JPH02192483A - Diamond silicon carbide composite - Google Patents
Diamond silicon carbide compositeInfo
- Publication number
- JPH02192483A JPH02192483A JP30833188A JP30833188A JPH02192483A JP H02192483 A JPH02192483 A JP H02192483A JP 30833188 A JP30833188 A JP 30833188A JP 30833188 A JP30833188 A JP 30833188A JP H02192483 A JPH02192483 A JP H02192483A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- diamond film
- film
- silicon carbide
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 46
- 239000010432 diamond Substances 0.000 title claims abstract description 46
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000002131 composite material Substances 0.000 title claims abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 11
- 229910002804 graphite Inorganic materials 0.000 abstract description 10
- 239000010439 graphite Substances 0.000 abstract description 10
- 230000007797 corrosion Effects 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 7
- 239000007789 gas Substances 0.000 abstract description 6
- 239000004215 Carbon black (E152) Substances 0.000 abstract description 3
- 239000012159 carrier gas Substances 0.000 abstract description 3
- 229930195733 hydrocarbon Natural products 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- -1 silicon halide Chemical class 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 231100000895 deafness Toxicity 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 208000016354 hearing loss disease Diseases 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5001—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with carbon or carbonisable materials
- C04B41/5002—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は切削用のし異材料やメカニカルシール等に使用
されるダイヤモンド炭化硅素複合体に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a diamond silicon carbide composite used for cutting materials, mechanical seals, and the like.
［従来の技術］
炭化硅素焼結体は通常は六方晶炭化硅素（α型）、立方
晶炭化硅素（β型）の粉末にＣ，Ｂ。[Prior Art] Silicon carbide sintered bodies are usually made of hexagonal silicon carbide (α type) or cubic silicon carbide (β type) powder containing C and B.
Ａ１１等の焼結助剤を添加して成形、焼成してつくられ
ている。そしてこれらの炭化硅素はＳ ｉ ０２とＣの
反応により製造されるのが普通である。また特殊なもの
としては有機硅素化合物のハ分解により微粒状の炭化硅
素を得る方法も提案されている。It is made by adding a sintering aid such as A11, molding and firing. These silicon carbides are usually produced by a reaction between S i 02 and C. In addition, as a special method, a method of obtaining fine particulate silicon carbide by halogen decomposition of an organic silicon compound has also been proposed.
ダイヤモンド膜は特公昭５９−２７７５３ 、特公昭５
９−２７７５４などに開示されている熱フイラメント法
、マイクロ波プラズマＣＶＤ法を筆頭に数多くの方法で
得られている。この場合の膜を析出させる基板にはシリ
コン単結晶ウェハーが最も多く用いられている。この外
にもモリブデン、タングステン、金、銀、銅などの金属
基板の外、石英ガラス、アルミナ、炭化硅素などのセラ
ミックス基板にもダイヤモンド膜が析出することが知ら
れている。複合材をそのまま利用するものとしては例え
ば超硬工具材上にダイヤモンド膜をつけて切削工具に使
用する方法も提案されている。The diamond film was produced by Special Publication No. 59-27753 and Special Publication No. 59-27753.
It can be obtained by a number of methods, including the thermal filament method and the microwave plasma CVD method disclosed in Japanese Patent No. 9-27754. In this case, a silicon single crystal wafer is most often used as the substrate on which the film is deposited. In addition to this, it is known that diamond films are deposited on metal substrates such as molybdenum, tungsten, gold, silver, and copper, as well as on ceramic substrates such as quartz glass, alumina, and silicon carbide. As a way to use composite materials as they are, for example, a method has been proposed in which a diamond film is applied to a carbide tool material and used as a cutting tool.
［発明が解決しようとする課題］
ダイヤモンド膜は切削材として優れており、例えばこれ
を用いてアルミ合金を加工すると仕上げ面が超硬合金製
切削工具による加工面よりも良好である。[Problems to be Solved by the Invention] A diamond film is excellent as a cutting material, and for example, when an aluminum alloy is machined using it, the finished surface is better than a surface machined with a cemented carbide cutting tool.
またダイヤモンド膜は硬度が＾く、摩擦係数は小さく耐
食性に優れていることから機械材料としてメカニカルシ
ールに使用される。Diamond film is also used as a mechanical material for mechanical seals because of its hardness, low coefficient of friction, and excellent corrosion resistance.
いずれの場合もダイヤモンド膜自体は薄く強度が弱いの
でこれを補強する基材が必要である。In either case, the diamond film itself is thin and weak, so a base material is required to reinforce it.
炭化硅素（Ｓ ｉ Ｃ）焼結体にはダイヤモンド膜が密
着性よくつけられることから、ＳｉＣ焼結体の基材にダ
イヤモンドを被覆した複合体（以下「ダイヤ／Ｓ ｉ
ＣｋＳ２合体」と略記）からなる切削工具やメカニカル
シールの実用化が試みられている。Since a diamond film can be applied with good adhesion to silicon carbide (S i C) sintered bodies, composites in which the base material of SiC sintered bodies is coated with diamond (hereinafter referred to as ``Diamond/S i C'')
Attempts have been made to commercialize cutting tools and mechanical seals made of CkS2 (abbreviated as "CkS2 combination").
しかし従来のＳｉＣ焼結体によるダイヤ／ＳｉＣ複五よ
切削工具として使用した場合、前記したように加工面は
良好であるが、工具とじての寿命が超硬合金工具より著
しく短かいという欠点がある。これはダイヤモンド膜と
基材の界面における剥離が原因である。従来のＳｉＣ焼
結体は焼結助剤が使用されているので、これらの不純物
がこの剥離に関係していると思われる。However, when used as a cutting tool using a conventional diamond/SiC sintered body, the machined surface is good as described above, but the tool life is significantly shorter than that of a cemented carbide tool. be. This is caused by peeling at the interface between the diamond film and the base material. Since sintering aids are used in conventional SiC sintered bodies, these impurities are thought to be related to this peeling.
また焼結助剤を含むＳｉＣ焼結体は腐食性の液体中での
耐食性も十分でない。Furthermore, the SiC sintered body containing the sintering aid does not have sufficient corrosion resistance in corrosive liquids.
本発明の目的は切削工具として寿命が長く、耐食性にも
優れたダイヤ／ＳｉＣｍ合体を提供することにある。An object of the present invention is to provide a diamond/SiCm combination that has a long life as a cutting tool and has excellent corrosion resistance.
［課題を解決するための手段］
化学気相蒸着法によれば、高純度の立方晶炭化硅素（以
下「β−５ｉＣＪと略記）の膜が得られる。膜を析出さ
せる基材には通常等方性黒鉛が用いられる。β−５ＥＣ
の化学気相蒸着法には、様々な公知の方法がある。例え
ば、黒鉛基材をＳｉＯ及びＣＯ雰囲気中で１６００〜２
０（１０℃に加熱すれば黒鉛表層はβ−８ＩＣ化する。[Means for solving the problem] According to the chemical vapor deposition method, a film of highly pure cubic silicon carbide (hereinafter abbreviated as "β-5iCJ") can be obtained. Orthogonal graphite is used.β-5EC
There are various known chemical vapor deposition methods. For example, a graphite base material with a temperature of 1600 to 2
0 (If heated to 10°C, the graphite surface layer becomes β-8IC.
また、Ｓ ｉＣ１４等のハロゲン化硅素とＣ３Ｈ８等の
炭化水素とをＨ２をキャリヤガスとして流し、黒鉛基材
を１５００℃程度に加熱してもβ−８ＩＣの膜が析出す
る。β−８ｉＣ膜を０立化するのに十分なだけの膜厚を
確保してから空気中または酸素雰囲気中でおよそ８００
℃以上に加熱すれば黒鉛基材は酸化消耗する。こうして
黒鉛を完全に除去すればβ−３ＬＣだけで形成された基
材か残る。Further, even if a silicon halide such as SiC14 and a hydrocarbon such as C3H8 are passed through with H2 as a carrier gas and the graphite base material is heated to about 1500° C., a β-8IC film is precipitated. After securing a film thickness sufficient to bring the β-8iC film to zero, it is heated approximately 800 ml in air or oxygen atmosphere.
If heated above ℃, the graphite base material will be oxidized and consumed. If graphite is completely removed in this way, a base material formed only of β-3LC remains.
本発明はこのβ−８ｉＣ基村上に析出させたダイヤモン
ド膜は高純度であり、従来のＳｉＣ焼結体よりもダイヤ
モンド膜との密着強度が優れていることの発見に基づく
ものである。The present invention is based on the discovery that the diamond film deposited on this β-8iC substrate has high purity and has superior adhesion strength to the diamond film compared to conventional SiC sintered bodies.
