JPH02194551A - Manufacture of diamond heat sink - Google Patents
Manufacture of diamond heat sinkInfo
- Publication number
- JPH02194551A JPH02194551A JP1427889A JP1427889A JPH02194551A JP H02194551 A JPH02194551 A JP H02194551A JP 1427889 A JP1427889 A JP 1427889A JP 1427889 A JP1427889 A JP 1427889A JP H02194551 A JPH02194551 A JP H02194551A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diamond
- heat sink
- diamond film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 50
- 239000010432 diamond Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052802 copper Inorganic materials 0.000 abstract description 7
- 239000010949 copper Substances 0.000 abstract description 7
- 238000010891 electric arc Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000011148 porous material Substances 0.000 abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 abstract description 5
- 239000010937 tungsten Substances 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
全体がダイヤモンドからなるヒートシンクの代替品とし
て用いることが可能なヒートシンクの製造方法に関し、
簡単且つ容易に行える工程により、全体がダイヤモンド
からなるヒートシンクと同等の冷却効果を存するダイヤ
モンドヒートシンクの製造方法の提供を目的とし、
ダイヤモンド膜を具備するヒートシンクのＣＶＤ法によ
る製造方法であって、気孔性を存し、ダイヤモンドの熱
膨張係数と近似の熱膨張係数を有する基板の表面に、ア
ーク放電によって発生させた炭素プラズマにより合成し
たダイヤモンド膜を成長させる工程と、前記基板の気孔
内に、熱伝導度の大なる金属を含浸させる工程とを含む
よう構成する。[Detailed Description of the Invention] [Summary] A method for manufacturing a heat sink that can be used as a substitute for a heat sink made entirely of diamond, which provides cooling equivalent to that of a heat sink made entirely of diamond through a simple and easy process. The purpose of the present invention is to provide a method for manufacturing a diamond heat sink having a diamond film, and a method for manufacturing a heat sink including a diamond film by a CVD method. The method includes the steps of growing a diamond film synthesized by carbon plasma generated by arc discharge on the surface of the substrate, and impregnating the pores of the substrate with a metal having high thermal conductivity.
本発明は、ヒートシンクに係り、特に全体がダイヤモン
ドからなるヒートシンクの代替品として用いることが可
能なヒートシンクの製造方法に関するものである。The present invention relates to a heat sink, and particularly to a method for manufacturing a heat sink that can be used as a substitute for a heat sink made entirely of diamond.
半導体レーザ等の発熱量の大なる能動素子の冷却を行う
ためには、銅の数倍の高い熱伝導度を有するダイヤモン
ドがヒートシンクとして用いられている。Diamond, which has thermal conductivity several times higher than copper, is used as a heat sink to cool active elements that generate a large amount of heat, such as semiconductor lasers.
しかしながら、ダイヤモンドからなるヒートシンクの製
造工程にはメタライズ工程が含まれており種々な障害が
生じている上、複雑な工程が必要であるため価格が高価
なものとなっている。However, the manufacturing process of a heat sink made of diamond includes a metallization process, which causes various problems, and requires complicated processes, making it expensive.
以上のような状況から製造工程が簡単で、性能が安定し
ており、価格が低度なヒートシンクが要望されている。Under the above circumstances, there is a demand for a heat sink that has a simple manufacturing process, stable performance, and low cost.
従来のダイヤモンドヒートシンクの製造方法を第２図に
より詳細に説明する。A conventional method for manufacturing a diamond heat sink will be explained in detail with reference to FIG.
まず、ダイヤモンドの原石をレーザによりカットし、第
２図ｆａ）に示すような０．７ｍｍ四角で、厚さ０．４
ｆｌの基板２１ａ ）ｆ：製造する。First, a rough diamond is cut with a laser into a 0.7 mm square shape with a thickness of 0.4 mm as shown in Figure 2 fa).
fl substrate 21a) f: Manufacture.
つぎに、ダイヤモンドパウダーを用いてこの基板２１ａ
の上下面を研磨仕上げする。Next, using diamond powder, this substrate 21a is
Polish the top and bottom surfaces.
