JP2023041840A - Vertical resonator surface-emitting laser element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vertical resonator surface-emitting laser element capable of stabilizing a shape of an oscillated laser beam.

SOLUTION: The present invention relates to a vertical resonator surface-emitting laser element comprising: a first light reflection film; a laminate of a nitride semiconductor formed by successively laminating an n-side semiconductor layer, an active layer and a p-side semiconductor layer including a current injection region on a top face of the first light reflection film in this order; a translucent p electrode being in contact with a top face of the current injection region and extending to a surface of a periphery of the current injection region; a second light reflection film disposed on the p electrode, disposed in at least a portion from the top face of the current injection region to the surface of the periphery of the current injection region and including a dielectric lamination film; and an insulation film separated from the top face of the current injection region and covering at least a portion of a side face of the laminate.

SELECTED DRAWING: Figure 1B

COPYRIGHT: (C)2023,JPO&INPIT

Description

The present disclosure relates to vertical cavity surface emitting laser devices.

Conventionally, research has been conducted on a laser device that functions as a vertical cavity surface emitting laser using a nitride semiconductor. (See Patent Document 1, etc.).
As a current confinement structure for a p-type semiconductor layer of a surface emitting laser device having a GaN-based semiconductor laminate, for example, an insulating film having an opening is formed on the surface of the p-type semiconductor layer, and the p-type semiconductor layer exposed in the opening is formed. A structure in which a transparent electrode such as ITO is formed on the surface of a semiconductor layer can be mentioned. The portion where the p-type semiconductor layer and the transparent electrode are in contact with each other in the opening of the insulating film is the current injection region of the surface emitting laser device. A light reflecting layer made of a dielectric multilayer film is provided on the surface of the transparent electrode opposite to the semiconductor layer from the inside to the outside of the opening of the insulating film. That is, the dielectric multilayer film is provided in a stepped region.

JP 2015-035541 A

However, in such a surface-emitting laser element, since the recessed portion of the step is the current injection region, the dielectric multilayer film is affected by the step, and the step region becomes closer to the center of the current injection region as the layers are piled up. Get closer. The reflectance of the dielectric multilayer film is different between the flat area and the stepped area. Therefore, in such a surface emitting laser element, there is a problem that it is difficult to control the shape of the emitted laser light.
The present disclosure has been made in view of the above problems, and an object of the present disclosure is to provide a vertical cavity surface emitting laser device capable of stabilizing the shape of oscillating laser light.

In one aspect of the present disclosure, the vertical cavity surface emitting laser device has n
a nitride semiconductor laminate in which a side semiconductor layer, an active layer, and a p-side semiconductor layer having a protrusion are stacked in this order;
a translucent p-electrode in contact with the upper surface of the protrusion and extending to a surface surrounding the protrusion;
a second light reflecting film extending from above to the side of the convex portion, disposed on the p-electrode, and including a dielectric laminated film;
An insulating film is provided which is separated from the upper surface of the protrusion and covers at least a part of the surface of the p-side semiconductor layer around the protrusion.

According to the vertical cavity surface emitting laser device of one aspect described above, the shape of the oscillating laser light can be stabilized.

1 is a schematic plan view of a main part for explaining the structure of a vertical cavity surface emitting laser device according to one embodiment of the present invention; FIG. FIG. 1B is a schematic cross-sectional view along line IB-IB of FIG. 1A; 1B is a schematic cross-sectional view of a main part showing a laminated structure in the current confinement structure of the vertical cavity surface emitting laser device of FIG. 1A; FIG. 1B is a schematic cross-sectional view of a main part showing a modification of the vertical cavity surface emitting laser device of FIG. 1A; FIG. 1B is a schematic plan view for explaining a method of manufacturing the vertical cavity surface emitting laser device of FIG. 1A; FIG. 3B is a schematic cross-sectional view along line IIIB-IIIB of FIG. 3A; FIG. 1B is a schematic plan view for explaining a method of manufacturing the vertical cavity surface emitting laser device of FIG. 1A; FIG. FIG. 4B is a schematic cross-sectional view along line IVB-IVB of FIG. 4A; 1B is a schematic plan view for explaining a method of manufacturing the vertical cavity surface emitting laser device of FIG. 1A; FIG. 5B is a schematic cross-sectional view along line VB-VB of FIG. 5A; FIG. FIG. 3 is a schematic vertical cross-sectional view for explaining a method of manufacturing the vertical cavity surface emitting laser device of FIG. 2; FIG. 3 is a schematic longitudinal sectional view for explaining a method of manufacturing the vertical cavity surface emitting laser device of FIG. 2; 1B is a photograph showing a near-field image from above of the vertical cavity surface emitting laser device of FIG. 1A. FIG. FIG. 10 is a schematic cross-sectional view showing a main part of a vertical cavity surface emitting laser device of a modified example;

