JPH02162686A - Manufacture of multicolor display type thin film el element - Google Patents
Manufacture of multicolor display type thin film el elementInfo
- Publication number
- JPH02162686A JPH02162686A JP63318034A JP31803488A JPH02162686A JP H02162686 A JPH02162686 A JP H02162686A JP 63318034 A JP63318034 A JP 63318034A JP 31803488 A JP31803488 A JP 31803488A JP H02162686 A JPH02162686 A JP H02162686A
- Authority
- JP
- Japan
- Prior art keywords
- zns
- thin film
- light
- emitting layer
- type thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 18
- 238000005566 electron beam evaporation Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 239000002131 composite material Substances 0.000 abstract description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 abstract 1
- 238000005265 energy consumption Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000003086 colorant Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000004737 colorimetric analysis Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はデイスプレィ装置などに使用される薄膜ＥＬ
素子の製造方法に関し、さらに詳しくは赤および緑の２
原色とその間の全ての中間色の発光が可能な多色表示型
薄膜ＥＬ素子の製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to thin film EL used in display devices, etc.
For more details on the manufacturing method of the device, please refer to the red and green 2
The present invention relates to a method for manufacturing a multicolor display type thin film EL element capable of emitting light of primary colors and all intermediate colors therebetween.
従来、２原色とその中間色の発光が可能な多色表示型の
薄膜ＥＬ素子として、透光性の表示側電極と背面電極と
の間に、発光色が異なる２層の発光層と誘電層を設け、
表示側に透過光が異なる光透過フィルターを交互に設け
ることが行われている（特開昭６３−６６２９９号）。Conventionally, as a multi-color display type thin film EL element capable of emitting light of two primary colors and their intermediate colors, two light-emitting layers and a dielectric layer with different light-emitting colors are placed between a transparent display-side electrode and a back electrode. established,
It has been practiced to alternately provide light transmitting filters that transmit different light on the display side (Japanese Patent Laid-Open No. 63-66299).
このような多色表示型薄膜ＥＬ素子における２層の発光
層としては、発光色が異なる種々の発光層の組み合わせ
が考えられ、たとえば、一般に、電子ビーム蒸着法によ
って形成されるＺｎＳ：Ｍｎ発光層（特開昭６２−４８
３５８号）と、スパッタリング法によって形成されるＺ
ｎＳ：Ｔｂ、Ｆ発光層（特開昭６３−８１７９０号）と
を組み合わせて、表示側に赤色光透過フィルターと緑色
光透過フィルターとを交互に形成する場合は、赤および
緑の２原色とその中間色の発光が可能な多色表示型薄膜
ＥＬ素子が得られる。As the two light emitting layers in such a multicolor display type thin film EL element, various combinations of light emitting layers with different emission colors can be considered.For example, a ZnS:Mn light emitting layer generally formed by electron beam evaporation (Unexamined Japanese Patent Publication No. 62-48
No. 358) and Z formed by sputtering method.
When combining the nS:Tb,F light-emitting layer (Japanese Patent Application Laid-open No. 63-81790) and forming red light transmitting filters and green light transmitting filters alternately on the display side, the two primary colors of red and green and their A multicolor display type thin film EL element capable of emitting neutral color light is obtained.
〔発明が解決しようとする課題］
ところが、透光性の表示側電極と背面電極との間に、Ｚ
ｎＳ：Ｍｎ発光層を電子ビーム蒸着法によって形成し、
ＺｎＳ：Ｔｂ、Ｆ発光層をスパッタリング法によって形
成して積層すると、それぞれの発光層の形成方法が異な
るため、界面での連続した結晶成長が行われず、堆積初
期の結晶性の悪い部分が生じる。このため積層された発
光層にかかる電圧は、個々のＺｎＳ：Ｍｎ発光層および
ＺｎＳ：Ｔｂ、Ｆ発光層にかかる電圧の和にほぼ−敗し
、必然的に高電圧化して、消費電力の増大や駆動回路の
複雑化、高価格化を招くという難点がある。[Problems to be Solved by the Invention] However, there is a Z
forming an nS:Mn light-emitting layer by electron beam evaporation;
When ZnS:Tb,F light-emitting layers are formed and stacked by sputtering, the formation methods for each light-emitting layer are different, so continuous crystal growth does not occur at the interface, resulting in portions with poor crystallinity at the initial stage of deposition. For this reason, the voltage applied to the stacked light emitting layers is almost equal to the sum of the voltages applied to the individual ZnS:Mn light emitting layers and the ZnS:Tb,F light emitting layer, which inevitably increases the voltage and increases power consumption. However, this method has the drawbacks of complicating the driving circuit and increasing the cost.
