JPH02162788A - Formation of optical semiconductor device protective film - Google Patents
Formation of optical semiconductor device protective filmInfo
- Publication number
- JPH02162788A JPH02162788A JP31882288A JP31882288A JPH02162788A JP H02162788 A JPH02162788 A JP H02162788A JP 31882288 A JP31882288 A JP 31882288A JP 31882288 A JP31882288 A JP 31882288A JP H02162788 A JPH02162788 A JP H02162788A
- Authority
- JP
- Japan
- Prior art keywords
- film
- protective film
- internal stress
- silicon nitride
- inner stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 71
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 230000003287 optical effect Effects 0.000 title claims description 11
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 26
- 230000003449 preventive effect Effects 0.000 abstract 7
- 102100037651 AP-2 complex subunit sigma Human genes 0.000 abstract 2
- 101000806914 Homo sapiens AP-2 complex subunit sigma Proteins 0.000 abstract 2
- 239000010408 film Substances 0.000 description 117
- 239000000758 substrate Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000005253 cladding Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910005091 Si3N Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 101100027969 Caenorhabditis elegans old-1 gene Proteins 0.000 description 1
- -1 Silicon oxy nitride Chemical class 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Semiconductor Lasers (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体レーザや受光素子等光半導体装置の光入出射面に
形成される保護膜に関し、
光半導体装置の信軽性向上を可能にする低内部応力保護
膜の形成方法の提供を目的とし、光入出射面に少なくと
も第１の保護膜と第２の保護膜とを重ねて形成し、第１
の保護膜の圧縮内部応力と第２の保護膜の引張内部応力
とを均衡せ〔産業上の利用分野〕
本発明は半導体レーザや受光素子等光半導体装置の光入
出射面に形成される保護膜、特に内部応力の低減を可能
にする保護膜の形成方法に関する。[Detailed Description of the Invention] [Summary] A low internal stress protective film that makes it possible to improve the reliability of an optical semiconductor device, regarding a protective film formed on the light input/output surface of an optical semiconductor device such as a semiconductor laser or a light receiving element. The purpose of the present invention is to provide a method for forming a first protective film, in which at least a first protective film and a second protective film are overlapped and formed on a light input/output surface;
Balancing the compressive internal stress of the first protective film and the tensile internal stress of the second protective film [Industrial Application Field] The present invention relates to a method for forming a film, particularly a protective film that enables reduction of internal stress.
光半導体装置は反射防止膜や酸化防止膜等の保護膜が活
性面、即ち光入出射面に形成されるが、この保護膜が引
張内部応力や圧縮内部応力を有すると、光半導体装置の
活性層に影響を及ぼして界面単位や点欠陥を形成し信転
性の低下を招く。そこで内部応力の低減を可能にする保
護膜の形成方法の実現が望まれている。In optical semiconductor devices, a protective film such as an anti-reflection film or an anti-oxidation film is formed on the active surface, that is, the light input/output surface.If this protective film has tensile internal stress or compressive internal stress, the activation of the optical semiconductor device will be reduced. This affects the layer, forming interface units and point defects, leading to a decrease in reliability. Therefore, it is desired to realize a method for forming a protective film that makes it possible to reduce internal stress.
第６図は半導体レーザにおける従来の保護膜を示す斜視
図、第７図は受光素子における従来の保護膜を示す側断
面図である。FIG. 6 is a perspective view showing a conventional protective film in a semiconductor laser, and FIG. 7 is a side sectional view showing a conventional protective film in a light receiving element.
第６図において半導体レーザ、例えばプレーナーストラ
イプ・レーザは、ＧａＡｓ基板ｌｌ上にｎクララド７１
１２、活性層１３、ｐクラッド層１４、ｎ型ＧａＡｓ！
１５が積層されており、Ｐクラッド層１４とｎ型ＧａＡ
ｓ層１５の中央部にｐ″Ｚｎ拡散領域１６が形成されて
いる。ＧａＡｓ基板１１の外側にｎ電極１７が、ｎ型Ｇ
ａＡｓ層１５の外側にｐ電極１８が形成され、側面に設
けられた光出射面は活性領域の酸化物形成を防止し、発
振利得を上昇させるため保護膜２によって覆われている
。In FIG. 6, a semiconductor laser, for example a planar stripe laser, is mounted on a GaAs substrate 11 with an n Clarad 71
12, active layer 13, p cladding layer 14, n-type GaAs!
