JPH02194619A - Aligner - Google Patents
AlignerInfo
- Publication number
- JPH02194619A JPH02194619A JP1467789A JP1467789A JPH02194619A JP H02194619 A JPH02194619 A JP H02194619A JP 1467789 A JP1467789 A JP 1467789A JP 1467789 A JP1467789 A JP 1467789A JP H02194619 A JPH02194619 A JP H02194619A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- light
- dust
- periphery
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 23
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000428 dust Substances 0.000 abstract description 23
- 230000007246 mechanism Effects 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 238000007599 discharging Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 53
- 238000000034 method Methods 0.000 description 10
- 238000005187 foaming Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、露光装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to an exposure apparatus.
（従来の技術）
一般に、半導体製造］−程においては、半導体ウェハ表
面にフォトレジスト膜を形成し、このフォトレジスト膜
に精密写真転写技術により、マスクの微細な回路パター
ンを転写する露光工程がある。(Prior art) In general, in the semiconductor manufacturing process, there is an exposure process in which a photoresist film is formed on the surface of a semiconductor wafer, and a fine circuit pattern of a mask is transferred to this photoresist film using precision phototransfer technology. .
上記半導体ウェハ表面にフォトレジスト膜を形成する場
合、一般に上記半導体ウェハ中央部分にフォトレジスト
液を滴下し、半導体ウェハを高速回転させながら遠心力
により全面に拡散させるスピンナー法によってフォトレ
ジスト液を塗布し、フォトレジスト膜を形成している。When forming a photoresist film on the surface of the semiconductor wafer, generally the photoresist solution is dropped onto the center of the semiconductor wafer and applied using a spinner method in which the semiconductor wafer is rotated at high speed and spread over the entire surface by centrifugal force. , forming a photoresist film.
ところで、スピンナー法によってフォトレジスト膜を形
成すると、半導体ウェハの周縁部に膜厚の厚い部分が形
成されてしまう。このような半導体ウェハ周縁部のフォ
トレジスト液は、例えば半導体ウェハの搬送中に機械的
に破壊されたりしてごみとして飛散する可能性があるの
で、クリーンルームの塵の数が多斌に増加し全工程にお
ける半導体チップの収率に影響する。従って、このよう
な部分を予め除去しておくことが望ましい。By the way, when a photoresist film is formed by a spinner method, a thick portion is formed at the peripheral edge of a semiconductor wafer. The photoresist solution on the periphery of the semiconductor wafer may be mechanically destroyed during transportation of the semiconductor wafer, for example, and may be scattered as dust, resulting in a large increase in the number of dust in the clean room and Affects the yield of semiconductor chips in the process. Therefore, it is desirable to remove such portions in advance.
このような半導体ウェハ周縁部のフォトレジスト膜を除
去する装置としては、例えば特開昭５８−１５９５３５
号、特開昭５９−１３８３３５号、特開昭５９−１５８
５２０号、特開昭６１−７３３３０号公報等に、半導体
ウェハを回転させながら半導体ウェハの周縁部に光源か
らの光を照射する装置が開示されている。An example of an apparatus for removing such a photoresist film on the peripheral edge of a semiconductor wafer is disclosed in Japanese Patent Application Laid-Open No. 58-159535.
No., JP-A-59-138335, JP-A-59-158
No. 520, Japanese Unexamined Patent Publication No. 61-73330, and the like disclose devices that irradiate light from a light source onto the peripheral portion of a semiconductor wafer while rotating the semiconductor wafer.