この発明はかかる欠点を改善するために鋭意検討を重ね
た結果なされたもので、透光性の表示側電極と背面電極
との間に、ＺｎＳ：Ｍｎ発光層とＺｎＳ：Ｔｂ、Ｆ発光
層とを、ともに電子ビーム蒸着法によって積層形成する
ことによって、再発光層の形成時に、連続した結晶成長
が行われるようにし、堆積初期の結晶性の悪い部分の領
域を減少させて、駆動電圧を低下させ、低消費電力で、
しかも安価な多色表示型の薄膜ＥＬ素子が得られるよう
にしたものである。This invention was made as a result of intensive studies to improve this drawback, and includes a ZnS:Mn light-emitting layer and a ZnS:Tb,F light-emitting layer between the transparent display side electrode and the back electrode. By stacking both by electron beam evaporation, continuous crystal growth occurs during the formation of the re-emitting layer, reducing the area of poor crystallinity at the initial stage of deposition and lowering the driving voltage. with low power consumption.
Furthermore, an inexpensive multi-color display type thin film EL element can be obtained.
以下、この発明の多色表示型薄膜ＥＬ素子の実施例を示
す図面を参照しながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a multicolor display type thin film EL device of the present invention will be described with reference to the drawings.
第１図はこの発明の多色表示型薄膜ＥＬ素子の一実施例
を断面図で示したもので、この多色表示型薄膜ＥＬ素子
Ａは、ガラス製の基板１上に、Ａｌ薄膜あるいはインジ
ウム−スズ複合酸化物（以下、ＩＴＯという）やフッ素
を含む酸化スズの如き透明性導電材料の薄膜などからな
る背面電極２を平行ストライプパターンで形成し、この
背面電極２上に、順次、背面側誘電層３、ＺｎＳ：Ｍｎ
発光層４、ＺｎＳ：Ｔｂ、Ｆ発光層５、表示側誘電Ｎ６
を積層形成して、さらに表示側誘電層６上に前記背面電
極２と同様の透明性導電材料の薄膜からなる表示側電極
７を背面側電極２に対して直交する方向の平行ストライ
プパターンで形成している。そして、別のガラス基板８
の下面に、表示側電極７の各ストライプと同じ寸法およ
び間隔で、赤色光透過フィルター９ｒと緑色光透過フィ
ルター９ｇを形成し、これらの赤色光透過フィルター９
ｒと緑色光透過フィルター９ｇを、前記の表示側電極７
に対向させ重ね合わせてつくられている。FIG. 1 is a sectional view showing an embodiment of a multicolor display type thin film EL element A of the present invention. - A back electrode 2 made of a thin film of a transparent conductive material such as tin composite oxide (hereinafter referred to as ITO) or fluorine-containing tin oxide is formed in a parallel stripe pattern, and the back electrode 2 is sequentially coated on the back side. Dielectric layer 3, ZnS:Mn
Light emitting layer 4, ZnS:Tb, F light emitting layer 5, display side dielectric N6
Further, on the display side dielectric layer 6, a display side electrode 7 made of a thin film of a transparent conductive material similar to the back electrode 2 is formed in a parallel stripe pattern in a direction perpendicular to the back side electrode 2. are doing. And another glass substrate 8
A red light transmitting filter 9r and a green light transmitting filter 9g are formed on the lower surface of the display side electrode 7 with the same dimensions and spacing as each stripe of the display side electrode 7, and these red light transmitting filters 9
r and the green light transmitting filter 9g, and the display side electrode 7
It is made by stacking them facing each other.
ここで、ＺｎＳ：Ｍｎ発光層４およびＺｎＳ ：Ｔｂ、
Ｆ発光層５は、ともに電子ビーム蒸着法によって形成す
るのが好ましく、再発光層とも電子ビーム蒸着法によっ
て形成すると、スパッタ法よりも結晶粒が成長しやすく
て、再発光層の形成時に、連続した結晶成長が行いやす
く、堆積初期の結晶性の悪い部分の領域を減少させるこ
とができる。従って、駆動電圧を低下させることができ
、低消費電力で、しかも安価な多色表示型薄膜ＥＬ素子
が得られる。Here, ZnS:Mn light emitting layer 4 and ZnS:Tb,
It is preferable that both the F-emitting layer 5 and the re-emitting layer be formed by electron beam evaporation, and if the re-emitting layer is also formed by electron beam evaporation, crystal grains will grow more easily than in the sputtering method. This facilitates crystal growth and reduces the area of poor crystallinity at the initial stage of deposition. Therefore, the driving voltage can be lowered, and a multicolor display type thin film EL element with low power consumption and low cost can be obtained.
