JP2010258230A - Semiconductor light-emitting device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of improving the efficiency of light extraction and facilitating the production of a thin package, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor light-emitting device 1 includes a substrate 10, an epitaxial growth layer 8 arranged on the substrate, a surface electrode layer 20 arranged on the epitaxial growth layer 8, a back electrode layer 22 arranged on the backside of the substrate 10, a first insulating layer 24a formed along the side 42a of the substrate 10 and arranged so as to extend on a first sidewall surface composed of the substrate 10 and the epitaxial growth layer 8, and surfaces of the surface electrode 20 and the back electrode 22, and a first electrode layer 26a arranged on the first insulating layer 24a and part of the surface electrode layer 20. The method of manufacturing the device is also covered. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device and a manufacturing method thereof, and more particularly to a semiconductor light emitting device with improved light extraction efficiency and a manufacturing method thereof.

  A conventional light emitting diode (LED) has a structure in which epitaxial growth is performed on a substrate and electrodes are formed on the epitaxial growth layer. For this reason, the light extraction efficiency from the LED element upper part is bad.

  Moreover, when assembling the LED element, it is necessary to perform wire bonding on the electrode disposed on the epitaxial growth layer, which is an obstacle to realizing a thin package (for example, Patent Document 1 and (See Patent Document 2).

Japanese Utility Model Publication No. 5-4529 JP 2000-77726 A

  An object of the present invention is to provide a semiconductor light-emitting device with improved light extraction efficiency and easy thin packaging and a method for manufacturing the same.

  According to one aspect of the present invention, a substrate, an epitaxial growth layer disposed on the substrate, a surface electrode layer disposed on the epitaxial growth layer, a back electrode layer disposed on a back surface of the substrate, A first insulating layer formed along a side surface of the substrate and extending on the surface of the substrate, the first sidewall surface comprising the epitaxially grown layer, the surface electrode layer, and the surface of the back electrode layer; There is provided a semiconductor light emitting device comprising a first electrode layer disposed on a part of the first insulating layer and on the surface electrode layer.

  According to another aspect of the present invention, a substrate, an epitaxial growth layer disposed on the substrate, a surface electrode layer disposed on the epitaxial growth layer, a back electrode layer disposed on the back surface of the substrate, A first insulating layer formed along the side surface of the substrate and extending on the surface of the substrate, the first sidewall surface comprising the epitaxially grown layer, the surface electrode layer, and the surface of the back electrode layer And the substrate, the second side wall surface comprising the epitaxially grown layer, the surface of the surface electrode layer, and the surface of the back electrode layer, formed along the side surface formed in parallel to the side surface of the substrate Provided is a semiconductor light emitting device comprising: a second insulating layer disposed on the first insulating layer; and a first electrode layer disposed on the first insulating layer, the second insulating layer, and the surface electrode layer. It is.

  According to another aspect of the present invention, a step of forming an epitaxial growth layer on a substrate, a step of forming a surface electrode layer on the epitaxial growth layer, a step of forming a back electrode layer on the back surface of the substrate, Forming a first insulating layer formed along a side surface of the substrate and extending on the surface of the substrate, the first sidewall surface made of the epitaxially grown layer, the surface electrode layer, and the surface of the back electrode layer; And the substrate, the second side wall surface comprising the epitaxially grown layer, the surface of the surface electrode layer, and the surface of the back electrode layer, formed along the side surface formed in parallel to the side surface of the substrate Forming a second insulating layer extending above, forming a first electrode layer on the first insulating layer and part of the surface electrode layer, on the second insulating layer, and surface The method of manufacturing a semiconductor light emitting device and a step of forming a second electrode layer is provided on a part of the electrode layer.

  According to another aspect of the present invention, a step of forming an epitaxial growth layer on a substrate, a step of forming a surface electrode layer on the epitaxial growth layer, a step of forming a back electrode layer on the back surface of the substrate, Forming a first insulating layer formed along a side surface of the substrate and extending on the surface of the substrate, the first sidewall surface made of the epitaxially grown layer, the surface electrode layer, and the surface of the back electrode layer; And the substrate, the second side wall surface comprising the epitaxially grown layer, the surface of the surface electrode layer, and the surface of the back electrode layer, formed along the side surface formed in parallel to the side surface of the substrate Forming a second insulating layer extending thereon, and forming a first electrode layer on the first insulating layer, the second insulating layer, and the surface electrode layer. Method for manufacturing a device is provided.

  According to the present invention, it is possible to provide a semiconductor light emitting device with improved light extraction efficiency and easy thin packaging and a method for manufacturing the same.