（発明が解決しようとする課Ｍ）
しかしながら上記従来の技術では、ウェハ周縁部に光を
照射した際に、この光が照射された部分のレジストから
発泡し、この発泡によりダストが発生して上記ウェハ表
面に付着する。即ち、強い光をレジストに照射すると、
レジスト内部から発生した気体がレジスト表面を突き破
って蒸発するため、これにより発泡し、ダストが飛び散
る。すると、ウェハ表面にダストが付着した部分が、ウ
ェハの現像処理の際に現像残りとなり１歩留まりを悪化
させる問題があった。(Problem M to be solved by the invention) However, in the above-mentioned conventional technology, when light is irradiated to the periphery of the wafer, foaming occurs from the resist in the area irradiated with the light, and this foaming generates dust. Adheres to the wafer surface. In other words, when the resist is irradiated with strong light,
Gas generated from inside the resist penetrates the resist surface and evaporates, causing foaming and scattering of dust. In this case, there is a problem in that the portion of the wafer surface to which dust is attached remains undeveloped during the wafer development process, which deteriorates the yield.
本発明は上記点に対処してなされたもので、被処理体表
面にダストが付着することを抑止し、これにより歩留ま
りの低下をなくすことを可能とした露光装置を提供しよ
うとするものである。The present invention has been made in response to the above-mentioned problems, and aims to provide an exposure apparatus that can prevent dust from adhering to the surface of a workpiece, thereby eliminating a decrease in yield. .
（課題を解決するための手段）
本発明は、被処理体の周縁部に光を照射して上記周縁部
を露光する装置において、上記被処理体の周縁部を露光
する手段と、上記被処理体周縁の少なくとも光照射部の
雰囲気を排出する手段を備えたことを特徴とする露光装
置を得るものである。(Means for Solving the Problems) The present invention provides an apparatus for exposing the peripheral edge of an object to be processed by irradiating light onto the peripheral edge, including a means for exposing the peripheral edge of the object to be processed, and a device for exposing the peripheral edge of the object to be processed. The present invention provides an exposure apparatus characterized in that it is equipped with a means for discharging the atmosphere from at least the light irradiation part of the body periphery.
（作用効果）
即ち、本発明は、被処理体の周縁部を露光する手段と、
上記被処理体周縁の少なくとも光照射部の雰囲気を排出
する手段を備えたことにより、上記光照射部が発泡しダ
ストが発生しても、これを強制的に排出してしまうため
、上記発生したダストが飛散して上記被処理体表面に付
着することを抑止することができる。そのため、上記被
処理体の歩留まりを低下させることはない。(Operation and Effect) That is, the present invention provides means for exposing the peripheral portion of the object to be processed;
By providing a means for discharging the atmosphere of at least the light irradiation part around the periphery of the object to be processed, even if the light irradiation part foams and dust is generated, the dust is forcibly discharged. It is possible to prevent dust from scattering and adhering to the surface of the object to be processed. Therefore, the yield of the object to be processed is not reduced.
（実施例）
以下、本発明装置をレジストの周辺霧光用装置に適用し
た一実施例を、図面を参照して説明する。(Example) Hereinafter, an example in which the apparatus of the present invention is applied to an apparatus for peripheral fogging of a resist will be described with reference to the drawings.
まず、露光装置の構成を説明する。First, the configuration of the exposure apparatus will be explained.
第１図及び第２図に示すように、被処理体例えば半導体
ウェハ■を設置可能な如く上面が平板状のスピンチャッ
ク■が設けられている。このスピンチャック■の上面に
は、図示しない真空装置に接続した真空吸着孔■が形成
されており、上記ウェハ■の吸着保持が可能とされてい
る。更に、このスピンチャック■の下端には回転機構例
えばスピンモータに）が連設しており、上記スピンチャ
ック■を介してウェハ■の回転を可能としている。As shown in FIGS. 1 and 2, a spin chuck (2) having a flat top surface is provided so that an object to be processed, such as a semiconductor wafer (2), can be placed thereon. A vacuum suction hole (2) connected to a vacuum device (not shown) is formed on the upper surface of this spin chuck (2), and the wafer (4) can be held by suction. Further, a rotation mechanism (for example, a spin motor) is connected to the lower end of the spin chuck (2), which enables the rotation of the wafer (2) via the spin chuck (2).