即ち、本発明は化学気相蒸着法（以下ＣＶＤという）に
よるβ−８ｉＣ多結晶焼結体からなる基材にダイヤモン
ド膜を被覆したダイヤ／ Ｓ ｉ Ｃ複合体である。That is, the present invention is a diamond/S i C composite in which a diamond film is coated on a base material made of a β-8iC polycrystalline sintered body by chemical vapor deposition (hereinafter referred to as CVD).
β−５ｉＣ基材の厚さは０．１ｐ以上、密度は３゜２ｚ
／−以上であることが好ましい。またα−５ｉＣ以外の
不純物は５０ｐｐ■以ドであることが好ましい。モして
β−５ＩＣの中にｔｏｆｆｉｆｆｉ９６以ド程度であれ
ばα−５ｉＣが含まれていてもよい。The thickness of the β-5iC base material is 0.1p or more, and the density is 3°2z
It is preferable that it is /- or more. Further, it is preferable that the amount of impurities other than α-5iC is 50 ppm or less. Furthermore, α-5iC may be included in β-5IC as long as it is about toffiffi96 or higher.
またダイヤモンド膜は切削工具やメカニカルシールに用
いられたときの性能あるいは生産性を考慮して０．０１
〜１０００ｍの範囲とすることが好ましい。In addition, considering the performance or productivity when using diamond film for cutting tools and mechanical seals,
It is preferable to set it as the range of -1000m.
基材であるβ−５ｉＣ焼結体のダイヤモンド被覆は基材
の全面あるいは片面、または用途により必要な部分のみ
とすることも可能である。The diamond coating of the β-5iC sintered body, which is the base material, can be applied to the entire surface or one side of the base material, or only to a necessary part depending on the application.
基材をダイヤモンド膜で被覆するにはマイクロ波プラズ
マＣＶＤ法、熱フイラメントＣＶＤ法、高周波ＣＶＤ法
など公知の方法が用いられる。Known methods such as microwave plasma CVD, hot filament CVD, and high frequency CVD can be used to coat the substrate with a diamond film.
［作 用］
化学気相蒸着で得られるβ−５ｉＣは、立方晶の結晶構
造を有しており、通常の条件で合成されるダイヤモンド
膜の結晶構造と一致する。また、β−５ｉＣの格子定数
は４．３６０人でシリコンの５．４３０人よりもダイヤ
モンドの３．５６７人に近い。[Function] β-5iC obtained by chemical vapor deposition has a cubic crystal structure, which matches the crystal structure of a diamond film synthesized under normal conditions. Furthermore, the lattice constant of β-5iC is 4.360, which is closer to 3.567 of diamond than to 5.430 of silicon.
従って、β−５ｉＣ基板とダイヤモンド膜との界面のミ
スマツチは、非常に小さい。Therefore, the mismatch at the interface between the β-5iC substrate and the diamond film is very small.
本発明で用いるβ−５ｉＣの熱膨張係数はｔｏ（１〜１
０００℃の範囲の・１之均値で４ Ｘ １０−６秀し℃
程度である。これは純タングステンに近い値であり、市
販の超硬合金の値Ｃ５Ｘ ｔｏ−’聾し℃）よりも小さ
い。従って、ダイヤモンド被覆工具として使用する際問
題となる熱応力は、超硬合金より小さくなる。The thermal expansion coefficient of β-5iC used in the present invention is to (1 to 1
Average value of 4 x 10-6 in the range of 000°C
That's about it. This value is close to that of pure tungsten and is smaller than the value of commercially available cemented carbide (C5X to 'deafness °C). Therefore, the thermal stress that becomes a problem when used as a diamond-coated tool is smaller than that of cemented carbide.
本発明で用いるβ−５ｉＣ基材中の不純物量は、５０ｐ
ｐｍ以下と極めて高純度である。ダイヤモンド膜を析出
させても界面に密着強度を低ドさせる不純物の析出がほ
とんど起こらない。The amount of impurities in the β-5iC base material used in the present invention is 50p
It has extremely high purity, below pm. Even when a diamond film is deposited, impurities that reduce adhesion strength are hardly precipitated at the interface.
