JPH0220853Y2 - - Google Patents
Info
- Publication number
- JPH0220853Y2 JPH0220853Y2 JP4444983U JP4444983U JPH0220853Y2 JP H0220853 Y2 JPH0220853 Y2 JP H0220853Y2 JP 4444983 U JP4444983 U JP 4444983U JP 4444983 U JP4444983 U JP 4444983U JP H0220853 Y2 JPH0220853 Y2 JP H0220853Y2
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- receiving element
- emitting element
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000969 carrier Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 7
- 230000003321 amplification Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4444983U JPS59151460U (ja) | 1983-03-28 | 1983-03-28 | 発光受光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4444983U JPS59151460U (ja) | 1983-03-28 | 1983-03-28 | 発光受光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59151460U JPS59151460U (ja) | 1984-10-11 |
| JPH0220853Y2 true JPH0220853Y2 (ko) | 1990-06-06 |
Family
ID=30174979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4444983U Granted JPS59151460U (ja) | 1983-03-28 | 1983-03-28 | 発光受光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59151460U (ko) |
-
1983
- 1983-03-28 JP JP4444983U patent/JPS59151460U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59151460U (ja) | 1984-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6177352B1 (en) | Method for producing semiconductor bodies with an MOVPE layer sequence | |
| US4485391A (en) | Light emitting and receiving transistor for operation in alternate _sequence in an optical-fiber telecommunications systems | |
| TW571448B (en) | Light-emitting diode array | |
| JP2980435B2 (ja) | 半導体装置 | |
| JPH0997922A (ja) | 発光素子 | |
| JP2597975B2 (ja) | 半導体発光素子及びその製造方法 | |
| JPH07147428A (ja) | 発光ダイオードおよび発光ダイオードアレイ | |
| JPH0669532A (ja) | 半導体集積装置 | |
| JPH07176788A (ja) | 発光ダイオード | |
| JPH0220853Y2 (ko) | ||
| JPS61125092A (ja) | 半導体発光ダイオ−ド | |
| JPS6320128Y2 (ko) | ||
| JPH09172198A (ja) | 発光ダイオードおよびその製造方法 | |
| JPS6248079A (ja) | 半導体受光素子 | |
| JPS63119282A (ja) | 半導体発光素子構造物 | |
| JPS61139082A (ja) | 半導体発光装置 | |
| JP2000021296A (ja) | 半導体光電陰極 | |
| JP2000021295A (ja) | 半導体光電陰極 | |
| KR940003437B1 (ko) | 표면방출형 발광다이오드 | |
| JPS6146080A (ja) | 半導体受光装置 | |
| JP2003031842A (ja) | 半導体発光素子 | |
| JPH08204228A (ja) | 面発光型点光源発光ダイオード | |
| JPS5948966A (ja) | 面発光型発光ダイオ−ド | |
| JPS5871669A (ja) | 面発光型発光ダイオ−ド | |
| JPH05198838A (ja) | 小発光点発光ダイオード |