JPH02203437A - Optical information recording, reproducing and erasing member - Google Patents

Optical information recording, reproducing and erasing member

Info

Publication number
JPH02203437A
JPH02203437A JP1022861A JP2286189A JPH02203437A JP H02203437 A JPH02203437 A JP H02203437A JP 1022861 A JP1022861 A JP 1022861A JP 2286189 A JP2286189 A JP 2286189A JP H02203437 A JPH02203437 A JP H02203437A
Authority
JP
Japan
Prior art keywords
recording
thin film
film
reproducing
optical information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1022861A
Other languages
Japanese (ja)
Inventor
Takeo Ota
太田 威夫
Masami Uchida
内田 正美
Kazuo Inoue
和夫 井上
Shigeaki Furukawa
惠昭 古川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1022861A priority Critical patent/JPH02203437A/en
Publication of JPH02203437A publication Critical patent/JPH02203437A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain the member which is stable in cycle characteristic by selecting the combination of the film thicknesses of a dielectric material and thin recording film which increase in the absorption of laser light with an increase in the film thickness of the thin recording film layer in the constitution consisting of the dielectric layer of the rear surface and thin recording film layer and the dielectric layer of the front surface. CONSTITUTION:The crystallized film is irradiated with laser light and is thereby heated to the m. p. thereof or above. This part is then melted and is rapidly cooled, by which the part is converted to an amorphous state and a mark 8 is formed. The increase of the film thickness of the thin recording film 3 is generated in the parts before and after the mark 8 and the light absorbing sensitivity of the part 10 where the film thickness is increased changes. The respective combinations of the dielectric materials 2, 4 and the thin recording film 3 which increase in sensitivity with an increase in the film thickness are, therefore, previously selected. The recording marks are formed stably with cycles in this way.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はレーザービーム等により、情報を高密度、大容
量で記録再生、及び消去できる光学情報記録再生消去部
材に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical information recording/reproducing/erasing member capable of recording, reproducing, and erasing information with high density and large capacity using a laser beam or the like.

従来の技術 光デイスクメモリに関しては、TeとTe02を主成分
とするTeaX (0<x<2.0)薄膜を用いた追記
型のディスクがある。さらに、レーザ光により薄膜を加
熱し、溶融し、急冷することにより、非晶質化し情報番
記録しまたこれを加熱し、徐冷することにより結晶化し
、消去することができる材料としては、S、R,0vs
hinsky  (ニス・アール・オプシンスキー)氏
等のカルコゲン材料G e B T e a + S 
b 2 S 2等が知られている。また、As2 S8
やAs、Se8あるいは5b2Se。
Regarding conventional optical disk memories, there is a write-once type disk using a TeaX (0<x<2.0) thin film whose main components are Te and Te02. Furthermore, by heating a thin film with a laser beam, melting it, and rapidly cooling it, it becomes amorphous and records an information number, and by heating and slowly cooling it, it crystallizes and erases it.S ,R,0vs
Chalcogen material G e B T e a + S by Mr. Hinsky (Nis R. Opsinsky) et al.
b 2 S 2 and the like are known. Also, As2 S8
or As, Se8 or 5b2Se.

等カルコゲン元素と周期律表第V族あるいはGe等の第
V族元素等の組み合せからなる薄膜等が広く知られてい
る。レーザ光で情報を記録、消去する方法は、一般に、
あらかじめ薄膜を結晶化させておき、これに〜φ1μm
に絞ったレーザ光を情報に対応させて強度変調を施し、
例えば、円盤状の記録ディスクを回転せしめて照射し、
このレーザ光照射部位は、薄膜の融点以上に昇温し、か
つ急冷し、非晶質化したマークとして情報の記録がおこ
なえる。この情報を消去するに際してはディスクの回転
トラック方向に長いスポット光を照射することにより、
薄膜を加熱昇温させ、長いスポット光による徐冷効果に
よって再び結晶化させる方法が知られている。
Thin films made of a combination of an isochalcogenic element and a group V element of the periodic table or a group V element such as Ge are widely known. Generally, the method of recording and erasing information using laser light is
A thin film is crystallized in advance, and this is ~φ1 μm.
Intensity modulation is applied to the focused laser beam to correspond to the information.
For example, by rotating a disk-shaped recording disk and irradiating it,
The area irradiated with the laser beam is heated to a temperature higher than the melting point of the thin film and then rapidly cooled, so that information can be recorded as an amorphous mark. When erasing this information, a long spot light is irradiated in the direction of the rotation track of the disk.
A method is known in which a thin film is heated to an elevated temperature and re-crystallized by the slow cooling effect of a long spotlight.

