JP2000332302A - Semiconductor light emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor light emitting element which can increase an external quantization efficiency indicative of a rate of light externally extracted while maintaining an internal quantum efficiency high as a light emission efficiency of a luminous layer, by increasing the purity of wavelength of light emitted from the layer and by enhancing its crystallization. SOLUTION: The element is formed by joining a substrate 1 of transparent material to wavelengths of emitted light and a luminous layer formation part 9 of, e.g. InGaAlP compound semiconductor by a filter layer part 12, the substrate 1 being provided with a filter layer 12 having a luminous layer, e.g. on its surface for transmission of wavelengths of light emitted from the luminous layer, the luminous layer formation part 9 having laminated (n) and (p) type layers 2 and 4 and forming the luminous layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device using an InGaAlP-based compound semiconductor material and used for a display panel, an LED panel, and the like. More specifically, the present invention relates to a semiconductor light emitting device having improved light emission wavelength purity and improved light extraction efficiency to the outside.

[0002]

2. Description of the Related Art As shown in FIG. 8, a conventional semiconductor light-emitting device using an InGaAlP-based compound semiconductor is formed on a semiconductor substrate 21 made of, for example, n-type GaAs.
N-type cladding layer 2 made of GaAlP-based semiconductor material
2. An active layer 23 made of a non-doped InGaAlP-based semiconductor material and a p-type clad layer 24 made of a p-type InGaAlP-based semiconductor material having a band gap energy smaller than that of the clad layer are epitaxially grown to form a double hetero junction structure. Light emitting layer forming part 2
9 are formed. Then, a p-side electrode 2 is formed on a part of the surface side through a contact layer 26 made of p-type GaAs.
7. An n-side electrode 28 is provided on the back surface side of the semiconductor substrate 21 with an Au-Ge-Ni alloy or the like, and is formed into a chip from a wafer. In some cases, a current diffusion layer made of a p-type AlGaAs-based compound semiconductor (not shown) may be provided on the surface of the light emitting layer forming portion 29.

The light emitted from the active layer is determined by the band gap energy of the material of the active layer to be the light emitting layer. However, actually, not only light of a certain wavelength based on the band gap energy but also light of a wavelength near the light and light of a wavelength shifted by a certain wavelength due to excitation light is emitted with little light. Therefore, light is emitted as light of a mixed color of light of these wavelengths. On the other hand, for applications such as display panels and displays,
There is a desire for light of a pure wavelength that is not a color mixture.

Further, as shown in FIG. 8, the light emitted from the light emitting layer is not only light traveling to the upper surface but also travels in four directions to the substrate side. However, since the GaAs substrate absorbs light emitted in the visible light or infrared light, the light reflected on the substrate side is very small (the light indicated by the dashed line in FIG. 8), and the light directed toward the substrate side is It hardly goes to the light emitting surface side and cannot be used effectively. In addition, the semiconductor layer has a significantly higher refractive index than ambient air, and it is difficult to extract light. In addition, the efficiency of light extracted from the front side is not improved because the semiconductor layer stacked above the light emitting layer is thin.

On the other hand, in order to solve such a problem, a reflective layer (not shown) is formed on the substrate 21, and a light emitting layer forming portion 29 is grown on the reflective layer. An LED chip having a structure in which light of a desired wavelength is reflected by the light traveling toward the substrate 21 toward the upper surface before entering the substrate 21 so as to extract much light of the desired wavelength is considered.

[0006]

In a conventional semiconductor light-emitting device in which a reflective layer is formed on a conventional substrate and a light-emitting layer forming portion is grown thereon, the reflective layer is formed by a laminated structure of semiconductor layers. However, the lattice matching with the substrate cannot be completely achieved, and the crystallinity of the semiconductor layer of the light emitting layer forming portion grown on the reflective layer deteriorates. As a result, there is a problem that the luminous efficiency itself in the luminous layer decreases, and the luminous efficiency as a whole does not increase even if the light that has proceeded to the substrate side is reflected to the front side.

Further, even if a substrate transparent to the emission wavelength is used, a filter layer is provided on the surface thereof, and a light emitting layer forming portion is grown, and light emitted from the substrate side through the filter layer is used, A substrate that is transparent to light has a lattice constant and the like that do not match the semiconductor layer forming the light-emitting layer, and cannot form a light-emitting layer-forming portion having excellent crystallinity. There's a problem.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem. In addition to improving the purity of the wavelength of light emitted from the light emitting layer and improving the crystallinity, the internal efficiency of emitting light from the light emitting layer is improved. It is an object of the present invention to provide a semiconductor light emitting device capable of increasing external quantum efficiency, which is a ratio of light having a desired wavelength to be extracted outside while maintaining high quantum efficiency.