また、上記スピンチャック■で保持したウェハ■の周縁
部上方には、このウェハ（１）周縁部を露光する手段例
えば光照射機構■が設けられている。この光照射機構■
には、露光用光例えばＵＶ光の光導管■例えば光グラス
ファイバが接続し、図示しない光源からの光を上記ウェ
ハ（υ周縁部へ照射可能とされている。この光照射機構
■をウェハ■の回転中心方向に外周端付近を直進的に移
動可能な如く移動機構■例えばボールネジが設けられ、
この移動機構■と連結して回転駆動を伝える如く駆動機
構■例えばパルス制御されるステッピングモータが設け
られている。また、上記ウェハ■周縁の少なくとも光照
射部の雰囲気を排出する手段例えば排気機構（図示せず
）に接続した排気ノズル■が設けられている。この排気
ノズル■は、上記ウェハ■と非接触で極力近接配置させ
、ウェハ（０をスピンチャック■上に着脱する際に障害
とならないように、移動が可能な構造としてもよい。こ
のようにして露光装置が構成されている。Further, above the peripheral edge of the wafer (1) held by the spin chuck (2), a means for exposing the peripheral edge of the wafer (1), for example, a light irradiation mechanism (2) is provided. This light irradiation mechanism■
A light conduit (for example, an optical glass fiber) for exposing light, such as UV light, is connected to the wafer (υ), and light from a light source (not shown) can be irradiated onto the wafer (υ) periphery. A moving mechanism such as a ball screw is provided so as to be able to move linearly near the outer peripheral edge in the direction of the rotation center of the
A drive mechanism (eg, a pulse-controlled stepping motor) is provided to connect with the moving mechanism (2) and transmit rotational drive. Further, a means for discharging the atmosphere from at least the light irradiated area at the periphery of the wafer (1), such as an exhaust nozzle (2) connected to an exhaust mechanism (not shown), is provided. This exhaust nozzle (2) may be arranged as close as possible to the wafer (2) without contacting it, and may be movable so that it does not become an obstacle when loading and unloading the wafer (0) onto the spin chuck (2). An exposure device is configured.
次に、上述した露光装置の動作作用及び露光方法を説明
する。Next, the operation and exposure method of the above-mentioned exposure apparatus will be explained.
まず、図示しない搬送機構例えばハンドリングアームで
、被処理体例えばレジスト等が塗布された半導体ウェハ
（υを搬入し、スピンチャック■の回転中心とウェハ■
の回転中心とが合おせられた状態で、スピンチャック■
上にウェハ■を載置する。この時、スピンチャック■に
形成されている真空吸着孔■を、図示しない真空装置に
より減圧状態とし、これにより上記ウェハα）を吸着保
持する。First, a transport mechanism (not shown), such as a handling arm, transports an object to be processed, such as a semiconductor wafer (υ) coated with resist, etc., and places the rotation center of the spin chuck ■ and the wafer ■
With the center of rotation of the spin chuck
Place the wafer ■ on top. At this time, the vacuum suction hole (2) formed in the spin chuck (2) is reduced in pressure by a vacuum device (not shown), thereby sucking and holding the wafer α).
そして、スピンモータ０）を駆動してウェハ■を低速で
回転させる。同時に、図示しない光源例えば水銀ランプ
やキセノンランプのような紫外線ランプからの光例えば
ＵＶ光を、光導管■を介して光照射機構■からウェハ■
周縁部へ照射する。この時、予め定められたサイドリン
ス又は裏面洗浄に必要な処理幅で上記ウニ４ω周縁部の
露光処理を行なう如く、上記移動機構■を駆動機構（８
）で駆動することにより光照射機構０を位置決めしてお
く。また、上記ＵＶ光の照射と同時に例えば真空ポンプ
に接続された排気ノズル（９）から、上記ウェハ０）周
縁の少なくとも光照射部の雰囲気を吸引し、強制的に外
部に排出する。この状態で上記ウェハ（１）を数回転例
えば１〜２回転させることにより、ウェハ０）周縁部の
レジストを感光させて露光処理を行なう。この際、ウェ
ハ０表面に被着されているレジストの上記ＵＶ光が照射
された部分から発泡し、この発泡により発生したダスト
が周囲に飛散する。即ち、上記ウェハ０表面に被着され
ているレジストは、レジストの回転塗布時における遠心
力及び表面張力の影響で、中央部より周縁部の方が版厚
は厚くなっている。このため、ウェハ（０周縁部の厚い
レジストを除去するためには、」二記膜厚に相応する強
い光を照射しなければならない。Then, the spin motor 0) is driven to rotate the wafer (2) at a low speed. At the same time, light e.g. UV light from a light source (not shown) e.g. an ultraviolet lamp such as a mercury lamp or a xenon lamp is transmitted from the light irradiation mechanism (2) to the wafer (2) through a light conduit (2).