1 is a schematic bird's-eye view of a semiconductor light-emitting element according to a first embodiment of the present invention. The typical bird's-eye view which shows a mode that the semiconductor light-emitting device which concerns on the 1st Embodiment of this invention is mounted on a mounting substrate. 1 is a schematic cross-sectional structure diagram in which a semiconductor light emitting element according to a first embodiment of the present invention is mounted on a mounting substrate. In the method for manufacturing a semiconductor light emitting device according to the first embodiment of the present invention, (a) a schematic cross-sectional structure diagram showing one step of a wafer process (part 1), (b) a schematic showing one step of a wafer process. Sectional Structural Diagram (Part 2), (c) Schematic Sectional Structure Diagram Showing One Step of Wafer Process (Part 3), (d) Schematic Sectional Structure Diagram Showing One Step Of Wafer Process (Part 4). In the method for manufacturing a semiconductor light emitting device according to the first embodiment of the present invention, (a) a schematic bird's-eye view showing a state of dividing an LED wafer, and (b) a plurality of LED bars formed by dividing the LED wafer. Schematic bird's-eye view. In the manufacturing method of the semiconductor light-emitting device concerning the 1st Embodiment of this invention, a typical bird's-eye view which shows one process of laminating | stacking an LED bar and a silicon bar, and inserting in an LED bar fixing device. FIG. 3 is a schematic cross-sectional structure diagram showing one step of stacking LED bars and silicon bars in the method for manufacturing a semiconductor light emitting element according to the first embodiment of the present invention. The typical bird's-eye view of the silicon bar used for the manufacturing method of the semiconductor light-emitting device concerning the 1st embodiment of the present invention. The manufacturing method of the semiconductor light-emitting device concerning the 1st Embodiment of this invention WHEREIN: The process of forming an insulating layer in the side wall of laminated | stacked LED bar, a part of surface electrode layer, and a part of back electrode layer is shown. FIG. FIG. 10 is a schematic cross-sectional structure diagram showing a step of stacking an LED bar and an inverted silicon bar after the step of FIG. 9 in the method for manufacturing a semiconductor light emitting device according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional structure diagram showing a process of forming an electrode layer on an insulating layer of a stacked LED bar and a part of a surface electrode layer in the method for manufacturing a semiconductor light emitting device according to the first embodiment of the present invention. . (A) Schematic cross-sectional structure diagram in which a semiconductor light emitting element according to Modification 1 of the first embodiment of the present invention is mounted on a mounting substrate, (b) Modification 2 of the first embodiment of the present invention. The typical cross-section figure which mounted the semiconductor light emitting element which concerns on on a mounting board | substrate. The typical bird's-eye view of the semiconductor light-emitting device which concerns on the 2nd Embodiment of this invention. The typical bird's-eye view which shows a mode that the semiconductor light-emitting device which concerns on the 2nd Embodiment of this invention is mounted on a mounting substrate. The typical cross-section figure which mounted the semiconductor light-emitting device concerning the 2nd Embodiment of this invention on the mounting board | substrate.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  The first to second embodiments described below exemplify apparatuses and methods for embodying the technical idea of the present invention, and the embodiments of the present invention include components. The material, shape, structure, arrangement, etc. are not specified below. Various modifications can be made to the embodiment of the present invention within the scope of the claims.

In the following description, the (Al _x Ga _1-x ) _y In _1-y P (0 <= x <1, 0 <y <= 1) layer is simplified and expressed as an AlInGaP layer, and x = A Ga _y In _1-y P (0 <y <= 1) layer corresponding to 0 is simplified and displayed as an InGaP layer.

(First embodiment)
A schematic bird's-eye view structure of the semiconductor light emitting device 1 according to the first embodiment of the present invention is expressed as shown in FIG. Also, a schematic bird's-eye view showing a state in which the semiconductor light emitting device 1 according to the first embodiment is mounted on the mounting substrate 32 is expressed as shown in FIG. Further, a schematic cross-sectional structure in which the semiconductor light emitting device 1 according to the first embodiment is mounted on the mounting substrate 32 is expressed as shown in FIG.

  As shown in FIG. 1, the semiconductor light emitting device 1 according to the first embodiment includes a substrate 10, an epitaxial growth layer 8 disposed on the substrate 10, and a surface electrode layer 20 disposed on the epitaxial growth layer 8. The back electrode layer 22 disposed on the back surface of the substrate 10, the first side wall surface formed of the substrate 10 and the epitaxial growth layer 8, and the surface of the surface electrode layer 20 and the back electrode layer 22 formed along the side surface 42 a of the substrate 10. A first insulating layer 24a disposed on the surface of the first insulating layer 24a, and a first electrode layer 26a disposed on the first insulating layer 24a and part of the surface electrode layer 20;

  Further, as shown in FIG. 1, the substrate 10 is formed along the side surface 42 b formed in parallel to the side surface 42 a of the substrate 10. And a second insulating layer 24b disposed on the surface of the back electrode layer 22 and a second electrode layer 26b disposed on the second insulating layer 24b and a part of the surface electrode layer 20. .