なお、このように再発光層を同じ電子ビーム蒸着法によ
って形成する際、一方の発光層を形成した後、そのまま
同じ真空雰囲気内で直ちに次の発光層を連続して形成す
ると、先に形成した発光層を大気にさらした際の水分や
酸素などの吸着による表面の変質が防止され、同一物質
の堆積に近い状態での再発光層の形成が行えるため、堆
積初期の結晶性の悪い部分の領域を著しく減少させるこ
とができ、−段と駆動電圧を低下させることができる。Note that when forming re-emitting layers using the same electron beam evaporation method in this way, if one emissive layer is formed and then the next emissive layer is immediately formed in succession in the same vacuum atmosphere, the layer formed earlier will This prevents surface deterioration due to adsorption of moisture, oxygen, etc. when the luminescent layer is exposed to the atmosphere, and allows the formation of a re-emitting layer in a state similar to that of the same material deposited. The area can be significantly reduced, and the driving voltage can be lowered significantly.
このようにして形成された多色表示型薄膜ＥＬ素子Ａは
、側電極２．７間に発光層４．５の発光開始電圧以上の
交流電圧を印加した際に、側電極２．７の各交差部分に
おいて再発光層４，５が発光する。そして、この発光は
、発光層４ではＺｎＳ：Ｍｎによる黄橙色発光、発光層
５ではＺｎＳ：’ｒｂ、Ｆによる緑色発光であり、再発
光層４．５が上下に重なっていることから表示側表面へ
は両者の混色発光として到達するが、赤色光透過フィル
ター９ｒの各領域では赤色よりも短波長側の光がカット
されて赤色発光として放出され、緑色光透過フィルター
９ｇの各領域では逆に緑色よりも長波長側の光がカット
されて緑色発光として放出される。The multi-color display type thin film EL element A thus formed is able to operate when an AC voltage higher than the emission starting voltage of the light emitting layer 4.5 is applied between the side electrodes 2.7. The re-emitting layers 4 and 5 emit light at the intersection. This light emission is yellow-orange light emission due to ZnS:Mn in the light-emitting layer 4, and green light emission due to ZnS:'rb, F in the light-emitting layer 5. Since the re-emitting layers 4.5 are stacked vertically, the display side The light reaches the surface as a mixture of both colors, but in each region of the red light transmitting filter 9r, light with a wavelength shorter than red is cut and emitted as red light, and vice versa in each region of the green light transmitting filter 9g. Light with wavelengths longer than green is cut off and emitted as green light.
したがって、画電極２．７のパターンをそのストライブ
が一画素上で多数配置するように細かく設定し、別のガ
ラス基板８の下面に形成された赤色光透過フィルター９
ｒと緑色光透過フィルター９ｇとで、表示側電極７を赤
色光透過フィルター９ｒと対向するストライブ群（以下
、赤色電極部という）と緑色光透過フィルター９ｇと対
向するストライプ群（以下、緑色電極部という）とに分
離して、それぞれ個別に背面電極２との間で電圧を印加
すれば、同一画素を赤緑の２原色および測色間の全ての
中間色の発光で任意に表示することができる。すなわち
、赤色電極部のみの使用によって赤色の原色発光表示、
緑色電極部のみの使用により緑色の原色発光表示がそれ
ぞれ行えるとともに、両電極部の使用によって両全光色
の混合による中間色発光表示が行える。Therefore, the pattern of the picture electrode 2.7 is finely set so that a large number of its stripes are arranged on one pixel, and a red light transmitting filter 9 is formed on the lower surface of another glass substrate 8.
r and the green light transmitting filter 9g, the display side electrode 7 is divided into a stripe group facing the red light transmitting filter 9r (hereinafter referred to as the red electrode section) and a stripe group facing the green light transmitting filter 9g (hereinafter referred to as the green electrode section). By separately applying a voltage to the back electrode 2, the same pixel can be displayed arbitrarily by emitting light in the two primary colors of red and green and all intermediate colors between the colorimetry. can. In other words, by using only the red electrode part, red primary color luminescence display,
By using only the green electrode part, a green primary color light emitting display can be performed, and by using both electrode parts, an intermediate color light emitting display can be performed by mixing both of the two light colors.
