JPH021911A - Removing device for organic film - Google Patents
Removing device for organic filmInfo
- Publication number
- JPH021911A JPH021911A JP14375088A JP14375088A JPH021911A JP H021911 A JPH021911 A JP H021911A JP 14375088 A JP14375088 A JP 14375088A JP 14375088 A JP14375088 A JP 14375088A JP H021911 A JPH021911 A JP H021911A
- Authority
- JP
- Japan
- Prior art keywords
- ozone
- ultraviolet rays
- semiconductor wafer
- semiconductor wafers
- ultraviolet ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical group [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 2
- 230000032258 transport Effects 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 238000000354 decomposition reaction Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は半導体ウェハ等の基板に付着した有機被膜の除
去装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an apparatus for removing an organic film attached to a substrate such as a semiconductor wafer.
（従来の技術）
半導体ウェハ等の有機被膜を除去する方法としては、従
来より紫外線を半導体ウェハに当てる方法と、オゾンＯ
１を当てる方法がある。(Prior art) Conventional methods for removing organic coatings from semiconductor wafers, etc. include exposing semiconductor wafers to ultraviolet rays and ozone O
There is a way to guess 1.
紫外線の場合は、空気中の酸素０２に紫外線を当ててオ
ゾン０３を発生させ、かつ異なる波長の紫外線によりオ
ゾン０３を自己分解（０３→０°＋０□）させ、発生ラ
ジカル０°（酸素）と有機物との結合効果により、有機
被膜の除去を行っており、また、オゾン０．を直接有機
被膜に当てる方法では、既にオゾン０３が存在するため
、オゾンＯ３の自己分解を加熱により行っている。In the case of ultraviolet rays, ozone 03 is generated by applying ultraviolet rays to oxygen 02 in the air, and ozone 03 is self-decomposed (03 → 0° + 0□) by ultraviolet rays of different wavelengths, and the generated radicals 0° (oxygen) and The organic film is removed due to the bonding effect with organic substances, and ozone is 0. In the method of applying directly to the organic film, since ozone O3 is already present, the ozone O3 is self-decomposed by heating.
（発明が解決しようとする課題）
前記紫外線を当てる方法と、オゾン０３を当てる方法と
も優れた技術であるが、両者の長所を組み合わせれば、
より効果があることは明白であるが、今まで、このよう
な装置は従来見当らなかった。(Problem to be solved by the invention) Both the method of applying ultraviolet rays and the method of applying ozone 03 are excellent techniques, but if the advantages of both are combined,
Although it is clear that it is more effective, until now such a device has not been found in the past.
また、紫外線と半導体ウェハ間の距離については、距離
を近づければ除去速度が速まることは知られているもの
の、どの程度にすれば良いか明確にされていなかったた
め、十分な除去効果が得られなかった。Furthermore, regarding the distance between the ultraviolet rays and the semiconductor wafer, although it is known that the removal speed will be faster if the distance is brought closer, it has not been clarified to what extent the distance should be set, so a sufficient removal effect cannot be obtained. There wasn't.
本発明の目的は、紫外線とオゾン０３を利用し、かつ、
半導体ウェハと紫外線間の距離を適正な距離にすること
により、オゾンＯＪの自己分解を効率良く行い、より除
去効果の優れた半導体ウェハ等の有機被膜の除去装置を
提供することにある。The purpose of the present invention is to utilize ultraviolet rays and ozone 03, and
It is an object of the present invention to provide an apparatus for removing organic films on semiconductor wafers, etc., which efficiently self-decomposes ozone OJ by setting the distance between the semiconductor wafer and ultraviolet rays to an appropriate distance, and which has a more excellent removal effect.
（課題を解決するための手段） 上記目的を達成するために１本発明においては。 (Means for solving problems) In order to achieve the above object, one aspect of the present invention is as follows.