′発明が解決しようとする課題 薄膜を加熱昇温し、溶融象、冷非晶質化および加熱昇温
結晶化の手段を用いる情報記録および消去可能な記録媒
体における第一の課題は加熱サイクルに対応して信号品
質が変動することである。特に、ビットエラー特性の変
動は課題である。この変動要因としては、記録スポット
光および消去スポット光による400℃以上の急速な加
熱、冷却の多数回のくりかえし刺激による基板材質の熱
的。
'Problem to be Solved by the Invention The first problem with information recording and erasable recording media that uses means of heating a thin film to raise its temperature, melting it, turning it into a cold amorphous state, and heating it up to crystallize it is the heating cycle. There is a corresponding variation in signal quality. In particular, fluctuations in bit error characteristics are a problem. The cause of this variation is the thermal effect of the substrate material due to repeated stimulation of rapid heating and cooling of 400°C or more by the recording spot light and the erasing spot light.

機械的な損傷がある。記録薄膜については、融点以上の
加熱において、溶融による体積膨張および、その構成元
素によっては、薄膜構成材料の蒸気圧が上昇し、構成成
分の蒸発、流動により、組成。
There is mechanical damage. When a recording thin film is heated above its melting point, its volume expands due to melting, and depending on its constituent elements, the vapor pressure of the thin film's constituent materials increases, and the composition changes due to evaporation and flow of the constituent components.

成分の移動による膜厚変化が発生する場合もある。Changes in film thickness may occur due to movement of components.

基板あるいは記録膜が以上のような変化を生じた場合、
記録再生、消去のサイクルにおいて、感度低下、ノイズ
の増大を生じる、あるいは記録マークのビット落ちが発
生する。サイクル特性の劣化が発生するという課題があ
った。
If the substrate or recording film undergoes any of the above changes,
During the recording, reproducing, and erasing cycles, sensitivity decreases, noise increases, or bits of recorded marks are dropped. There was a problem that deterioration of cycle characteristics occurred.

本発明の目的はサイクル特性の安定な部材を提供するこ
とである。
An object of the present invention is to provide a member with stable cycle characteristics.

課題を解決するための手段 本発明は、レーザ光等の照射により熱的に薄膜の状態を
変化させて情報を記録および消去する部材において、下
面の誘電体層と記録薄膜層と、上面の誘電体層からなる
構成で、記録薄膜層の膜厚の増加に対してレーザ光の吸
収が増大する誘電体、記録薄膜の膜厚の組み合せを選ぶ
ことを特徴とする光学情報記録再生消去部材を提供する
ものである。
Means for Solving the Problems The present invention provides a member for recording and erasing information by thermally changing the state of a thin film by irradiation with a laser beam or the like. Provided is an optical information recording/reproducing/erasing member which has a structure consisting of a body layer and is characterized by selecting a combination of a dielectric material and a recording thin film thickness such that absorption of laser light increases as the thickness of the recording thin film layer increases. It is something to do.

作用 Teを含む非晶質膜は、その融点は代表的なもので40
0℃から900℃と広い温度範囲にある。
The melting point of an amorphous film containing active Te is typically 40
It has a wide temperature range from 0℃ to 900℃.

これらの膜にレーザ光を照射し、昇温徐冷することによ
り結晶化が行える。この温度は、−船釣に融点より低い
結晶化温度領域である。また、この結晶化した膜に高い
パワーレベルのレーザ光をあて、その融点以上に加熱す
ると、その部分は溶融し急冷し、再び非晶質化し、マー
クが形成できる。
Crystallization can be performed by irradiating these films with laser light and gradually increasing the temperature and cooling. This temperature is in the crystallization temperature range below the melting point. Furthermore, when this crystallized film is irradiated with a laser beam of a high power level and heated above its melting point, that part melts, rapidly cools, becomes amorphous again, and marks can be formed.