15 are stacked, P cladding layer 14 and n-type GaA
A p″Zn diffusion region 16 is formed in the center of the s-layer 15. An n-electrode 17 is formed on the outside of the GaAs substrate 11.
A p-electrode 18 is formed on the outside of the aAs layer 15, and a light emitting surface provided on the side surface is covered with a protective film 2 to prevent oxide formation in the active region and increase oscillation gain.
従来の半導体レーザでは窒化シリコン膜、シリコン酸化
膜、シリコン膜、アルミナ膜等の単独膜或いは複合膜が
保護膜２として用いられ、発振波長をλ、活性層の屈折
率をｎｓとすると膜厚がλ／４ｎｓまたはλ／２ｎｓに
なるように形成される。In conventional semiconductor lasers, a single film or a composite film such as a silicon nitride film, a silicon oxide film, a silicon film, or an alumina film is used as the protective film 2. If the oscillation wavelength is λ and the refractive index of the active layer is ns, the film thickness is It is formed to be λ/4ns or λ/2ns.
また第７図において受光素子、例えばＩｎＧａＡｓ−ｐ
ｉｎホトダイオードはｎ−１ｎＰ基板３１上に、バッフ
ァ層（ｎ−ＩｎＰ）３２、光電変換Ｎ（ｎ−−１ｎｏ、
ｓ：＋Ｇａｏ、ｎＪｓ）３３、ウィンド層（ｎ−Ｉｎ、
ｇＧａ、 Ａｓｙ ） ３４などが積層され、ウィンド
層３４を貫通し光電変換層３３の内部に達するＰ゛拡散
領域３５が形成されている。In addition, in FIG. 7, a light receiving element, for example, an InGaAs-p
The in photodiode has a buffer layer (n-InP) 32, a photoelectric conversion N (n--1no,
s: +Gao, nJs) 33, wind layer (n-In,
gGa, Asy) 34, etc. are laminated to form a P diffusion region 35 that penetrates the window layer 34 and reaches the inside of the photoelectric conversion layer 33.
ウィンド層３４のｐ゛拡散領域３５が光の入射面で表面
が反射防止膜４で覆われ、ウィンド層３４のその他の領
域はＳｉ３Ｎ、膜３６で覆われている。図中ｎ−ＩｎＰ
基板３１の外側に設けられた電極３７はｎ電極であり、
反射防止膜４とＳｉ３Ｎ、膜３６とを貫通する電極３８
はｐ電極である。The p-diffusion region 35 of the window layer 34 is a light incident surface and its surface is covered with an anti-reflection film 4, and the other regions of the window layer 34 are covered with a Si3N film 36. In the figure, n-InP
The electrode 37 provided on the outside of the substrate 31 is an n-electrode,
An electrode 38 that penetrates the antireflection film 4 and the Si3N film 36
is the p-electrode.
従来のホトダイオードでは反射防止膜４として酸化シリ
コン膜、窒化シリコン膜、アルミナ膜等の単独膜が用い
られ、入射光の波長をλ、反射防止膜の屈折率をｎｒと
すると、膜厚がλ／４ｎｒになるよう反射防止膜４が形
成される。In conventional photodiodes, a single film such as a silicon oxide film, a silicon nitride film, or an alumina film is used as the anti-reflection film 4. If the wavelength of the incident light is λ and the refractive index of the anti-reflection film is nr, then the film thickness is λ/ The anti-reflection film 4 is formed to have a resistance of 4nr.
しかし従来の半導体レーザにおける保護膜や受光素子に
おける反射防止膜は、いずれも特をの内部応力、即ち圧
縮内部応力若しくは引張内部応力を有し、半導体レーザ
にあっては保護膜の内部応力が活性層に悪影響を及ぼし
、界面準位や点欠陥を形成し信頼性の劣化を招く要因に
なる。また受光素子にあっては光電変換層に悪影響を及
ぼし、界面単位や点欠陥を形成し信頼性の劣化を招くと
同時に暗電流を増大させるという問題があった。However, the protective film in conventional semiconductor lasers and the antireflection film in light receiving elements both have special internal stress, that is, compressive internal stress or tensile internal stress, and in semiconductor lasers, the internal stress of the protective film is activated. This has an adverse effect on the layer, forming interface states and point defects, which leads to deterioration of reliability. Further, in the light receiving element, there is a problem in that it adversely affects the photoelectric conversion layer, forming interface units and point defects, leading to deterioration of reliability and increasing dark current.