[0009]

A semiconductor light emitting device according to the present invention has a structure in which a substrate made of a material transparent to light of a desired wavelength emitted from a light emitting layer, and an n-type layer and a p-type layer are laminated. A light-emitting layer forming part for forming a layer, and a filter layer that transmits light of the desired wavelength laminated on one of the substrate and the light-emitting layer forming part, and the substrate is provided on an exposed surface of the filter layer. Alternatively, the other of the light emitting layer forming portions is bonded.

Here, the filter layer has a function of transmitting only light of a desired wavelength by laminating layers having different refractive indexes with a thickness corresponding to the wavelength thereof. The transparent substrate may be bonded by growing on the transparent substrate side, or the light emitting layer forming unit may be bonded by growing on the transparent substrate side. However, in the case where the material of the filter layer can be formed in lattice matching with the light emitting layer forming portion, it is preferable that the transparent substrate be grown as it is on the light emitting layer forming portion and bonded to the light emitting layer forming portion. In the case of a material that cannot be lattice-matched with the light-emitting layer, it is preferable that the material is laminated on a transparent substrate before the light-emitting layer forming portion is joined.

Here, the InGaAlP-based material refers to In
_0.49 (Ga _1−x Al _x ) _{0.51 Represents} a material when the value of x varies between 0 and 1 in the form of P. Note that the mixed crystal ratios of In and (Al _x Ga _1-x ) of 0.49 and 0.51 are determined by Ga on which the InGaAlP-based material is laminated.
It means that the ratio is lattice matched with a semiconductor substrate such as As.

With this structure, each semiconductor layer in the light emitting layer forming portion can be grown on a semiconductor substrate lattice-matched with the semiconductor layer, and therefore, has good crystallinity. The light-emitting layer forming portion having good crystallinity and the substrate transparent to light emitted from the light-emitting layer are bonded to each other through a filter layer provided on one of the light-emitting layer forming portions. Is a semiconductor light-emitting element having a structure capable of emitting light from the transparent substrate side through a filter that transmits only light of the emission wavelength. Therefore, it is possible to efficiently emit light and to obtain light of high purity color from the transparent substrate side.

On an adhesion surface between the exposed surface of the filter layer and the other surface of the substrate or the light emitting layer forming portion, a triangular diagram of InP, GaP, and AlP made of InGaAlP-based compound semiconductor, In _0.045 Ga _0.955 P and In _0.305 Al _A compound having an In mixed crystal ratio smaller than the line connecting _0.695 P, Al _y Ga
_1-y As (0.6 ≦ y ≦ 1), GaAs _1-z P _z (0.9
88 ≦ z ≦ 1) With the interposition of a bonding layer composed of at least one of a layer and ITO, even when a material that does not easily adhere to the semiconductor layer is used for the filter layer or the like, bonding can be performed by thermocompression bonding or the like. . In addition, it is preferable that these materials are used, because they transmit visible light having a wavelength of 660 to 550 nm (from red to green), which does not attenuate. In addition, a filter layer can also be comprised with these materials.

A second filter layer for transmitting light of a desired wavelength emitted by the light emitting layer is further provided on a side of the light emitting layer forming portion opposite to a side adhered to the substrate. The light emitted from the side opposite to the transparent substrate can emit light of a high purity with only light having a desired wavelength. In this case, the substrate on which the light emitting layer forming portion has been grown is removed after the light emitting layer forming portion is bonded, and a filter layer is grown again on the removed surface. Since the light emitting layer forming portion has already grown with good crystallinity, light is emitted with high efficiency, and the filter function of the filter layer is hardly affected.

[0015] A light of the desired wavelength provided with a second filter layer for transmitting light of a desired wavelength emitted from the light emitting layer is provided on a side of the light emitting layer forming portion opposite to a side adhered to the substrate. A second substrate made of a transparent material is bonded to the second filter layer side so as to take out light from the front side, so that the second substrate has a thick window layer. Therefore, the light extraction efficiency is greatly improved.

[0016]

Next, a semiconductor light emitting device of the present invention will be described with reference to the drawings.