以上述べてきたように本発明で用いる基材は結晶構造上
及び熱膨張係数上のミスマツチが少なく、かつ界面の不
純物量が著しく少ない。このゆえ、ダイヤモンド膜と基
材との密着強度は極めて大きく、切削工具としての寿命
が従来の超硬合金基材品よりも著しく伸びるのである。As described above, the base material used in the present invention has little mismatch in crystal structure and coefficient of thermal expansion, and has a significantly low amount of impurities at the interface. Therefore, the adhesion strength between the diamond film and the base material is extremely high, and the life of the cutting tool is significantly longer than that of conventional cemented carbide base materials.
また耐食性に影響するＢ、Ａ１等が含まれてないので耐
食性がよい。Also, since it does not contain B, A1, etc. that affect corrosion resistance, it has good corrosion resistance.
［実施例１］
５５龍角の等方性黒鉛（東洋炭素■製、 ＩＧ−１１
０）ブロック上に、化学気相蒸着法で膜厚６龍のβ−８
ｉ Ｃ＠を形成させた。原料ガスにはＳ Ｉ ＣＩＩ
４を用い、（１：８Ｈ８の炭化水素をキャリヤガスとし
て用いた。基材温度は１５２０℃、ガス流量は０．９Ｊ
／ｓｉｎである。この基材から切断及び空気中で８００
℃に加熱する酸化処理によって膜厚６■、５５−−角の
β−８ＥＣ多結晶板を得た。これを加工して、外径５０
ｅｓ＋、内径３ｋｍのドーナツ状部品を作製した。[Example 1] 55 Ryukaku isotropic graphite (manufactured by Toyo Tanso ■, IG-11
0) A film of β-8 with a thickness of 6× is deposited on the block using chemical vapor deposition.
iC@ was formed. SICII for raw material gas
4, (1:8H8 hydrocarbon was used as the carrier gas. The substrate temperature was 1520 °C, and the gas flow rate was 0.9 J.
/sin. Cut from this base material and 800 min in air.
A β-8EC polycrystalline plate having a film thickness of 6 cm and a 55-square angle was obtained by oxidation treatment by heating to a temperature of .degree. Machining this, the outer diameter is 50
es+, a donut-shaped part with an inner diameter of 3 km was produced.
この部品の全面を、熱フイラメントＣＶＤ法により膜厚
５０−のダイヤモンド膜で被覆した。熱フイラメントＣ
ＶＤ法による被覆は、エタノールガスを１ｖｏ１．％含
んだ水素ガスをｇｏｓｃ諜伝し、圧力を３０Ｔｏｒｒｑ
基材温度を８１０℃に保って行なった。The entire surface of this part was coated with a 50-thick diamond film by hot filament CVD. heat filament C
Coating by the VD method uses 1 vol. of ethanol gas. % of hydrogen gas was introduced into the gosc, and the pressure was increased to 30 Torrq.
The substrate temperature was maintained at 810°C.
被覆した全表面を機械的に研磨し、テフロンベローズ型
メカニカルシールの固定環を得た。この固定環に適合す
るシールリングを同様の方法で作製し、９０℃、 ｌ（
Ｎの塩酸を循環させるポンプに適用したところ、８００
００時間を越えても、何らの異常もなかった。メカニカ
ルシール部品のみを取り出したところ、表面には何らの
損傷もなく、重量変化も検出されなかった。The entire coated surface was mechanically polished to obtain a fixed ring of a Teflon bellows type mechanical seal. A seal ring suitable for this fixed ring was made in the same manner, and heated at 90°C (
When applied to a pump that circulates N hydrochloric acid, 800
There were no abnormalities even after 00 hours. When only the mechanical seal parts were taken out, there was no damage to the surface and no change in weight was detected.
同一条件でＣ，Ｂを助剤としたα−５ｉＣ焼結体製のメ
カニカルシールを用いたところ２０００時間でシールが
できなくなった。また、Ｃ，Ｂを助剤としたα−５ｉＣ
焼結体をダイヤモンド被覆した場合には、１０００時間
でダイヤモンド膜が剥離し、シールができなくなった。When a mechanical seal made of α-5iC sintered body using C and B as auxiliaries was used under the same conditions, the seal could no longer be formed after 2000 hours. In addition, α-5iC with C and B as auxiliaries
When the sintered body was coated with diamond, the diamond film peeled off after 1000 hours, making it impossible to seal.