  In FIG. 1, light emitted from the semiconductor light emitting device 1 according to the first embodiment is emitted isotropically as indicated by hv in the figure.

  As shown in FIGS. 2 and 3, the first electrode layer 26a and the second electrode layer 26b are connected to the anode electrode 30a and the anode electrode 30b, respectively, and the back electrode layer 22 is connected to the cathode electrode 28. .

  As shown in FIGS. 2 and 3, the anode electrode 30 a, the anode electrode 30 b, and the cathode electrode 28 are disposed on the mounting substrate 32. The anode electrode 30a and the anode electrode 30b are electrically connected in common.

  The first electrode layer 26a and the second electrode layer 26b are respectively connected to the anode electrode 30a and the anode electrode 30b by die bonding, and the back electrode layer 22 is connected to the cathode electrode 28 by die bonding.

  One or both of the first electrode layer 26a and the second electrode layer 26b may include a thin film metal layer such as Au or a transparent electrode layer, for example. As the transparent electrode layer, for example, ITO, ITZO, ZnO or the like can be applied.

  The epitaxial growth layer 8 is disposed on the first cladding layer 12 disposed on the substrate 10, the multi-quantum well (MQW) layer 14 disposed on the first cladding layer 12, and the MQW layer 14. The second cladding layer 16 is provided. Further, a window layer 18 may be provided on the second cladding layer 16. Further, a frost treatment may be performed on the surface of the window layer 18 in order to increase the light extraction efficiency.

  Here, for example, the substrate 10 is formed of GaAs, the first cladding layer 12 and the second cladding layer 16 are formed of an AlInGaP layer, and the MQW layer 14 is formed of an InGaP / AlInGaP pair.

  The surface electrode layer 20 is a transparent electrode and is made of, for example, ITO, IZTO, or ZnO. The back electrode layer 22 is formed of, for example, an Au layer.

  One or both of the first insulating layer 24a and the second insulating layer 24b are formed of a silicon insulating film, a silicon nitride film, or the like.

One or both of the first insulating layer 24a and the second insulating layer 24b may include a distributed black reflection (DBR) layer. The DBR layer includes any one of ZrO ₂ , Al ₂ O ₃ , SiO ₂ , TiO ₂ , Ta ₂ O ₅ , Nb ₂ O ₅ , AlN, SiN, AlON, SiON, and AlN _x (0 <x <1). It may be formed of a multilayer film. Here, AlN _x (0 <x <1) indicates a case where the composition ratio deviates from the stoichiometry control of AlN.

Further, the DBR layer has a high light reflection characteristic, and may have a laminated structure including, for example, a ZrO ₂ film and a SiO ₂ film. The thickness d1 of the ZrO ₂ film and the thickness d2 of the SiO ₂ film are formed such that d1 = λ / 4n ₁ and d2 = λ / 4n ₂ . Here, n ₁ is the refractive index 2.18 of the ZrO ₂ film, and n ₂ is the refractive index 1.46 of the SiO ₂ film.

One or both of the first insulating layer 24a and the second insulating layer 24b may include an oxygen absorption layer. As the oxygen absorbing _{layer, ZrO 2, Al 2 O 3} , SiO 2, TiO 2, Ta 2 O 5, Nb 2 O 5, AlN, SiN, AlON, SiON, AlN x (0 <x <1) either A containing layer is applicable.

(Production method)
The method for manufacturing a semiconductor light emitting device according to the first embodiment includes a step of forming an epitaxial growth layer 8 on the substrate 10, a step of forming a surface electrode layer 20 on the epitaxial growth layer 8, and a back surface on the back surface of the substrate 10. The step of forming the electrode layer 22, and the substrate 10 is formed along the side surface 42a of the substrate 10 and extends on the surface of the substrate 10, the first sidewall surface of the epitaxial growth layer 8, the surface electrode layer 20, and the surface of the back electrode layer 22. A second side wall surface and a surface formed of the substrate 10 and the epitaxially grown layer 8, formed along the side surface 42 b formed in parallel to the side surface 42 a of the substrate 10. A step of forming a second insulating layer 24b extending on the surface of the electrode layer 20 and the surface of the back electrode layer 22, and a part on the first insulating layer 24a and the surface electrode layer 20; And a step of forming one electrode layer 26a, and forming a second electrode layer 26b on a part of the second insulating layer 24b and on the surface electrode layer 20.

