JPH0222196A - 液相の結晶成長方法および装置 - Google Patents
液相の結晶成長方法および装置Info
- Publication number
- JPH0222196A JPH0222196A JP33311087A JP33311087A JPH0222196A JP H0222196 A JPH0222196 A JP H0222196A JP 33311087 A JP33311087 A JP 33311087A JP 33311087 A JP33311087 A JP 33311087A JP H0222196 A JPH0222196 A JP H0222196A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- melt
- slider
- temperature
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33311087A JPH0222196A (ja) | 1987-12-29 | 1987-12-29 | 液相の結晶成長方法および装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33311087A JPH0222196A (ja) | 1987-12-29 | 1987-12-29 | 液相の結晶成長方法および装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0222196A true JPH0222196A (ja) | 1990-01-25 |
| JPH0566916B2 JPH0566916B2 (cs) | 1993-09-22 |
Family
ID=18262394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33311087A Granted JPH0222196A (ja) | 1987-12-29 | 1987-12-29 | 液相の結晶成長方法および装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0222196A (cs) |
-
1987
- 1987-12-29 JP JP33311087A patent/JPH0222196A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0566916B2 (cs) | 1993-09-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |