JPH02207539A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02207539A JPH02207539A JP1028394A JP2839489A JPH02207539A JP H02207539 A JPH02207539 A JP H02207539A JP 1028394 A JP1028394 A JP 1028394A JP 2839489 A JP2839489 A JP 2839489A JP H02207539 A JPH02207539 A JP H02207539A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- particles
- semiconductor element
- semiconductor device
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 229910000679 solder Inorganic materials 0.000 claims abstract description 72
- 239000002245 particle Substances 0.000 claims abstract description 55
- 239000010949 copper Substances 0.000 claims abstract description 34
- 239000002923 metal particle Substances 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- 239000012790 adhesive layer Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000002470 thermal conductor Substances 0.000 claims description 2
- 238000002844 melting Methods 0.000 abstract description 12
- 230000008018 melting Effects 0.000 abstract description 12
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229910052718 tin Inorganic materials 0.000 abstract description 2
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 229910020220 Pb—Sn Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
不発８Ａは、半導体素子か支持板等の被固着部に半田層
を介して固着された構造を有する半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] Misfire 8A relates to a semiconductor device having a structure in which a semiconductor element is fixed to a fixed part such as a support plate through a solder layer.
電力用半導体装置の多くは、半導体素子が放熱板金兼ね
る支持板に半田で固着された構造を有する。この半田は
、後の製造工程における加熱や動作時の発熱によって接
着強度等が変化しないことが望ましく、一般にｐｂ （
鉛）を多く含有する半田が使用されている。この半田は
湾融温度が３００℃以上と比較的高い牛田即ち高融点半
田であり、パワーサイクル耐量等が良好に得ら才りると
いう利点を有する。Many power semiconductor devices have a structure in which a semiconductor element is soldered to a support plate that also serves as a heat dissipation plate. It is desirable that the adhesive strength of this solder does not change due to heating in the subsequent manufacturing process or heat generated during operation, and generally PB (
Solder containing a large amount of lead) is used. This solder is a high melting point solder with a relatively high melting temperature of 300° C. or higher, and has the advantage of good power cycle durability.
〔発明が屏決しよ５とする課題〕
しかしながら、上記の高融点半田の主成分であるｌ−ｂ
は熱伝導率が［Ｊ、３５ ｗ／ｃｍｄｅｇと小さい。こ
のため、これらＰｂ２多く含有する高融点半田を半導体
素子の固着に使用すると、半導体素子からの発熱か半田
層を介して支持板へと良好に熱伝導されず、放熱性が良
好に得られない。[Problem to be solved by the invention 5] However, l-b, which is the main component of the above-mentioned high melting point solder,
has a low thermal conductivity of [J, 35 w/cmdeg. For this reason, when these high melting point solders containing a large amount of Pb2 are used for fixing semiconductor elements, the heat generated from the semiconductor elements is not well conducted to the support plate through the solder layer, and good heat dissipation performance cannot be obtained. .
そこで、本発明の目的は、熱伝導性に優れた半田層を有
する半導体装置を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a semiconductor device having a solder layer with excellent thermal conductivity.
〔課題を解決するための手段］
上記目的を達成するための発明は、半導体素子が導電性
接着層により″ｃ被固着部に固着されている半導体装置
ｖｃおいて、前記導電性接着層が、鉛（Ｐｂ）を主成分
とする半田に、前記導電性接着層の厚みよジも小さい粒
径を有する銅ＣＣｕ）、銀（Ａｇ）及びアルミニウム（
ＡＩ Ｊの内の少なくとも１種の金属粒子が混在したも
のであることを特徴とする半導体装置に係わるものであ
る。[Means for Solving the Problems] The invention for achieving the above object is, in a semiconductor device vc in which a semiconductor element is fixed to a fixed part "c" by a conductive adhesive layer, the conductive adhesive layer: Copper (CCu), silver (Ag) and aluminum (CCu), silver (Ag) and aluminum (CCu), which have a small particle size and a thickness of the conductive adhesive layer, are added to the solder whose main component is lead (Pb).
The present invention relates to a semiconductor device characterized by a mixture of metal particles of at least one type of AIJ.
上記発明にあ・いて、半田は鉛を９０重ｉ％以上含有す
るものであることが望ましく、また、金属粒子を半田に
対して［Ｊ、５〜２ｏ重蓋％添加することが望ましい。In the above invention, the solder preferably contains 90% by weight or more of lead, and it is also desirable to add metal particles to the solder in an amount of [J, 5 to 20% by weight].
上記目的全達成するための別の発明は、半田にこの半田
よりも熱伝導率の大きい熱良導体粒子が混在している接
着層によって半導体素子が被固着部に固着されており、
且つ前記熱良導体粒子は前記半田よシも熱伝導率が大き
い金属粒子を前記半田に溶融しにくい金属又は前記金属
粒子よりも酸化しにくい金属の屡で被覆したものである
ことを特徴とする半導体装置に係わるものである。Another invention for achieving all of the above objects is that a semiconductor element is fixed to a part to be fixed by an adhesive layer in which solder is mixed with thermally conductive particles having a higher thermal conductivity than the solder,
The semiconductor is characterized in that the thermally conductive particles are metal particles that have a high thermal conductivity as well as the solder and are coated with a metal that is difficult to melt into the solder or a metal that is more difficult to oxidize than the metal particles. It is related to equipment.
請求項１に記載の発明において、Ｃｕ ％ Ａｇ ｓ
ＡＩは半田よりも熱伝導率が十分に大きい。従って、半
導体素子と被固着部との間の層の熱抵抗が小さくなり、
放熱性の良い半導体装置を提供することができる。特に
、Ｃｕは牛田ＶＣ溶は込み難いので、半田の組成変化が
少なく、半田の接着作用の低下が少ない。In the invention according to claim 1, Cu % Ag s
AI has a sufficiently higher thermal conductivity than solder. Therefore, the thermal resistance of the layer between the semiconductor element and the fixed part is reduced,
A semiconductor device with good heat dissipation can be provided. In particular, since Cu is difficult to incorporate into the Ushida VC melt, there is little change in the composition of the solder, and there is little deterioration in the adhesive action of the solder.
請求項２に記載のよ５に鉛を９０重ｆ％以上含有する半
田を使用し、金属粒子を０．５〜２０重量るの範囲で含
めるようにすれば、接着性と熱伝導性との両方を良好に
満足さセることが可能になる。If solder containing 90% by weight or more of lead is used as described in claim 2, and metal particles are included in the range of 0.5 to 20% by weight, the adhesiveness and thermal conductivity can be improved. It will be possible to satisfy both.
請求項３に従って、金属粒子を半田に溶融しにぐい金属
の膜で被覆すれば、金属粒子が半田に溶融して半田の組
成が変化することを確実に防止できる。金属の膜が金属
粒子より酸化しにぐい金属から成る場合は、金属粒子の
表面が酸化して半田との接着性、熱伝導性及び電気伝導
性が低下することが起こり難くなるので、半田固着の作
業や半田の品質管理が容易になるとともに、半田層の熱
伝導性及び電気伝導性が良好になり且つこれ等の特性が
安定に保たｎる。According to claim 3, if the metal particles are coated with a metal film that is difficult to melt into the solder, it is possible to reliably prevent the metal particles from melting into the solder and changing the composition of the solder. When the metal film is made of a metal that is more resistant to oxidation than the metal particles, the surface of the metal particles is less likely to oxidize and deteriorate adhesion with solder, thermal conductivity, and electrical conductivity, so solder adhesion is reduced. work and quality control of the solder become easier, the thermal conductivity and electrical conductivity of the solder layer become better, and these properties are kept stable.
〔第１の実施例〕
以下、本発明の第１の実施例に係わる半導体装置を第１
図全参照して説明する。[First Embodiment] Hereinafter, a semiconductor device according to a first embodiment of the present invention will be described as a first embodiment.
This will be explained with reference to all the figures.
本実施例の半導体装置は、第１図に示すように放熱板を
兼ねる金属製支持板１の一方の主面に、半導体素子２が
接着層６を介して固着された構造を有する。接着層６は
、半田４の中に銅粉木部ち銅（Ｃｕ）粒子５を混在させ
たものから成る。As shown in FIG. 1, the semiconductor device of this embodiment has a structure in which a semiconductor element 2 is fixed to one main surface of a metal support plate 1 which also serves as a heat sink via an adhesive layer 6. The adhesive layer 6 is made of solder 4 mixed with copper powder, wood, and copper (Cu) particles 5.
この半導体装置を製造する際には、Ｐｂ（鉛）：Ｓｎ
（錫）＝９５ ： ５の高融点半田を含むペースト状半
田（クリーム手出）ｌＣ接着層３の厚さよりも小さい粒
径（直径）約ＩＱＡｍのＣｕ粒子を約２重量％混入した
ペーストを支持板１上に印刷し、このペースト層の上に
半導体素子２を載置して熱処理（す７ｏ−）し、半導体
素子２を支持板１上に固着する。When manufacturing this semiconductor device, Pb (lead):Sn
(Tin)=95: Paste-like solder containing high melting point solder of 5 (cream handmade) Supports a paste mixed with about 2% by weight of Cu particles having a particle size (diameter) of about IQAm smaller than the thickness of the IC adhesive layer 3 The paste layer is printed on the plate 1, and the semiconductor element 2 is placed on this paste layer and heat treated (step 7o-) to fix the semiconductor element 2 on the support plate 1.
接着層３の厚さは約６０μｍであフ、半田４に対するＣ
ｕ粒子５０割合は約２重量％である。Ｃｕ粒子５は半田
４の中にほぼ均一に分散している。The thickness of the adhesive layer 3 is approximately 60 μm, and the thickness of the adhesive layer 3 is approximately 60 μm.
The u particle 50 proportion is approximately 2% by weight. The Cu particles 5 are almost uniformly dispersed in the solder 4.
なお、このＣｕ粒子５の表面ｌＣハ牛田との合金化層が
形成されている。Note that an alloyed layer with IC and Ushida is formed on the surface of the Cu particles 5.
本実施例は次の効果を有する。This embodiment has the following effects.
（１１ＣｕはＰｂ −Ｓｎ系の半田に溶融しにぐい今風
であり、溶融温度が半田に比べて十分に高いから半田を
加熱して溶融したとき、Ｃｕ粒子５が溶は工手出の組成
が変わることはほとんどない。従って、Ｃｕ粒子５を含
有させたことにより半田の溶融温度や粘性が変わること
はほとんどなく、従来のＰｂ＝Ｓｎ＝９５：５の半田の
溶融温度（３１４℃〕のままであり、従来と同様に容易
且つ確実に半導体素子２の半田付けを達成することかで
きる。(11Cu is difficult to melt into Pb-Sn solder, and its melting temperature is sufficiently higher than that of solder, so when the solder is heated and melted, the Cu particles 5 are melted. Therefore, the melting temperature and viscosity of the solder hardly change due to the inclusion of Cu particles 5, and the melting temperature of the conventional Pb=Sn=95:5 solder (314°C) remains the same. Therefore, it is possible to easily and reliably solder the semiconductor element 2 as in the conventional method.
１２１ Ｃｕは半田が良好に付着する金属であるから
、Ｃｕ粒子５は溶融した半田に良好に混在し、Ｃ０粒子
５を混合したことによる接着強度の実質的な低下は生じ
ない。Since 121 Cu is a metal to which solder adheres well, the Cu particles 5 mix well with the molten solder, and the adhesion strength does not substantially decrease due to the mixing of the C0 particles 5.
＋３１ Ｃｕ粒子５は半田４よりも熱伝導率が大きい
ので、Ｃｕ粒子５が熱伝導路として機能し、接着層３の
熱抵抗が半田のみの場合よりも小さくなり、放熱性の良
好な半導体装置を提供することができる。+31 Since the Cu particles 5 have higher thermal conductivity than the solder 4, the Cu particles 5 function as a heat conduction path, and the thermal resistance of the adhesive layer 3 is smaller than that of the solder alone, resulting in a semiconductor device with good heat dissipation. can be provided.
〔第２の実施例〕
次に、本発明の第２の実施例に係わる半導体装置を第２
因を参照して以下に説明する。[Second Embodiment] Next, the semiconductor device according to the second embodiment of the present invention will be described in a second embodiment.
This will be explained below with reference to the causes.
