４５の
調整がなされる。この装置では蒸発量の制御に飽和蒸気
圧が重要な役割をはなさないため、液体原料の温度制御
はさほどの精度を必要としない。FIG. 4 shows a liquid source gas supply device that does not use carrier gas. heating the liquid raw material tank 41 and the liquid raw material 42;
Compared to the pressure inside the reactor, the saturated vapor pressure of the liquid raw material is several dozen to
The temperature is kept at a temperature of several hundred Torr, so that the raw material gas is introduced into the reactor without a carrier gas. The amount of evaporation of the raw material waste is measured as a flow rate using a mass flow meter 43. The flow rate signal is sent to the control circuit 44, compared with the set value signal, and the control pulp 45 is adjusted to eliminate the difference between the two. In this device, the saturated vapor pressure does not play an important role in controlling the amount of evaporation, so temperature control of the liquid raw material does not require much precision.
また、反応炉の圧力か飽和蒸気圧よりも低い場合でも蒸
発量制御が可能である。しかし、この装置では反応炉の
圧力が飽和蒸気圧よりも高い場合原料蒸気を反応炉内に
導入することは不可能である０以上の様に第４図の装置
にも重大な欠陥が存在することが判る。Furthermore, the amount of evaporation can be controlled even when the reactor pressure is lower than the saturated vapor pressure. However, with this device, it is impossible to introduce raw material vapor into the reactor when the reactor pressure is higher than the saturated vapor pressure. I understand that.
本発明の目的は前記課題を解決した気相成長用液体原料
ガス供給装置を提供することにある。An object of the present invention is to provide a liquid raw material gas supply device for vapor phase growth that solves the above problems.
上述した従来の気相成長用液体原料ガス供給装置に対し
、本発明は、バブラータンク内の原料ガス残量２反応炉
内の圧力によらず正確に原料の蒸発量を制御し、また液
体原料の温度制御にさほど高い精度を必要としないとい
う相違点を有する。In contrast to the above-mentioned conventional liquid raw material gas supply device for vapor phase growth, the present invention accurately controls the amount of raw material evaporated regardless of the amount of raw material gas remaining in the bubbler tank and the pressure in the reactor. The difference is that very high precision is not required for temperature control.
前記目的を達成するため、本発明は液体原料を蒸発させ
反応炉内に供給する気相成長用液体原料ガス供給装置に
おいて、バブラータンクへのキャリアガスの供給量を計
測するマスフローメータと、前記バブラータンクからの
混合ガスの供給量を計測するマスフローメータと、前記
両マスフローメータからの流量信号に基いて液体原料の
蒸発量を算出する演算回路と、前記演算回路からの蒸発
量信号を設定値信号と比較し、両信号値が牽、しくなる
まで、前記バブラータンクの混合ガス供給ラインに設け
た制御パルプの開度を調整する制御回路とを有するもの
である。In order to achieve the above object, the present invention provides a liquid raw material gas supply device for vapor phase growth that evaporates a liquid raw material and supplies it into a reactor, including a mass flow meter that measures the amount of carrier gas supplied to a bubbler tank, and a mass flow meter that measures the amount of carrier gas supplied to a bubbler tank; A mass flow meter that measures the amount of mixed gas supplied from the tank, an arithmetic circuit that calculates the evaporation amount of the liquid raw material based on the flow rate signals from both mass flow meters, and a set value signal that uses the evaporation amount signal from the arithmetic circuit. A control circuit is provided for adjusting the opening degree of the control pulp provided in the mixed gas supply line of the bubbler tank until both signal values become equal to each other.
以下、本発明の一実施例を図により説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を示す構成図である。FIG. 1 is a block diagram showing an embodiment of the present invention.
図において、本発明は液体原料バブラータンク１１のキ
ャリアガス供給ライン１１ａに、キャリアカスの供給量
を計測するマスフローメータ１２を設置し、液体原料バ
ブラータンク１１の混合ガス供給ライン１１ｂに、混合
ガスの供給量を計測するマスフローメータ１４を設置し
、さらに両マスフローメータ１２．１４からの流量信号
に基いて液体原料の蒸発量を算出する演算回路１５と、
演算回路１５がらの蒸発量信号を設定値信号と比較し、
両信号値が等しくなるまで、バブラータンク１１の混合
ガス供給ライン１１ｂに設けた制御パルプ１７の開度を
調整する制御回路１６とを装備したものである。In the figure, the present invention installs a mass flow meter 12 for measuring the supply amount of carrier scum in the carrier gas supply line 11a of the liquid raw material bubbler tank 11, and installs a mass flow meter 12 for measuring the supply amount of carrier scum in the carrier gas supply line 11a of the liquid raw material bubbler tank 11. A calculation circuit 15 is installed with a mass flow meter 14 that measures the supply amount, and further calculates the evaporation amount of the liquid raw material based on the flow rate signals from both mass flow meters 12.14.