Irradiates the peripheral area. At this time, the moving mechanism (2) is moved by the drive mechanism (8
) to position the light irradiation mechanism 0. Further, at the same time as the UV light irradiation, the atmosphere around at least the light irradiated area of the wafer 0) is sucked in from an exhaust nozzle (9) connected to a vacuum pump, for example, and forcibly discharged to the outside. In this state, the wafer (1) is rotated several times, for example, once or twice, to expose the resist at the peripheral edge of the wafer (0) and perform an exposure process. At this time, foaming occurs from the portion of the resist adhered to the surface of the wafer 0 that is irradiated with the UV light, and dust generated by this foaming is scattered around. That is, the thickness of the resist deposited on the surface of the wafer 0 is thicker at the periphery than at the center due to the effects of centrifugal force and surface tension during spin coating of the resist. Therefore, in order to remove the thick resist on the periphery of the wafer, it is necessary to irradiate it with strong light corresponding to the film thickness.
しかし、この強い光をレジストに照射すると、レジスト
内部から発生した気体がレジスト表面を突き破って蒸発
するため、これにより発泡し、ダストが飛散する。この
ダストがウェハα）表面に付着すると、ウェハ■の現像
処理の際に現像残りとなり１歩留まりを悪化させてしま
う。しかし、上記ウェハ０表面の光照射部の雰囲気を排
気ノズル０により強制的に外部に排出してしまうため、
上記発泡によりダストが発生しても、このダストは上記
排気ノズル■に吸引され、外部に排出される。However, when the resist is irradiated with this strong light, gas generated from inside the resist breaks through the resist surface and evaporates, causing foaming and scattering of dust. If this dust adheres to the surface of the wafer α), it will remain undeveloped during the development process of the wafer ①, degrading the yield. However, since the atmosphere in the light irradiation area on the surface of wafer 0 is forcibly exhausted to the outside by exhaust nozzle 0,
Even if dust is generated due to the foaming, this dust is sucked into the exhaust nozzle (2) and discharged to the outside.
このため、上記ダストの飛散による歩留まりの低下を防
止することができる。Therefore, it is possible to prevent the yield from decreasing due to the scattering of the dust.
そして、上記ウェハ■周縁部のレジストを総て露光処理
するが、ウェハ（υには一般的にオリエンテーション・
フラットが形成されているため、ウェハ■を回転させた
ことのみでは上記オリエンテーション・フラット部のレ
ジストに露光することが困難となる。そのため、図示は
しないが上記ウェハ■の周縁部にセンサー例えば透過型
センサーを配置し、このセンサーによりウェハ（υのオ
リエンテーション・フラットの位置を認識し、このオリ
エンテーション・フラット部の露光時には、上記駆動機
構（ハ）を回転制御して光照射機構■を上記ウェハ０）
の中心方向へ移動させる。この移動によりオリエンテー
ション・フラット部のレジストも他の周縁部と同様の処
理幅で露光することができる。Then, all of the resist on the periphery of the wafer ■ is exposed to light, but the wafer (υ) is generally
Since a flat portion is formed, it is difficult to expose the resist in the orientation flat portion simply by rotating the wafer (2). Therefore, although not shown, a sensor, such as a transmission type sensor, is placed at the periphery of the wafer (■), and this sensor recognizes the position of the orientation flat of the wafer (υ), and when exposing this orientation flat part, the drive mechanism (c) Control the rotation of the light irradiation mechanism ■ to the above wafer 0)
move it toward the center. This movement allows the resist in the orientation flat portion to be exposed with the same processing width as the other peripheral portions.