  Further, the step of forming the anode electrode 30 and the cathode electrode 28 on the mounting substrate 32, and one or both of the first electrode layer 26a and the second electrode layer 26b are connected to the anode electrodes 30a and 30b, respectively, and the back electrode layer 22 Connecting to the cathode electrode 28.

  In the method for manufacturing a semiconductor light emitting device according to the first embodiment, a schematic cross-sectional structure showing one step of the wafer process is expressed as shown in FIGS. 4 (a) to 4 (d). In addition, a schematic bird's-eye view structure showing how the LED wafer 34 is cleaved along the cleavage plane, and a schematic bird's-eye view structure of the plurality of LED bars 36 formed by cleaving the LED wafer 34 along the cleavage plane, respectively, It is expressed as shown in FIGS. 5 (a) and 5 (b).

  Further, a schematic bird's-eye view structure showing one step of inserting the laminated structure 50 in which a plurality of LED bars 36 and silicon bars 40 are laminated into the LED bar fixing device 38 is expressed as shown in FIG.

  Further, a schematic cross-sectional structure showing one step of forming a laminated structure 50 in which a plurality of LED bars 36 and silicon bars 40 are laminated is expressed as shown in FIG.

  A schematic bird's-eye view structure of the silicon bar 40 used in the method for manufacturing the semiconductor light emitting device according to the first embodiment is expressed as shown in FIG.

  The schematic cross-sectional structure showing the process of forming the first insulating layer 24a and the second insulating layer 24b on the side wall of the laminated LED bar 36, a part of the front electrode layer 20 and a part of the back electrode layer 22 is shown in FIG. As shown in FIG.

  A schematic cross-sectional structure showing one step of laminating the LED bar 36 and the inverted silicon bar 40 after the step of FIG. 9 is expressed as shown in FIG.

  Schematic sectional structure showing a step of forming the first electrode layer 26a and the second electrode layer 26b on the first insulating layer 24a and the second insulating layer 24b of the laminated LED bar 36 and a part of the surface electrode layer 20 Is expressed as shown in FIG.

  A method for manufacturing the semiconductor light emitting device according to the first embodiment will be described below.

(A) First, as shown in FIG. 4A, a first cladding is formed on a GaAs substrate 10 by using molecular beam epitaxy (MBE), MOCVD (Metal Organic Chemical Vapor Deposition), or the like. The layer 12, the MQW layer 14, the second cladding layer 16, and the window layer 18 are sequentially formed.

(B) Next, as shown in FIG. 4B, the surface electrode layer 20 is formed on the window layer 18 by using a sputtering method, a vacuum deposition method, or the like. The material of the surface electrode layer 20 is preferably a transparent conductive film. For example, a thin titanium layer and an Au layer can be used. Alternatively, it can be formed using ITO, IZTO, ZnO, or the like.

(C) Next, as shown in FIG. 4C, the GaAs substrate 10 is thinned from the back surface. This thinning step can be performed by, for example, lapping, polishing, chemical mechanical polishing (CMP) technology, etching technology, or the like. As a result, for example, the thickness of the substrate 10 can be formed to about 90 μm. The thickness is not limited to this, and is about 30 μm to 250 μm.

(D) Next, as shown in FIG. 4D, the back electrode layer 22 is formed on the substrate 10 by sputtering, vacuum evaporation, or the like. As the material of the back electrode layer 22, for example, an Au layer or a laminated structure made of Au / AuGe-Ni alloy / Au can be used.

(E) Next, as shown in FIG. 5A, the LED wafer 34 is cleaved along the cleavage plane. As a result, as shown in FIG. 5B, a plurality of LED bars 36 having a width W and a length L can be formed. Not only cleavage but also dicing and scribing are possible.

(F) Next, as shown in FIG. 6, a laminated structure 50 in which a plurality of LED bars 36 and silicon bars 40 are laminated is inserted into the LED bar fixing device 38. Here, the detailed structure of the laminated structure 50 is expressed as shown in FIG. Since the structure of the silicon bar 40 has a convex shape as shown in FIG. 8, in the stacked structure 50, a part of the front electrode layer 20 and a part of the back electrode layer 22 are covered with the silicon bar 40. .