第２図の半導体装置は、第１図の半導体装置と同様に放
熱板金兼ねる支持板１の一方の主面に接着層ろを介して
半導体素子２が固着されている。In the semiconductor device shown in FIG. 2, like the semiconductor device shown in FIG. 1, a semiconductor element 2 is fixed to one main surface of a support plate 1 which also serves as a heat dissipation plate via an adhesive layer.
接着層６は半田４と熱良導体粒子６とρ・ら成る。The adhesive layer 6 consists of solder 4, thermally conductive particles 6, and ρ.
熱良導体粒子６はＣｕ粒子６ａの表面にＮｉにッケル〕
被膜６ｂを設けたものである。Ｃｕ粒子６ａは第１図の
Ｃ０粒子５と同一のものであり、約１゜μｍの粒径を有
する。Ｎｉ被膜６ｂは極めて薄い層であるので、これを
設けた後の熱良導体粒子６の粒径はＣｕ粒子６ａの粒径
と大差ない。なお、半田４の組成比はＰｂ ： ５ｎ＝
９５ ： ５であり、また、熱良導体粒子６の半田４に
対する割合は、約２重蓋カである。The thermally conductive particles 6 are coated with Ni on the surface of the Cu particles 6a]
A coating 6b is provided. The Cu particles 6a are the same as the C0 particles 5 in FIG. 1, and have a particle size of about 1.mu.m. Since the Ni coating 6b is an extremely thin layer, the particle size of the thermally conductive particles 6 after it is provided is not much different from the particle size of the Cu particles 6a. The composition ratio of solder 4 is Pb:5n=
95:5, and the ratio of thermally conductive particles 6 to solder 4 is about double.
半導体素子２０手半田付は、第１の実施例と同様に半田
ペーストに熱良導体粒子６を混入したペーストを支持板
１上に印刷し、リフＯ−ｊることによって行う。The 20-hand soldering of the semiconductor elements is carried out by printing a paste prepared by mixing solder paste with particles 6 of good thermal conductivity on the support plate 1, and performing a refrigeration process in the same manner as in the first embodiment.
ＮｉはＣｕよジもＰｂ −Ｓｎ系半田に溶は込みにぐい
金属であるから、第２の実施例の熱良導体粒子６は、第
１の実施例のＣｕ粒子５よりも半田に対する溶は込みが
少ない。従って、熱良導体粒子６を混入しても半田の組
成が実質的に変化セず、半田の溶融温度も殆んど変化し
ないし、パワーサイクル耐量等が低下しない。Since Ni is a metal that is more difficult to penetrate into Pb-Sn solder than Cu, the thermally conductive particles 6 of the second embodiment have a higher melt penetration into the solder than the Cu particles 5 of the first embodiment. Less is. Therefore, even if the thermally conductive particles 6 are mixed, the composition of the solder does not substantially change, the melting temperature of the solder hardly changes, and the power cycle durability etc. do not decrease.
また、ＮｉはＣｕと同様に半田に良好に付着する金属で
あるから、熱良導体粒子６は半田４ｖｃ良好に混在する
。Further, like Cu, Ni is a metal that adheres well to solder, so the thermally conductive particles 6 are mixed well with the solder 4vc.
また、Ｎｉはｅｕよジも酸化し難い金属であるから、取
扱いが容易である。即ち、酸化に関してさほど注意を払
わなくてもよい。Ｃｕ粒子６ａのみの場合Ｖｃｒｒｉ、
表面酸化によって熱伝導性及び電気伝導性の低下を招く
恐れがあるが、Ｎｉ″ａ膜６ｂ全６ｂることによってこ
のような恐れがなくなる。Further, since Ni is a metal that is difficult to oxidize like EU, it is easy to handle. That is, it is not necessary to pay much attention to oxidation. In the case of only Cu particles 6a, Vcrri,
Although surface oxidation may cause a decrease in thermal conductivity and electrical conductivity, this fear is eliminated by forming the entire Ni''a film 6b.
〔変形例〕
本発明は上述の実施例に限定されるものでなく、例えば
次の変形が可能なものである。[Modifications] The present invention is not limited to the above-described embodiments, and the following modifications are possible, for example.