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, the embodiments described below are for embodying the technical idea of the present disclosure, and unless there is a specific description, the present disclosure is not limited to the following. In addition, the contents described in one embodiment and example can also be applied to other embodiments and examples. The size, thickness, positional relationship, etc. of members shown in each drawing may be exaggerated for clarity of explanation.

As shown in FIGS. 1A and 1B, the vertical cavity surface emitting laser device of one embodiment of the present invention has
It includes a first light reflecting film 1 , a nitride semiconductor laminate 5 , a translucent p-electrode 6 , a second light reflecting film 8 , and an insulating film 7 . The laminated body 5 is arranged on the upper surface of the first light reflecting film 1, and the n-side semiconductor layer 2, the active layer 3, and the p-side semiconductor layer 4 having the convex portion 4a are laminated in this order. The p-electrode 6 contacts the upper surface of the protrusion 4a and extends to the surface surrounding the protrusion 4a. The second light reflecting film 8 is
It extends laterally from above the projection 4a, is arranged on the p-electrode 6, and includes a dielectric laminated film. The insulating film 7 is spaced apart from the upper surface of the protrusion 4a and covers at least part of the surface of the p-side semiconductor layer 4 around the protrusion 4a. That is, the insulating film 7 is not provided on the upper surface of the convex portion 4a.
By using the vertical cavity surface emitting laser device having such a structure, the upper surface of the projection of the p-side semiconductor layer is used as a current injection region, and the portion of the second light reflection film 8 located directly above the current injection region. can be flattened. As a result, light loss due to scattering by the second light reflecting film 8 can be reduced immediately above the current injection region. As a result, the shape of laser light emitted from the vertical cavity surface laser device can be stabilized. In addition, it is possible to reduce the threshold current of the vertical cavity surface emitting laser device. In this specification, the direction from the n-side semiconductor layer 2 to the p-side semiconductor layer 4 is referred to as upward. The direction from the n-side semiconductor layer 2 to the p-side semiconductor layer 4 will be described as the upper side even if the top and bottom of the drawing are reversed.

(Laminate of nitride semiconductor)
The nitride semiconductor laminate 5 includes, for example, the n-side semiconductor layer 2 made of a GaN-based semiconductor, GaN
The active layer 3 made of a GaN-based semiconductor and the p-side semiconductor layer 4 made of a GaN-based semiconductor constitute the first light reflecting film 1 .
They are stacked on top in this order. As a GaN-based semiconductor, for example, AlGaN
, GaN, and InGaN.
The n-side semiconductor layer 2 is a single layer or multiple layers, and is an n-type semiconductor layer doped with an n-type impurity such as Si.
It has one or more mold layers. The active layer 3 includes, for example, a quantum well layer made of InGaN and a GaN
It is a laminate obtained by alternately laminating barrier layers made of The number of laminations can be appropriately set according to the desired properties. The p-side semiconductor layer 4 can have a p-side optical guide layer and a p-side contact layer disposed thereon. The p-side contact layer is a layer doped with p-type impurities such as Mg. The p-side optical guide layer can be a layer doped with p-type impurities at a lower concentration than the p-side contact layer or an undoped layer. In this case, the p-side contact layer is the uppermost layer of the p-side semiconductor layer 4 .

