JPH02196004A - Formation of oxide superconducting film - Google Patents
Formation of oxide superconducting filmInfo
- Publication number
- JPH02196004A JPH02196004A JP1013119A JP1311989A JPH02196004A JP H02196004 A JPH02196004 A JP H02196004A JP 1013119 A JP1013119 A JP 1013119A JP 1311989 A JP1311989 A JP 1311989A JP H02196004 A JPH02196004 A JP H02196004A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- oxide superconducting
- formula
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000010408 film Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000001953 recrystallisation Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- -1 5rTiO Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
酸化物超伝導膜の作製方法に関し、
格子定数や熱膨張率の異なる基板上に良質の酸化物超伝
導薄膜を作製する方法を提供することを目的とし、
基板上に下地酸化物超伝導薄膜を形成し、エネルギービ
ームで再結晶化処理した上に、酸化物超伝導薄膜をエピ
タキシャル成長するように構成する。[Detailed Description of the Invention] [Summary] Regarding a method for producing an oxide superconducting film, the present invention aims to provide a method for producing a high quality oxide superconducting thin film on substrates having different lattice constants and coefficients of thermal expansion. , A base oxide superconducting thin film is formed on a substrate, recrystallized with an energy beam, and then an oxide superconducting thin film is epitaxially grown.
本発明は酸化物超伝導膜の作製方法、とりわけシリコン
やアルミナなどの基板上に良質の酸化物超伝導膜を作製
する方法に関する。The present invention relates to a method for producing an oxide superconducting film, and particularly to a method for producing a high-quality oxide superconducting film on a substrate such as silicon or alumina.
近年、高温超伝導膜の電子デバイスへの応用が活発に研
究されている。高温超伝導膜の作製方法としては蒸着法
、スパッタ法、ＣＶＤ法、印刷焼付法などの各種の方法
について、出発原料の選択から成膜条件、成膜後のアニ
ール条件までいろいろ研究されているが、下地基材とし
てはＭｇＯ。In recent years, the application of high-temperature superconducting films to electronic devices has been actively researched. Various methods for producing high-temperature superconducting films, such as vapor deposition, sputtering, CVD, and printing/baking methods, have been studied, from the selection of starting materials to film formation conditions and annealing conditions after film formation. , MgO as the underlying base material.
５ｒＴｉＯ，、サファイヤ、イツトリム安定化ジルコニ
ア（ＹＳ２）の各単結晶など限られたものだけが良質の
酸化物超伝導膜を与えるものとして用いられている。Only a limited number of single crystals such as 5rTiO, sapphire, and yttrium stabilized zirconia (YS2) are used to provide good quality oxide superconducting films.
また、Ｂｉ系やＴｅ系の酸化物超伝導材では上記のよう
な基板上でもエピタキシャル成長膜は作製されていない
。Furthermore, no epitaxially grown film has been produced using Bi-based or Te-based oxide superconducting materials even on the above-mentioned substrates.
従来の方法では、シリコンやアルミナの基板を用いた場
合、基板と超伝導材の格子定数や熱膨張係数の違いによ
り、また構成元素の相互拡散のために、欠陥やマイクロ
クラックの多い多結晶質の膜しか得られていない。In conventional methods, when silicon or alumina substrates are used, polycrystalline materials with many defects and microcracks are produced due to differences in lattice constant and thermal expansion coefficient between the substrate and superconducting material, and due to mutual diffusion of constituent elements. Only 100% of the film has been obtained.
また、上記の如く、Ｂｉ系やＴｅ系の酸化物超伝導材で
は、ＭｇＯ等の基板上でもエピタキシャル成長超伝導膜
は作製されていない。Further, as described above, an epitaxially grown superconducting film has not been produced using a Bi-based or Te-based oxide superconducting material even on a substrate such as MgO.
そこで、本発明は、シリコンやアルミナなどのように格
子定数や熱膨張率の異なる基板上にも良質の酸化物超伝
導膜を作製することを目的とする。Therefore, an object of the present invention is to produce a high-quality oxide superconducting film even on substrates having different lattice constants and coefficients of thermal expansion, such as silicon and alumina.
