JPH02166764A - Semiconductor device with capacitance element and manufacture thereof - Google Patents

Semiconductor device with capacitance element and manufacture thereof

Info

Publication number
JPH02166764A
JPH02166764A JP32252888A JP32252888A JPH02166764A JP H02166764 A JPH02166764 A JP H02166764A JP 32252888 A JP32252888 A JP 32252888A JP 32252888 A JP32252888 A JP 32252888A JP H02166764 A JPH02166764 A JP H02166764A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
capacitor
capacitors
capacitance element
diffusion region
insulating films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32252888A
Inventor
Kaoru Motonami
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • H01L27/10805Dynamic random access memory structures with one-transistor one-capacitor memory cells
    • H01L27/10808Dynamic random access memory structures with one-transistor one-capacitor memory cells the storage electrode stacked over transistor

Abstract

PURPOSE:To obtain a semiconductor device having a capacitance element having large electrostatic capacitance by forming a plurality of capacitors to the capacitance element and connecting these capacitors in parallel. CONSTITUTION:A capacitor 50 is composed of an impurity diffusion region 4a, capacitor insulating films 21a, 21b shaped onto the impurity diffusion region 4a, first capacitor electrodes 22a, 22b formed onto the capacitor insulating films 21a, 21b and insulated from the impurity diffusion region 4a, capacitor insulating films 23a, 23b coating the first capacitor electrodes 22a, 22b, and a second capacitor electrode 24 shaped onto the capacitor insulating films 23a, 23b and brought into contact with the impurity diffusion region 4a. Accordingly, a plurality of the capacitors are shaped, and these capacitors are connected in parallel, thus acquiring a semiconductor device having a capacitance element having large electrostatic capacitance.
JP32252888A 1988-12-20 1988-12-20 Semiconductor device with capacitance element and manufacture thereof Pending JPH02166764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32252888A JPH02166764A (en) 1988-12-20 1988-12-20 Semiconductor device with capacitance element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32252888A JPH02166764A (en) 1988-12-20 1988-12-20 Semiconductor device with capacitance element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH02166764A true true JPH02166764A (en) 1990-06-27

Family

ID=18144674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32252888A Pending JPH02166764A (en) 1988-12-20 1988-12-20 Semiconductor device with capacitance element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH02166764A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2285528A (en) * 1993-07-13 1995-07-12 Nippon Kokan Kk Memory element, monvolatile memory, nonvolatile storage device, and method for storing information by use of the storage device
US5602779A (en) * 1994-11-11 1997-02-11 Nkk Corporation Nonvolatile multivalue memory
US5615146A (en) * 1994-11-11 1997-03-25 Nkk Corporation Nonvolatile memory with write data latch
US5623444A (en) * 1994-08-25 1997-04-22 Nippon Kokan Kk Electrically-erasable ROM with pulse-driven memory cell transistors
US5661686A (en) * 1994-11-11 1997-08-26 Nkk Corporation Nonvolatile semiconductor memory
US5729494A (en) * 1993-05-11 1998-03-17 Nkk Corporation Non-volatile memory with floating gate type cell transistors and method for adjusting threshold valves of these transistors
US5808338A (en) * 1994-11-11 1998-09-15 Nkk Corporation Nonvolatile semiconductor memory
US5812458A (en) * 1995-07-31 1998-09-22 Nkk Corporation Electrically-erasable and programmable ROM with pulse-driven memory cells
US5818753A (en) * 1995-07-31 1998-10-06 Nkk Corporation Electrically-erasable and programmable ROM with pulse-driven memory cell
US6067253A (en) * 1995-05-30 2000-05-23 Nkk Corporation Nonvolatile semiconductor memory device capable of suppressing a variation of the bit line potential
JP2010109338A (en) * 2008-09-30 2010-05-13 Semiconductor Energy Lab Co Ltd Semiconductor memory device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748530A (en) * 1993-05-11 1998-05-05 Nkk Corporation Non-voltile memory device, non-volatile memory cell and method of adjusting the threshold value of the non-volatile memory cell and each of plural transistors
US5729494A (en) * 1993-05-11 1998-03-17 Nkk Corporation Non-volatile memory with floating gate type cell transistors and method for adjusting threshold valves of these transistors
GB2285528B (en) * 1993-07-13 1997-08-06 Nippon Kokan Kk A memory element and a method of storing information therein
US5623442A (en) * 1993-07-13 1997-04-22 Nkk Corporation Memory cells and memory devices with a storage capacitor of parasitic capacitance and information storing method using the same
GB2285528A (en) * 1993-07-13 1995-07-12 Nippon Kokan Kk Memory element, monvolatile memory, nonvolatile storage device, and method for storing information by use of the storage device
US5623444A (en) * 1994-08-25 1997-04-22 Nippon Kokan Kk Electrically-erasable ROM with pulse-driven memory cell transistors
US5661686A (en) * 1994-11-11 1997-08-26 Nkk Corporation Nonvolatile semiconductor memory
US5615146A (en) * 1994-11-11 1997-03-25 Nkk Corporation Nonvolatile memory with write data latch
US5602779A (en) * 1994-11-11 1997-02-11 Nkk Corporation Nonvolatile multivalue memory
US5808338A (en) * 1994-11-11 1998-09-15 Nkk Corporation Nonvolatile semiconductor memory
US6067253A (en) * 1995-05-30 2000-05-23 Nkk Corporation Nonvolatile semiconductor memory device capable of suppressing a variation of the bit line potential
US5812458A (en) * 1995-07-31 1998-09-22 Nkk Corporation Electrically-erasable and programmable ROM with pulse-driven memory cells
US5818753A (en) * 1995-07-31 1998-10-06 Nkk Corporation Electrically-erasable and programmable ROM with pulse-driven memory cell
JP2010109338A (en) * 2008-09-30 2010-05-13 Semiconductor Energy Lab Co Ltd Semiconductor memory device

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