Each thickness of the n-side semiconductor layer 2, the active layer 3, and the p-side semiconductor layer 4 can be appropriately set. The total film thickness from the upper surface of the first light reflecting film 1 to the lower surface of the second light reflecting film 8, which will be described later, is an integer multiple of λ/2n, and is set so that a standing wave is generated between them. Then, they are arranged so that the strongest portion of the standing wave is positioned on the active layer 3 and the weakest portion of the standing wave is positioned on the translucent p-electrode 6, which will be described later.

The stack 5 of nitride semiconductor layers has a protrusion 4 a on the upper surface of the p-side semiconductor layer 4 . This convex part 4
The upper surface of a functions as a current injection region. A light emitting portion is directly below the current injection region. Projection 4a
The planar shape of is circular, elliptical, polygonal, or the like, but a circular shape is preferable in consideration of more uniform current injection into the nitride semiconductor laminate 5 . The size of the upper surface of the convex portion 4a is, for example, a diameter or a side length of 3 μm to 12 μm. The side surface of the convex portion 4a may be perpendicular to the upper surface of the convex portion 4a, or may be inclined. for example,
The convex portion 4a can have a frustum shape. The height of the convex portion 4a is, for example, ten and several nanometers to several hundred nanometers.
m, which can be from 50 nm to 200 nm.
Thus, by forming the convex portion 4a on the upper surface of the p-side semiconductor layer 4, the light emitting portion can be defined. Further, by forming the convex portion 4a, it is possible to give a refractive index difference between the resonator portion and its peripheral portion, thereby enabling light confinement in the lateral direction.

The convex portion 4a protrudes upward. The upper surface of the convex portion 4a is preferably formed by a p-side contact layer doped with p-type impurities at the highest concentration among the p-side semiconductor layers. Although the entire convex portion 4a may be formed only by the p-side contact layer, it is preferable to form the highly doped p-side contact layer with a relatively thin film, while stably forming the convex portion 4a. For this purpose, it is preferable that the height of the convex portion 4a is high to some extent. For this reason, the convex portion 4
Preferably, a has a layer doped or undoped with a p-type impurity at a lower concentration than the p-side contact layer. Such a low-concentration doped or undoped layer is preferably arranged on the surface of the p-side semiconductor layer 4 located around the convex portion 4a. In this case, the low-concentration doped or undoped layer is also arranged below the convex portion 4a. Such lightly doped or undoped layers are, for example, p-side optical guide layers. In other words, the p-type impurity concentration of the layer forming the upper surface of the convex portion 4a is preferably higher than the p-type impurity concentration of the layer forming the surface around the convex portion 4a. As a result, the upper surface of the convex portion 4a can be brought into contact with the translucent p-electrode 6. Next, as shown in FIG. Moreover, even if the surface around the convex portion 4a is in contact with the p-electrode 6,
Substantially no current can be injected into that portion. Therefore, the current can be effectively injected substantially only from the upper surface of the projection 4a. The p-type impurity concentration of the layer forming the surface around the convex portion 4a can be, for example, 1×10 ¹⁷ cm ⁻³ to 1×10 ¹⁹ cm ⁻³ . The p-type impurity concentration is, for example, 1×10 ²⁰ cm ⁻³
˜5×10 ²⁰ cm ⁻³ . The layer forming the surface around the convex portion 4a is, for example, a p-side optical guide layer. The layer forming the upper surface of the projection 4a is the p-side contact layer. In order to form a flat second light reflecting film 8, which will be described later, the upper surface of the convex portion 4a is preferably flat.

In the stack 5 of nitride semiconductor layers, the p-side semiconductor layer 4 and the active layer 3 are removed in the thickness direction at the outer peripheral portion of the convex portion 4a, that is, at the upper surface side of the convex portion 4a, and the n-side semiconductor layer is formed. 2 is preferably partially exposed. As a result, the p-electrode and the n-electrode that supply current to the laser element are formed.
The electrodes can be arranged on the same side of the laminate.