上記目的を達成するために、本発明は、基板上に酸化物
超伝導材又はこれに近い組成の下地薄膜を形成し、この
下地薄膜をエネルギービームで再結晶化した後、その上
に酸化物超伝導膜をエピタキシャル成長することを特徴
とする酸化物超伝導膜の作製方法を提供する。In order to achieve the above object, the present invention forms a base thin film of an oxide superconducting material or a composition similar to this on a substrate, recrystallizes this base thin film with an energy beam, and then forms an oxide superconductor on top of the base thin film. A method for producing an oxide superconducting film is provided, which comprises epitaxially growing the superconducting film.
本発明の酸化物超伝導膜はシリコンやアルミナなどの半
導体装置の分野において広く用いられる基板材料上に作
製することを目的としているが、基板の材質、特に格子
定数や熱膨張率には限定されない。Although the oxide superconducting film of the present invention is intended to be fabricated on a substrate material such as silicon or alumina that is widely used in the field of semiconductor devices, it is not limited to the material of the substrate, especially the lattice constant and coefficient of thermal expansion. .
本発明では、基板上に先ず酸化物超伝導材をエピタキシ
ャル成長するための下地薄膜を形成する。In the present invention, first, a base thin film for epitaxially growing an oxide superconducting material is formed on a substrate.
この下地薄膜は、酸化物超伝導膜を形成し、再結晶化処
理を行なうことによって形成する。再結晶化、特にレー
ザービームや電子ビームのエネルギービームによる再結
晶化を行なうことによって、その上に形成する酸化物超
伝導膜と格子定数や熱膨張率の違いのないバッファー層
が形成される。This base thin film is formed by forming an oxide superconducting film and performing a recrystallization process. By performing recrystallization, particularly recrystallization using an energy beam such as a laser beam or an electron beam, a buffer layer is formed that has no difference in lattice constant or thermal expansion coefficient from the oxide superconducting film formed thereon.
このバッファー層は平坦性が向上し、また密度も向上し
て拡散も少ない。従って、このバッファー層上では酸化
物超伝導膜がエピタキシャル成長することができる。こ
のように下地薄膜はその上に形成する酸化物超伝導膜と
同じ組成であることが望ましいが、必ずしも同じ組成で
なくてもよい。This buffer layer has improved flatness, improved density, and less diffusion. Therefore, an oxide superconducting film can be epitaxially grown on this buffer layer. As described above, it is desirable that the base thin film has the same composition as the oxide superconducting film formed thereon, but it does not necessarily have to have the same composition.
例えば、ＢａＣｕＯ□とＹの混合物からなる薄膜でも工
下地薄膜の厚みはバッファー層として機能する膜が得ら
れるに足りる厚みがあればよいが、−船釣には５００〜
４０００人程度の厚みが採用される。下地薄膜の形成方
法は限定されないが、蒸着法、スパッタ法が簡便である
。For example, even with a thin film made of a mixture of BaCuO
Approximately 4,000 people will be hired. The method for forming the base thin film is not limited, but vapor deposition and sputtering are convenient.
下地薄膜の再結晶化は、上記の如く、レーザービーム、
電子ビームなどのエネルギービームによる溶融、急冷に
よる。Recrystallization of the underlying thin film is performed using a laser beam,
By melting and rapid cooling using energy beams such as electron beams.
エネルギービームで再結晶化した下地薄膜上には目的と
する酸化物超伝導材をエピタキシャル成長することがで
きる。エピタキシャル成長を行なうには、スパッタ法、
ＣＶＤ法などが優れているが、蒸着法なども利用できる
。The desired oxide superconducting material can be epitaxially grown on the underlying thin film recrystallized by the energy beam. To perform epitaxial growth, sputtering method,
CVD methods are better, but vapor deposition methods can also be used.
本発明が適用できる酸化物超伝導材は限定されないが、
少なくとも下地のものについては、いずれでも有効であ
る。The oxide superconducting material to which the present invention can be applied is not limited, but
Either method is effective, at least for the base material.