［実施例２コ
１００ ｍｍ角、厚さ１０ｍｍの等方性黒鉛（東洋炭素
■製、 ＩＧ−１１０）の板を、ＳｉＯ及びＣＯ雰囲
気中で１７００℃に加熱して厚さ２−ＩＩのβ−５ｔＣ
多結晶板を得た。この板から、ノーズ半径０．２５＋ａ
ｍ、すくい角ｌＯ°のバイト部品を切り出した。このバ
イト部品のすくい面及び逃は面に水素とメタンの混合ガ
スを用いた熱フイラメントＣＶＤ法で膜厚１５０ ｔａ
ｎのダイヤモンド膜をつけた。このダイヤモンド膜の表
面を研磨してノーズ半径０．３報、刃先内約９０″、す
くい角ｌＯ″のダイヤモンド膜からなる刃先を得た。こ
のバイトの刃面の反対側に蒸着によりチタンを、その上
に銅のメタライズ層を形成させてからシャンク（鋼）に
銀ろうで固定した。このバイトを用いて切削テストを行
なった。[Example 2] A 100 mm square, 10 mm thick plate of isotropic graphite (IG-110 manufactured by Toyo Tanso ■) was heated to 1700°C in an SiO and CO atmosphere to form a β of 2-II thickness. -5tC
A polycrystalline plate was obtained. From this plate, nose radius 0.25+a
A tool part with a rake angle of lO° was cut out. The rake face and escape face of this bit part were coated with a film thickness of 150 ta by hot filament CVD using a mixed gas of hydrogen and methane.
A diamond film of n is attached. The surface of this diamond film was polished to obtain a cutting edge made of the diamond film with a nose radius of 0.3mm, an inside of the cutting edge of about 90'', and a rake angle of 10''. Titanium was deposited on the opposite side of the blade surface of this cutting tool, and a copper metallized layer was formed on top of that, and then fixed to the shank (steel) with silver solder. A cutting test was conducted using this tool.
空気軸受スピンドルに直径１２０ｍｍ、幅１５ｍｍの被
削材を取り付け、空気軸受スライドテーブルに試作バイ
トを固定した。被削材には無酸素銅を用いた。切削距離
９０１ａａを越えたところですくい面に５０ｍｍのくぼ
みが現われた。A workpiece with a diameter of 120 mm and a width of 15 mm was attached to an air bearing spindle, and a prototype cutting tool was fixed to an air bearing slide table. Oxygen-free copper was used as the work material. A 50 mm depression appeared on the rake face after the cutting distance of 901 aa was exceeded.
一方、天然の単結晶ダイヤモンドを前記試作品と同一の
形状に加工して得られる単結晶バイト（すくい面（１１
０）面）を、前記と同一条件で切削テストしたところ、
切削圧１！ｌｔ８８ｋｍを越えたところですくい面に５
０ｎｗのくぼみが現われた。On the other hand, a single crystal cutting tool (rake face (11
0) surface) was subjected to a cutting test under the same conditions as above.
Cutting pressure 1! 5 on the rake face after passing lt88km.
A depression of 0nw appeared.
以上より、本試作品は単結晶バイトと同等の性能を有す
ることが判明した。From the above, it was found that this prototype had the same performance as a single-crystal cutting tool.
［効 果］
本発明によればダイヤモンド膜の剥離が起こらず、長寿
命のメカニカルシールや切削工具を得ることができる。[Effects] According to the present invention, a diamond film does not peel off, and a long-life mechanical seal or cutting tool can be obtained.
ダイヤモンド被覆によって、１１１結晶のダイヤモンド
と同等の硬度、化学的耐食性、低摩擦性が得られるので
、本発明品は天然ダイヤモンド製のものより安価である
。Since the diamond coating provides hardness, chemical corrosion resistance, and low friction properties equivalent to those of 111-crystalline diamond, the product of the present invention is less expensive than those made of natural diamond.
従って本発明は産業的に極めて有用である。Therefore, the present invention is extremely useful industrially.
代 理 人teenager Reason Man
Claims (4)
からなる基材にダイヤモンド膜を被覆してなるダイヤモ
ンド炭化硅素複合体。(1) A diamond silicon carbide composite formed by coating a diamond film on a base material made of polycrystalline cubic silicon carbide by chemical vapor deposition.
厚さが０．０１〜１０００μｍである請求項１記載のダ
イヤモンド炭化硅素複合体。(2) The diamond silicon carbide composite according to claim 1, wherein the base material has a thickness of 0.1 μm or more, and the diamond film has a thickness of 0.01 to 1000 μm.
のダイヤモンド炭化硅素複合体。(3) The diamond silicon carbide composite according to claim 1 or 2, which is used for a mechanical seal.