A stack 5 of nitride semiconductor layers is arranged on the first light reflecting film 1 . The first light reflecting film 1 includes, for example, a semiconductor multilayer film and a dielectric multilayer film. A light reflecting film can be obtained by alternately laminating two or more films having different refractive indices. As a semiconductor multilayer film,
Nitride semiconductor layers such as AlGaInN compound semiconductors can be used. Specifically, Ga
N, AlGaN, GaInN, and AlGaInN. Among them, a combination of GaN and AlInN lattice-matched thereto is preferable. As a dielectric laminated film, for example,
Si, Mg, Al, Hf, Nb, Zr, Sc, Ta, Ga, Zn, Y, B, Ti and other oxides, nitrides, or fluorides can be used.
In order to obtain the intended reflectance, the first light reflecting film 1 can appropriately select the material, film thickness, number of layers, etc. that constitute each layer. For example, the thickness of each layer constituting the laminated film is λ/4n (where λ is the oscillation wavelength of the laser and n is the refractive index of the medium constituting each layer), and the oscillation wavelength λ
, can be appropriately set depending on the refractive index n of the material used at the oscillation wavelength λ. Specifically, it is preferably an odd multiple of λ/4n. For example, in a light emitting device having an oscillation wavelength λ of 410 nm, when the first light reflecting film is composed of GaN/AlInN, the thickness of each layer is 40 nm.
nm to 70 nm. The number of laminated films to be laminated can be appropriately set depending on the intended properties. The number of layers of the laminated film may be 2 or more, and may be, for example, 5 to 100 layers. The total thickness of the first light reflecting film 1 can be, for example, 0.08 μm to 7 μm.
The size and shape of the first light reflecting film 1 can be appropriately designed as long as it covers the light emitting portion of the laser element.

The stack 5 of the first light reflecting film 1 and the nitride semiconductor layer can be formed, for example, on the substrate 11 for semiconductor growth by a method known in the art. Convex part 4
The formation of a and the partial exposure of the n-side semiconductor layer 2 may be performed by using methods such as photolithography and etching after forming the stack 5 of nitride semiconductor layers.

(p-electrode 6)
The p-electrode 6 is an electrode for injecting a current from the convex portion 4a of the p-side semiconductor layer 4, and is an electrode in contact with at least the upper surface of the convex portion 4a. The p-electrode 6 may extend to the side surface of the protrusion 4a, or may extend to the upper surface of the p-side semiconductor layer 4 around the protrusion 4a. For example, the p-electrode 6 is arranged from the upper surface of the convex portion 4a through the side surface of the convex portion 4a and onto the p-side semiconductor layer 4 around the convex portion 4a. As described above, when the upper surface of the projection 4a is formed of the p-side contact layer heavily doped with p-type impurities, at least the projection 4a
current can be injected from the p-electrode 6 on the upper surface of the . Moreover, as described above, the convex portion 4a
If the surface of the p-side semiconductor layer 4 located around is formed of a layer doped with a p-type impurity at a low concentration, the p-electrode 6 makes Schottky contact at this portion. Therefore, current is injected only from the p-side contact layer, and current confinement is possible without providing an insulating film between the p-electrode 6 and the p-side semiconductor layer 4 .

The plane area of the p-electrode 6 is not particularly limited as long as it is in contact with the p-side semiconductor layer 4 only. may be sized such that its outer edge is positioned inside the outer edge of the
The p-electrode 6 is a conductive member made of a material that is translucent to the wavelength range of laser oscillation. Translucent materials include indium-tin oxide (ITO, Sn-doped In ₂ O ₃ , including crystalline and amorphous), indium-zinc oxide (IZO), IFO (F-doped In ₂ O ₃ ), tin oxide (SnO ₂ ), ATO (Sb-doped SnO ₂ ), FTO (F-doped SnO ₂ ), zinc oxide (including ZnO, Al-doped ZnO, B-doped ZnO), gallium oxide, titanium Examples of transparent conductive materials include oxides, niobium oxides, nickel oxides, and the like as base materials. A specific example is ITO. The thinner the film thickness, the more the light absorption by the p-electrode 6 can be reduced, while the resistance increases. The film thickness of the p-electrode 6 is, for example, 5 nm to 100 nm.