オゾン０３を発生させるオゾン発生装置とオゾンＯ１を
半導体ウェハ表面に導くためのオゾン供給管と、紫外線
によりオゾン０３の自己分解を促進させ、半導体ウェハ
表面の有機物とラジカル酸素の結合を行うオゾン処理室
と装置カバーと有機物とラジカル酸素とが結合した物質
を外部に出すための排ガス管と半導体ウェハの搬送を行
う搬送装置とを有し、かつ、紫外線と半導体ウェハ間の
距離を２〜３■以下とすることを特徴とする紫外線とオ
ゾンを利用した有機被膜の除去装置を提供する。An ozone generator that generates ozone 03, an ozone supply pipe that guides ozone O1 to the semiconductor wafer surface, and an ozone treatment chamber that promotes the self-decomposition of ozone 03 with ultraviolet rays and combines organic matter on the semiconductor wafer surface with radical oxygen. , a device cover, an exhaust gas pipe for discharging the combined organic matter and radical oxygen, and a transport device for transporting the semiconductor wafer, and the distance between the ultraviolet rays and the semiconductor wafer is 2 to 3 cm or less. To provide an organic coating removal device using ultraviolet rays and ozone, which is characterized by:
（作 用）
このように構成された装置においては、オゾン０３はオ
ゾン発生装置より十分に供給できる６また。(Function) In the device configured as described above, ozone 03 can be sufficiently supplied from the ozone generator.
紫外線によるオゾン０３の自己分解促進機能もそのまま
利用できるため、有機物と結合するラジカル酸素の発生
が効率よく行なわれることになる。Since the function of promoting self-decomposition of ozone 03 by ultraviolet rays can be used as is, radical oxygen that combines with organic matter is efficiently generated.
また、半導体ウェハと紫外線との距離を２〜３１以下と
することにより、より効果的に有機物の除去が可能とな
る。Further, by setting the distance between the semiconductor wafer and the ultraviolet rays to 2 to 31 cm or less, organic substances can be removed more effectively.
（実施例） 以下本発明の一実施例を図面において説明する。(Example) An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例の構成図である。FIG. 1 is a block diagram of an embodiment of the present invention.
オゾン発生装置１、オゾン供給管２、オゾン処理室３．
紫外線４、装置カバー５、排ガス管６、半導体ウェハ７
、搬送装置８から構成されている。Ozone generator 1, ozone supply pipe 2, ozone treatment chamber 3.
Ultraviolet rays 4, equipment cover 5, exhaust gas pipe 6, semiconductor wafer 7
, and a transport device 8.
オゾン発生装置１よりオゾン０３を放出し、オゾン供給
管２を通って、オゾン処理室３の中で、紫外線４により
オゾン０３の自己分解が促進されラジカル酸素が発生す
ることにより、半導体ウェハ５の表面の有機被膜と結合
し、揮発性のＣＯ，，８２０等に変化したものを、排ガ
ス管７より排出するものである。紫外線４と半導体ウェ
ハ５の距離は、近いほど効果はあるが、２〜３】以下が
適当である。Ozone 03 is emitted from the ozone generator 1, passes through the ozone supply pipe 2, and enters the ozone treatment chamber 3. The self-decomposition of the ozone 03 is promoted by ultraviolet rays 4, and radical oxygen is generated, so that the semiconductor wafer 5 is What is combined with the organic film on the surface and changed into volatile CO, 820, etc. is discharged from the exhaust gas pipe 7. The closer the distance between the ultraviolet rays 4 and the semiconductor wafer 5, the more effective it is, but the appropriate distance is 2-3] or less.
また、半導体ウェハ５は、搬送装置８により、移動また
は回転させることにより、生産性を上げることができる
。Further, by moving or rotating the semiconductor wafer 5 using the transport device 8, productivity can be increased.