モンド炭化硅素複合体。(4) The diamond silicon carbide composite according to claim 1 or 2, which is used in a cutting tool.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30833188A JPH02192483A (en) | 1988-12-06 | 1988-12-06 | Diamond silicon carbide composite |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30833188A JPH02192483A (en) | 1988-12-06 | 1988-12-06 | Diamond silicon carbide composite |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02192483A true JPH02192483A (en) | 1990-07-30 |
Family
ID=17979769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30833188A Pending JPH02192483A (en) | 1988-12-06 | 1988-12-06 | Diamond silicon carbide composite |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02192483A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5909879A (en) * | 1993-03-09 | 1999-06-08 | Norton Company | Diamond film coating for mating parts |
| US6045029A (en) * | 1993-04-16 | 2000-04-04 | Baker Hughes Incorporated | Earth-boring bit with improved rigid face seal |
| US6209185B1 (en) | 1993-04-16 | 2001-04-03 | Baker Hughes Incorporated | Earth-boring bit with improved rigid face seal |
| CN103659211A (en) * | 2013-12-20 | 2014-03-26 | 上海现代先进超精密制造中心有限公司 | Method for machining silicon carbide blade |
| CN113151898A (en) * | 2021-02-18 | 2021-07-23 | 北京科技大学 | Preparation method of embedded diamond-based silicon carbide composite substrate |
-
1988
- 1988-12-06 JP JP30833188A patent/JPH02192483A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5909879A (en) * | 1993-03-09 | 1999-06-08 | Norton Company | Diamond film coating for mating parts |
| US6045029A (en) * | 1993-04-16 | 2000-04-04 | Baker Hughes Incorporated | Earth-boring bit with improved rigid face seal |
| US6209185B1 (en) | 1993-04-16 | 2001-04-03 | Baker Hughes Incorporated | Earth-boring bit with improved rigid face seal |
| CN103659211A (en) * | 2013-12-20 | 2014-03-26 | 上海现代先进超精密制造中心有限公司 | Method for machining silicon carbide blade |
| CN103659211B (en) * | 2013-12-20 | 2016-04-06 | 上海现代先进超精密制造中心有限公司 | A kind of method of processing silicon carbide blade |
| CN113151898A (en) * | 2021-02-18 | 2021-07-23 | 北京科技大学 | Preparation method of embedded diamond-based silicon carbide composite substrate |
| CN113151898B (en) * | 2021-02-18 | 2021-10-15 | 北京科技大学 | Preparation method of embedded diamond-based silicon carbide composite substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6406776B1 (en) | Surface functionalized diamond crystals and methods for producing same | |
| JPH0535221B2 (en) | ||
| JPH01103266A (en) | Coated oxidation-resistant porous abrasive molded form and manufacture thereof | |
| EP1709136B1 (en) | Coated abrasives | |
| JP3384110B2 (en) | Coated cutting tool and its manufacturing method | |
| JPH03197677A (en) | Diamond-coated tool and its production | |
| JPS6353269A (en) | Cutting tool tip made of diamond coated tungsten carbide-base sintered hard alloy | |
| JPH02192483A (en) | Diamond silicon carbide composite | |
| JPH0568548B2 (en) | ||
| JPH01162770A (en) | Diamond-coated member | |
| JPS61291493A (en) | Diamond coated hard material | |
| JPH04157157A (en) | Production of artificial diamond coated material | |
| JPH01157412A (en) | Substrate with diamond film | |
| JP2595203B2 (en) | High adhesion diamond coated sintered alloy and method for producing the same | |
| JP2794111B2 (en) | Diamond coated cutting tool | |
| JPS62107067A (en) | Diamond coated cutting tool | |
| JPH0710443B2 (en) | Cutting tip | |
| JPH07153370A (en) | Discharge tube | |
| JPH1053871A (en) | Diamond-coated carbon member | |
| JPH01208381A (en) | Ain coated silicon nitride base cutting tool | |
| JPH01259171A (en) | Cutting tool member coated with hard film | |
| JP2844934B2 (en) | Manufacturing method of gas-phase synthetic diamond coated cutting tool | |
| JPH05125542A (en) | Manufacture of thin diamond film tool | |
| JPH01225774A (en) | High-hardness polycrystalline diamond tool | |
| JPS6345372A (en) | Cutting tool tip made of diamond-coated tungsten carbide-base sintered hard alloy |