(Second light reflecting film 8)
The second light reflecting film 8 is arranged on the p-electrode 6 and is arranged from the upper surface of the convex portion 4a to at least part of the surface around the convex portion 4a. With such an arrangement, the second light reflecting film 8 can be formed flat directly above the current injection region. At least a part of the surface surrounding the convex portion 4a is, for example, a region surrounding the convex portion 4a, the diameter or the length of one side of which is about 10% to 50% larger than the diameter or the length of one side of the convex portion 4a. area. It is preferable that the area of the upper surface of the convex portion 4a is small in order to confine the current, but it is easier to form the second light reflecting film 8 if the planar area thereof is large to some extent. Therefore, it is preferable that the second light reflecting film 8 is provided not only on the upper surface of the convex portion 4a but also on a region including at least part of the surface around the convex portion 4a.
The second light reflecting film can be configured including a dielectric multilayer film. The second light reflecting film can have the same structure as the dielectric multilayer film exemplified for the first light reflecting film 1 described above. for example,
_SiO2 / _Nb2O5 , _SiO2 / _Ta2O5 , _{and SiO2 / Al2O3 .} The thickness of each layer is λ/4n (where λ is the oscillation wavelength of the laser and n is the refractive index of the medium that constitutes each layer).
is. The number of laminations can be appropriately set depending on the intended properties. Specifically, when the second light reflecting film 8 is composed of SiO ₂ /Nb ₂ O ₃ or the like, each layer has a thickness of 40 nm to 70 nm. The number of laminated films may be 2 or more, and may be, for example, 5 to 20 layers. The overall thickness of the second light reflecting film 8 is, for example, 0.08 μm to 2.0 μm.
. It can be from 6 μm to 1.7 μm.
It is preferable that the second light reflecting film 8 is arranged apart from the insulating film 7 which will be described later.

(insulating film 7)
The insulating film 7 is arranged apart from the upper surface of the projection 4a. The insulating film 7 covers at least part of the surface of the p-side semiconductor layer 4 around the protrusion 4a. The formation position and thickness of the insulating film 7 are set so that the second light reflecting film 8 is flat directly above the upper surface of the convex portion 4a. The insulating film 7 is the second
It is preferable that the light reflecting film 8 be spaced apart from the light reflecting film 8 . As a result, the second light reflecting film 8 can be arranged flatly directly above the upper surface of the convex portion 4a more reliably. Further, as shown in FIG. 8, the thickness of the insulating film 7 is set so that it does not reach the upper surface of the convex portion 4a, and the insulating film 7 is in contact with the side surface of the convex portion 4a, but only a part of the side surface of the convex portion 4a. It may be arranged to cover less than half. With such an arrangement, the second light reflecting film 8 can be flattened immediately above the upper surface of the convex portion 4a, and the insulating film 7 more reliably ensures that the p-side semiconductor layer 4 around the convex portion 4a is flat. can prevent current injection into the The insulating film 7 may cover not only the p-side semiconductor layer 4 but also the side surface of the active layer 3 and part of the exposed top surface of the n-side semiconductor layer 2 .
may be coated on the sides of the
The insulating film 7 is made of SiOx _- based materials including _SiO2 , SiNy _- based _materials such as SiN, _{SiOxNy -} based materials, _Ta2O5 , _ZrO2 , AlN, _Al2O3 , _{Ga2O3 ,} and the like _. It can be formed from an inorganic material or the like. The material forming the insulating film preferably has a lower refractive index than the material forming the laminate 5 .

(Other members)
(Pad electrode 9p, n-electrode 9n)
The vertical cavity surface emitting laser device 10A further includes a p-pad electrode 9p electrically connected to a translucent p-electrode 6 formed on the p-side semiconductor layer 4, and an exposed n-side semiconductor layer 2. It is preferable that an n-electrode 9n electrically connected to .
These p-pad electrode 9p and n-electrode 9n may be formed of any conductive material commonly used as an electrode in this field. For example, Ti/Pt/Au, Ti/Rh/
Au etc. are mentioned. The pad electrode 9p is preferably arranged in a shape surrounding the outer periphery of the convex portion 4a. As a result, the current can be more uniformly injected into the p-side semiconductor layer 4 from the pad electrode 9p through the p-electrode 6 . Moreover, it is preferable to arrange the pad electrode 9p apart from the second light reflecting film 8 . Since the p-pad electrode 9p is not arranged directly below the second light reflecting film 8 in this manner, the flatness of the second light reflecting film 8 directly above the current injection region can be ensured more reliably.
The n-electrode 9n and the pad electrode 9p may be formed of the same or different materials in a single layer structure, may be formed of the same material in the same laminated structure, or may be formed of different materials in different laminated structures. may be formed. When the n-electrode 9n and the pad electrode 9p are formed from the same material with the same laminated structure, the n-electrode 9n and the pad electrode 9p can be formed in the same process.