本発明の目的は光半導体装置の信頼性向上を可能にする
低内部応力の保護膜形成方法を提供することにある。An object of the present invention is to provide a method for forming a protective film with low internal stress, which makes it possible to improve the reliability of an optical semiconductor device.
第１図は本発明になる保護膜形成方法の原理を示す側断
面図である。なお企図を通し同じ対象物は同一記号で表
している。FIG. 1 is a side sectional view showing the principle of the protective film forming method according to the present invention. The same objects are represented by the same symbols throughout the plan.
上記課題は光入出射面５に少なくとも第１の保護膜６と
第２の保１１ＰＪ７とを重ねて形成し、第１の保護膜６
の圧縮内部応力と第２の保護膜７の引張内部応力とを均
衡せしめる、本発明になる光半導体装置の保護膜形成方
法によって達成される。The above problem is solved by forming at least the first protective film 6 and the second protective film 11PJ7 on the light input/output surface 5 so that the first protective film 6
This is achieved by the method of forming a protective film for an optical semiconductor device according to the present invention, which balances the compressive internal stress of the second protective film 7 with the tensile internal stress of the second protective film 7.
第１図において光入出射面に少な（とも第１の保護膜と
第２の保護膜とを重ねて形成し、第１の保護膜の圧縮内
部応力と第２の保護膜の引張内部応力とを均衡せしめる
ことで、光入出射面に悪影響を及ぼす保護膜の内部応力
が低減される。即ち、光半導体装置の信頼性向上を可能
にする低内部応力の保護膜形成方法を実現することがで
きる。In FIG. 1, a first protective film and a second protective film are formed on the light input/output surface, and the compressive internal stress of the first protective film and the tensile internal stress of the second protective film are By balancing these, the internal stress of the protective film that adversely affects the light input/output surface can be reduced.In other words, it is possible to realize a method of forming a protective film with low internal stress that makes it possible to improve the reliability of optical semiconductor devices. can.
以下添付図により本発明の実施例について説明する。第
２−図は窒化シリコン膜の内部応力を示す図、第３図は
本発明の一実施例を示す側断面図、第４図は本発明の他
の実施例を示す側断面図、第５図は受光素子の暗電流変
化を示す図である。Embodiments of the present invention will be described below with reference to the accompanying drawings. Figure 2 is a diagram showing the internal stress of a silicon nitride film, Figure 3 is a side sectional view showing one embodiment of the present invention, Figure 4 is a side sectional view showing another embodiment of the present invention, and Figure 5 is a diagram showing the internal stress of the silicon nitride film. The figure is a diagram showing changes in dark current of a light-receiving element.
第２図において縦軸はプラズマ気相成長法により形成さ
れた窒化シリコン膜の内部応力、横軸は窒化シリコン膜
形成時のプラズマ周波数である。In FIG. 2, the vertical axis represents the internal stress of the silicon nitride film formed by plasma vapor phase epitaxy, and the horizontal axis represents the plasma frequency at the time of forming the silicon nitride film.
図示の如く窒化シリコン膜の内部応力は膜形成時のプラ
ズマ周波数に依存し、シランを含む混合ガスとアンモニ
アを用いＮｕｓ／５ｉＨａ＝ ４、基板温度２００〜２
５０°Ｃ１反応圧力Ｑ、２Ｔｏｒｒの条件のもとに、プ
ラズマ周波数２００ｋＨｚ、パワー密度０．１Ｗ／ｃｄ
で形成された窒化シリコン膜は、屈折率が２．０で２×
１０”ｄｙｎ／ｃ（の内部応力（圧縮）を有する。As shown in the figure, the internal stress of the silicon nitride film depends on the plasma frequency during film formation, and using a mixed gas containing silane and ammonia, Nus/5iHa = 4, and substrate temperature 200 to 2.
Under the conditions of 50°C1 reaction pressure Q, 2 Torr, plasma frequency 200kHz, power density 0.1W/cd
The silicon nitride film formed with a refractive index of 2.0 and 2×
It has an internal stress (compression) of 10"dyn/c.
