JPH02174188A - Manufacture of ceramic wiring board - Google Patents
Manufacture of ceramic wiring boardInfo
- Publication number
- JPH02174188A JPH02174188A JP33422488A JP33422488A JPH02174188A JP H02174188 A JPH02174188 A JP H02174188A JP 33422488 A JP33422488 A JP 33422488A JP 33422488 A JP33422488 A JP 33422488A JP H02174188 A JPH02174188 A JP H02174188A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- roughened
- ceramic substrate
- board
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 3
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 abstract description 11
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000007788 roughening Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000001376 precipitating effect Effects 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910017634 NH4F 10 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明はセラミック配線板の製造法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a method of manufacturing a ceramic wiring board.
(従来の技術)
従来セラミック基板の表面に金属被膜、ガラス組成物等
を密着させる方法としては9例えば未焼成のセラミック
基板(セラミックグリーンシート)上に金属被膜を形成
し、これを同時に焼成する同時焼成法、焼成したセラミ
ック基板上にガラス粉と金属粉との混合ペーストを印刷
し、これを焼付ける厚膜印刷焼成法がある。(Prior art) Conventional methods for adhering a metal coating, a glass composition, etc. to the surface of a ceramic substrate include forming a metal coating on an unfired ceramic substrate (ceramic green sheet) and firing the same at the same time. There is a firing method, and a thick film printing and firing method in which a mixed paste of glass powder and metal powder is printed on a fired ceramic substrate and then baked.
(発明が解決しようとする課題)
しかしながら同時焼成法は1弱還元性雰囲気中で150
0〜1600℃の温度で焼成するため作業が煩雑であり
、コスト高となる欠点がある。−方厚膜印刷焼成法は、
金属とセラミック基板との密着はガラスを介して行われ
るため密着力が弱く。(Problem to be solved by the invention) However, the simultaneous firing method
Since the firing is performed at a temperature of 0 to 1600°C, the work is complicated and the cost is high. - The thick film printing and firing method is
The adhesion between the metal and ceramic substrate is done through glass, so the adhesion is weak.
また金属に金、銀、パラジウム等の貴金属を用いるため
コスト高となる欠点がある。Furthermore, since noble metals such as gold, silver, and palladium are used as metals, there is a drawback that the cost is high.
これらの改良として特開昭47−11652号公報8%
開昭54−82666号公報8%開昭58−10407
9号公報等に示される方法がある。これらの方法は、ア
ルミナなどの焼結したセラミックスをフッ酸、水酸化ナ
トリウム等の酸。As an improvement of these, Japanese Patent Application Laid-Open No. 47-11652 8%
Publication No. 54-82666 8% Publication No. 58-10407
There is a method shown in Publication No. 9, etc. These methods treat sintered ceramics such as alumina with acids such as hydrofluoric acid and sodium hydroxide.
アルカリの溶液に浸漬して粗化した後、セラミックスの
表面を感受性化し、さらに活性化処理を行い、銅めつき
、ニッケルめっき等を施してセラミックス上に金属を密
着させるものである。After being roughened by immersion in an alkaline solution, the surface of the ceramic is sensitized, then an activation treatment is performed, and copper plating, nickel plating, etc. are applied to adhere metal onto the ceramic.
しかし上記のような方法では用いる基板の素材に問題が
あり9例えば表面を研磨しないセラミック基板に対して
は、基板の反りが大きく、また表面を研磨したセラミッ
ク基板に対しては、良好な粗化表面が得られず1表面に
密着させた銅、ニッケル等の金属が酸化し易く、セラミ
ック配線板には使用できないという問題がある。However, the above method has problems with the material of the substrate used.9 For example, ceramic substrates whose surfaces are not polished may have a large degree of warpage, and ceramic substrates whose surfaces have been polished may not have good roughness. There is a problem that a surface cannot be obtained and metals such as copper and nickel that are brought into close contact with one surface are easily oxidized and cannot be used for ceramic wiring boards.
本発明は上記の欠点のないセラミック配線板の製造法を
提供することを目的とするものである。The object of the present invention is to provide a method for manufacturing a ceramic wiring board that does not have the above-mentioned drawbacks.