(G) Next, with the laminated structure 50 inserted into the LED bar fixing device 38, as shown in FIG. 9, the first insulating layer 24a and the second insulating layer 24b are formed by sputtering. That is, the first insulating layer 24a and the second insulating layer 24b are formed on the surface of the surface electrode layer 20 by the width of W3, respectively. Further, a first insulating layer 24a and a second insulating layer 24b are formed on the surface of the back electrode layer 22 by the width of W2 + W3, respectively. Here, the width W of the LED bar 36 has a relationship of W− (W1 + 2W2) = 2W3. In FIG. 9, although an insulating layer is also formed on the side wall surface of the silicon bar 40, the illustration is omitted for the sake of simplicity.

(H) Next, as shown in FIG. 10, a plurality of LED bars 36 and inverted silicon bars 40 are stacked to form a stacked structure 50a. Note that the silicon bar 40 used in FIG. 10 is not necessarily applied to the silicon bar 40 used in FIG. 9, and a silicon bar having another dimension is appropriately selected according to the width dimension for forming the electrode layer. Is possible. Further, instead of the silicon bar 40, the LED bar 36 may be reversed.

(I) Next, in a state where the laminated structure 50a is inserted into the LED bar fixing device 38, as shown in FIG. 11, the first electrode layer 26a and the second electrode layer 26b are formed using a sputtering method, a vacuum evaporation method, or the like. Form. That is, the first electrode layer 26a and the second electrode layer 26b are formed on the surface of the surface electrode layer 20 by the width of W2 + W3, respectively. The first electrode layer 26 a and the second electrode layer 26 b are connected to the surface electrode layer 20 with a width of W2. Further, the first electrode layer 26a and the second electrode layer 26b are formed on the surface of the back electrode layer 22 by the width of W3, respectively. Here, the thicknesses D1 and D2 of the silicon bar 40 shown in FIG. 8 are such that the first electrode layer 26a and the second electrode layer 26b formed by using a sputtering method, a vacuum deposition method, or the like can be sufficiently secured. As long as it has a thickness of. In FIG. 11, an electrode layer is also formed on the side wall surface of the silicon bar 40, but the illustration is omitted to simplify the description.

(J) Next, the laminated structure 50a is removed from the LED bar fixing device 38, and the silicon bar 40 is removed. The LED bar 36 is divided, and as a result, the semiconductor light emitting device 1 according to the first embodiment shown in FIG. 1 is obtained.

(K) Next, as shown in FIG. 2, the anode electrode 30a, the anode electrode 30b, and the cathode electrode 28 are formed on the mounting substrate 32 by using a vacuum vapor deposition method, a sputtering method, or the like to obtain a predetermined stripe shape or the like. Pattern.

(L) Next, as shown in FIG. 3, the semiconductor light emitting device 1 is mounted on the mounting substrate 32, and the anode electrode 30a and the anode electrode 30b are respectively connected to the first electrode layer 26a, the second electrode layer 26b, and the cathode electrode. 28 is connected to the back electrode layer 22 by die bonding.

  According to the first embodiment, since there is no metal electrode that does not transmit light on the epitaxial growth layer 8, light loss can be reduced, and light extraction efficiency can be improved.

  According to the first embodiment, since the wire bonding is not required when assembling the semiconductor light emitting device, the package can be thinned.

  According to the first embodiment, since the method for manufacturing a semiconductor light emitting device is simplified, the time required for the manufacturing process up to chip formation can be shortened.

  According to the first embodiment, light is emitted by changing the film thickness of the first insulating layer 24a, the first electrode layer 26a, the second insulating layer 24b, and the second electrode layer 26b to change the reflectance. The directivity of can also be changed.

  According to the first embodiment, by forming the first electrode layer 26a and the second electrode layer 26b as metal electrode layers that do not transmit light, emission of light to the side wall surface can be suppressed.

  According to the first embodiment, it is possible to provide a semiconductor light emitting device with improved light extraction efficiency and easy thin packaging and a method for manufacturing the same.

(Modification)
A schematic cross-sectional structure in which the semiconductor light emitting element according to the first modification of the first embodiment is mounted on a mounting substrate is represented as shown in FIG. 12A, and the semiconductor light emitting element according to the second modification is mounted. A schematic cross-sectional structure mounted on the substrate is expressed as shown in FIG.

  The semiconductor light emitting device 1a according to the first modification of the first embodiment includes only the first electrode layer 26a disposed on the first insulating layer 24a and part of the surface of the surface electrode layer 20, and the second The insulating layer 24b and the second electrode layer 26b are not provided. On the other hand, the semiconductor light emitting device 1a according to the second modification of the first embodiment includes a first electrode layer 26a and a second insulation layer disposed on the first insulation layer 24a and a part of the surface electrode layer 20 on the surface. Only the layer 24b is provided, and the second electrode layer 26b is not provided on the second insulating layer 24b.

