JPH02185968A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPH02185968A JPH02185968A JP522689A JP522689A JPH02185968A JP H02185968 A JPH02185968 A JP H02185968A JP 522689 A JP522689 A JP 522689A JP 522689 A JP522689 A JP 522689A JP H02185968 A JPH02185968 A JP H02185968A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- backing plate
- sputtered
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 3
- 238000005477 sputtering target Methods 0.000 claims description 19
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 12
- 239000012535 impurity Substances 0.000 abstract description 7
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はスパッタ装置に関し、特にスパッタ用ターゲッ
ト、カソードの構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a sputtering apparatus, and particularly to the structure of a sputtering target and a cathode.
従来の技術 金属や絶縁物の成膜方法として、ＤＣスパッタ。Conventional technology DC sputtering is a method for forming films of metals and insulators.
ＲＦスパッタ法は公知である。このような従来のスパッ
タ川カソードの構造を第２図で説明する。RF sputtering is well known. The structure of such a conventional sputtered river cathode will be explained with reference to FIG.
ｌはスパッタ用ターゲット、２はシールド部材スパッタ
用ターゲット１の上面とシールド部材２との距離は２鴫
以下程度である、３はバッキングプレート、４は永久磁
石Ｎ極、５は永久磁石Ｓ極、６はＯリング、７はスパッ
タ用ターゲットを接合しているバッキングプレート３の
支持台、８はバッキングプレートを支持台に固定するた
めのネジ、９はスパッタ領域、１０はシールド部材の開
口部、１１はスパッタ用電源である。1 is a sputtering target, 2 is a shield member, the distance between the top surface of the sputtering target 1 and the shield member 2 is about 2 mm or less, 3 is a backing plate, 4 is a permanent magnet north pole, 5 is a permanent magnet south pole, 6 is an O-ring, 7 is a support for the backing plate 3 to which the sputtering target is joined, 8 is a screw for fixing the backing plate to the support, 9 is a sputtering area, 10 is an opening in the shield member, 11 is the power supply for sputtering.
第２図の構成において実際にスパッタする方法を説明す
る。スパッタ装置のチャンバー内を不活性ガス例えばＡ
「ガスの雰囲気にし、ターゲットの上面は永久磁石４．
５によって６１界をかけておき、スパッタ用ターゲット
に負の′電圧、パワーを印加すると、ターゲット上面よ
りターゲットの粒子が飛び出し、スパッタが成される。A method of actually performing sputtering in the configuration shown in FIG. 2 will be explained. The chamber of the sputtering device is filled with an inert gas such as A.
``A gas atmosphere is created, and the top surface of the target is placed under a permanent magnet 4.
When a negative voltage and power are applied to the sputtering target with a 61 field applied by 5, target particles fly out from the upper surface of the target and sputtering is performed.
その飛び出した粒子が、ターゲットｌの上方に設置しで
ある基板に付着し、成膜が成される。The ejected particles adhere to a substrate placed above the target l, forming a film.
発明が解決しようとする課題
スパッタ用ターゲッｌ−１が活性な材料、例えばＺｎＳ
の様な材料の場合、スパッタされた粒子は前記スパッタ
用ターゲ７）１とシールド部材２との間隙をぬってバッ
キングプレート３に付着し、付着した粒子とバッキング
プレート３とが反応し、バッキングプレート３上にスパ
ッタされ易い不純物が形成される。そのバッキングプレ
ート３上に形成された不純物の粒子がスパッタされ、ス
パッタ用ターゲット１とシールド部材２との間隙をぬっ
てスパッタ用ターゲットｌの上面から飛び出しターゲッ
ト上面に設置しである基板に付着し成膜され、良質なス
パック膜が得られなくなるという問題点があった。Problems to be Solved by the Invention Sputtering target l-1 is an active material, such as ZnS.
In the case of a material such as, the sputtered particles pass through the gap between the sputtering target 7) 1 and the shield member 2 and adhere to the backing plate 3, and the attached particles react with the backing plate 3, causing the backing plate to Impurities that are easily sputtered are formed on the surface of the photoresist layer 3. The impurity particles formed on the backing plate 3 are sputtered, pass through the gap between the sputtering target 1 and the shield member 2, fly out from the upper surface of the sputtering target L, and adhere to the substrate placed on the upper surface of the target. There was a problem in that a good quality sppack film could not be obtained.
本発明は、かかる点に鑑みてなされたもので、ｌｅｔを
劣化させる不純物の発生、スパックをなくし良質な１２
形成を行うスパッタ用ターゲット、カソードを提供する
ことを目的としている。The present invention has been made in view of the above points, and eliminates the generation of impurities and spacks that deteriorate the let, and provides high quality 12
The purpose is to provide sputtering targets and cathodes for formation.
課題を解決するための手段
本発明は、上記課題を解決する為、絶縁物でなるスパッ
タ用ターゲットｌの上面の外周全周とシールド部材の前
記ターゲット上面を覆う面の全周とが、全周に渡って接
触させて構成するものである。Means for Solving the Problems In order to solve the above problems, the present invention provides that the entire outer circumference of the upper surface of the sputtering target l made of an insulating material and the entire circumference of the surface of the shield member that covers the upper surface of the target are It is constructed by making contact over the entire area.
作用 この技術的手段による作用は次の様になる。action The effect of this technical means is as follows.
シールド部材のターゲット上面を覆う部分全周がターゲ
ットの上面の外周全周に接触している為、つまりスキマ
がない為、スパッタされた粒子がバッキングプレート３
の上面に付着することなく、シールドリング開口部１０
からの純粋なスパックされた粒子のみをスパッタターゲ
ント１の上方に設置しである基板に付着することができ
るので良質で安定な成膜が可能となる。Since the entire circumference of the part of the shield member that covers the upper surface of the target is in contact with the entire outer circumference of the upper surface of the target, that is, there is no gap, the sputtered particles are transferred to the backing plate 3.
shield ring opening 10 without adhering to the top surface of the
Since only pure spucked particles from the sputter target 1 can be placed above the sputter target 1 and attached to the substrate, it is possible to form a high-quality and stable film.