(課題を解決するための手段)
本発明は表面を研磨したセラミック基板を熱処理してガ
ラス質成分をセラミック基板の表面に析出させた後、セ
ラミック基板の表面を粗化し、さらに粗化した面にめっ
きを施して金属被膜を形成し、ついでエツチング法でパ
ターンを形成し、パターンの上面にニッケル層さらにそ
の上面に貴金属層を形成するセラミック配線板の製造法
に関する。(Means for Solving the Problems) The present invention heat-treats a ceramic substrate whose surface has been polished to precipitate a glassy component on the surface of the ceramic substrate, then roughens the surface of the ceramic substrate, and further applies the roughened surface to the surface. The present invention relates to a method of manufacturing a ceramic wiring board, in which a metal film is formed by plating, a pattern is formed by etching, a nickel layer is formed on the top surface of the pattern, and a noble metal layer is formed on the top surface of the nickel layer.
本発明において用いられるセラミック基板としては特に
制限はないが、アルミナセラミック基板を用いることが
好ましい。The ceramic substrate used in the present invention is not particularly limited, but it is preferable to use an alumina ceramic substrate.
セラミック基板の表面を研磨する方法についても特に制
限はなく、従来公知の方法で行うものとする。There are no particular restrictions on the method of polishing the surface of the ceramic substrate, and any conventionally known method may be used.
熱処理は、大気中で行うことが好ましく、また処理温度
はセラミック基板の材質9組成などにより適宜選定され
るが、アルミナセラミック基板の場合、600〜150
0℃の温度で行うことが好ましい。The heat treatment is preferably performed in the atmosphere, and the treatment temperature is appropriately selected depending on the material composition of the ceramic substrate.
Preferably it is carried out at a temperature of 0°C.
セラミック基板の表面を粗化する方法としては特に制限
はな〈従来公知の方法で行うものとする。There are no particular restrictions on the method for roughening the surface of the ceramic substrate; any conventionally known method may be used.
めっき法については特に制限はないが、無電解めっき法
で行うことが好ましい。まためっきで形成される金属と
しては導電性を有するものであれば特に制限はないが、
銅を用いれば安価であるので好ましい。Although there are no particular restrictions on the plating method, it is preferable to use electroless plating. There are no particular restrictions on the metal formed by plating as long as it has conductivity, but
It is preferable to use copper because it is inexpensive.
最外層に形成される貴金属層には金、銀、白金等の貴金
属が用いられる。A noble metal such as gold, silver, or platinum is used for the noble metal layer formed as the outermost layer.
(実施例) 以下本発明の詳細な説明する。(Example) The present invention will be explained in detail below.
実施例1
寸法が270X20+++m、厚さが1.2 vtts
で純度が96%のアルミナセラミック基板(日立化成工
業製、商品名ハロツクス552)の表面を研磨機を用い
て厚さが0.9 wnになるまで研磨し、乾燥後電気炉
に入れ、1200℃まで5℃/分の昇温速度で昇温し、
1200℃で1時間保持後冷却してガラス質成分を析出
させたセラミック基板を得た。Example 1 Dimensions are 270 x 20 +++ m, thickness is 1.2 vtts
The surface of an alumina ceramic substrate (manufactured by Hitachi Chemical Co., Ltd., trade name: Halox 552) with a purity of 96% was polished using a polishing machine to a thickness of 0.9 wn, and after drying, it was placed in an electric furnace and heated at 1200°C. The temperature was raised at a rate of 5°C/min until
After being held at 1200° C. for 1 hour, it was cooled to obtain a ceramic substrate on which glassy components were precipitated.
次に上記で得たセラミック基板を脱脂液(日立化成工業
膜、商品名HCR201)で洗浄し、乾燥後NH4F
10 g(40,5重i%) 、 (NHi)tsO
4Ig(4,1重量%) 、 m H2SO42ml
(14,9重量%)及びHzo 10ml (40,5
重f%)の混合溶液(液温50℃)中に5分間浸漬して
粗化を行った。ついで流水中で十分に水洗し、乾燥後3
50℃に加熱したNaOH融液中に5分間浸漬して再粗
化を行った。その後濃度10%のHzSO4溶液中に5
分間浸漬し、超音波(出力300W)による振動エネル
ギーを付与し、セラミックス表面を中和し、ついで水洗
を行い無電解鋼めっきを3時間行い厚さ7μmの鋼の被
膜を形成した。なお無電解めっき液はpH12,4で第
1表に示す組成のものを用いた。Next, the ceramic substrate obtained above was washed with a degreasing solution (Hitachi Chemical Membrane, trade name: HCR201), and after drying, NH4F
10 g (40.5 weight i%), (NHi)tsO
4Ig (4.1% by weight), m H2SO42ml
(14,9% by weight) and Hzo 10ml (40,5
Roughening was performed by immersing the sample in a mixed solution (liquid temperature: 50° C.) of 50° C. (weight f%) for 5 minutes. Then, rinse thoroughly under running water and dry.