この時、記録薄膜の溶融、蒸発などにより、記録マーク
部において、わずかに記録薄膜物質の移動が発生する場
合がある。物質が移動した場合、マークの前部あるいは
、後部において、記録薄膜の膜厚の増加が発生する。こ
のため、この膜厚の増加した部分の光吸収感度が変化す
る。この部分の感度が低下すると、次にこの部分へマー
クを記録する場合この部分にマークが形成できなくなる
At this time, due to melting, evaporation, etc. of the recording thin film, slight movement of the recording thin film material may occur in the recording mark portion. When the substance moves, the thickness of the recording thin film increases at the front or rear of the mark. Therefore, the light absorption sensitivity of the increased film thickness changes. If the sensitivity of this part decreases, it will no longer be possible to form a mark in this part when recording a mark next time.

本願発明において、膜厚の増加に対して、感度が増大す
る誘電体および記録薄膜のそれぞれの組み合せを選んで
おくことにより、記録マークをサイクルに対して安定に
形成することが可能になる。
In the present invention, by selecting a combination of a dielectric material and a recording thin film whose sensitivity increases with respect to an increase in film thickness, recording marks can be formed stably over cycles.

前の信号でマークの部分は次の信号でマークが重なる場
合既にマークが記録されているため、膜厚が薄くなるこ
との影響を受けることはない、オーバライドの方式にお
いて特に、効果的である。
This is particularly effective in the override method, where a mark in the previous signal overlaps with the mark in the next signal because the mark has already been recorded, so it is not affected by the thinning of the film.

実施例 以下本発明の一実施例について、図面を用いて、詳細に
説明する。
EXAMPLE Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

記録層である薄膜を形成する基板としては、あらかじめ
、レーザ光案内用の溝あるいは、ピット例を形成したポ
リカーボネイト等の樹脂基板あるいは、ガラス板を用い
る。
As the substrate on which the thin film serving as the recording layer is formed, a resin substrate such as polycarbonate or a glass plate is used, on which grooves or pits for guiding laser light are formed in advance.

記録部材の構成は、第1図に示すように、1゜基板、2
.下層誘電体、3.記録膜、4.上N誘電体、51反射
層、および6.接着保護層、からなる。
The configuration of the recording member is as shown in FIG.
.. lower layer dielectric; 3. recording film, 4. upper N dielectric, 51 reflective layer, and 6. consisting of an adhesive protective layer.

基板の表面にあらかじめ耐熱性のすぐれたZnSあるい
は5i02等の第一の無機誘電体層を形成しておく、こ
の誘電体層としては5IO2を15モル%以上含ませた
ZnS誘電体層が好ましい6例えば、5i02を20%
含ませたものでは、屈折率はn −2,0になる。この
上に、Te−Ge−5bからなる合金薄膜を形成する。
A first inorganic dielectric layer such as ZnS or 5i02 having excellent heat resistance is formed on the surface of the substrate in advance. This dielectric layer is preferably a ZnS dielectric layer containing 15 mol% or more of 5IO2. For example, 5i02 by 20%
When it is included, the refractive index becomes n-2.0. On top of this, a thin alloy film made of Te-Ge-5b is formed.

さらにこの記録薄膜層の上に第二の無機誘電体層を設け
ることにより耐熱性の向上をはかることができる。
Furthermore, heat resistance can be improved by providing a second inorganic dielectric layer on this recording thin film layer.

薄膜形成の方法としては、真空蒸着あるいは、スパンタ
法が使用できる。第二の無機誘電体層の上に反射層を設
けることにより、感度の向上をはかることもできる。
As a method for forming a thin film, vacuum evaporation or a spunter method can be used. Sensitivity can also be improved by providing a reflective layer on the second inorganic dielectric layer.