(substrate 11)
Since the nitride semiconductor laminate 5 is usually laminated on a substrate for semiconductor growth, the vertical cavity surface emitting laser device may have a substrate 11 for semiconductor growth. When the first light reflecting film 1 is made of a nitride semiconductor, the first light reflecting film 1 is first formed on the substrate 11,
A laminate 5 is formed thereon. Further, after the laminate 5 is formed, the semiconductor growth substrate may be removed from the laminate 5 and the first light reflecting film 1 may be formed on the surface of the laminate 5 exposed by the removal. Examples of the substrate 11 for semiconductor growth include substrates such as nitride semiconductors (such as GaN), sapphire, silicon carbide, and silicon.

(Heat dissipation substrate 12)
The vertical cavity surface emitting laser device described above may be bonded to a heat dissipation substrate 12 as shown in FIG. Examples of the heat dissipation substrate 12 include a semiconductor substrate made of ceramics such as AlN, a semiconductor such as silicon carbide, a single metal substrate, or a metal substrate made of a composite of two or more metals. For example, an insulating AlN ceramic is used as a base material, and a plurality of metal films 15 are formed on the surface thereof.
can be used as the heat dissipation substrate 12 . The metal films 15 are respectively
It is electrically connected to p-pad electrode 9p and n-electrode 9n. When the p-electrode and the n-electrode are arranged with the laminated body 5 interposed therebetween, or when the first light reflecting film 1 side is bonded to the heat dissipation substrate 12, the p
If it is not necessary to electrically connect both the electrode and the n-electrode to the heat dissipation substrate 12, the heat dissipation substrate 12
A conductive substrate such as a metal substrate may be used as the substrate. The film thickness of the heat dissipation substrate 12 is, for example, 5
About 0 μm to 500 μm can be mentioned.
As a method for forming the heat dissipation substrate 12, a method commonly used in the relevant field can be used.

(Antireflection film 14)
The vertical cavity surface emitting laser device described above emits a laser beam from the side of the first light reflecting film 1, and has the above-described substrate 11 on the surface of the first light reflecting film 1 opposite to the laminate 5. In some cases, an antireflection film 14 may be arranged on the surface of the substrate 11 opposite to the laminate 5 . As the antireflection film 14, the same material as the dielectric multilayer film exemplified for the first light reflection film 1 can be used. By making the number of layers and the thickness of each layer different from those of the light reflecting film, a film having an antireflection function can be formed. _For example, _SiO2 / _Nb2O5 , _SiO2 / _Ta2O5 , _S
iO ₂ /Al ₂ O ₃ and the like. Its thickness is, for example, 0.4 μm.