＋） （Ｌａ＋−、ＩＭｗ）２ＣｕＯ，（Ｍ＝Ｂａ、
Ｓｒ、 Ｃａ）ｉｉ） ＬｎＢａ２Ｃｕ３０ｔ−ａ
（Ｌｎ−希土類及びＹ；Ｃｅ、 Ｐｒ、 Ｔｂを除
く。）
７７１） （ＢｉＯ）２Ｓｒ２Ｃａｎ−＋０□−＋ｚ
（ｎ＝１〜３）Ｂｙ） （Ｔｅｎ）２Ｂａ
２Ｃａｒ、−１Ｃｕ、、Ｏｚｎ＋２（ｎ＝１〜３）（Ｔ
ｅＯ）Ｂａ２Ｃａｎ−ｔｃｕｒ、０．ｒ、＋２（ｎ＝１
〜５）〔作 用〕
下地が薄膜として酸化物超伝導材又はこれに近い組成の
薄膜を用い、かつこれをエネルギービームを用いて再結
晶化処理することによって、再結晶化した酸化物超伝導
材からなる下地が得られ、この下地超伝導薄膜は格子定
数が目的とする超伝導膜と一致し、その上に酸化物超伝
導材をエピタキシャル成長するには十分な薄質を有する
。+) (La+-, IMw)2CuO, (M=Ba,
Sr, Ca) ii) LnBa2Cu30t-a
(Ln- rare earth and Y; excluding Ce, Pr, and Tb.) 771) (BiO)2Sr2Can-+0□-+z
(n=1~3)By) (Ten)2Ba
2Car, -1Cu, , Ozn+2 (n=1~3) (T
eO) Ba2Can-tcur, 0. r, +2 (n=1
~5) [Function] By using an oxide superconducting material or a thin film with a composition similar to this as a thin film, and recrystallizing this using an energy beam, a recrystallized oxide superconductor is formed. This superconducting thin film has a lattice constant that matches that of the target superconducting film, and is thin enough to epitaxially grow an oxide superconducting material thereon.
〔実施例〕 図面を参照して実施例について説明する。〔Example〕 Examples will be described with reference to the drawings.
この実施例では、基板としてシリコン基板１の表面を酸
化して５ｉｎ２膜２を形成したものを用いる。In this embodiment, a silicon substrate 1 whose surface is oxidized to form a 5in2 film 2 is used as the substrate.
この基板１上にＢｉ２Ｓｒ、Ｃａ２Ｃｕ、０．膜３をス
パッタ法で２０００人堆積する。この堆積時に基板加熱
（７００℃）するか、又は堆積後アニール（８５０℃、
１時間〉して結晶化する。こうして得られるＢｉｚＳｒ
ｚＣａ２ＣｕｓＯ。On this substrate 1, Bi2Sr, Ca2Cu, 0. 2000 layers of film 3 are deposited by sputtering. Either the substrate is heated (700°C) during this deposition, or the post-deposition annealing (850°C,
1 hour> to crystallize. BizSr obtained in this way
zCa2CusO.
膜３は多結晶質である。Membrane 3 is polycrystalline.
〔第１図（ａ）〕
次いで、この多結晶質Ｂ＋２Ｓｒ２Ｃａ２Ｃｕ３Ｌ膜３
にエキシマレーザ−ビーム（λ＝１９３ｎｍ、パワー１
ｍＪ／ｃｒｌ）を照射して溶融再結晶化する。再結晶化
して得られる膜４は密度が高く、平坦であるが、超伝導
特性（臨界温度、臨界電流）は未だ十分ではない。〔第
１図（ｂ）〕
しかし、この再結晶化膜４上に再びＢ１２５ｒｚｃａｚ
ｃｕ、［）。[FIG. 1(a)] Next, this polycrystalline B+2Sr2Ca2Cu3L film 3
Excimer laser beam (λ = 193 nm, power 1
mJ/crl) for melt recrystallization. Although the film 4 obtained by recrystallization has a high density and is flat, its superconducting properties (critical temperature, critical current) are still insufficient. [FIG. 1(b)] However, B125rzcaz was deposited on this recrystallized film 4 again.
cu, [).