  The semiconductor light emitting element 1a according to the first modification and the second modification of the first embodiment is provided with the electrode layer only on one side of the opposing side surface, and thus compared with the semiconductor light emitting element 1 according to the first embodiment. Thus, the light extraction efficiency is improved.

  Further, in the semiconductor light emitting element 1a according to the second modification of the first embodiment, the reflectance may be adjusted by forming the second insulating layer 24b as a dielectric multilayer film.

  In the first and second modifications of the first embodiment, the anode electrode 30a and the first electrode layer 26a are soldered by the solder layer 44.

  According to Modification 1 and Modification 2 of the first embodiment, it is possible to provide a semiconductor light-emitting element that can improve light extraction efficiency and can be easily formed into a thin package, and a method for manufacturing the same.

(Second Embodiment)
A schematic bird's-eye view structure of the semiconductor light emitting device 1b according to the second embodiment is expressed as shown in FIG. Further, a schematic bird's-eye view showing a state in which the semiconductor light emitting element 1b according to the second embodiment is mounted on the mounting substrate 32 is expressed as shown in FIG. Further, a schematic cross-sectional structure in which the semiconductor light emitting element 1b according to the second embodiment is mounted on the mounting substrate 32 is expressed as shown in FIG.

  As shown in FIG. 13, the semiconductor light emitting device according to the second embodiment includes a substrate 10, an epitaxial growth layer 8 disposed on the substrate 10, a surface electrode layer 20 disposed on the epitaxial growth layer 8, The back electrode layer 22 disposed on the back surface of the substrate 10, and the first side wall surface formed of the substrate 10, the epitaxial growth layer 8, the surface of the surface electrode layer 20, and the back electrode layer 22 are formed along the side surface 42 a of the substrate 10. A second insulating layer 24a formed on the surface of the substrate 10 and a side surface 42b formed in parallel with the side surface 42a of the substrate 10 so as to face the side surface 42a. A second insulating layer 24b extending on the side wall surface and the surface of the front electrode layer 20 and the surface of the back electrode layer 22, and the first insulating layer 24a and the second insulating layer 24b; And a first electrode layer 26 disposed on the surface electrode layer 20. In FIG. 13, the first electrode layer 26 may slightly wrap around the lower surface depending on the arrangement of the LED bar 36. It can also be created so that there is no wraparound.

  In FIG. 13, the light emitted from the semiconductor light emitting device 1b according to the second embodiment is emitted isotropically as indicated by hv in the figure.

  As shown in FIGS. 14 and 15, the first electrode layer 26 is connected to the anode electrode 30, and the back electrode layer 22 is connected to the cathode electrode 28.

  As shown in FIGS. 14 and 15, the anode electrode 30 and the cathode electrode 28 may be disposed on the mounting substrate 32, and the anode electrode 30 and the first electrode layer 26 may be soldered by a solder layer 44.

  The epitaxial growth layer 8 includes a first cladding layer 12 disposed on the substrate 10, an MQW layer 14 disposed on the first cladding layer 12, and a second cladding layer 16 disposed on the MQW layer 14. Further, a window layer 18 may be provided on the second cladding layer 16.

  Here, for example, the substrate 10 is formed of GaAs, the first cladding layer 12 and the second cladding layer 16 are formed of an AlInGaP layer, and the MQW layer 14 is formed of an InGaP / AlInGaP pair.

  A back electrode layer 22 is disposed on the back surface of the substrate 10, and a surface electrode layer 20 is disposed on the surface of the window layer 18. The surface electrode layer 20 is a transparent electrode and is made of, for example, ITO, IZTO, or ZnO. The back electrode layer 22 is formed of, for example, an Au layer.

  One or both of the first insulating layer 24a and the second insulating layer 24b are formed of a silicon insulating film, a silicon nitride film, or the like.

  One or both of the first insulating layer 24a and the second insulating layer 24b may include a DBR layer. An example of the DBR layer is the same as that in the first embodiment.

  The first electrode layer 26 includes a transparent electrode layer. An example of the transparent electrode layer is the same as that in the first embodiment.

  In the first embodiment, the LED bar 36 is stacked twice during the formation of the first insulating layer 24a and the second insulating layer 24b and during the formation of the first electrode layer 26a and the second electrode layer 26b. Although the process is necessary, in the second embodiment, the LED bar 36 needs to be stacked only when the first insulating layer 24a and the second insulating layer 24b are formed. Since the second electrode layer 26b is formed as the common electrode layer 26, the step of stacking the LED bars 36 is not necessary.