[Manufacturing Method of Vertical Cavity Surface Emitting Laser Device]
The vertical cavity surface emitting laser device described above can be manufactured, for example, by the following method.
First, as shown in FIGS. 3A and 3B, etc., a substrate 11 for semiconductor growth is prepared, a first light reflecting film 1 is formed, and an n-side semiconductor layer 2, Active layer 3 and convex portion 4
The p-side semiconductor layer 4 having the a is laminated in this order to form the laminated body 5 of the nitride semiconductor. After the stack 5 of nitride semiconductor layers is formed, the surface of the n-side semiconductor layer 2 is exposed by removing part of the p-side semiconductor layer 4 and the active layer 3 before and after the formation of the protrusion 4a. be able to.
After that, as shown in FIGS. 3A and 3B, a translucent p-electrode 6 is formed in contact with the upper surface of the convex portion 4a and extending to the surrounding surface of the convex portion 4a.
Subsequently, as shown in FIGS. 4A and 4B, an insulating film 7 is formed to cover the sides of the protrusions 4a of the p-side semiconductor layer 4 and the like. The insulating film 7 may be formed so as not to be in contact with the p-electrode 6 , but preferably formed so as to cover the outer periphery of the p-electrode 6 and partially cover the p-electrode 6 .
Optionally, after forming insulating film 7, p-pad electrode 9p and n-electrode 9n are formed, as shown in FIGS. 5A and 5B. In particular, by forming the p-pad electrode 9p in a ring shape that is larger than the projection 4a and surrounds the upper surface of the projection 4a and its surroundings, the p-pad electrode 9p
The current can be more uniformly injected into the p-side semiconductor layer 4 via the p-electrode 6 from the .
Next, as shown in FIGS. 1A and 1B, a second light reflecting film 8 including a dielectric laminated film is formed.
The second light reflecting film 8 is formed on the p-electrode 6 and on at least part of the surface surrounding the convex portion 4a from the upper surface of the convex portion 4a. It is preferable that the second light reflecting film 8 is spaced apart from the insulating film 7 and arranged so as not to come into contact with the insulating film 7 . By forming the second light reflecting film 8 in this way, the
As shown in C, the second light reflecting film 8 can be arranged flat to the end of the region X on the upper surface of the projection 4a, ie, directly above the current injection region X, more reliably. This will
Carriers can be effectively injected into the light emitting portion. As a result, laser light can be obtained at the light emitting portion. The second light reflecting film 8 only needs to be flatly arranged up to the end of the current injection region X, and may be in contact with the insulating film 7 to that extent.

When bonding the thus obtained vertical cavity surface emitting laser device to a heat dissipation substrate, for example, as shown in FIG. to form a thinned substrate 11a. At this time, the substrate for semiconductor growth may be completely removed. Thinning or removal can be performed using a polishing method, an etching method, or the like known in the art.
Further, as shown in FIG. 6B, an antireflection film 1 is formed on the surface of the substrate 11a opposite to the first light reflecting film 1.
4 may be formed. When the substrate 11 is completely removed, the antireflection film 14 is replaced by the first light reflection film 1
may be formed on the surface of
Furthermore, as shown in FIG. 2, the laminate 5 thus obtained is joined to a heat dissipation substrate 12 . For the bonding layer 13 used for bonding, for example, solder or the like can be used in addition to the same material as the p-pad electrode 9p and the n-electrode 9n described above. The bonding layer 13 can be arranged so as to be bonded to the p-pad electrode 9p and the n-electrode 9n, respectively, and to be bonded to the metal film 15 of the heat dissipation substrate 12, respectively. In this case, the bonding layer 13 is conductive, and the p-pad electrode 9p is connected through the bonding layer 13.
and one metal film 15 are electrically connected, and the n-electrode 9n and another metal film 15 are electrically connected. In addition, the area between the heat dissipation substrate 12 and the obtained laminate 5, that is, the area of the laminate 5 other than the area where the bonding layer 13 is disposed may remain hollow, or may be an insulating heat dissipation member or the like. can be embedded by
For the bonding, for example, after the bonding layer 13 is arranged as shown in FIG.
can be done by softening the
Note that the bonding of the laminate 5 to the heat dissipation substrate 12 may be performed before thinning the substrate 11 and/or forming the antireflection film 14 .