同様にシランを含む混合ガスとアンモニアを用いＮＨｓ
／ＳｉＨ４＝８０ＳＣＣＭ／４０ＳＣＣＭ 、基板温度
２００〜２５０℃、反応圧力Ｑ、２Ｔｏｒｒの条件のも
とに、プラズマ周波数１３．５６ＭＨハバワー密度０．
１Ｗ／ｃｄで形成された窒化シリコン膜は、屈折率が２
．０で−ｏ、ｓｘｉ。Similarly, using a mixed gas containing silane and ammonia, NHs
/SiH4=80SCCM/40SCCM, substrate temperature 200-250°C, reaction pressure Q, 2 Torr, plasma frequency 13.56MH, Habower density 0.
A silicon nitride film formed at 1 W/cd has a refractive index of 2.
．． 0 - o, sxi.
” ｄｙｎ／ａａの内部応力（引張）を有する。” It has an internal stress (tensile) of dyn/aa.
したがって周波数可変のプラズマ気相成長装置を用いて
第１図に示す如く、第１の保護膜６として圧縮内部応力
を有する窒化シリコン膜を形成し、第２の保護膜７とし
て引張内部応力を有する窒化シリコン膜を形成すること
によって、第１の保護膜６と第２の保護膜７が均衡して
保護膜の内部応力を小さくすることができる。Therefore, as shown in FIG. 1, a silicon nitride film having compressive internal stress is formed as the first protective film 6 and a silicon nitride film having tensile internal stress is formed as the second protective film 7 using a frequency variable plasma vapor phase growth apparatus. By forming the silicon nitride film, the first protective film 6 and the second protective film 7 are balanced, and the internal stress of the protective film can be reduced.
第３図において本発明になる保護膜形成方法の一実施例
では、半導体レーザの側面に設けられた光出射面５が二
層の保護膜で覆われている。第１の保護膜６として圧縮
内部応力を有する窒化シリコン膜が用いられ、第２の保
護膜７として引張内部応力を有する窒化シリコン膜が用
いられている。In FIG. 3, in one embodiment of the protective film forming method according to the present invention, a light emitting surface 5 provided on the side surface of a semiconductor laser is covered with a two-layer protective film. A silicon nitride film having compressive internal stress is used as the first protective film 6, and a silicon nitride film having tensile internal stress is used as the second protective film 7.
なお図中、１１はＧａＡｓ基板、１２はｎクラッド層、
１３は活性層、１４はｐクラッド層、１５はｎ型ＧａＡ
ｓＮ、１６はｐ”ｚ口拡散領域、１７はｎ電極、１８は
ｐ電極である。In the figure, 11 is a GaAs substrate, 12 is an n-cladding layer,
13 is an active layer, 14 is a p cladding layer, 15 is an n-type GaA
sN, 16 is a p''z diffusion region, 17 is an n electrode, and 18 is a p electrode.
一般に基板の反りをδとすると薄膜の内部応力σは次式
により与えられる。Generally, if the warpage of the substrate is δ, the internal stress σ of the thin film is given by the following equation.
ここでＥは基板のヤング率、νは基板のポアソン比、ｌ
は基板の厚さ、ｄは薄膜の厚さである。上式から基板の
反りδは薄膜の厚さｄに比例し次式により与えられる。Here, E is Young's modulus of the substrate, ν is Poisson's ratio of the substrate, l
is the thickness of the substrate and d is the thickness of the thin film. From the above equation, the warp δ of the substrate is proportional to the thickness d of the thin film and is given by the following equation.
σ・ｄｉ δ
したがって保護膜の内部応力を低減するには活性層にお
ける反りδを小さくすればよい、第１の保護膜６の内部
応力をσ１、膜厚をｄｉ とし、第２の保護膜７の内部
応力をσ２、膜厚をｄ２とすると多層保護膜の内部応力
Σは次式で表される。σ・di δ Therefore, in order to reduce the internal stress of the protective film, it is sufficient to reduce the warp δ in the active layer. Let the internal stress of the first protective film 6 be σ1, the film thickness be di, and the second protective film 7 The internal stress Σ of the multilayer protective film is expressed by the following equation, where the internal stress is σ2 and the film thickness is d2.
学的位相条件から決まる０例えばＤ＝λ／２ｎｓとし発
振光の波長λ−０，８μｌ、活性層の屈折率ｎ５＝３．
５とするとＤ−１１００人となる。For example, D=λ/2ns, the wavelength of the oscillation light is λ−0.8 μl, and the refractive index of the active layer n5=3.