ついで、この基板２１ａのＱ、７ｍ四角の二面或いは側
面をも含む全表面にメタライズ加工を施して金属膜を形
成する。Next, the entire surface of the substrate 21a, including two sides or side surfaces of the Q, 7m square, is subjected to metallization processing to form a metal film.
このメタライズ加工は、チタン（Ｔｉ）、白金（ＰＬ）
。This metallization process uses titanium (Ti), platinum (PL)
.
金（Ａｕ）を、１頓次各々２．０００〜３ 、０００人
の膜厚で形成し、チタン膜２１ｂ、白金膜２１ｃ、金膜
２１ｄの三層の金属膜を形成してゆくものである。Gold (Au) is formed at a thickness of 2,000 to 3,000 layers each to form three layers of metal films: a titanium film 21b, a platinum film 21c, and a gold film 21d. .
最後に、第２図（Ｃ）に示すように銅からなるサブキャ
リア２２の表面の中央に、上記の製造方法により製造し
たダイヤモンドヒートシンク２１をはんだ付けし、この
ダイヤモンドヒートシンク２１の中央に半導体レーザ２
３の電極２３ａをはんだ付けして一体構造にする。Finally, as shown in FIG. 2(C), the diamond heat sink 21 manufactured by the above manufacturing method is soldered to the center of the surface of the subcarrier 22 made of copper, and the semiconductor laser 2 is placed in the center of this diamond heat sink 21.
The electrodes 23a of No. 3 are soldered to form an integral structure.
したがって、半導体レーザ２３で発生した熱はダイヤモ
ンドヒートシンク２１に伝導し、このダイヤモンドヒー
トシンク２１の表面から放熱すると同時に、その下部に
はんだ付けされているサブキャリア２２に伝導される。Therefore, the heat generated by the semiconductor laser 23 is conducted to the diamond heat sink 21, and is radiated from the surface of the diamond heat sink 21, and at the same time is conducted to the subcarrier 22 soldered below.
以上説明した従来のダイヤモンドヒートシンクにおいて
は、半導体レーザ及びサブキャリアにはんだ付けするた
め、表面にメタライズ加工により金属膜を形成している
が、この金属膜を安定した状態で形成することが非常に
難しく、密着性不良に起因する剥離が多発し、剥離に至
らなくても接触不良による熱伝導性能の劣化が生じると
いう問題点があり、また、ヒートシンク全体がダイヤモ
ンドであり、メタライズ工程が複雑な工程のため、価格
が高価になるという問題点があった。In the conventional diamond heat sink described above, a metal film is formed on the surface by metallization processing in order to be soldered to the semiconductor laser and subcarrier, but it is extremely difficult to form this metal film in a stable state. , there is a problem that peeling occurs frequently due to poor adhesion, and even if peeling does not occur, thermal conduction performance deteriorates due to poor contact.Furthermore, the entire heat sink is made of diamond, and the metallization process is complicated. Therefore, there was a problem that the price was high.
本発明は以上のような状況から節単且つ容易に行える工
程により、全体がダイヤモンドからなるヒートシンクと
同等の冷却効果を有するダイヤモンドヒートシンクの製
造方法の提供を目的としたものである。In view of the above circumstances, it is an object of the present invention to provide a method for manufacturing a diamond heat sink that has a cooling effect equivalent to that of a heat sink made entirely of diamond, using simple and easily performed steps.
本発明のダイヤモンドヒートシンクの製造方法は、気孔
性を有し、ダイヤモンドの熱膨張係数と近似の熱膨張係
数を有する基板の表面に、アーク放電によって発生させ
た炭素プラズマを原料とするＣＶＤ法により合成したダ
イヤモンド膜を成長させる工程と、前記基板の気孔内に
、熱伝導度の大なる金属を含浸させる工程とを含むよう
構成する。The method for manufacturing a diamond heat sink of the present invention is to synthesize the diamond heat sink using a CVD method using carbon plasma generated by arc discharge as a raw material on the surface of a substrate that is porous and has a thermal expansion coefficient similar to that of diamond. and a step of impregnating a metal with high thermal conductivity into the pores of the substrate.
即ち本発明においては、水素ガスとメタンガスをアーク
放電によりプラズマジェットにし、気孔性を有し、ダイ
ヤモンドの熱膨張係数と近似の熱膨張係数を有する基板
の表面にＣＶＤ法を用いてダイヤモンド膜を成長させる
ので、ダイヤモンド膜と基板の密着性が良く、更にこの
基板の気孔内に熱伝導度の大なる金属を溶融して含浸さ
せるから、半導体レーザの発熱をダイヤモンド膜に伝導
してその表面から放散させると同時に、基板を通してサ
ブキャリアに伝導させることが可能となる。That is, in the present invention, hydrogen gas and methane gas are made into a plasma jet by arc discharge, and a diamond film is grown using the CVD method on the surface of a substrate that is porous and has a coefficient of thermal expansion similar to that of diamond. This allows good adhesion between the diamond film and the substrate, and since the pores of the substrate are melted and impregnated with a metal with high thermal conductivity, the heat generated by the semiconductor laser is conducted to the diamond film and radiated from its surface. At the same time, it becomes possible to cause conduction to subcarriers through the substrate.
以下第１図により本発明の一実施例を工程順に説明する
。Hereinafter, an embodiment of the present invention will be explained in order of steps with reference to FIG.
まず、第１図に示すようなＣＶＤ装置を用いて下記の条
件でタングステンを焼結した基板１の表面にダイヤモン
ド膜２を形成する。First, using a CVD apparatus as shown in FIG. 1, a diamond film 2 is formed on the surface of a substrate 1 on which tungsten is sintered under the following conditions.
導入ガス及びガス流ｍ−−−−−−水素ガス（■］）１
０〜５０１／分
及びメタンガス（ＣＨ４）
０．５〜１．０１！／分
直流電源電圧−・−−一一−−−−−−−−−−−−５
０〜１５０〜ｌアーク電流−・−ｍ−−−−・−・−−
−１０〜７０Ａ反応室内圧−−−−一一−・−１，００
０〜Ｎｏ、 ０００パス力ル第１図（ａｌはＣＶＤ装置
の概略構造図であり、排気口ＩＯに接続されている排気
装置１１によって室内圧が上記の反応室内圧に保持され
た反応室４内下部の、冷却水が冷却水供給口５ａから供
給されているのステージ５には基板１が載置されており
、反応室４の上部にはガス導入口６ａを具備する電極６
が設けられており、この電極６には直流電源７により電
圧が印加され、アーク放電８によりプラズマジェット９
が発生する。Introduced gas and gas flow m----Hydrogen gas (■]) 1
0~501/min and methane gas (CH4) 0.5~1.01! /min DC power supply voltage - - - - 11 - - - - - - - - - - - 5
0~150~l Arc current-・-m----・-・--
-10~70A reaction chamber pressure---11-・-1,00
0 to No, 000 pass power Fig. 1 (al is a schematic structural diagram of the CVD apparatus, and the reaction chamber 4 is maintained at the above-mentioned reaction chamber pressure by the exhaust device 11 connected to the exhaust port IO. A substrate 1 is placed on a stage 5 in the inner lower part to which cooling water is supplied from a cooling water supply port 5a, and an electrode 6 having a gas introduction port 6a is placed in the upper part of the reaction chamber 4.
A voltage is applied to this electrode 6 by a DC power supply 7, and a plasma jet 9 is generated by an arc discharge 8.
occurs.
ガス導入口６ａからは水素ガスとメタンガスが導入され
ているので、このプラズマジェット９が基板１に当たる
と、この基板１の表面にダイヤモンド膜２が成長する。Since hydrogen gas and methane gas are introduced through the gas inlet 6a, when this plasma jet 9 hits the substrate 1, a diamond film 2 grows on the surface of the substrate 1.
基板１は気孔率７０％の焼結タングステン（Ｗ）で、そ
の寸法は２０ｆｍ四角で厚さは０ 、５ ＊ｘである。The substrate 1 is made of sintered tungsten (W) with a porosity of 70%, and its dimensions are 20 fm square and the thickness is 0.5*x.