Re-roughening was performed by immersing it in a NaOH melt heated to 50° C. for 5 minutes. After that, 5
The ceramic surface was immersed for 3 minutes, and vibration energy was applied using ultrasonic waves (output 300 W) to neutralize the ceramic surface, followed by washing with water and electroless steel plating for 3 hours to form a steel film with a thickness of 7 μm. The electroless plating solution used had a pH of 12.4 and a composition shown in Table 1.
第1表
めっき後感光性ドライフィルム(日立化成工業膜、商品
名PHT−862F−40)を使用し。Table 1: After plating, a photosensitive dry film (Hitachi Chemical Membrane, trade name PHT-862F-40) was used.
基板両面を塩化第二銅溶液でエツチングして寸法2X2
m+mのパターンを形成し、パターンの上面に無電解ニ
ッケルめつき(日本カニゼン久、商品名S−680)を
10分間行い、厚さ3μmのニッケルの被膜を形成し、
さらにその上面に無電解金めつき(EEJA(イージャ
ー)製、レフトロレスブレツブ〕を20分間行い、厚さ
0.2μmの金の被膜を形成した。Etch both sides of the board with cupric chloride solution to size 2x2.
A m+m pattern was formed, and electroless nickel plating (Nippon Kanizenkyu, trade name S-680) was performed on the top surface of the pattern for 10 minutes to form a nickel film with a thickness of 3 μm.
Furthermore, electroless gold plating (Left Roless Blebbing, manufactured by EEJA) was performed on the upper surface for 20 minutes to form a gold film with a thickness of 0.2 μm.
次KW気的1機械的保護を必要とする部分にソルダーレ
ジスト(アサヒ化学研究所製、商品名Ca−aooLL
)を印刷し、180℃で30分間硬化してセラミック配
線板を得た。Next KW gas 1 Solder resist (manufactured by Asahi Chemical Research Institute, trade name Ca-aooLL) is applied to the parts that require mechanical protection.
) was printed and cured at 180° C. for 30 minutes to obtain a ceramic wiring board.
得られたセラミック配線板20ケを使用し、密着(接着
)強度を測定した。その結果平均で25kg/lan”
の密着強度を示した。また超音波洗浄を30分間行った
が、パターンの剥離は生ぜず良好であった。さらに外観
について観察したが基板の反りも無く、基板の表面粗さ
も3.0〜4.0μm(P−P)と良好な値を示し死。The adhesion (adhesion) strength was measured using 20 of the obtained ceramic wiring boards. As a result, the average was 25kg/lan.”
It showed an adhesion strength of . Further, ultrasonic cleaning was performed for 30 minutes, but the pattern was not peeled off and the result was good. Furthermore, the appearance was observed, and there was no warping of the substrate, and the surface roughness of the substrate was 3.0 to 4.0 μm (P-P), which was a good value.
比較例1
実施例1における熱処理の工程を省略した以外は、実施
例1と同様の工程を経てセラミック配線板を得た。Comparative Example 1 A ceramic wiring board was obtained through the same steps as in Example 1 except that the heat treatment step in Example 1 was omitted.
得られたセラミック配線板20ケを使用し、密着強度を
測定した。その結果平均で1.5 kg/rrrm2と
低くlまた超音波洗浄を行ったところ10分で導体回路
が剥離した。外観を観察したところ基板にわずかに反り
が発生し、基板の表面粗さは6.0〜8.0μm(P−
P)と実施例1の2倍の粗さであった。Adhesion strength was measured using 20 of the obtained ceramic wiring boards. As a result, the average weight was as low as 1.5 kg/rrrm2.When ultrasonic cleaning was performed, the conductor circuit peeled off in 10 minutes. When we observed the appearance, we found that the substrate was slightly warped, and the surface roughness of the substrate was 6.0 to 8.0 μm (P-
P) and the roughness was twice that of Example 1.