The semiconductor light emitting device of the present invention has a structure as shown in FIG.
For example, a bonding layer 13 for transmitting light of a desired wavelength is provided on the surface of a substrate 1 made of a material transparent to light of a desired wavelength emitted from the light emitting layer, for example, an n-type layer 2 made of an InGaAlP-based compound semiconductor. And a filter layer 1 in a light emitting layer forming portion 9 in which a light emitting layer is formed by laminating a p-type layer 4.
2 is provided by adhering at the filter layer 12 part.

As the substrate 1, GaP, SiC, Ga
A substrate made of a material transparent to light having a wavelength emitted by a light emitting layer such as an N, AlGaAs-based compound semiconductor is used. Sapphire (Al ₂ O ₃ ), quartz, or the like can be used, but in consideration of a heat cycle during operation after attaching the light emitting layer forming section 9 described later, the lattice constant and the coefficient of thermal expansion are reduced. A semiconductor substrate close to the formation section 9 is preferable. By using a conductive (semiconductor) filter layer 12 to be described later, the conductivity type of the semiconductor substrate 1 is made to match the conductivity type of the semiconductor layer adhered thereon, so that one electrode is connected to the semiconductor substrate 1. It is more preferable to use a semiconductor because it can be provided on the surface of the substrate. The thickness of the substrate 1 is set to a thickness of about 2 to 200 μm,
The thicker the light is, the more light can be extracted from the side, so that the external differential quantum efficiency can be improved.

In this example, the filter layer 12 is grown on the light emitting layer forming portion 9 and the surface thereof is bonded to the bonding layer 13 provided on the substrate 1. The filter layer 12 is provided on the surface of the substrate 1. The surface can be bonded to the light emitting layer forming portion 9 via the bonding layer 13 or directly. As in the example shown in FIG. 1, when a semiconductor material of the same system as that of the light emitting layer forming unit 9 is used as the filter layer 12, there is no problem of lattice matching, so that a film is formed directly on the light emitting layer forming unit 9. However, there is no problem of lowering the crystallinity. For example, as shown in FIG. 1B, the filter layer 12 includes a first layer 1 of a semiconductor layer or a dielectric layer having a different refractive index.
2a and the second layer 12b each have a thickness of λ / (2n) (n is a refractive index of a semiconductor layer or a dielectric layer, λ is an emission wavelength), and a layer having a small refractive index and a layer having a large refractive index; Alternatively, it is formed by alternately stacking two layers having a large difference in refractive index. As the first layer 12a, for example, In
_0.49 (Ga _1-x Al _x ) _0.51 P semiconductor layer (for example, x
In = 0, the refractive index n = 3.6), as the second layer 12b, for example, _{In 0.49 (Ga 1-y Al} y) 0.51 P (x <
y, for example, y = 0.7 and a refractive index of n = 3.3), as described above, respectively, with respect to the emission wavelength λ, λ /
(2n), and a filter layer for the emission wavelength is formed.

The transmission characteristics of the filter layer 12 are shown in FIG.
As shown in FIG. 2, by forming the thickness so as to transmit light at a desired wavelength to be emitted, for example, 620 nm, light of a desired wavelength can be extracted more and light of a color with good purity can be obtained. An element is obtained.

The laminated film forming the filter layer 12 is
As described above, a semiconductor layer of the same system as the light emitting layer forming section 9 is used.
The lattice distortion is also caused by the operation after bonding
It is preferable because there is no problem due to differences in thermal expansion coefficient.
New However, it is not limited to this example.
For example, GaP and InGaAlP-based compound semiconductor, GaAs
And other semiconductor layers such as AlGaAs compound semiconductors
Combine, SiO_Two/ Al _TwoO_ThreeCombination of dielectric films such as
It can be configured by any method.

The light emitting layer forming portion 9 is made of an InGaAlP-based compound semiconductor and has a carrier concentration of 1 × 10 ¹⁷ to 1 × 1.
0 at about ¹⁹ cm ^-3, thickness of the n-type cladding layer 2 of about 0.1-2 .mu.m, made of InGaAlP-based compound semiconductor having a composition band gap energy than that of the cladding layer without doping is reduced, 0.1-2 .mu.m An active layer 3 having a thickness of about 10 nm and a carrier concentration of 1 × 10 ¹⁶ doped with Zn.
Approximately 1 × 10 ¹⁹ cm ⁻³ , a thickness of approximately 0.1 to 2 μm, and a stacked structure of an n-type cladding layer 2 and a p-type cladding layer 4 of the same composition as an InGaAlP-based compound semiconductor.