If it is 5, it will be D-1100 people.
ば二層の保護膜において、内部応力をＯにするにはσ１
・ｄ、十σ２ ・ｄ２＝０にしなければならない。窒
化シリコン膜からなる第１の保護膜の内部応力σ、を２
ＸＩＯ”ｄｙｎ／ｃｄ、窒化シリコン膜からなる第２
の保護膜の内部応力σ２を一〇、８Ｘ１０１０ｄｙｎ／
ｃＩｉｌとすると、
２ ＸＩＯ■０Ｘ ｄ ｌ −０，８Ｘｌ０１６Ｘ ｄ
！ ＝ Ｏｄ、 ＋ａｔ ＝１１００人でありｄｉ−
３１０人、ｄ２−７９０人にすればよい。In order to reduce the internal stress to O in a two-layer protective film, σ1
・d, 1σ2 ・Must set d2=0. The internal stress σ of the first protective film made of silicon nitride film is 2
XIO”dyn/cd, a second layer made of silicon nitride film
The internal stress σ2 of the protective film is 10,8X1010dyn/
If cIil, 2 XIO■0X d l -0,8Xl016X d
! = Od, +at = 1100 people and di-
310 people, d2-790 people.
なお実施例は０．８μ−の半導体レーザであるが１μ−
の半導体レーザにも適用可能である。また保護膜として
窒化シリコン膜を用いているがその他に、シリコン膜、
シリコン・オキシ・ナイトライド膜も使用できる。Note that the example is a 0.8μ- semiconductor laser, but the 1μ-
It is also applicable to other semiconductor lasers. In addition, a silicon nitride film is used as a protective film, but there are also silicon films,
Silicon oxy nitride membranes can also be used.
また第４図において本発明になる保護膜形成方法の他の
実施例では、ＩｎＧａＡｓ−ｐｉｎホトダイオードの光
の入射面５が二層の反射防止膜で覆われ、第１の反射防
止膜６として圧縮内部応力を有する窒化シリコン膜が用
いられ、第２の反射防止膜７として引張内部応力を有す
る窒化シリコン膜が用いられている。なお図中、３１は
ｎ−１ｎＰ基板、３２はバッファ層、３３は光電変換層
、３４はウィンド層、３５はｐ＋拡散領域、３６は５ｉ
Ｊ４膜、３７はｎ電極、３８はｐ電極である。Further, in another embodiment of the protective film forming method according to the present invention shown in FIG. A silicon nitride film having internal stress is used, and a silicon nitride film having tensile internal stress is used as the second antireflection film 7. In the figure, 31 is an n-1nP substrate, 32 is a buffer layer, 33 is a photoelectric conversion layer, 34 is a window layer, 35 is a p+ diffusion region, and 36 is a 5i
In the J4 film, 37 is an n-electrode and 38 is a p-electrode.
前記実施例と同様に多層反射防止膜の内部応力Σは次式
で表される。As in the above embodiment, the internal stress Σ of the multilayer antireflection film is expressed by the following equation.
学的位相条件から決まる０例えばＤ＝λ／４ｎｒとし発
振光の波長λ−１，３μ醜、反射防止膜の屈折率ｎｒ＝
２とするとＤ＝１６００人となる。For example, D = λ/4nr, the wavelength of the oscillation light is λ-1, 3μ, and the refractive index of the antireflection film is nr =
2, D=1600 people.
一方、二層の反射防止膜において内部応力を０にするに
は、前記実施例と同様にσ１ ・ｄ、＋σ２ ・ｄ２＝
０にしなければならない、窒化シリコン膜からなる第１
の反射防止膜の内部応力σ１を２ ＸＩＯ”ｄｙｎ／ｃ
ｄｌ、窒化シリコン膜からなる第２の反射防止膜の内部
応力σ２を一〇、 ８ ＸＩＯ”ｄｙｎ／ｄとすると、
２ ｘｌＯＩＯｘ ｄ ｔ −０，８ｘｌＯＩＯｘ ａ
ｚ ＝ Ｏｄ ＋ ＋ ｄ ｚ−１６００人であり
ａ＋＝４６０人、ｄｔ−１１４０人にすればよい。On the other hand, in order to make the internal stress zero in a two-layer antireflection film, σ1 ・d, +σ2 ・d2=
The first layer made of silicon nitride film must be set to zero.