なお、中間色発光は、マトリックス表示つまり画素上に
細かいドツト状の赤色発光部と緑色発光部とが平面的に
交互に並んでいるために視覚的に両発光の中間色として
認められるもので、両電極部に印加する電圧、パルス幅
、パルス数、周波数などを変化させて両発光の強度を変
えることにより、赤色に近い混色から緑色に近い混色ま
で全ての中間色発光を任意に選択できるとともに、連続
的な色調変化も行える。Note that intermediate color light emission is visually recognized as a color intermediate between both light emission because of the matrix display, in which fine dot-shaped red light-emitting parts and green light-emitting parts are arranged alternately on a plane on the pixel. By changing the intensity of both lights by changing the voltage, pulse width, number of pulses, frequency, etc. applied to the You can also change the color tone.
赤色光透過フィルター９ｒおよび緑色光透過フィルター
９ｇは、所要の選択的光吸収能を有する色素とバインダ
を含む塗料を調整し、これをフォトリソグラフィーなど
の印刷塗布手段によってガラス基板８の下面にそのパタ
ーンに対応したパターン形状で乾燥後の厚さが０．５〜
２０μｍ程度となるように塗布、乾燥して形成される。The red light transmitting filter 9r and the green light transmitting filter 9g prepare a paint containing a dye and a binder having the required selective light absorption ability, and apply the paint to the lower surface of the glass substrate 8 in a pattern by printing and coating means such as photolithography. The pattern shape corresponds to the thickness of 0.5~ after drying.
It is formed by coating and drying to a thickness of about 20 μm.
赤色光透過フィルター９ｒとしては、波長５７０ｎｍ以
下の光をカットするものが好ましいが、一般には波長５
８０ｎｍ以下の光をカットして波長６００ｎｍ以上の光
を８０％以上透過させるものであればよい。The red light transmitting filter 9r is preferably one that cuts light with a wavelength of 570 nm or less;
Any material may be used as long as it cuts light with a wavelength of 80 nm or less and transmits 80% or more of light with a wavelength of 600 nm or more.
また、緑色光透過フィルター９ｇとしては、カットする
光の波長の下限が低すぎては輝度が不充分となり、逆に
高すぎては色調が黄緑となるため、この下限が５６０〜
５８０ｎｍの範囲となるものが好ましいが、一般には波
長５５０ｎｍ以下で４５０ｎｍ以上の範囲の光を８０％
以上透過させるものであればよい。In addition, for the green light transmission filter 9g, if the lower limit of the wavelength of the light to be cut is too low, the brightness will be insufficient, and if it is too high, the color tone will become yellow-green, so this lower limit should be 560~
It is preferable to use light in the wavelength range of 580 nm, but in general, 80% of the light in the wavelength range of 550 nm or less and 450 nm or more is
Any material that allows the light to pass through may be used.
また、誘電層３および６は、Ｔ ａ ｚ Ｏｓ 、Ａｌ
ｚ Ｏｆｆ、Ｙｚ ０３、ＳｉＯ□、Ｓｉ３Ｎ、 、Ｔ
ｉＯｘ 、Ｎｂｚ Ｏｓ 、ＢａＴ ｉｏｓ 、Ｓ ｒ
Ｔ ｉｏｉ、ＰｂＴｉ０．など既存の誘電材料を用いて
、電子ビーム蒸着や抵抗加熱蒸着の如き真空蒸着法、高
周波スパッタリングの如きスパッタリング法、イオンブ
レーティング法などの既存の種々の真空中薄膜形成法に
よって形成され、各誘電層で異なるものを使用してもよ
（、それぞれの層を構成材料の異なる２層以上の積層物
としても差し支えない。Further, the dielectric layers 3 and 6 are made of T a z Os, Al
z Off, Yz 03, SiO□, Si3N, ,T
iOx, NbzOs, BaTios, Sr
Tioi, PbTi0. It is formed using existing dielectric materials such as vacuum evaporation methods such as electron beam evaporation and resistance heating evaporation, sputtering methods such as radio frequency sputtering, and ion blating methods. Different layers may be used (each layer may be a laminate of two or more layers made of different constituent materials).