(Production method)
The method for manufacturing a semiconductor light emitting device according to the second embodiment includes a step of forming the epitaxial growth layer 8 on the substrate 10, a step of forming the surface electrode layer 20 on the epitaxial growth layer 8, and a back surface on the back surface of the substrate 10. The step of forming the electrode layer 22, and the substrate 10 is formed along the side surface 42a of the substrate 10 and extends on the surface of the substrate 10, the first sidewall surface of the epitaxial growth layer 8, the surface electrode layer 20, and the surface of the back electrode layer 22. A second side wall surface and a surface formed of the substrate 10 and the epitaxially grown layer 8, formed along the side surface 42 b formed in parallel to the side surface 42 a of the substrate 10. Extending on the surface of the electrode layer 20 and on the surface of the back electrode layer 22 to form the second insulating layer 24b; on the first insulating layer 24a and the second insulating layer 24b; And forming a first electrode layer 26 on the surface electrode layer 20.

  Also, a step of forming the anode electrode 30 and the cathode electrode 28 on the mounting substrate 32, and a step of connecting the first electrode layer 26 to the anode electrode 30 by soldering and connecting the back electrode layer 22 to the cathode electrode 28 are performed. Have.

  Since the detailed manufacturing process of each other part is the same as that of 1st Embodiment, duplication description is abbreviate | omitted.

  In the step of forming the first electrode layer 26, the LED bars 36 on which the first insulating layer 24a and the second insulating layer 24b are formed are arranged side by side on a plane table, and, for example, a pulse laser deposition (PLD) method is used. For example, it can be formed by forming a ZnO electrode. Therefore, the arrangement of the silicon bar 40 becomes unnecessary, and the manufacturing process is simplified. Note that, depending on the arrangement of the LED bar 36, the ZnO electrode slightly wraps around the lower surface as shown in FIG. It can also be created so that there is no wraparound.

  According to the second embodiment, it is possible to provide a semiconductor light emitting device with improved light extraction efficiency and easy packaging, and a method for manufacturing the same.

(Other embodiments)
As described above, the present invention has been described according to the first to second embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  In the first to second embodiments, examples are disclosed in which the conductivity type of the substrate 10 and the first cladding layer 12 is n-type, and the conductivity type of the second cladding layer 16 and the window layer 18 is p-type. However, these conductivity types may be reversed. In this case, the anode electrode and the cathode electrode have opposite configurations, the first electrode layer and the second electrode layer connected to the surface electrode layer 20 are connected to the cathode electrode, and the back electrode layer 22 is connected to the anode electrode. .

  In the first and second embodiments, a DBR layer may be provided between the substrate 10 and the cladding layer 12.

  In the first to second embodiments, an example in which a GaAs substrate is mainly applied as the substrate 10 is disclosed, but a Si substrate, a SiC substrate, a GaP substrate, a sapphire substrate, or the like can also be applied. is there.

  The first cladding layer 12 and the second cladding layer 16 may be formed of, for example, an AlGaAs layer, and the MQW layer 14 may be formed by stacking heterojunction pairs made of, for example, a GaAs / GaAlAs layer. Alternatively, a GaN-based light emitting element may be formed.

  The silicon bar 40 is not limited to silicon, and may be a bar formed using other materials.

  As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

  The semiconductor light emitting device and the manufacturing method thereof of the present invention can be used for all semiconductor light emitting devices such as LED devices having a GaAs substrate, Si substrate, SiC substrate, GaP substrate, sapphire substrate and the like.

DESCRIPTION OF SYMBOLS 1, 1a, 1b ... Semiconductor light-emitting device 8 ... Epitaxial growth layer 10 ... Substrate 12 ... N-type cladding layer 14 ... Multiple quantum well (MQW) layer 16 ... P-type cladding layer 18 ... Window layer 20 ... Front electrode layer 22 ... Back electrode Layers 24a, 24b ... Insulating layers 26, 26a, 26b ... Electrode layer 28 ... Cathode electrodes 30, 30a, 30b ... Anode electrode 32 ... Mounting substrate 34 ... LED wafer 36 ... LED bar 38 ... LED bar fixing device 40 ... Silicon bar 42a 42b ... side 44 ... solder layer 50, 50a ... laminated structure

Claims (17)