このようにして密着力の優れた厚さ１ｎのダイヤモンド
膜２を成長させた基板１を、第１図（ｂ）に示すように
熔融装置１２で１，１５０℃で溶融した銅３の中に浸漬
し、基板１の気孔内に銅３を含浸さゼる。The substrate 1 on which the diamond film 2 with a thickness of 1 nm with excellent adhesion has been grown in this manner is placed in a copper 3 melted at 1,150°C in a melting device 12, as shown in FIG. 1(b). The copper 3 is impregnated into the pores of the substrate 1 by immersion.
本発明の製造方法により製造したタングステンの基板Ｉ
にダイヤモンド膜２を成長させたダイヤモンドヒートシ
ンクを実用に供した結果、従来の全体がダイヤモンドか
らなるヒートシンクと同等の冷却効果を有することが判
明した。Tungsten substrate I manufactured by the manufacturing method of the present invention
As a result of putting into practical use a diamond heat sink on which a diamond film 2 was grown, it was found that it had a cooling effect equivalent to that of a conventional heat sink made entirely of diamond.
以上の説明から明らかなように本発明によれば、メタラ
イズ加工を要しない簡単且つ容易に行える工程により、
タングステンにダイヤモンド膜を基板の表面に成長させ
た低度な価格のヒートシンクを用いることによって、全
体がダイヤモンドからなるヒートシンクと同等の冷却効
果を得ることができる利点があり、著しい経済的及び、
信頼性向上の効果が期待できるダイヤモンドヒートシン
クの製造方法の提供が可能である。As is clear from the above description, according to the present invention, through a simple and easy process that does not require metallization,
By using a low-cost heat sink made of tungsten with a diamond film grown on the surface of the substrate, it has the advantage of being able to obtain a cooling effect equivalent to that of a heat sink made entirely of diamond, which is extremely economical and
It is possible to provide a method for manufacturing a diamond heat sink that can be expected to have the effect of improving reliability.
第１図は本発明による一実施例を工程順に示す図、
第２図は従来のダイヤモンドヒートシンクの製造方法を
工程順に示す図、
である。
図において、
１は基板、
２はダイヤモンド膜、
を示す。
３は銅、
４は反応室、
５はステージ、
５ａは冷却水供給口、
６は電極、
６ａはガス導入口、
７は直流電源、
８はアーク放電、
９はプラズマジェット・
１０は排気口、
１１は排気装置、
１２は熔融装置、
ｆａｌ
ダイヤモンド膜（２）
の取量
を発明によＳ−実施例を工程順に示す７弔
図（その１）
山）
綱の含浸
本発明による一実施例を工程晴に示す図第
図（その２）
（ａｌ
基Ｆｉ輯ｌ〕のカット
研臀
従来のダイヤモンドヒートンンクの・７漬方法を工程順
に示すズ第
図（その１）FIG. 1 is a diagram showing an example of the present invention in the order of steps, and FIG. 2 is a diagram showing the conventional method for manufacturing a diamond heat sink in the order of steps. In the figure, 1 indicates a substrate, and 2 indicates a diamond film. 3 is copper, 4 is a reaction chamber, 5 is a stage, 5a is a cooling water supply port, 6 is an electrode, 6a is a gas inlet, 7 is a DC power supply, 8 is an arc discharge, 9 is a plasma jet, 10 is an exhaust port, 11 is an exhaust device, 12 is a melting device, fal Diamond film (2) 7 Funeral diagrams showing S-Embodiments in order of process according to the invention (Part 1) Impregnation of rope An embodiment according to the present invention Diagram showing the process diagram (Part 2) Diagram showing the conventional method of cutting and polishing the diamond heat tonk in order of process (Part 1)
Claims (1)
る製造方法であって、 気孔性を有し、ダイヤモンドの熱膨張係数と近似の熱膨
張係数を有する基板（１）の表面に、アーク放電（８）
によって発生させた炭素プラズマにより合成したダイヤ
モンド膜（２）を成長させる工程と、 前記基板（１）の気孔内に、熱伝導度の大なる金属（３
）を含浸させる工程と、 を含むことを特徴とするダイヤモンドヒートシンクの製
造方法。[Claims] A method for manufacturing a heat sink equipped with a diamond film by the CVD method, comprising: a substrate (1) having porosity and having a coefficient of thermal expansion approximately similar to that of diamond; Discharge (8)
A step of growing a diamond film (2) synthesized by carbon plasma generated by
); and a method for manufacturing a diamond heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1427889A JP2611412B2 (en) | 1989-01-23 | 1989-01-23 | Manufacturing method of diamond heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1427889A JP2611412B2 (en) | 1989-01-23 | 1989-01-23 | Manufacturing method of diamond heat sink |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02194551A true JPH02194551A (en) | 1990-08-01 |