130■のディスクとして、1800rpm回転でfl
−3,43MI(z(7)信号と、f2=1.0MHz
の信号のオーバーライド特性を測定する。オーバーライ
ドは、1ケのサークルスポット1mのレーザ光により、
高いパワーレベル14mW、低いパワーレベル6mWの
パワーレベル間の変調で、高いパワーレベルで非晶質化
マークを形成し、低いパワーレベルで非晶質化マークを
結晶化して消去する同時消録の方法である。
As a 130■ disk, fl rotates at 1800 rpm.
-3,43MI (z(7) signal and f2=1.0MHz
Measure the override characteristics of the signal. Override is done by laser beam with 1 circle spot 1m.
Simultaneous erasure method of forming an amorphous mark at a high power level and crystallizing and erasing the amorphous mark at a low power level by modulating between a high power level of 14 mW and a low power level of 6 mW. It is.

第2図に、オーバライドしたトラックの記録マークを示
す、それぞれ、7.記録トラック、8.非晶質化記録マ
ーク、9.結晶化消去部、10.記録膜の膜厚増加部で
ある。
FIG. 2 shows recording marks of overridden tracks, respectively. Recording track, 8. Amorphous recording mark, 9. Crystallization erasure section, 10. This is the thickened portion of the recording film.

記録部材の光学悪魔(光吸収感度A)は、構成する材料
の光学定数(屈折率n、消衰係数k)および、それぞれ
の膜厚dで定めることができる。特に、上層および下層
誘電体の(n、に、dl、d2)、そして記録薄膜の非
晶質状態の(nl、kl、d釦、結晶状態の(n2.に
2.d3)および反射層の(n、に、d4)が重要であ
る。
The optical characteristic (light absorption sensitivity A) of a recording member can be determined by the optical constants (refractive index n, extinction coefficient k) of the constituent materials and the respective film thicknesses d. In particular, the upper and lower dielectric layers (n, ni, dl, d2), the recording thin film in the amorphous state (nl, kl, d buttons, the crystalline state (n2., 2.d3), and the reflective layer) (n, to, d4) is important.

第3図(a)、 (b)に記録膜の膜厚と光吸収感度A
の関係を示す、(a)の場合は、記録膜の膜厚増加によ
り、光吸収感度Aが低下する例を示す、ら)の場合は、
記録膜の膜厚増加により、光吸収感度が増大する例を示
す。
Figures 3(a) and (b) show the recording film thickness and light absorption sensitivity A.
In case (a), the light absorption sensitivity A decreases due to an increase in the thickness of the recording film; in case (a),
An example will be shown in which light absorption sensitivity increases as the thickness of the recording film increases.

これらの光吸収感度の傾きは、誘電体層の膜厚構成、お
よび、記録膜の膜厚領域などで変化する。
The slope of these light absorption sensitivities varies depending on the thickness structure of the dielectric layer, the thickness region of the recording film, and the like.

第2図に示すように、非晶質マークを形成した場合、そ
のマークの前部あるいは、後部にわずかに膜厚の増加部
が発生する。記録部材の構成を第3図(b)に選ぶこと
により、この部分に次の信号マークを形成することが可
能になる。
As shown in FIG. 2, when an amorphous mark is formed, a slight increase in film thickness occurs at the front or rear part of the mark. By selecting the configuration of the recording member as shown in FIG. 3(b), it becomes possible to form the next signal mark in this portion.

発明の効果 以上の構成により、記録薄膜の物質移動による感度変化
に対して、記録感度の低下を阻止でき、ピットエラー特
性のサイクル特性が向上する。
Effects of the Invention With the configuration described above, it is possible to prevent a decrease in recording sensitivity against changes in sensitivity due to mass transfer of the recording thin film, and improve cycle characteristics of pit error characteristics.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は記録部材の構成図、第2図はオーバライドした
トラックの説明図、第3図(a)は記録膜の膜厚と光吸
収感度((IJIきが負の場合)の関係図、第3図(ロ
)は記録膜の膜厚と光吸収感度(傾きが正の場合)の関
係図である。 1・・・・・・基板、2・・・・・・下層誘電体、3・
・・・・・記録膜、4・・・・・・上層誘電体、5・・
・・・・反射層、6・・・・・・接着保護層。 代理人の氏名 弁理士 粟野重孝 はが1名第 第 図 図 を1討電体 烙 図 記 録 囮 (d3) 記 課 FjN(d3)
FIG. 1 is a configuration diagram of the recording member, FIG. 2 is an explanatory diagram of overridden tracks, and FIG. 3(a) is a relationship between recording film thickness and light absorption sensitivity ((when IJI is negative). Figure 3 (b) is a diagram showing the relationship between the film thickness of the recording film and the light absorption sensitivity (when the slope is positive). 1...Substrate, 2...Lower dielectric, 3・
...Recording film, 4...Upper layer dielectric, 5...
... Reflective layer, 6... Adhesive protective layer. Name of agent: Patent attorney Shigetaka Awano 1 person, 1 figure, 1 figure, 1 record of electronic data (d3) Recording FjN (d3)