その後、所望の露光が終了すると、ウェハ（１）を図示
しない搬送機構により搬出し、露光処理が完了する。そ
して搬出されたウェハ（］）は図示しない次工程の処理
装置により、露光されたウェハ■周縁部のレジストが現
像・洗浄される。このことにより、ウェハ（１）の汚染
やウェハ０）周縁部のレジストの盛り上りによる焦点ボ
ケ等の問題が解決される。Thereafter, when the desired exposure is completed, the wafer (1) is carried out by a transport mechanism (not shown), and the exposure process is completed. Then, the carried out wafer ( ) is subjected to a next process processing device (not shown) in which the exposed resist on the periphery of the wafer ( ) is developed and cleaned. This solves problems such as contamination of the wafer (1) and out-of-focus caused by swelling of the resist at the peripheral edge of the wafer (0).
上記実施例では、ウェハ（９周縁の少なくとも光照射部
の雰囲気を排出することのみにより、ダストを吸引する
例を説明したが、これに限定するものではなく、例えば
上記雰囲気を排出する排気ノズル（９）に向けて気体例
えば窒素ガス等の不活性ガスを噴出するガスパージ機構
を併用し、強力なガスの流れを形成して上記ダストを排
出するように構成しても同様な効果が得られる。In the above embodiment, an example was explained in which dust is sucked only by discharging the atmosphere from at least the light irradiation part on the periphery of the wafer (9), but the invention is not limited to this, and for example, an exhaust nozzle ( A similar effect can be obtained by using a gas purge mechanism that blows out an inert gas such as nitrogen gas toward 9) to form a strong gas flow to discharge the dust.
また、上記実施例では被処理体として半導体ウェハを用
いて説明したが、これに限定するものではなく１例えば
液晶ＴＶなどの画面表示装置に用いられるＬＣＤ基板、
円板状フロッピーディスクへの磁性材のスピンコーティ
ングにも同様な効果が得られる。Furthermore, although the above embodiments have been described using semiconductor wafers as objects to be processed, the present invention is not limited to this.For example, LCD substrates used in screen display devices such as liquid crystal TVs,
A similar effect can be obtained by spin coating a disk-shaped floppy disk with a magnetic material.
以上述べたようにこの実施例によれば、被処理体の周縁
部を露光する手段と、上記被処理体周縁の少なくとも光
照射部の雰囲気を排出する手段を備えたことにより、上
記光照射部が発泡してダストが発生しても、これを強制
的に排出してしまうため、上記発生したダストが飛散し
て上記被処理体表面に付着することを抑止することがで
きる。As described above, according to this embodiment, the light irradiation section is provided with a means for exposing the peripheral edge of the object to be processed and a means for exhausting the atmosphere of at least the light irradiation section at the periphery of the object to be processed. Even if dust is generated due to foaming, the dust is forcibly discharged, so that it is possible to prevent the generated dust from scattering and adhering to the surface of the object to be treated.
そのため、上記被処理体の歩留まりを低下させることは
ない。Therefore, the yield of the object to be processed is not reduced.
第１図は本発明装置の一実施例を説明するための露光装
置の構成図、第２図は第１図露光装置の斜視図である。
１・・・ウェハ ５・・・光照射機構６・・
・光導管
９・・・排気ノズルFIG. 1 is a configuration diagram of an exposure apparatus for explaining one embodiment of the apparatus of the present invention, and FIG. 2 is a perspective view of the exposure apparatus shown in FIG. 1. 1... Wafer 5... Light irradiation mechanism 6...