Compare the evaporation amount signal from the calculation circuit 15 with the set value signal,
The system is equipped with a control circuit 16 that adjusts the opening degree of the control pulp 17 provided in the mixed gas supply line 11b of the bubbler tank 11 until both signal values become equal.
キャリアガスはバブラータンク１１のガス流入側に接続
されているマスフローメータ１２を通ってバブラータン
ク１１内に導かれ、液体原料１３を気化する。キャリア
カスと原料蒸気との混合ガスはバブラータンク１１の流
出側に接続されたマスフローメータ１４を通過する。流
入側のマスフローメータ１２と流出側のマスフローメー
タ１４の流量信号は演算回＃１１５に送られ、液体原料
の蒸発量が計算される。The carrier gas is guided into the bubbler tank 11 through a mass flow meter 12 connected to the gas inflow side of the bubbler tank 11, and vaporizes the liquid raw material 13. The mixed gas of carrier scum and raw material vapor passes through a mass flow meter 14 connected to the outflow side of the bubbler tank 11 . The flow rate signals of the mass flow meter 12 on the inflow side and the mass flow meter 14 on the outflow side are sent to calculation cycle #115, and the amount of evaporation of the liquid raw material is calculated.
液体原料の蒸発量Ｓは
５＝
（ＣｓＦｏ−２ＣｓＦ＋＋
ここて゛
Ｃｓ：？＆体原料のコンバージョンファクターｃ、ニー
ｔヤリアカスのコンバージョンファクターＦＩ １流入
側マスフローメータの見かけ上の流量Ｆｏ ：流出側マ
スフローメータの見かけ上の流量である。The evaporation amount S of the liquid raw material is 5 = (CsFo-2CsF++ where Cs: ? & conversion factor c of the liquid raw material, conversion factor FI of Nit Yaliakas 1 Apparent flow rate Fo of the inflow side mass flow meter: of the outflow side mass flow meter This is the apparent flow rate.
演算回路１５で計算された蒸発量信号は制御回路１６に
送られ、設定値信号と比較され、両者が等しくなるまで
制御パルプ１７を調整する０本実施例の装置では液体原
料の蒸発量そのものを制御するなめに、バブラータンク
１１の原料残量によらず、蒸発量を一定に制御すること
が可能である。また制御パラメータに液体原料の飽和蒸
気圧が直接関与しないため、液体原料の温度制御の精度
は高精度を必要としなかった。また本発明ではバブラー
タンク１１と反応炉の間に制御パルプ１７があるため、
液体原料の飽和蒸気圧よりも反応炉内の圧力が低い２
ＴＯｒｒの場合でも、また逆に高い５０Ｔｏｒｒの場合
でも一定の原料蒸発量を得ることが可能である。The evaporation amount signal calculated by the calculation circuit 15 is sent to the control circuit 16, where it is compared with the set value signal, and the control pulp 17 is adjusted until the two become equal. In order to control the amount of evaporation, it is possible to control the amount of evaporation to be constant regardless of the amount of raw material remaining in the bubbler tank 11. Furthermore, since the saturated vapor pressure of the liquid raw material is not directly involved in the control parameters, high accuracy in temperature control of the liquid raw material is not required. Furthermore, in the present invention, since the control pulp 17 is located between the bubbler tank 11 and the reactor,
The pressure inside the reactor is lower than the saturated vapor pressure of the liquid raw material2
It is possible to obtain a constant amount of raw material evaporation even in the case of TOrr or, conversely, even in the case of a high 50 Torr.
本実施例ではキャリアガスの圧力は１．５ ｋＱ／ｃＩ
！、液体原料はＴＥ０１を用い、原料温度は４５°Ｃに
設定した。このときのＴＥ０１の飽和蒸気圧はほぼ７
Ｔｏｒｒである０以上詳細に説明したように、本発明で
は原料ガス残存量変化、反応炉内の圧力変動、バブラー
タンク１１の温度変化が有っても蒸発量を一定に制御す
ることが可能である。In this example, the carrier gas pressure was 1.5 kQ/cI.
! TE01 was used as the liquid raw material, and the raw material temperature was set at 45°C. At this time, the saturated vapor pressure of TE01 is approximately 7
Torr is 0 or more As explained in detail, in the present invention, it is possible to control the evaporation amount to be constant even if there are changes in the remaining amount of raw material gas, pressure fluctuations in the reactor, and temperature changes in the bubbler tank 11. be.
本実施例では液体原料としてＴＥ０１を用いたが、本発
明はＴＭＢ、ＴＭＰ、ＴＭＯＰ、５ｉＣＱ、、ＰＯＣＱ
ｉ等の液体原料、有機金属等の液体原料、更にはＨＣＱ
、ＣＣＱ、等のエツチング用液体原料にも使用可能であ
ることは明らかである。In this example, TE01 was used as the liquid raw material, but in the present invention, TMB, TMP, TMOP, 5iCQ, POCQ
Liquid raw materials such as i, liquid raw materials such as organic metals, and even HCQ
It is clear that it can also be used as a liquid raw material for etching such as , CCQ, etc.