次に、この発明の実施例について説明する。 Next, embodiments of the invention will be described.
実施例１
第１図に示すように、ガラス製基板１上に、各ストライ
プ幅が３００μｍで、厚さが１５００人のＡｆｆｉから
なる平行ストライブ状の背面電極２を抵抗加熱蒸着法に
よって形成した。Example 1 As shown in FIG. 1, parallel stripe-like back electrodes 2 each having a stripe width of 300 μm and a thickness of 1500 Affi were formed on a glass substrate 1 by a resistance heating vapor deposition method. .
次に、この背面電極２上に高周波スパッタリング法によ
ってＴａ、Ｏ，からなる厚さ５０００人の背面側誘電層
３を形成した後、この上に電子ビーム蒸着法によって、
基板温度２００°Ｃ１膜形成速度５人／ｓｅｃで、厚さ
５０００の人のＺｎＳ ：Ｍｎ発光層４を形成し、引き
続き連続して、同じ真空槽内で電子ビーム蒸着法により
、同じ条件で厚さ５０００人のＺｎＳ：Ｔｂ、Ｆ発光層
５を積層形成した。そして、この上にさらに高周波スパ
ッタリング法によってＴａｚ ｏｓからなる厚さ５００
０人の表示側誘電層６を形成した。Next, a back side dielectric layer 3 made of Ta and O with a thickness of 5,000 wafers was formed on this back electrode 2 by high frequency sputtering method, and then on this by electron beam evaporation method.
A ZnS:Mn light emitting layer 4 with a thickness of 5,000 mm was formed at a substrate temperature of 200° C. and a film formation rate of 5 persons/sec. A total of 5,000 ZnS:Tb,F light emitting layers 5 were laminated. Then, on top of this, a 500 mm thick layer of Taz os was formed by high frequency sputtering.
The display side dielectric layer 6 was formed for 0 people.
次いで、この表示側誘電層６上に、各ストライプ幅が３
００μｍで、厚さが２０００人のＩＴＯ膜からなる平行
ストライブ状の表示側電極７を、電子ビーム蒸着法によ
って背面電極２のストライブパターンに対して直交する
ように形成した。Next, on this display side dielectric layer 6, each stripe width is 3
A parallel stripe-shaped display side electrode 7 made of an ITO film having a thickness of 00 μm and a thickness of 2000 μm was formed perpendicularly to the stripe pattern of the back electrode 2 by electron beam evaporation.
一方、別のガラス基板８の下面に、厚さ約１μｍの赤色
光透過フィルター９ｒおよび緑色光透過フィルター９ｇ
を、フォトリソグラフィーによって表示側電極７の各ス
トライプと同じ寸法および間隔に形成し、これを表示側
電極７に対向させて重ね合わせ、多色表示型薄膜ＥＬ素
子Ａを作製した。On the other hand, on the lower surface of another glass substrate 8, a red light transmitting filter 9r and a green light transmitting filter 9g each having a thickness of about 1 μm are placed.
were formed by photolithography to have the same dimensions and spacing as each stripe of the display-side electrode 7, and these were stacked facing the display-side electrode 7 to produce a multicolor display type thin film EL element A.
なお、このＥＬ素子Ａの赤色光透過フィルター９ｒは波
長５８０ｎｍ以下の光をカットして波長６００ｎｍ以上
の光を９５％透過させるものであり、緑色光透過フィル
ター９ｇは波長５７０ｎｍ以上の光をカットして波長５
５０ｎｏ＋以下の光を８５％透過させるものであった。Note that the red light transmitting filter 9r of this EL element A cuts light with a wavelength of 580 nm or less and transmits 95% of light with a wavelength of 600 nm or more, and the green light transmitting filter 9g cuts light with a wavelength of 570 nm or more. wavelength 5
It allowed 85% of the light below 50no+ to pass through.
また、表示側電極７は、赤色光透過フィルター９ｒと対
向するストライブ群である赤色電極部と、緑色光透過フ
ィルター９ｇと対向するストライブ群である緑色電極部
とで、別途に印加電圧、パルス幅、パルス数、周波数な
どを調整しうるように設定した。Further, the display side electrode 7 has a red electrode portion which is a stripe group facing the red light transmission filter 9r and a green electrode portion which is a stripe group facing the green light transmission filter 9g. It is set so that the pulse width, number of pulses, frequency, etc. can be adjusted.
