JPH0216758A - Semiconductor device cap - Google Patents

Semiconductor device cap

Info

Publication number
JPH0216758A
JPH0216758A JP63167053A JP16705388A JPH0216758A JP H0216758 A JPH0216758 A JP H0216758A JP 63167053 A JP63167053 A JP 63167053A JP 16705388 A JP16705388 A JP 16705388A JP H0216758 A JPH0216758 A JP H0216758A
Authority
JP
Japan
Prior art keywords
cap
casing
sealing
semiconductor device
case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63167053A
Other languages
Japanese (ja)
Inventor
Kunio Takatsuki
高月　邦男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63167053A priority Critical patent/JPH0216758A/en
Publication of JPH0216758A publication Critical patent/JPH0216758A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent a sealing material from flowing into a casing by slanting the cap sealing section to make an interval between the casing and a cap wider at the outside than at the inside of the cap. CONSTITUTION:A sealing section 4 located at the bottom surface of a cap 5 includes a tapered portion directed upward from an inner peripheral section to an outer peripheral section thereof and formed into a slanting surface. A pellet 1 is mounted on a casing 2 and connected to the same through a wire 3. Since the sealing section 4 is formed slantingly, the cap 5 is bonded to the casing 2 through a sealing material 6. Hereby, an interval between the casing 2 and the cap 5 is more extended at the outside than at the inside to prevent the sealing material 6 from flowing into the casing 2.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、樹脂あるいは金属合金の封止材を使用する半
導体装置用キャップに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a cap for a semiconductor device using a resin or metal alloy encapsulant.

従来の技術 従来、この種のキャップは、第３図に示すように封止部
１３が水平になっており、その封止部に封止材１４を接
着させケース１５とキャップ１６を封止し、半導体装置
の気密を保っていた。BACKGROUND ART Conventionally, this type of cap has a horizontal sealing part 13 as shown in FIG. 3, and a sealing material 14 is adhered to the sealing part to seal the case 15 and the cap 16. , which kept semiconductor devices airtight.

発明が解決しようとする課題 上述した従来のキャップは、封止時に封止部が水平にな
っているために、封止時の圧力で封止材がケース内部に
流れてしまう。Problems to be Solved by the Invention In the conventional cap described above, since the sealing portion is horizontal when the cap is sealed, the sealing material flows into the case due to the pressure during sealing.

封止材がケース内部に流れ込むと、半導体素子あるいは
ワイヤ部まで封止材が到達し、半導体素子の特性変動あ
るいはワイヤの切断等が発生し、歩留・信頼度の低下を
招わくという欠点がある。If the encapsulant flows into the case, it will reach the semiconductor element or wire, causing changes in the characteristics of the semiconductor element or cutting of the wire, resulting in a decrease in yield and reliability. be.

本発明は従来の上記実情に鑑みてなされたものであり、
従って本発明の目的は、従来の技術に内在する」二記課
題を解決することをｉＩ能とした新規な半導体装置用キ
ャップを提供することにある。The present invention has been made in view of the above-mentioned conventional situation,
Therefore, an object of the present invention is to provide a novel cap for a semiconductor device capable of solving the two problems inherent in the conventional technology.

発明の従来技術に対する相違点 上述した従来のキャップに対し、本発明は、キャップの
封止部が水平でないという相違点を有する。Differences of the Invention from the Prior Art Compared to the above-mentioned conventional caps, the present invention has a difference in that the sealing part of the cap is not horizontal.

問題点を解決するための手段 前記目的を達成する為に、本発明に係る半導体装置用キ
ャップは、封止部の内周部と外周部の高さが異なってい
ることを特徴とする。Means for Solving the Problems In order to achieve the above object, the cap for a semiconductor device according to the present invention is characterized in that the heights of the inner and outer peripheral portions of the sealing portion are different.

実施例 次に本発明をその好ましい各実施例について図面を参照
して具体的に説明する。EXAMPLES Next, preferred embodiments of the present invention will be specifically explained with reference to the drawings.

第１図は本発明による第１の実施例を示す概略縦断面図
である。FIG. 1 is a schematic longitudinal sectional view showing a first embodiment of the present invention.

第１図を参照するに、キャップ５の底面における封止部
４は、内周部から外周部へ向って上向きのテーパが切ら
れ、傾斜面に形成されている。Referring to FIG. 1, the sealing portion 4 on the bottom surface of the cap 5 is tapered upward from the inner circumference toward the outer circumference, and is formed into an inclined surface.

ペレッ１−１は、ケース２にマウントされ、ワイヤ３に
よりケース２に接続されている。封止部４が傾斜してい
るキャップ５が封止材６によりケース２に接着されてい
る。The pellet 1-1 is mounted on the case 2 and connected to the case 2 by a wire 3. A cap 5 having an inclined sealing portion 4 is bonded to the case 2 with a sealing material 6.

第２図は本発明による第２の実施例を示す概略縦断面図
である。FIG. 2 is a schematic vertical sectional view showing a second embodiment of the present invention.

第２図を参照するに、キャップ１１の底面における封止
部ｌＯは、外周部が欠所となった段部に形成されている
。Referring to FIG. 2, the sealing portion 10 on the bottom surface of the cap 11 is formed in a stepped portion with a defect at the outer periphery.