The bonding layer 13 is made of, for example, Al_yGa_1-yA
s (0.6 ≦ y ≦ 1), GaAs_1-z P_z(0.988 ≦
z ≦ 1), an InGaAlP-based compound semiconductor as shown in FIG.
As shown, triangular diagrams of InP, GaP, and AlP
In the quaternary mixed crystal represented by_uGa_1-uP (0 ≦ u
≦ 0.045) and In_vAl_1-vP (0 ≦ v ≦ 0.30
5), the portion indicated by the oblique lines surrounded by
_0.045Ga_0.955P and In _0.305Al_0.695Line connecting P
Compound with a smaller In crystal ratio than In, or an ITO film
Which one or more is used, especially 660 nm
Does not absorb light of wavelengths (red) to 550 nm (green)
Therefore, it is preferable. This bonding layer 13 is not particularly provided.
However, by being provided, the light emitting layer forming portion 9 and the
It is preferable because distortion etc. are hardly generated in the filter layer 12.
No. In the above-described example, the filter layer 12 has a light emitting layer type.
Provided on the component 9 and between the filter layer 12 and the substrate 1
Has a structure in which a bonding layer is interposed,
Is provided with a filter layer 12, on which a bonding layer 13 is provided.
Provided between the filter layer 12 and the light emitting layer forming portion 9.
May be interposed with a bonding layer.

Further, in the example shown in FIG. 1A, the bonding is performed while leaving the n-type GaAs substrate 11 on which the light emitting layer forming portion 9 is grown, but the GaAs substrate 11 may be removed, As will be described later, the GaAs substrate 11 may be removed and a second filter layer may be provided on its surface, or a second transparent substrate provided with the second filter layer may be attached. Then, a part of the substrate 1 made of GaP is Au-T
A p-side electrode 8 made of an i-alloy, Au-Zn-Ni alloy, Au-Be-Ni alloy or the like is provided, and an n-side electrode 7 made of an Au-Ge-Ni alloy or the like is provided on the back surface of the semiconductor substrate 1 made of GaAs. Have been.

To manufacture such an LED chip,
For example, as shown in FIG.
The substrate 11 is placed in an MOCVD (metal organic chemical vapor deposition) apparatus, and triethylgallium (hereinafter referred to as TEG) as a reaction gas is used.
), Trimethyl aluminum (hereinafter referred to, TMA hereinafter), trimethyl indium (hereinafter referred to as TMIn), phosphine (hereinafter, introduction of H ₂ Se together with hydrogen carrier gas (H ₂₎ as a) and n-type dopant gas of PH ₃ And epitaxially grown at a temperature of about 500 to 700 ° C. and a carrier concentration of 1 × 10 ¹⁶ to 1 × 10
¹⁹ cm ^-3 approximately _{In 0. 49 (Ga 0.3 Al 0.7} ) the n-type cladding layer 2 is grown 0.5μm about epitaxial consisting _0.51 P. Next, the TMA of the reaction gas was reduced and TE
G is increased to, for example, undoped In _0.49 (Ga _0.75
Al _0.25 ) The active layer 3 made of _0.51 P is about 0.5 μm thick,
Further, the reaction gas is the same as that of the n-type cladding layer 2, the dopant gas is dimethyl zinc (DMZn), and the carrier concentration is about 1 × 10 ¹⁷ to 1 × 10 ¹⁹ cm ⁻³ , for example, In _0.49 (Ga _A p-type cladding layer 4 of _0.3 Al _0.7 ) _0.51 P is grown to a thickness of about 1 μm to form a light emitting layer forming portion 9. Then, for example, n-type In _0.49 Ga
The first layer 12a made of _0.51 P is formed to about 86 nm, and the second layer 12b made of, for example, n-type In _0.49 (Ga _0.3 Al _0.7 ) _0.51 P is formed to have a thickness of about 94 nm each of about 5 layers to form the filter layer 12. I do. The number of layers is individually set to an optimum value in consideration of electric characteristics.

On the other hand, as shown in FIG. 4B, the MOCVD method is applied to the surface of the semiconductor substrate 1 made of, for example, p-type GaP, which is a transparent substrate with respect to the emission wavelength, in the same manner as the growth of each semiconductor layer described above. As a result, Al _y Ga _1-y As (0.6
≦ y ≦ 1) is laminated.