| JP2611412B2 JP2611412B2 (en) | 1997-05-21 |
Family
ID=11856626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1427889A Expired - Lifetime JP2611412B2 (en) | 1989-01-23 | 1989-01-23 | Manufacturing method of diamond heat sink |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2611412B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0518631A2 (en) * | 1991-06-10 | 1992-12-16 | De Beers Industrial Diamond Division (Proprietary) Limited | Tool components |
| JPH05259328A (en) * | 1992-01-23 | 1993-10-08 | Siemens Ag | Semiconductor module |
| WO2000063967A1 (en) * | 1999-04-20 | 2000-10-26 | Toyo Kohan Co., Ltd. | Heat sink base, heat sink, and method of manufacturing heat sink |
-
1989
- 1989-01-23 JP JP1427889A patent/JP2611412B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0518631A2 (en) * | 1991-06-10 | 1992-12-16 | De Beers Industrial Diamond Division (Proprietary) Limited | Tool components |
| EP0518631A3 (en) * | 1991-06-10 | 1995-05-17 | De Beers Ind Diamond | Tool components |
| JPH05259328A (en) * | 1992-01-23 | 1993-10-08 | Siemens Ag | Semiconductor module |
| WO2000063967A1 (en) * | 1999-04-20 | 2000-10-26 | Toyo Kohan Co., Ltd. | Heat sink base, heat sink, and method of manufacturing heat sink |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2611412B2 (en) | 1997-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1193751B1 (en) | Electrode and method of manufacturing an electrode | |
| TWI573489B (en) | Ceramic heater | |
| CN109930125B (en) | Magnetron sputtering coating method for diamond-aluminum composite material | |
| JPH11354260A (en) | Multiple-layered ceramic heater | |
| KR20050006157A (en) | Silicon parts for plasma reaction chambers | |
| JPH02194551A (en) | Manufacture of diamond heat sink | |
| TWI742127B (en) | Ring-shaped electrode | |
| JP2004363334A (en) | Holder for semiconductor or liquid crystal production system and semiconductor or liquid crystal production system mounting it | |
| JPH0556851B2 (en) | ||
| JPH0851110A (en) | Method for forming insulating film | |
| JPH0757739A (en) | Manufacture of fuel electrode for high temperature type fuel cell | |
| JP3370489B2 (en) | Electrostatic chuck | |
| KR20000006202A (en) | A highly resistive recrystallized silicon carbide, an anti-corrosive member, a method for producing the highly resistive recrystallized silicon carbide, and a method for producing the anti-corrosive member | |
| JP6146840B1 (en) | Electrode plate | |
| JP3572293B2 (en) | Current introduction terminal and vacuum processing apparatus having the same | |
| JP4433686B2 (en) | HOLDER FOR SEMICONDUCTOR OR LIQUID CRYSTAL MANUFACTURING DEVICE AND SEMICONDUCTOR OR LIQUID CRYSTAL MANUFACTURING DEVICE WITH THE SAME | |
| CN112420638A (en) | Diamond film copper-clad heat sink and preparation method thereof | |
| JPH1167740A (en) | Heater and semiconductor manufacturing device using heater | |
| JPH0870070A (en) | Semiconductor device | |
| JPH11111628A (en) | Heating element made of silicon and semiconductor manufacturing apparatus using the same | |
| JP3948296B2 (en) | Plasma etching processing method and apparatus | |
| JPH0845911A (en) | Electrode for plasma treatment device | |
| JPH0481557B2 (en) | ||
| JP2006249552A (en) | Diamond electrode structure and method for producing the same | |
| KR100556216B1 (en) | Fabrication method of adherent diamond coated cutting tool |