ペレット７はケース８にマウントされワイヤ９によりペ
レット７とケース８に接続されている。The pellet 7 is mounted on a case 8 and connected to the pellet 7 and the case 8 by a wire 9.

封止部ＩＯが階段状になっているキャップ１１が封止材
１２によりケース８に接着されている。A cap 11 having a stepped sealing portion IO is adhered to the case 8 with a sealing material 12.

発明の詳細 な説明したように１本発明によれば、キャップの封止部
を傾斜または階段状にすることにより、ケースとキャッ
プの間隔を、内側より外側を広くすることができ、封止
時に圧力が加わっても封止材が外側に押し出されてケー
ス内側に流れ込むことを防止できるので、半導体素子の
特性変動あるいはワイヤの切断が除去され、歩留・信頼
度の低下を防止することができる。DETAILED DESCRIPTION OF THE INVENTION According to the present invention, by making the sealing portion of the cap sloped or stepped, the distance between the case and the cap can be made wider on the outside than on the inside, and Even if pressure is applied, the encapsulant can be prevented from being pushed outward and flowing into the case, which eliminates variations in the characteristics of semiconductor elements or wire breaks, and prevents a drop in yield and reliability. .

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明による第１の実施例を使用した半導体装
置の概略縦断面図、第２図は本発明による第２の実施例
を使用した半導体装置の概略縦断面図、第３図は従来の
キャップを使用した半導体装置の縦断面図である。 １．７．１７．、、ペレット、２．８．１５．、、ケー
ス。 ３．９．１８．、、ワイヤ、４，１０．１３．、、キャ
ップ封止部、５．１１．１６．、、キャップ、６，１２
．１４．、、封止材FIG. 1 is a schematic vertical cross-sectional view of a semiconductor device using a first embodiment of the present invention, FIG. 2 is a schematic vertical cross-sectional view of a semiconductor device using a second embodiment of the present invention, and FIG. FIG. 2 is a longitudinal cross-sectional view of a semiconductor device using a conventional cap. 1.7.17. ,, pellets, 2.8.15. ,,Case. 3.9.18. ,,wire,4,10.13. ,, cap sealing part, 5.11.16. ,,cap,6,12
．． 14. ,, sealing material

Claims (1)

【特許請求の範囲】[Claims] 半導体装置を封止するためのキャップにおいて、キャッ
プの封止部の内周部と外周部の高さが異なっていること
を特徴とする半導体装置用キャップ。1. A cap for a semiconductor device, the cap for a semiconductor device being characterized in that the inner and outer circumferential portions of the sealing portion of the cap have different heights.
JP63167053A 1988-07-05 1988-07-05 Semiconductor device cap Pending JPH0216758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63167053A JPH0216758A (en) 1988-07-05 1988-07-05 Semiconductor device cap

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63167053A JPH0216758A (en) 1988-07-05 1988-07-05 Semiconductor device cap

Publications (1)

Publication Number Publication Date
JPH0216758A true JPH0216758A (en) 1990-01-19

Family

ID=15842525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63167053A Pending JPH0216758A (en) 1988-07-05 1988-07-05 Semiconductor device cap

Country Status (1)

Country Link
JP (1) JPH0216758A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02130120U (en) * 1989-03-31 1990-10-26
JPH059026U (en) * 1991-07-12 1993-02-05 テイーデイーケイ株式会社 Electronic parts
JP2007281233A (en) * 2006-04-07 2007-10-25 Denso Corp Semiconductor sensor device and its manfacturing method
JP2011114192A (en) * 2009-11-27 2011-06-09 Shinko Electric Ind Co Ltd Semiconductor device
JP2014072346A (en) * 2012-09-28 2014-04-21 Nec Corp Hollow sealing structure and manufacturing method of the same
JP2014150333A (en) * 2013-01-31 2014-08-21 Kyocera Corp Piezoelectric component
JP2014225837A (en) * 2013-05-17 2014-12-04 京セラクリスタルデバイス株式会社 Crystal device
JP6399272B1 (en) * 2017-09-05 2018-10-03 三菱電機株式会社 Power module, manufacturing method thereof, and power conversion device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02130120U (en) * 1989-03-31 1990-10-26
JPH059026U (en) * 1991-07-12 1993-02-05 テイーデイーケイ株式会社 Electronic parts
JP2007281233A (en) * 2006-04-07 2007-10-25 Denso Corp Semiconductor sensor device and its manfacturing method
JP2011114192A (en) * 2009-11-27 2011-06-09 Shinko Electric Ind Co Ltd Semiconductor device
US8592959B2 (en) 2009-11-27 2013-11-26 Shinko Electric Industries Co., Ltd. Semiconductor device mounted on a wiring board having a cap
JP2014072346A (en) * 2012-09-28 2014-04-21 Nec Corp Hollow sealing structure and manufacturing method of the same
JP2014150333A (en) * 2013-01-31 2014-08-21 Kyocera Corp Piezoelectric component
JP2014225837A (en) * 2013-05-17 2014-12-04 京セラクリスタルデバイス株式会社 Crystal device
JP6399272B1 (en) * 2017-09-05 2018-10-03 三菱電機株式会社 Power module, manufacturing method thereof, and power conversion device

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