Then, on the bonding layer 13 shown in FIG.
The surface of the filter layer 12 of the grown semiconductor layer in FIG. 4A is superposed, and heated to about 700 ° C. while being pressed at a pressure of about 0.1 to 10 kg / cm ² and pressed. Then, on the transparent substrate 1, metal Au—Ti alloy for the electrode, Au—
A Zn-Ni alloy or an Au-Be-Ni alloy is formed, a metal film for an electrode is patterned as shown in FIG. 1A to form a p-side electrode 8, and a p-side electrode 8 is formed on the back surface of the GaAs substrate 1. An n-side electrode 7 is formed by depositing an Au-Ge-Ni alloy or the like on the entire surface, and is diced into chips. Note that Ga
N is removed by polishing the As substrate 11 and exposed.
The n-side electrode 7 can be formed on the semiconductor layer. By removing the layer, there is no layer that absorbs emitted light, so that the efficiency of extracted light is further improved.

According to the present invention, while the filter layer is provided near the light emitting layer forming portion and the light emitting layer forming portion is grown and adhered with good crystallinity, the crystallinity of the light emitting layer forming portion is good. And emits light with high luminous efficiency. On the other hand, the filter layer transmits only light of a desired wavelength emitted by the light emitting layer, so that light of a desired wavelength with high purity can be obtained from the transparent substrate side. In addition, since light can be extracted from the side of the substrate by using a filter layer as an adhesive layer or bonding a thick transparent substrate via a bonding layer, the external differential quantum efficiency, which is the proportion of light extracted outside, is extremely high. To improve. That is, when light is taken out from the surface of the semiconductor laminated portion, it is difficult to take out light by total reflection due to the difference in the refractive index between the semiconductor layer and air. Returning, the light extraction efficiency is greatly reduced, but if the transparent substrate is thick, light can be extracted from the side, so even if there is a substrate that absorbs light below, the light extraction efficiency Was greatly improved, and it was improved by 2 to 3 times compared with the conventional case.

In the above-described example, the structure is such that the GaAs substrate 11 is left or the GaAs substrate 11 is simply removed. However, as shown in FIG. 5, the n-type semiconductor layer (n A second filter layer 15 is formed by further laminating two types of semiconductor layers having different refractive indexes as described above on the surface of the shaped cladding layer 2, and an n-side electrode 7 is formed on the surface thereof.
Is formed, and the p-side electrode 8 is formed on the back surface of the p-type GaP substrate 1, whereby an LED chip having a filter layer provided on both sides of the light emitting layer forming section 9 can be formed.
As a result, for example, by arranging a reflective layer on the back side of the n-side electrode 7, it is possible to obtain a light emitting element of a pure color whose emission wavelength is completely limited by a filter, and to utilize light on the back side. Therefore, the external differential quantum efficiency can be further improved. The same parts as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 6 shows an example in which a second filter layer 16 is formed in addition to the substrate 1 on which the above-described filter layer 12 is formed.
Is formed, the GaAs substrate on which the light emitting layer forming portion 9 is formed is removed, and a transparent substrate on which filter layers 12 and 16 are provided on both surfaces of the light emitting layer forming portion 9 is formed. 1 and 17 are adhered. Although not shown in FIG. 6, the above-mentioned bonding layer can be interposed also at these bonding portions. As a result, light can be easily extracted from the side surfaces of both the substrates 1 and 17, and for example, when an LED chip is mounted in a bowl-shaped recess to form a lamp-type light-emitting element, light can be easily extracted from the side. The light extraction efficiency can be greatly improved, and the external differential quantum efficiency can be further improved.

In each of the above-described examples, the semiconductor layer was used as the filter layer. However, even when a dielectric film or the like was used, since the light emitting layer forming portion was bonded, the crystal during the growth of the light emitting layer forming portion was used. This can prevent a decrease in crystallinity and suppress the occurrence of crystal distortion. However, when a reflective layer is provided by an insulator such as a dielectric layer, as shown in FIG. 7, a part of the laminated semiconductor layer is removed by etching, and an n-type layer (cladding layer or another The n-side electrode can be formed by exposing the provided contact layer).
In the case of such a material that is difficult to lattice-match with the semiconductor layer, it is provided on the substrate 1 side and adheres to the light-emitting layer formation portion which is separately grown on the lattice-matched substrate. Is preferable for maintaining good crystallinity. FIG.
The same parts as those in FIG. 1A are denoted by the same reference numerals, and description thereof will be omitted.