Claims (6)

【特許請求の範囲】[Claims] (1)レーザー光の照射により、そのエネルギーを吸収
して昇温し、溶融し、急冷し、アモルファス化する性質
とアモルファスの状態を昇温することにより、結晶化す
る性質を有する記録薄膜を用い、前記レーザー光の強度
変調により情報を記録する部材において前記記録薄膜層
の上面および下面に透明誘電体層を有する構成で、記録
薄膜層の膜厚の増加に対してレーザ光の吸収が増大する
、誘電体、記録薄膜の膜厚の組み合せを選ぶことを特徴
とする光学情報記録再生消去部材。
(1) Using a recording thin film that has the property of absorbing the energy of laser light, heating up, melting, rapidly cooling, and becoming amorphous, and the property of crystallizing an amorphous state by heating it. , the member for recording information by intensity modulation of the laser beam has a transparent dielectric layer on the upper and lower surfaces of the recording thin film layer, and absorption of the laser beam increases as the thickness of the recording thin film layer increases. , an optical information recording/reproducing/erasing member characterized by selecting a combination of film thicknesses of a dielectric material and a recording thin film.
(2)記録薄膜が結晶状態において、その膜厚の増加に
対してレーザ光の吸収が増大するように、誘電体、記録
薄膜の膜厚の組み合わせを選ぶことを特徴とする請求項
(1)記載の光学情報記録再生消去部材。
(2) Claim (1) characterized in that the combination of the film thicknesses of the dielectric material and the recording thin film is selected such that when the recording thin film is in a crystalline state, the absorption of laser light increases as the film thickness increases. The optical information recording/reproducing/erasing member described above.
(3)記録薄膜層の膜厚が800Å以下のであることを
特徴とする請求項(1)記載の光学情報記録再生消去部
材。
(3) The optical information recording/reproducing/erasing member according to claim (1), wherein the recording thin film layer has a thickness of 800 Å or less.
(4)耐熱層としてSiO_2を含ませてなるZnSを
もちいることを特徴とする請求項(1)記載の光学情報
記録再生消去部材。
(4) The optical information recording/reproducing/erasing member according to claim (1), wherein ZnS containing SiO_2 is used as the heat-resistant layer.
(5)記録薄膜層としてTe、Ge、Sbからなる材料
を用いることを特徴とする請求項(1)記載の光学情報
記録再生消去部材。
(5) The optical information recording/reproducing/erasing member according to claim (1), wherein a material consisting of Te, Ge, and Sb is used for the recording thin film layer.
(6)記録あるいは、消去のレーザ光の波長を、記録薄
膜の膜厚増加に対して、その吸収が増大するように選ぶ
ことを特徴とする請求項(1)記載の光学情報記録再生
消去部材。
(6) The optical information recording/reproducing/erasing member according to claim (1), wherein the wavelength of the laser beam for recording or erasing is selected so that its absorption increases as the thickness of the recording thin film increases. .
JP1022861A 1989-02-01 1989-02-01 Optical information recording, reproducing and erasing member Pending JPH02203437A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1022861A JPH02203437A (en) 1989-02-01 1989-02-01 Optical information recording, reproducing and erasing member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1022861A JPH02203437A (en) 1989-02-01 1989-02-01 Optical information recording, reproducing and erasing member

Publications (1)

Publication Number Publication Date
JPH02203437A true JPH02203437A (en) 1990-08-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
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