比較例2
実施例1における表面研磨及び熱処理の工程を省略した
以外は、実施例1と同様の工程を経てセラミック配線板
を得た。Comparative Example 2 A ceramic wiring board was obtained through the same steps as in Example 1, except that the surface polishing and heat treatment steps in Example 1 were omitted.
得られたセラミック配線板20ケを使用し、密着強度を
測定した。その結果平均で2.5kg/wn2の密着強
度を示し、超音波洗浄を30分間行ってもパターンの剥
離は生ぜず、また外観を観察しても基板の表面粗さは3
.0〜4.0μm(P−P)と良好な値を示したが、基
板に大きな反りが発生していた。Adhesion strength was measured using 20 of the obtained ceramic wiring boards. The results showed an average adhesion strength of 2.5 kg/wn2, the pattern did not peel off even after 30 minutes of ultrasonic cleaning, and the surface roughness of the substrate was 3.
.. Although it showed a good value of 0 to 4.0 μm (P-P), large warpage occurred in the substrate.
(発明の効果) 本発明によればセラミック基板に反シは生ぜず。(Effect of the invention) According to the present invention, no warping occurs on the ceramic substrate.
めっき法で強固な金属被膜を形成することができ。A strong metal coating can be formed using the plating method.
金属被膜の酸化を防止したセラミック配線板を得ること
ができる。A ceramic wiring board whose metal coating is prevented from oxidation can be obtained.
代理人 弁理士 若 林 邦 彦Agent Patent Attorney Kunihiko Wakabayashi
Claims (1)
質成分をセラミック基板の表面に析出させた後,セラミ
ック基板の表面を粗化し,さらに粗化した面にめつきを
施して金属被膜を形成し,ついでエッチング法でパター
ンを形成し,パターンの上面にニッケル層さらにその上
面に貴金属層を形成することを特徴とするセラミック配
線板の製造法。1. After heat-treating the ceramic substrate with a polished surface to deposit a glassy component on the surface of the ceramic substrate, the surface of the ceramic substrate is roughened, and the roughened surface is further plated to form a metal coating. A method of manufacturing a ceramic wiring board characterized by forming a pattern using an etching method, forming a nickel layer on the top surface of the pattern, and then forming a noble metal layer on the top surface of the nickel layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33422488A JPH02174188A (en) | 1988-12-26 | 1988-12-26 | Manufacture of ceramic wiring board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33422488A JPH02174188A (en) | 1988-12-26 | 1988-12-26 | Manufacture of ceramic wiring board |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02174188A true JPH02174188A (en) | 1990-07-05 |
Family
ID=18274941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33422488A Pending JPH02174188A (en) | 1988-12-26 | 1988-12-26 | Manufacture of ceramic wiring board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02174188A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT500807A1 (en) * | 2004-01-23 | 2006-03-15 | Austria Tech & System Tech | METHOD FOR MANUFACTURING A PCB LAYER ELEMENT AND PCB LAYERING ELEMENT |
-
1988
- 1988-12-26 JP JP33422488A patent/JPH02174188A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT500807A1 (en) * | 2004-01-23 | 2006-03-15 | Austria Tech & System Tech | METHOD FOR MANUFACTURING A PCB LAYER ELEMENT AND PCB LAYERING ELEMENT |
AT500807B1 (en) * | 2004-01-23 | 2006-11-15 | Austria Tech & System Tech | METHOD FOR MANUFACTURING A PCB LAYER ELEMENT AND PCB LAYERING ELEMENT |
US7552525B2 (en) | 2004-01-23 | 2009-06-30 | AT & Saustria Technologie & Systemtechnik Aktiengesellschaft | Method for the production of a circuit board element |
US8039755B2 (en) | 2004-01-23 | 2011-10-18 | At & S Austria Technologie & Systemtechnik Aktiengesellschaft | Method for manufacturing a printed circuit board element as well as a printed circuit board element |
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