実施例 以下、本発明の一実施例を図面に基づいて説明する。Example Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図は、本発明の一実施例におけるスパッタ装置の断
正面図である。FIG. 1 is a sectional front view of a sputtering apparatus in an embodiment of the present invention.
第１図において、バッキングプレート３上にスパッタ用
ターゲット１が接合されており、このバッキングプレー
ト３は０リング６を介して支持台７にネジ８で固定され
ている。また、スパッタ領域を限定するためのシールド
部材２がスパッタ用ターゲッ）１の上面の外周全周に渡
って接触させて構成しである。４．５は永久磁石のＮ極
とＳ極であり、スパッタ用ターゲット１の上面に磁界を
発生させるものである。９はスパッタ領域で１０はシー
ルド部材の開口部である。１１はスパッタ用の電源であ
る。In FIG. 1, a sputtering target 1 is bonded onto a backing plate 3, and this backing plate 3 is fixed to a support base 7 with screws 8 via an O-ring 6. Further, a shield member 2 for limiting the sputtering area is in contact with the entire outer circumference of the upper surface of the sputtering target 1. 4.5 is the N pole and S pole of a permanent magnet, which generate a magnetic field on the upper surface of the sputtering target 1. 9 is a sputtering region, and 10 is an opening in the shield member. 11 is a power source for sputtering.
上記の構成において、スパッタ装置のチャンバー内を不
活性ガス例えばＡｒガスの雰囲気にし、絶縁体のスパッ
タ用ターゲッＩ−１の上面を４．５の永久磁石で磁界を
かけ、スパッタ用ターゲット１に１１のスパッタ用電源
によって負の電圧、パワーを印加するとスパッタ用ター
ゲットｌの上面よりターゲットの粒子が飛び出しスパッ
タが成される。In the above configuration, the inside of the chamber of the sputtering apparatus is made into an atmosphere of an inert gas, for example, Ar gas, and a magnetic field is applied to the upper surface of the insulating sputtering target I-1 using a 4.5 mm permanent magnet. When a negative voltage and power are applied by the sputtering power supply, target particles fly out from the upper surface of the sputtering target l and sputtering is performed.
スパッタ用ターゲットｌの上面外周全周とスパッタ用タ
ーゲットｌの上面の外周全周を覆うシールド部材３の全
周とが接触、つまりスキマがない為、スパッタされた粒
子がバッキングプレート３の上面に付着、反応物が形成
されることなく、又、シールド部材開口部１０からのみ
スパッタされるので、常に安定で不純物の付着がない良
質な膜が得られる。不純物の付着による特性バラツキ、
特性劣化は量産時に大きな問題となるが、本発明の構成
を導入する時により容易に解決することができる。Since the entire circumference of the upper surface of the sputtering target l is in contact with the entire circumference of the shield member 3 that covers the entire outer circumference of the upper surface of the sputtering target l, that is, there is no gap, sputtered particles adhere to the upper surface of the backing plate 3. Since no reactants are formed and sputtering is performed only from the shield member opening 10, a stable and high-quality film free from adhesion of impurities is always obtained. Variations in characteristics due to adhesion of impurities,
Although characteristic deterioration becomes a big problem during mass production, it can be easily solved by introducing the configuration of the present invention.
発明の効果
以上述べてきたように、本発明によれば簡易な構成で不
純物の形成、スパッタをなくし、ターゲットの純粋な粒
子のみをスパックすることができ、改質が良好で安定な
成膜を行うことができるターゲット、カソードを提供す
ることができる。Effects of the Invention As described above, according to the present invention, the formation of impurities and spatter can be eliminated with a simple configuration, and only pure particles of the target can be sputtered, resulting in stable film formation with good modification. A target that can be made, a cathode can be provided.
第１図は本発明の一実施例におけるスパッタ装置の断正
面図、第２図は従来のスパッタ装置の断正面図である。
Ｉ・・・・・・スパンタ用り−ゲ７ト、２・・・・・・
シールド部材、３・・・・・・バッキングプレート。
代理人の氏名 弁理士 粟野重孝 はか１名第
図
１１ヌノでツ、り周り
、３久久磁石Ｓ巻
第
図FIG. 1 is a sectional front view of a sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional front view of a conventional sputtering apparatus. I...For Spanta - Ge7to, 2...
Shield member, 3...Backing plate. Name of agent: Patent attorney Shigetaka Awano (1 person) Figure 11 Nuno De Tsu, Tsu, Surroundings, Volume 3 Kuku Magnet Volume S Figure
Claims (1)
キングプレートにボンディング材によって固定した絶縁
物でなるスパッタ用ターゲットの上面の外周全周にシー
ルド部材を接触させてなるスパッタ装置。A sputtering device in which a backing plate is fixed to a cathode body, and a shield member is brought into contact with the entire outer circumference of the upper surface of a sputtering target made of an insulating material fixed to the backing plate with a bonding material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP522689A JPH02185968A (en) | 1989-01-12 | 1989-01-12 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP522689A JPH02185968A (en) | 1989-01-12 | 1989-01-12 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02185968A true JPH02185968A (en) | 1990-07-20 |
Family
ID=11605275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP522689A Pending JPH02185968A (en) | 1989-01-12 | 1989-01-12 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02185968A (en) |
-
1989
- 1989-01-12 JP JP522689A patent/JPH02185968A/en active Pending
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