を基板加熱７５０℃でスパッタすると、Ｂｉ２５ｒ２Ｃ
ａ、Ｃｕ、Ｅｌ、ｌ超伝導膜５がエピタキシャル成長す
る。図中、６は拡散領域である。When sputtered with substrate heating at 750℃, Bi25r2C
A, Cu, El, I superconducting film 5 is epitaxially grown. In the figure, 6 is a diffusion region.
こうして得られるＢｉ２５ｒ２Ｃａ、Ｃｕ３０ｘ膜５は
結晶粒径数１０−に及び、臨界温度８７に１臨界電流数
１０万Ａ ／ ｃｉの良好な超伝導特性を示す。なお、
Ｍ ｇ Ｏ単結晶基板上にＢ＋ｚＳｒａＣａ２Ｃｕ３０
．Ｉをスパッタ成膜しアニールした超伝導膜は結晶粒径
１−程度で、臨界温度８７に、臨界電流数１０００Ａ／
ｃｔｌである。The Bi25r2Ca, Cu30x film 5 thus obtained has a crystal grain size of several 10 -, and exhibits good superconductivity with a critical temperature of 87 and a critical current of 100,000 A/ci. In addition,
B+zSraCa2Cu30 on M g O single crystal substrate
．． The superconducting film formed by sputtering I and annealing has a crystal grain size of about 1, a critical temperature of 87, and a critical current of 1000 A/.
ctl.
本発明によれば、基板の制約なしで良好な酸化物超伝導
を作製することが可能である。According to the present invention, it is possible to produce good oxide superconductivity without restrictions on the substrate.
第１図は実施例の超伝導膜の作製方法の主要工程を示す
模式断面図である。
■・・・シリコン基板、 ２・・・５１０２膜、３．
４・・・下地Ｂｉ。５ｒ２Ｃａ２Ｃｕ、ＯＮ薄膜、５
・−・ｘビ成長Ｂｉ２Ｓｒ、［’ａ、Ｃｕ３０＋を膜。FIG. 1 is a schematic cross-sectional view showing the main steps of a method for manufacturing a superconducting film according to an example. ■...Silicon substrate, 2...5102 film, 3.
4...Base Bi. 5r2Ca2Cu, ON thin film, 5
・-・x-grown Bi2Sr, ['a, Cu30+ film.
Claims (1)
薄膜を形成し、該下地薄膜をエネルギービームで再結晶
化処理した後、その上に酸化物超伝導膜をエピタキシャ
ル成長することを特徴とする酸化物超伝導膜の作製方法
。1. A thin base film of an oxide superconducting material or a composition similar to this is formed on a substrate, and after recrystallizing the base thin film with an energy beam, an oxide superconducting film is epitaxially grown thereon. A method for producing an oxide superconducting film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1013119A JPH02196004A (en) | 1989-01-24 | 1989-01-24 | Formation of oxide superconducting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1013119A JPH02196004A (en) | 1989-01-24 | 1989-01-24 | Formation of oxide superconducting film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02196004A true JPH02196004A (en) | 1990-08-02 |
Family
ID=11824270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1013119A Pending JPH02196004A (en) | 1989-01-24 | 1989-01-24 | Formation of oxide superconducting film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02196004A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0350195A (en) * | 1989-07-19 | 1991-03-04 | Mitsubishi Materials Corp | Single crystal wafer material for forming superconducting ceramic thin film for production of semiconductor element |
| JP2006096577A (en) * | 2004-09-28 | 2006-04-13 | Tokyo Institute Of Technology | Metal oxide film, method for producing the same, and formed article |
-
1989
- 1989-01-24 JP JP1013119A patent/JPH02196004A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0350195A (en) * | 1989-07-19 | 1991-03-04 | Mitsubishi Materials Corp | Single crystal wafer material for forming superconducting ceramic thin film for production of semiconductor element |
| JP2006096577A (en) * | 2004-09-28 | 2006-04-13 | Tokyo Institute Of Technology | Metal oxide film, method for producing the same, and formed article |
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