In each of the above-described examples, the active layer 3 is sandwiched between the cladding layers 2 and 4, and the materials of the active layer 3 and the cladding layers 2 and 4, for example, the mixed crystal ratios of Al are made different. Although the active layer 4 has a double heterojunction structure in which an active layer 4 is a light emitting layer by easily confining carriers and light, a pn junction is formed without the active layer 2 interposed therebetween, and a structure in which a light emitting layer is formed in a pn junction portion is also available. May be.

In each of the above-described examples, specific examples are shown in which specific semiconductor materials are used as the respective semiconductor layers constituting the semiconductor light emitting element and the thickness and the carrier concentration are specific. Is not limited.

[0034]

According to the present invention, the filter layer is provided between the light emitting layer forming portion and the substrate without deteriorating the crystallinity of the semiconductor layer in the light emitting layer forming portion. The light emitted efficiently can be extracted to the transparent substrate side efficiently with only light having a specific wavelength. Moreover, since light can be extracted from the side of the thick transparent substrate that has been bonded,
A semiconductor light-emitting device of pure color light having high external differential quantum efficiency and a limited emission wavelength can be obtained.

[Brief description of the drawings]

FIG. 1 is a diagram showing a cross-sectional structure of one embodiment of a semiconductor light emitting device of the present invention.

FIG. 2 is a diagram showing an example of transmittance with respect to wavelength of the filter layer of FIG. 1;

FIG. 3 is a view showing a preferable range of a mixed crystal ratio when an InGaAlP-based compound semiconductor is used.

FIG. 4 is an explanatory diagram of a method for manufacturing the semiconductor light emitting device of FIG.

FIG. 5 is an explanatory sectional view of another embodiment of the semiconductor light emitting device of the present invention.

FIG. 6 is an explanatory cross-sectional view of still another embodiment of the semiconductor light emitting device of the present invention.

FIG. 7 is an explanatory sectional view of still another embodiment of the semiconductor light emitting device of the present invention.

FIG. 8 is a diagram illustrating light extraction by a conventional LED chip cross-sectional structure.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 p-type substrate 2 n-type cladding layer 3 active layer 4 p-type cladding layer 9 light emitting layer forming part 12 filter layer 13 bonding layer 15 second filter layer 16 second filter layer 17 second substrate

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shunji Nakata 21-floor, Mizonzaki-cho, Ukyo-ku, Kyoto F-term within ROHM Co., Ltd. (reference) 5F041 AA03 AA11 AA40 CA05 CA34 CA35 CA36 CA37 CA38 CA65 CA77

Claims (4)

[Claims] 1. A substrate made of a material transparent to light of a desired wavelength emitted by a light-emitting layer, a light-emitting layer forming section in which an n-type layer and a p-type layer are stacked to form a light-emitting layer, and the substrate Or a filter layer that transmits the light of the desired wavelength that is laminated on one of the light emitting layer forming portions,
A semiconductor light emitting device in which the other of the substrate and the light emitting layer forming portion is bonded to an exposed surface of the filter layer. 2. An InGaAlP bonding surface between the exposed surface of the filter layer and the other surface of the substrate or the light emitting layer forming portion.
Triangular diagram of InP, GaP, and AlP, which is composed of a compound semiconductor and has In _0.045 Ga _0.955 P and In _0.305 Al _0.695 P
Small compound with In mixed crystal ratio than the line connecting the bets, Al _y G
a _1-y As (0.6 ≦ y ≦ 1), GaAs _1-z P _z (0.
2. The semiconductor light emitting device according to claim 1, wherein a bonding layer comprising at least one of 988 ≦ z ≦ 1) layer and ITO is interposed. 3. A second filter layer for transmitting light of a desired wavelength emitted by the light emitting layer is provided on a side of the light emitting layer forming portion opposite to a side adhered to the substrate. 3. The semiconductor light emitting device according to 1 or 2. 4. The desired wavelength, wherein a second filter layer that transmits light of a desired wavelength emitted by the light emitting layer is provided on a side of the light emitting layer forming portion opposite to a side adhered to the substrate. A second substrate made of a material transparent to light of
The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is bonded with the second filter layer side opposed to the second filter layer.