The internal stress σ1 of the anti-reflection film is 2XIO”dyn/c
dl, and the internal stress σ2 of the second antireflection film made of silicon nitride film is 10.8XIO"dyn/d, then 2xlOIOx d t -0,8xlOIOx a
z = Od + + d z - 1600 people, a + = 460 people, dt - 1140 people.
かかるＩｎＧａＡｓ−ｐｉｎホトダイオードにおいて従
来の方法で反射防止膜を形成した場合、暗電流は第５図
に一点鎖線で示す如くほぼ１０−’Ａ台であったが、本
発明になる方法で多層反射防止膜を形成した場合は、同
図に実線で示す如＜１０−” Ａ台まで低下して特性が
大幅に改善される。なお実施例は１μ噴帯のＩｎＧａＡ
ｓホトダイオードについて述べているが、０．８μ−帯
のＳｉおよびＧａＡｓ系受光素子、１μ鋼帯のＧｅ受光
素子にも適用可能である。When an antireflection film was formed using the conventional method in such an InGaAs-pin photodiode, the dark current was approximately 10-'A as shown by the dashed line in FIG. When a film is formed, the characteristics are significantly improved, dropping to <10-”A level as shown by the solid line in the same figure.
Although the description has been made regarding an s photodiode, it is also applicable to a 0.8μ-band Si and GaAs light receiving element, and a 1μ steel band Ge light receiving element.
このように光入出射面に少な（とも第１の保護膜と第２
の保護膜とを重ねて形成し、第１の保護膜の圧縮内部応
力と第２の保護膜の引張内部応力とを均衡せしめること
で、光入出射面に悪影響を及ぼす保護膜の内部応力が低
減される。即ち、光半導体装置の信転性向上を可能にす
る低内部応力の保護膜形成方法を実現することができる
。In this way, there is a small amount of light on the light input/output surface (both the first protective film and the second protective film).
By overlapping the protective film and balancing the compressive internal stress of the first protective film and the tensile internal stress of the second protective film, the internal stress of the protective film that adversely affects the light input/output surface can be reduced. reduced. That is, it is possible to realize a method for forming a protective film with low internal stress, which makes it possible to improve the reliability of an optical semiconductor device.
上述の如く本発明によれば光半導体装置の信頼性向上を
可能にする低内部応力の保護膜形成方法を提供すること
ができる。As described above, according to the present invention, it is possible to provide a method for forming a protective film with low internal stress, which makes it possible to improve the reliability of an optical semiconductor device.
第１図は本発明になる保護膜形成方法の原理を示す側断
面図、
第２図は窒化シリコン膜の内部応力を示す図、第３図は
本発明の一実施例を示す側断面図、第４図は本発明の他
の実施例を示す側断面図、第５図は受光素子の暗電流変
化を示す図、第６図は半導体レーザにおける従来の保護
膜を示す斜視図、
第７図は受光素子における従来の保護膜を示す側断面図
、
である０図において
５は光入出射面、 ６は第１の保護膜、７は第２の
保護膜、 １１はＧａＡｓ基板、工２はｎクラッド層
、 １３は活性層、１４はｐクラッド層、
１６はｐ”Ｚｎｔ敗領域、
１８はｐ電極、
３２はバッファ層、
３４はウィンド層、
３６はＳｉ３Ｎ、膜、
３８はｐ電極、
をそれぞれ表す。
１５はｎ型ＧａＡｓ層、
１７はｎ電極、
３１はｎ４ｎＰ基板、
３３は光電変換層、
３５はｐ゛拡散領域、
３７はｎ電極、
ｉ ｌ 口
１０ＤＫ １Ｍ４閃 １０閂
プラス゛マ周又数（Ｈｚ）
γイ乙シリコン周ｔｔｎｔ勾邦ｌたりε示１１０第
２ 口
第
記
十亭多日月Ｏ槍二の実施・９１８示ブ刊算１１浦テ面瓜
］第 ４− ロ
電 圧（ｖ）
費兜（手／）絹電流虞化Ｚ示ず旧
１ ５ ロFIG. 1 is a side sectional view showing the principle of the protective film forming method according to the present invention, FIG. 2 is a diagram showing internal stress of a silicon nitride film, and FIG. 3 is a side sectional view showing an embodiment of the present invention. FIG. 4 is a side sectional view showing another embodiment of the present invention, FIG. 5 is a diagram showing changes in dark current of a light receiving element, FIG. 6 is a perspective view showing a conventional protective film in a semiconductor laser, and FIG. is a side cross-sectional view showing a conventional protective film in a light-receiving element. N cladding layer, 13 active layer, 14 p cladding layer, 16 p''Znt failure region, 18 p electrode, 32 buffer layer, 34 window layer, 36 Si3N film, 38 p electrode, 15 is an n-type GaAs layer, 17 is an n-electrode, 31 is an n4nP substrate, 33 is a photoelectric conversion layer, 35 is a p-diffusion region, 37 is an n-electrode, il port 10DK 1M4 flash 10 bar plus diagonal number （Hz）