・Light pipe 9...exhaust nozzle
Claims (1)
装置において、上記被処理体の周縁部を露光する手段と
、上記被処理体周縁の少なくとも光照射部の雰囲気を排
出する手段を備えたことを特徴とする露光装置。In an apparatus that exposes the peripheral edge of the object to be processed by irradiating the peripheral edge with light, the device includes means for exposing the peripheral edge of the object to be processed, and means for exhausting the atmosphere of at least the light irradiated area of the periphery of the object to be processed. An exposure device characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1014677A JP2810680B2 (en) | 1989-01-24 | 1989-01-24 | Exposure apparatus and exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1014677A JP2810680B2 (en) | 1989-01-24 | 1989-01-24 | Exposure apparatus and exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02194619A true JPH02194619A (en) | 1990-08-01 |
| JP2810680B2 JP2810680B2 (en) | 1998-10-15 |
Family
ID=11867848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1014677A Expired - Lifetime JP2810680B2 (en) | 1989-01-24 | 1989-01-24 | Exposure apparatus and exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2810680B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6497240B1 (en) * | 1999-04-21 | 2002-12-24 | Sharp Kabushiki Kaisha | Ultrasound cleaning device and resist-stripping device |
| US6532563B2 (en) | 1997-10-29 | 2003-03-11 | At&T Corp. | Incremental redundancy radio link protocol |
| US7328713B2 (en) * | 2004-11-30 | 2008-02-12 | Samsung Electronics Co., Ltd. | Nozzle apparatus for stripping edge bead of wafer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0237712A (en) * | 1988-07-27 | 1990-02-07 | Mitsubishi Electric Corp | Wafer periphery exposure device |
-
1989
- 1989-01-24 JP JP1014677A patent/JP2810680B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0237712A (en) * | 1988-07-27 | 1990-02-07 | Mitsubishi Electric Corp | Wafer periphery exposure device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6532563B2 (en) | 1997-10-29 | 2003-03-11 | At&T Corp. | Incremental redundancy radio link protocol |
| US6497240B1 (en) * | 1999-04-21 | 2002-12-24 | Sharp Kabushiki Kaisha | Ultrasound cleaning device and resist-stripping device |
| US7328713B2 (en) * | 2004-11-30 | 2008-02-12 | Samsung Electronics Co., Ltd. | Nozzle apparatus for stripping edge bead of wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2810680B2 (en) | 1998-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4343069B2 (en) | Coating, developing device, exposure device, and resist pattern forming method. | |
| JP3768440B2 (en) | Substrate peripheral processing apparatus and substrate peripheral processing method | |
| JP2002361155A (en) | Coating device and its method | |
| JP3426560B2 (en) | Substrate cleaning method | |
| JP3818858B2 (en) | Liquid processing equipment | |
| JP2002110626A (en) | Bevel-etching apparatus and method | |
| JPH02194619A (en) | Aligner | |
| JP2001110714A (en) | Chemical liquid coater and chemical liquid coating method | |
| JP3917493B2 (en) | Substrate processing apparatus and substrate processing method | |
| JP2881362B2 (en) | Exposure equipment | |
| JP3199548B2 (en) | Exposure apparatus and exposure method | |
| JPH0669126A (en) | Wafer periphery cleaner | |
| JP3381017B2 (en) | Processing device and processing method | |
| JPH03256677A (en) | Thin piece suction holding device | |
| JP2003051477A (en) | Substrate processing apparatus | |
| JP2978619B2 (en) | Semiconductor device manufacturing method and manufacturing apparatus | |
| JPH08276163A (en) | Treatment of surface of plate-like specimen | |
| JPH0530348Y2 (en) | ||
| JPH07263310A (en) | Device and method for rotational treatment | |
| KR102108316B1 (en) | Apparatus and Method for treating substrate | |
| JPH0558649B2 (en) | ||
| JPH11219877A (en) | Substrate processing apparatus | |
| JP2022033032A (en) | Board transfer device, board processing device, and board transfer method | |
| JPH1092737A (en) | Exposure method and exposure device | |
| JP3264186B2 (en) | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090731 Year of fee payment: 11 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090731 Year of fee payment: 11 |