以上説明したように本発明の気相成長用液体原料ガス供
給装置によれば、液体原料ガス蒸発量を一定に制御でき
るため、気相成長装置反応炉内の反応条件変動防止に顕
著な効果を示し、その結果半導体製造中の気相成長工程
が安定に行われるようになり、半導体装置の歩留りを向
上できる効果がある。As explained above, according to the liquid raw material gas supply device for vapor phase growth of the present invention, the evaporation amount of the liquid raw material gas can be controlled to a constant level, so it has a remarkable effect on preventing fluctuations in reaction conditions in the reactor of the vapor phase growth apparatus. As a result, the vapor phase growth process during semiconductor manufacturing can be performed stably, which has the effect of improving the yield of semiconductor devices.
第１図は本発明の実施例を示す構成図、第２図。
第３図、第４図は従来例を示す構成図である。
１１・・・バブラータンク １２・・・マスフローメ
ータ１３・・・液体原料 １４・・・マスフロ
ーメータ１５・・・演算回路
１７・・・制御パルプ
１６・・・制御回路
第
図
第
図FIG. 1 is a configuration diagram showing an embodiment of the present invention, and FIG. FIGS. 3 and 4 are configuration diagrams showing a conventional example. 11... Bubbler tank 12... Mass flow meter 13... Liquid raw material 14... Mass flow meter 15... Arithmetic circuit 17... Control pulp 16... Control circuit diagram
Claims (1)
用液体原料ガス供給装置において、バブラータンクへの
キャリアガスの供給量を計測するマスフローメータと、
前記バブラータンクからの混合ガスの供給量を計測する
マスフローメータと、前記両マスフローメータからの流
量信号に基いて液体原料の蒸発量を算出する演算回路と
、前記演算回路からの蒸発量信号を設定値信号と比較し
、両信号値が等しくなるまで、前記バブラータンクの混
合ガス供給ラインに設けた制御パルプの開度を調整する
制御回路とを有することを特徴とする気相成長用液体原
料ガス供給装置。(1) In a liquid raw material gas supply device for vapor phase growth that evaporates the liquid raw material and supplies it into the reactor, a mass flow meter that measures the amount of carrier gas supplied to the bubbler tank;
A mass flow meter that measures the amount of mixed gas supplied from the bubbler tank, an arithmetic circuit that calculates the amount of evaporation of the liquid raw material based on the flow rate signals from both of the mass flow meters, and an evaporation amount signal from the arithmetic circuit that is set. A liquid raw material gas for vapor phase growth, characterized in that it has a control circuit that compares the value signal with the signal value and adjusts the opening degree of the control pulp provided in the mixed gas supply line of the bubbler tank until both signal values become equal. Feeding device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17286688A JPH0222472A (en) | 1988-07-12 | 1988-07-12 | Device for feeding gas of liquid starting material for vapor growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17286688A JPH0222472A (en) | 1988-07-12 | 1988-07-12 | Device for feeding gas of liquid starting material for vapor growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0222472A true JPH0222472A (en) | 1990-01-25 |
Family
ID=15949753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17286688A Pending JPH0222472A (en) | 1988-07-12 | 1988-07-12 | Device for feeding gas of liquid starting material for vapor growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0222472A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02268826A (en) * | 1989-04-10 | 1990-11-02 | Nippon Tairan Kk | Flow rate control device for evaporated gas |
| JPH05329357A (en) * | 1992-05-28 | 1993-12-14 | Shin Etsu Handotai Co Ltd | Gas supply device |
| US5431733A (en) * | 1992-06-29 | 1995-07-11 | Matsushita Electric Industrial Co., Ltd. | Low vapor-pressure material feeding apparatus |
| JP2013133542A (en) * | 2011-12-27 | 2013-07-08 | Horiba Stec Co Ltd | Sample solution evaporation system, diagnostic system, and diagnostic program |
| JP2014145115A (en) * | 2013-01-29 | 2014-08-14 | Tokyo Electron Ltd | Raw gas supply apparatus, film deposition apparatus, flow rate measuring method, and memory medium |
-
1988
- 1988-07-12 JP JP17286688A patent/JPH0222472A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02268826A (en) * | 1989-04-10 | 1990-11-02 | Nippon Tairan Kk | Flow rate control device for evaporated gas |
| JPH05329357A (en) * | 1992-05-28 | 1993-12-14 | Shin Etsu Handotai Co Ltd | Gas supply device |
| US5431733A (en) * | 1992-06-29 | 1995-07-11 | Matsushita Electric Industrial Co., Ltd. | Low vapor-pressure material feeding apparatus |
| JP2013133542A (en) * | 2011-12-27 | 2013-07-08 | Horiba Stec Co Ltd | Sample solution evaporation system, diagnostic system, and diagnostic program |
| JP2014145115A (en) * | 2013-01-29 | 2014-08-14 | Tokyo Electron Ltd | Raw gas supply apparatus, film deposition apparatus, flow rate measuring method, and memory medium |
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