JPH0221137B2 - - Google Patents
Info
- Publication number
- JPH0221137B2 JPH0221137B2 JP56213980A JP21398081A JPH0221137B2 JP H0221137 B2 JPH0221137 B2 JP H0221137B2 JP 56213980 A JP56213980 A JP 56213980A JP 21398081 A JP21398081 A JP 21398081A JP H0221137 B2 JPH0221137 B2 JP H0221137B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- dislocations
- amorphous region
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 241000293849 Cordylanthus Species 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21398081A JPS58114442A (ja) | 1981-12-26 | 1981-12-26 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21398081A JPS58114442A (ja) | 1981-12-26 | 1981-12-26 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114442A JPS58114442A (ja) | 1983-07-07 |
| JPH0221137B2 true JPH0221137B2 (US20100223739A1-20100909-C00025.png) | 1990-05-11 |
Family
ID=16648246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21398081A Granted JPS58114442A (ja) | 1981-12-26 | 1981-12-26 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114442A (US20100223739A1-20100909-C00025.png) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6083810A (en) * | 1993-11-15 | 2000-07-04 | Lucent Technologies | Integrated circuit fabrication process |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542671A (en) * | 1977-06-03 | 1979-01-10 | Ibm | Method of producing semiconductor |
-
1981
- 1981-12-26 JP JP21398081A patent/JPS58114442A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542671A (en) * | 1977-06-03 | 1979-01-10 | Ibm | Method of producing semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58114442A (ja) | 1983-07-07 |
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