第２図は本発明の応用例で、紫外線４の照射面積を大き
くするため、紫外線４を搬送装置８に対して平行に設置
し、紫外線４と半導体ウェハ５の距離りは同様に２〜３
ａｍ以下としたもので、有機被膜の除去効果は同等の効
果が得られる。FIG. 2 shows an application example of the present invention. In order to increase the irradiation area of the ultraviolet rays 4, the ultraviolet rays 4 are installed parallel to the transport device 8, and the distance between the ultraviolet rays 4 and the semiconductor wafer 5 is similarly 2 to 3.
am or less, the same effect of removing the organic film can be obtained.
以上詳述したように本発明によれば、紫外線とオゾンを
利用した有機被膜の除去装置の利点をそのまま生かし、
かつ紫外線と半導体ウェハ間の距離を２〜３ａｉ以下と
することにより有機物の除去効果をさらに高めることが
できる。As detailed above, according to the present invention, the advantages of the organic film removal device using ultraviolet rays and ozone can be utilized as is,
In addition, by setting the distance between the ultraviolet rays and the semiconductor wafer to 2 to 3 ai or less, the effect of removing organic matter can be further enhanced.
第１図は本発明の一実施例を示す除去装置の断面図、第
２図は他の実施例を示す断面図である。
１・・・オゾン発生装置
２・・・オゾン供給管
３・・・オゾン処理室
４・・・紫外線
５・・・装置カバー
６・・・排ガス管
７・・・半導体ウェハ
８・・・搬送装置FIG. 1 is a sectional view of a removal device showing one embodiment of the present invention, and FIG. 2 is a sectional view showing another embodiment. 1... Ozone generator 2... Ozone supply pipe 3... Ozone treatment chamber 4... Ultraviolet rays 5... Device cover 6... Exhaust gas pipe 7... Semiconductor wafer 8... Transport device
Claims (1)
生するオゾン発生装置と、このオゾン発生したオゾンガ
スを供給するオゾン供給管と、このオゾン供給管を導入
したオゾン処理室と、前記半導体ウェハと１乃至３ｃｍ
の距離に設置された紫外線照射装置とを具備してなる有
機被膜の除去装置。A transport device that transports a substrate of a semiconductor wafer, an ozone generator that generates ozone, an ozone supply pipe that supplies the ozone gas generated, an ozone processing chamber into which the ozone supply pipe is introduced, and the semiconductor wafer and 1. ~3cm
An organic film removal device comprising: an ultraviolet irradiation device installed at a distance of
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14375088A JPH021911A (en) | 1988-06-13 | 1988-06-13 | Removing device for organic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14375088A JPH021911A (en) | 1988-06-13 | 1988-06-13 | Removing device for organic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH021911A true JPH021911A (en) | 1990-01-08 |
Family
ID=15346146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14375088A Pending JPH021911A (en) | 1988-06-13 | 1988-06-13 | Removing device for organic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH021911A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04234437A (en) * | 1990-10-04 | 1992-08-24 | Internatl Business Mach Corp <Ibm> | Manufacture of metal/organic polymer composite |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61290724A (en) * | 1985-06-19 | 1986-12-20 | Hitachi Ltd | Method and apparatus for treating wafer |
| JPH0496530A (en) * | 1990-08-13 | 1992-03-27 | Toyota Central Res & Dev Lab Inc | Method and apparatus for detecting position |
| JPH05264709A (en) * | 1992-03-17 | 1993-10-12 | Clarion Co Ltd | Moving object sighting apparatus |
-
1988
- 1988-06-13 JP JP14375088A patent/JPH021911A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61290724A (en) * | 1985-06-19 | 1986-12-20 | Hitachi Ltd | Method and apparatus for treating wafer |
| JPH0496530A (en) * | 1990-08-13 | 1992-03-27 | Toyota Central Res & Dev Lab Inc | Method and apparatus for detecting position |
| JPH05264709A (en) * | 1992-03-17 | 1993-10-12 | Clarion Co Ltd | Moving object sighting apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04234437A (en) * | 1990-10-04 | 1992-08-24 | Internatl Business Mach Corp <Ibm> | Manufacture of metal/organic polymer composite |
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