（ＩＩ Ｃｕ粒子５及び熱良導体粒子６を多く含有さ
セればそれだけ接着層６の熱抵抗は減少するが、Ｃｕ粒
子５又は熱良導体粒子乙の含有量が多過ぎると、半田の
粘性、接着強度等が低下し、逆に含有量が少な過ぎると
熱電導性が十分に得られない。(II) The more Cu particles 5 and thermally conductive particles 6 are contained, the more the thermal resistance of the adhesive layer 6 is reduced. However, if the content of Cu particles 5 or thermally conductive particles 6 is too large, the viscosity of the solder and the adhesion decrease. Strength etc. will decrease, and if the content is too low, sufficient thermal conductivity will not be obtained.
従って、 Ｃｕ粒子５又は熱良導体粒子６の半田４に対
する割合は、０．５〜２ＯＮ量るであることが望ましく
、１〜１０重童鴨であることが更に望まし１、）。Therefore, the ratio of Cu particles 5 or thermally conductive particles 6 to solder 4 is preferably 0.5 to 2 ON, more preferably 1 to 10 ON (1).
（２） 本発明はＰｂの含有率が９０％以上の半田に
有効であるが、Ｐｂの含有率がもつと小さく溶融温度が
さほど高くない半田にも有効である。(2) The present invention is effective for solder with a Pb content of 90% or more, but is also effective for solder with a small Pb content and a not so high melting temperature.
＋３１ Ｃｕ粒子５又は熱良導体粒子６は粒径が比較
的大きい方が取り扱い易いので、粒径（直径）を接着層
乙の厚みの１／１０以上にするのが良い。+31 Cu particles 5 or thermally conductive particles 6 are easier to handle if they have a relatively large particle size, so the particle size (diameter) is preferably 1/10 or more of the thickness of the adhesive layer B.
（４） 第１図のＣｕ粒子５及び第２図のＣｕ粒子６
ａの代すに、銀（Ａｇ）粒子又はアルミニウム（Ａ１）
粒子を使用することができる。しかし、Ｎｉ等の被膜６
ｂを設けない場合には、Ｐｂ −Ｓｎ系半田に対してＡ
ｇはＣｕよジも溶融し易いので、Ｃｕの方が望ましい。(4) Cu particles 5 in Fig. 1 and Cu particles 6 in Fig. 2
Instead of a, silver (Ag) particles or aluminum (A1)
Particles can be used. However, the coating 6 such as Ni
If b is not provided, A for Pb-Sn solder
As g, Cu is more easily melted than Cu.
但し、Ｓｂ （アンチモン）を含む半田はＣｕとｓｂが
金属間化合物を形成するので、この場合は金属粉末とし
てＡｇを使用するのが良い。However, in solder containing Sb (antimony), Cu and sb form an intermetallic compound, so in this case it is better to use Ag as the metal powder.
（５）回路基板上の導体上に半導体素子を半田付けする
場合にも本発明を適用することができる。(5) The present invention can also be applied to the case of soldering a semiconductor element onto a conductor on a circuit board.
（６） 支持板土の溶融した半田に半導体素子をこ丁
ジ付けて固着してもよい。(6) Semiconductor elements may be firmly attached to the molten solder of the support plate.
以上のように、本発明によれば、放熱性が良好であり且
つ信頼性の高い半導体装置を容易に提供することができ
る。As described above, according to the present invention, a semiconductor device with good heat dissipation and high reliability can be easily provided.
第１図は本発明の第１の実施例の半導体装置の一部を概
略的に示す断面図、
第２図は本発明の第２の実施例の半導体装置の一部を概
略的に示す断面図である。
１・・・支持板、２・・・半導体素子、３・・・接着層
、４・・・半田、５・・・Ｃｕ粒子、６・・・熱良導体
粒子、６ａ・・・Ｃ１粒子、６ｂ・・・Ｎｉ被膜。FIG. 1 is a cross-sectional view schematically showing a part of a semiconductor device according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view schematically showing a part of a semiconductor device according to a second embodiment of the present invention. It is a diagram. DESCRIPTION OF SYMBOLS 1... Support plate, 2... Semiconductor element, 3... Adhesive layer, 4... Solder, 5... Cu particle, 6... Good thermal conductor particle, 6a... C1 particle, 6b ...Ni film.