Test example 1
As shown in FIGS. 1A and 1B, the vertical cavity surface emitting laser element 10A includes a GaN substrate 11, a nitride semiconductor laminate 5, a translucent p-electrode 6 (thickness of 30 nm) made of ITO, and a dielectric material. Second light reflecting film 8 (SiO ₂ /Nb ₂ O ₃ , λ/4 thickness, 15.5 pairs) including a body laminated film
Then, a laser device having an insulating film 7 (SiO ₂ , 100 nm thick) was formed. The laminate 5 is
First light reflecting film 1 (GaN/Al _0.8 In _0.2 N=46.6 nm/51.2 nm thick), n-side semiconductor layer 2 (Si-doped GaN), active layer 3 (GaN/InGaN), p-side semiconductor layer 4 (M
g-doped GaN and undoped AlGaN) are laminated in this order. p-side semiconductor layer 4
has a convex portion 4a (height: 70 nm, diameter: 5 μm, top view shape: circular). The p-electrode 6 is in contact with the upper surface of the convex portion 4a and extends to the surrounding surface of the convex portion 4a. The second light reflecting film 8 extends to the side of the convex portion 4 a and is arranged on the p-electrode 6 . The insulating film 7 is spaced apart from the second light reflecting film 8 and covers at least part of the surface of the p-side semiconductor layer 4 around the protrusion 4a. In the laminated body 5, the p-side semiconductor layer 4 and the active layer 3 are partially removed to expose the n-side semiconductor layer 2. On the surface and the p-electrode 6, an n-electrode 9n and a p-pad electrode 9p are formed. (Ti/Pt/A
u, 1.5 nm/200 nm/500 nm) were formed.

When the vertical cavity surface emitting laser element 10A having such a configuration was operated continuously by injecting a current (1 mA) at room temperature, laser light was emitted upward in FIG. 1B. Observing the near-field image (NFP) of the vertical cavity surface emitting laser device 10A from above, it was confirmed that oscillation occurred in the central portion of the current injection region (dotted line), as shown in FIG. In FIG. 7, the shape of the NFP of the laser light is generally circular, and it can be said that the emission intensity is maximum at the central portion. Note that FIG. 7 shows that the closer to white the light is, the higher the emission intensity is.
Thus, the vertical cavity surface emitting laser device 10A in this embodiment can stabilize the shape of the oscillating laser light.

REFERENCE SIGNS LIST 1 first light reflecting film 2 n-side semiconductor layer 3 active layer 4 p-side semiconductor layer 4a convex portion 5 nitride semiconductor laminate 6 p-electrode 7 insulating film 8 second light reflecting film 9p, 9n pad electrode 10A vertical resonator Surface emitting laser element 11 substrate for semiconductor growth 12 heat dissipation substrate 13 bonding layer 14 antireflection film 15 metal film

Claims (9)

a first light reflecting film;
a nitride semiconductor laminate in which an n-side semiconductor layer, an active layer, and a p-side semiconductor layer having a current injection region are laminated in this order on the upper surface of the first light reflecting film;
a translucent p-electrode in contact with the top surface of the current injection region and extending to a surface surrounding the current injection region;
a second light reflecting film including a dielectric laminated film disposed on the p-electrode and extending from the upper surface of the current injection region to at least part of the surface surrounding the current injection region;
an insulating film that is separated from the upper surface of the current injection region and covers at least a portion of the side surface of the laminate;
A vertical cavity surface emitting laser device comprising: 2. The vertical cavity surface emitting laser device according to claim 1, wherein said insulating film covers part of the surface of said p-side semiconductor layer surrounding said current injection region. 3. The vertical cavity surface emitting laser device according to claim 2, wherein said insulating film is separated from said second light reflecting film. 4. The vertical cavity surface emitting laser device according to claim 1, further comprising a p-pad electrode connected to said p-electrode on the side of said current injection region and arranged on said insulating film. 5. The vertical cavity surface emitting laser device according to claim 4, wherein said p-pad electrode is separated from said second light reflecting film. 6. The vertical cavity surface emitting laser device according to claim 1, wherein the first light reflecting film includes a semiconductor multilayer film. The p-side semiconductor layer has a p-side optical guide layer and a p-side contact layer disposed on the p-side optical guide layer,
7. The current injection region according to any one of claims 1 to 6, wherein the current injection region has the p-side contact layer on its upper surface, and the surface surrounding the current injection region is the surface of the p-side optical guide layer. Vertical cavity surface emitting laser device. 8. The vertical cavity surface emitting laser device according to claim 1, further comprising a heat dissipation substrate above said second light reflecting film. 9. The n-side semiconductor layer is partially exposed on the upper surface side of the p-side semiconductor layer, and an n-electrode is connected to the n-side semiconductor layer. vertical cavity surface emitting laser device.

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