実施例２
実施例１において、ＺｎＳ：Ｍｎ発光層４を電子ビーム
蒸着法によって形成したのち、これを−旦真空槽から大
気中に出し、再び真空槽内に入れて実施例１と同じ電子
ビーム蒸着法によってＺｎＳ：Ｔｂ、Ｆ発光層５を形成
した以外は、実施例１と同様にして多色表示型薄膜ＥＬ
素子を作製した。Example 2 In Example 1, the ZnS:Mn light-emitting layer 4 was formed by electron beam evaporation, and then it was taken out of the vacuum chamber into the atmosphere, then put back into the vacuum chamber, and exposed to the same electron beam as in Example 1. A multicolor display type thin film EL was prepared in the same manner as in Example 1 except that the ZnS:Tb,F light emitting layer 5 was formed by vapor deposition.
The device was fabricated.
比較例１
実施例１において、ＺｎＳ：Ｔｂ、Ｆ発光層５の形成を
、電子ビーム蒸着法に代えてスパッタリング法によって
行い、５０００人の厚さに形成した以外は、実施例１と
同様にして多色表示型薄膜ＥＬ素子を作製した。Comparative Example 1 The same procedure as in Example 1 was carried out, except that the ZnS:Tb,F light emitting layer 5 was formed by sputtering instead of electron beam evaporation, and was formed to a thickness of 5000 nm. A multicolor display type thin film EL device was fabricated.
比較例２
実施例１において、ＺｎＳ：Ｍｎ発光層４およびＺｎＳ
：Ｔｂ、Ｆ発光層５の形成を、ともに電子ビーム蒸着法
に代えてスパッタリング法によって行い、各々５０００
人の厚さに形成した以外は、実施例１と同様にして多色
表示型薄膜ＥＬ素子を作製した。Comparative Example 2 In Example 1, ZnS:Mn light emitting layer 4 and ZnS
:The Tb and F light emitting layers 5 were both formed by sputtering method instead of electron beam evaporation method, and each
A multicolor display type thin film EL element was produced in the same manner as in Example 1 except that it was formed to have a human thickness.
各実施例および比較例で得られた多色表示型薄膜ＥＬ素
子について、ＩＫＨｚ正弦波駆動における輝度−電圧特
性を調べた。第２図はその結果をグラフで表したもので
ある。The brightness-voltage characteristics of the multicolor display type thin film EL devices obtained in each Example and Comparative Example under IKHz sine wave driving were investigated. Figure 2 shows the results graphically.
第２図から明らかなように、実施例１および２で得られ
た多色表示型薄膜ＥＬ素子は、比較例１および２で得ら
れた多色表示型薄膜ＥＬ素子に比し、輝度が同等で、発
光開始しきい値電圧が低（、このことからこの発明の製
造方法によれば、駆動電圧が低く、消費電力が少なくて
、安価な多色表示型薄膜ＥＬ素子が得られることがわか
る。As is clear from FIG. 2, the multicolor display type thin film EL devices obtained in Examples 1 and 2 have the same luminance as the multicolor display type thin film EL devices obtained in Comparative Examples 1 and 2. The threshold voltage for starting light emission is low (This shows that according to the manufacturing method of the present invention, an inexpensive multi-color display type thin film EL element with low driving voltage and low power consumption can be obtained. .
第１図はこの発明の製造方法で得られる多色表示型薄膜
ＥＬ素子の一実施例を示す断面図、第２図は実施例およ
び比較例で得られた多色表示型薄膜ＥＬ素子の輝度−電
圧特性図である。
２・・・背面電極、３．６・・・誘電層、４・・・Ｚｎ
Ｓ ：Ｍｎ発光層、５−ＺｎＳ：Ｔｂ、Ｆ発光層、７・
・・表示側電極、９ｒ・・・赤色光透過フィルター、９
ｇ−・・緑色光透過フィルター、Ａ・・・多色表示型薄
膜ＥＬ素子
第１図
背面電極
誘電層
ＺｎＳ：Ｍｎ発光層
ＺｎＳ：Ｔｂ、Ｆ発光層
表示側電極
赤色光透過フィルター
緑色光透過フィルター
多色表示型薄膜ＥＬ素子FIG. 1 is a sectional view showing an example of a multicolor display type thin film EL element obtained by the manufacturing method of the present invention, and FIG. 2 is a luminance of the multicolor display type thin film EL element obtained in the example and comparative example. - It is a voltage characteristic diagram. 2... Back electrode, 3.6... Dielectric layer, 4... Zn
S: Mn light emitting layer, 5-ZnS:Tb, F light emitting layer, 7.