Claims (1)
着されている半導体装置において、前記導電性接着層が
、鉛（Ｐｂ）を主成分とする半田に、前記導電性接着層
の厚みよりも小さい粒径を有する銅（Ｃｕ）、銀（Ａｇ
）及びアルミニウム（Ａｌ）の内の少なくとも１種の金
属粒子が混在したものであることを特徴とする半導体装
置。 〔２〕前記半田は鉛を９０重量％以上含有する半田であ
り、前記金属粒子は前記半田に０．５〜２０重量％含有
していることを特徴とする請求項１記載の半導体装置。 〔３〕半田にこの半田よりも熱伝導率の大きい熱良導体
粒子が混在している接着層によつて半導体素子が被固着
部に固着されており、且つ前記熱良導体粒子は前記半田
よりも熱伝導率が大きい金属粒子を前記半田に溶融しに
くい金属又は前記金属粒子よりも酸化しにくい金属の膜
で被覆したものであることを特徴とする半導体装置。[Scope of Claims] [1] In a semiconductor device in which a semiconductor element is fixed to a part to be fixed by a conductive adhesive layer, the conductive adhesive layer is made of solder containing lead (Pb) as a main component, Copper (Cu), silver (Ag) having a particle size smaller than the thickness of the conductive adhesive layer
) and aluminum (Al). [2] The semiconductor device according to claim 1, wherein the solder is solder containing 90% by weight or more of lead, and the metal particles are contained in the solder in an amount of 0.5 to 20% by weight. [3] The semiconductor element is fixed to the bonded part by an adhesive layer in which the solder contains particles of a good thermal conductivity that have a higher thermal conductivity than the solder, and the good thermal conductor particles have a higher thermal conductivity than the solder. A semiconductor device characterized in that metal particles having high conductivity are coated with a film of a metal that is difficult to melt into the solder or a metal that is more difficult to oxidize than the metal particles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1028394A JPH02207539A (en) | 1989-02-07 | 1989-02-07 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1028394A JPH02207539A (en) | 1989-02-07 | 1989-02-07 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02207539A true JPH02207539A (en) | 1990-08-17 |
Family
ID=12247444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1028394A Pending JPH02207539A (en) | 1989-02-07 | 1989-02-07 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02207539A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06216167A (en) * | 1993-01-20 | 1994-08-05 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| WO2001072466A3 (en) * | 2000-03-24 | 2002-01-31 | Motorola Inc | Anti-scavenging solders for silver metallization and method |
| WO2002081143A1 (en) * | 2001-04-04 | 2002-10-17 | Motorola, Inc. | Anti-scavenging solders for silver metallization |
| JP2005026702A (en) * | 2000-06-12 | 2005-01-27 | Hitachi Ltd | Electronic apparatus, semiconductor device and semiconductor module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4951872A (en) * | 1972-06-13 | 1974-05-20 | ||
| JPS54134656A (en) * | 1978-04-11 | 1979-10-19 | Sumitomo Electric Ind Ltd | Picture image transforming element |
| JPS59217335A (en) * | 1983-05-25 | 1984-12-07 | Toshiba Corp | Semiconductor device |
-
1989
- 1989-02-07 JP JP1028394A patent/JPH02207539A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4951872A (en) * | 1972-06-13 | 1974-05-20 | ||
| JPS54134656A (en) * | 1978-04-11 | 1979-10-19 | Sumitomo Electric Ind Ltd | Picture image transforming element |
| JPS59217335A (en) * | 1983-05-25 | 1984-12-07 | Toshiba Corp | Semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06216167A (en) * | 1993-01-20 | 1994-08-05 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| WO2001072466A3 (en) * | 2000-03-24 | 2002-01-31 | Motorola Inc | Anti-scavenging solders for silver metallization and method |
| JP2005026702A (en) * | 2000-06-12 | 2005-01-27 | Hitachi Ltd | Electronic apparatus, semiconductor device and semiconductor module |
| KR100724030B1 (en) * | 2000-06-12 | 2007-06-04 | 가부시키가이샤 히타치세이사쿠쇼 | Semiconductor module |
| WO2002081143A1 (en) * | 2001-04-04 | 2002-10-17 | Motorola, Inc. | Anti-scavenging solders for silver metallization |
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