2 Implementation of the 10th record of the tenth day Takazuki Oyari 2 / 918 book publication number 11 Ura Te Menguri ] No. 4 - Voltage (v) Fee helmet (hand /) Silk current 虞虞 Z Showless Old 1 5 b
Claims (1)
２の保護膜（７）とを重ねて形成し、第１の保護膜（６
）の圧縮内部応力と第２の保護膜（７）の引張内部応力
とを、均衡せしめることを特徴とする光半導体装置の保
護膜形成方法。At least a first protective film (6) and a second protective film (7) are formed overlappingly on the light input/output surface (5), and the first protective film (6)
1. A method for forming a protective film for an optical semiconductor device, comprising balancing the compressive internal stress of the second protective film (7) with the tensile internal stress of the second protective film (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31882288A JPH02162788A (en) | 1988-12-15 | 1988-12-15 | Formation of optical semiconductor device protective film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31882288A JPH02162788A (en) | 1988-12-15 | 1988-12-15 | Formation of optical semiconductor device protective film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02162788A true JPH02162788A (en) | 1990-06-22 |
Family
ID=18103340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31882288A Pending JPH02162788A (en) | 1988-12-15 | 1988-12-15 | Formation of optical semiconductor device protective film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02162788A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06132554A (en) * | 1991-01-29 | 1994-05-13 | Optical Coating Lab Inc | Thin-film coating and its formation method |
| JPH09283843A (en) * | 1996-04-17 | 1997-10-31 | Hitachi Ltd | Semiconductor laser |
| US5943356A (en) * | 1996-06-06 | 1999-08-24 | Nec Corporation | Semiconductor laser with front face covered with laminated dielectric layers which produce oppositely acting stresses |
| JP2002270879A (en) * | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Corp | Semiconductor device |
| EP1347548A3 (en) * | 2002-03-20 | 2006-02-01 | Hitachi, Ltd. | Semiconductor laser device |
| WO2013021705A1 (en) * | 2011-08-11 | 2013-02-14 | Ｓｐｐテクノロジーズ株式会社 | Apparatus, method and program for manufacturing nitride film |
-
1988
- 1988-12-15 JP JP31882288A patent/JPH02162788A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06132554A (en) * | 1991-01-29 | 1994-05-13 | Optical Coating Lab Inc | Thin-film coating and its formation method |
| JPH09283843A (en) * | 1996-04-17 | 1997-10-31 | Hitachi Ltd | Semiconductor laser |
| US5943356A (en) * | 1996-06-06 | 1999-08-24 | Nec Corporation | Semiconductor laser with front face covered with laminated dielectric layers which produce oppositely acting stresses |
| JP2002270879A (en) * | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Corp | Semiconductor device |
| EP1347548A3 (en) * | 2002-03-20 | 2006-02-01 | Hitachi, Ltd. | Semiconductor laser device |
| WO2013021705A1 (en) * | 2011-08-11 | 2013-02-14 | Ｓｐｐテクノロジーズ株式会社 | Apparatus, method and program for manufacturing nitride film |
| JP2013038354A (en) * | 2011-08-11 | 2013-02-21 | Spp Technologies Co Ltd | Nitride film manufacturing device, nitride film manufacturing method, and nitride film manufacturing program |
| US9117660B2 (en) | 2011-08-11 | 2015-08-25 | Spp Technologies Co., Ltd. | Apparatus, method and program for manufacturing nitride film |
| EP2743970A4 (en) * | 2011-08-11 | 2015-10-21 | Spp Technologies Co Ltd | Apparatus, method and program for manufacturing nitride film |
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