...Display side electrode, 9r...Red light transmission filter, 9
g-...Green light transmission filter, A...Multicolor display type thin film EL element Figure 1 Back electrode dielectric layer ZnS:Mn light emitting layer ZnS:Tb,F light emitting layer Display side electrode Red light transmission filter Green light transmission filter Multicolor display type thin film EL element
Claims (2)
：Ｍｎ発光層とＺｎＳ：Ｔｂ、Ｆ発光層との２層の発光
層と誘電層を適宜に積層形成し、表示側に赤色光透過フ
ィルターと緑色光透過フィルターとを交互に形成して、
多色表示型簿膜ＥＬ素子を製造するに際し、ＺｎＳ：Ｍ
ｎ発光層とＺｎＳ：Ｔｂ、Ｆ発光層とを、ともに電子ビ
ーム蒸着により積層形成することを特徴とする多色表示
型薄膜ＥＬ素子の製造方法1. ZnS is placed between the transparent display side electrode and the back electrode.
:Mn light emitting layer and ZnS:Tb,F light emitting layer, two light emitting layers and a dielectric layer are appropriately laminated, and red light transmission filters and green light transmission filters are alternately formed on the display side.
When manufacturing a multicolor display type film EL device, ZnS:M
A method for manufacturing a multicolor display type thin film EL device, characterized in that an n-light emitting layer and a ZnS:Tb,F light-emitting layer are both laminated by electron beam evaporation.
、同じ真空雰囲気内で電子ビーム蒸着により連続して形
成する請求項１記載の多色表示型薄膜ＥＬ素子の製造方
法2. The method for manufacturing a multicolor display type thin film EL device according to claim 1, wherein the ZnS:Mn light emitting layer and the ZnS:Tb,F light emitting layer are successively formed by electron beam evaporation in the same vacuum atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63318034A JPH02162686A (en) | 1988-12-15 | 1988-12-15 | Manufacture of multicolor display type thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63318034A JPH02162686A (en) | 1988-12-15 | 1988-12-15 | Manufacture of multicolor display type thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02162686A true JPH02162686A (en) | 1990-06-22 |
Family
ID=18094758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63318034A Pending JPH02162686A (en) | 1988-12-15 | 1988-12-15 | Manufacture of multicolor display type thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02162686A (en) |
-
1988
- 1988-12-15 JP JP63318034A patent/JPH02162686A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4945009A (en) | Electroluminescence device | |
| US4954747A (en) | Multi-colored thin-film electroluminescent display with filter | |
| JPH01315988A (en) | Full color display type film electroluminescence element | |
| JP3915246B2 (en) | EL display device | |
| JPH02162686A (en) | Manufacture of multicolor display type thin film el element | |
| JPH0377640B2 (en) | ||
| JPH0521278Y2 (en) | ||
| JPH08162273A (en) | Thin film el element | |
| JPS63299092A (en) | Thin film electroluminescent panel | |
| JPH03194895A (en) | Multicolor el display | |
| JPH01239793A (en) | Polychromatic display type thin film electroluminescence element | |
| JPH01315987A (en) | Multicolor display type film electroluminescence element | |
| JPH088064A (en) | Electroluminescent element and multicolor-emission electroluminescent element | |
| JPH02112195A (en) | Multicolor display type electroluminescence element | |
| JP2529296B2 (en) | Color EL display device | |
| JP2532506B2 (en) | Color EL display device | |
| JPH02162688A (en) | Multicolor display type thin film el element and manufacture thereof | |
| JPH01315991A (en) | Film type electroluminescence element and method for its driving | |
| JPH0756836B2 (en) | Thin film EL device | |
| JPH0693386B2 (en) | Thin film EL device | |
| JPH02234393A (en) | Multi-color display type thin film electroluminescence element | |
| JPH02189888A (en) | Multi-color display type el element | |
| JP2671301B2 (en) | Thin film light emitting device | |
| JPH02112194A (en) | Mulitcolor display type electroluminescence element | |
| JPH0676949A (en) | High intensity color el panel |