A substrate,
An epitaxially grown layer disposed on the substrate;
A surface electrode layer disposed on the epitaxial growth layer;
A back electrode layer disposed on the back surface of the substrate;
A first insulating layer formed along the side surface of the substrate and extending on the surface of the substrate, the first sidewall surface comprising the epitaxially grown layer, the surface electrode layer, and the surface of the back electrode layer When,
A semiconductor light emitting device comprising: a first electrode layer disposed on the first insulating layer and a part of the surface electrode layer. Formed along the side surface formed in parallel to the side surface of the substrate, on the substrate, the second side wall surface comprising the epitaxial growth layer, the surface of the surface electrode layer, and the surface of the back electrode layer A second insulating layer disposed extending;
2. The semiconductor light emitting device according to claim 1, further comprising: a second electrode layer disposed on a part of the second insulating layer and on the surface electrode layer.   3. The semiconductor light emitting element according to claim 2, wherein one or both of the first electrode layer and the second electrode layer is connected to an anode electrode, and the back electrode layer is connected to a cathode electrode.   The semiconductor light emitting device according to claim 3, wherein the anode electrode and the cathode electrode are disposed on a mounting substrate.   3. The semiconductor light emitting device according to claim 2, wherein one or both of the first insulating layer and the second insulating layer includes a distributed black reflective layer.   3. The semiconductor light emitting element according to claim 2, wherein one or both of the first electrode layer and the second electrode layer includes a transparent electrode layer.   The epitaxial growth layer includes a first cladding layer disposed on the substrate, a multiple quantum well layer disposed on the first cladding layer, and a second cladding layer disposed on the multiple quantum well layer. The semiconductor light-emitting device according to claim 1, comprising: A substrate,
An epitaxially grown layer disposed on the substrate;
A surface electrode layer disposed on the epitaxial growth layer;
A back electrode layer disposed on the back surface of the substrate;
A first insulating layer formed along the side surface of the substrate and extending on the surface of the substrate, the first sidewall surface comprising the epitaxially grown layer, the surface electrode layer, and the surface of the back electrode layer When,
Formed along the side surface formed in parallel to the side surface of the substrate, on the substrate, the second side wall surface comprising the epitaxial growth layer, the surface of the surface electrode layer, and the surface of the back electrode layer A second insulating layer disposed extending;
A semiconductor light emitting device comprising: a first electrode layer disposed on the first insulating layer, the second insulating layer, and the surface electrode layer.   9. The semiconductor light emitting device according to claim 8, wherein the first electrode layer is connected to an anode electrode, and the back electrode layer is connected to a cathode electrode.   The semiconductor light emitting device according to claim 9, wherein the anode electrode and the cathode electrode are disposed on a mounting substrate, and the anode electrode and the first electrode layer are soldered.   9. The semiconductor light emitting device according to claim 8, wherein one or both of the first insulating layer and the second insulating layer includes a distributed black reflective layer.   The semiconductor light emitting device according to claim 8, wherein the first electrode layer includes a transparent electrode layer.   The epitaxial growth layer includes a first cladding layer disposed on the substrate, a multiple quantum well layer disposed on the first cladding layer, and a second cladding layer disposed on the multiple quantum well layer. The semiconductor light-emitting device according to claim 8. Forming an epitaxially grown layer on the substrate;
Forming a surface electrode layer on the epitaxial growth layer;
Forming a back electrode layer on the back surface of the substrate;
A first insulating layer is formed along a side surface of the substrate and extends on the substrate, the first sidewall surface made of the epitaxial growth layer, the surface of the front electrode layer, and the surface of the back electrode layer. Process,
Formed along the side surface formed in parallel to the side surface of the substrate, on the substrate, the second side wall surface comprising the epitaxial growth layer, the surface of the surface electrode layer, and the surface of the back electrode layer Extending a second insulating layer; and
Forming a first electrode layer on the first insulating layer and part of the surface electrode layer;
And a step of forming a second electrode layer on the second insulating layer and on a part of the surface electrode layer. Forming an anode electrode and a cathode electrode on a mounting substrate;
The method according to claim 14, further comprising: connecting one or both of the first electrode layer and the second electrode layer to the anode electrode and connecting the back electrode layer to the cathode electrode. Manufacturing method of light emitting element. Forming an epitaxially grown layer on the substrate;
Forming a surface electrode layer on the epitaxial growth layer;
Forming a back electrode layer on the back surface of the substrate;
A first insulating layer is formed along a side surface of the substrate and extends on the substrate, the first sidewall surface made of the epitaxial growth layer, the surface of the front electrode layer, and the surface of the back electrode layer. Process,
Formed along the side surface formed in parallel to the side surface of the substrate, on the substrate, the second side wall surface comprising the epitaxial growth layer, the surface of the surface electrode layer, and the surface of the back electrode layer Extending a second insulating layer; and
Forming a first electrode layer on the first insulating layer, the second insulating layer, and the surface electrode layer. A method for manufacturing a semiconductor light emitting element. Forming an anode electrode and a cathode electrode on a mounting substrate;
The method according to claim 16, further comprising: connecting the first electrode layer to the anode electrode by soldering and connecting the back electrode layer to the cathode electrode.

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