JPH0521278Y2 - - Google Patents
Info
- Publication number
- JPH0521278Y2 JPH0521278Y2 JP1984142352U JP14235284U JPH0521278Y2 JP H0521278 Y2 JPH0521278 Y2 JP H0521278Y2 JP 1984142352 U JP1984142352 U JP 1984142352U JP 14235284 U JP14235284 U JP 14235284U JP H0521278 Y2 JPH0521278 Y2 JP H0521278Y2
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- electrode
- color
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 description 36
- 239000005083 Zinc sulfide Substances 0.000 description 11
- 229910052984 zinc sulfide Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 239000000975 dye Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000001045 blue dye Substances 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001046 green dye Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000001044 red dye Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【考案の詳細な説明】
(イ) 産業上の利用分野
本考案は歩留りが高く色ずれのないカラー薄膜
EL素子に関する。[Detailed explanation of the invention] (a) Industrial application field This invention is a color thin film with high yield and no color shift.
Regarding EL elements.
(ロ) 従来技術
最近薄膜EL素子が表示装置に用いられる傾向
にあり、特に赤、緑、青の各色を発光する薄膜
EL素子を重ねて任意の色を表示するフルカラー
薄膜EL素子が開発されている。この種のカラー
薄膜EL素子で任意の色を発光する方式には、赤
色発光体、緑色発光体、青色発光体を縦方向に重
ねて形成し、各色発光体を適当な比率で発光させ
一点で混合させる方式と、赤、緑、青の発光体を
同一平面に並べて発光させ視覚により空間的に混
合させる方式とがあり、市販のカラーCRTのほ
とんどはこの後者の方式を採用している。(b) Prior art Recently, thin film EL elements have been used in display devices, and in particular, thin film EL elements that emit red, green, and blue colors have become more popular.
Full-color thin-film EL devices have been developed that display any color by stacking EL devices. In order to emit light in any color using this type of color thin-film EL device, a red light emitter, a green light emitter, and a blue light emitter are stacked vertically, and each color light emitter emits light at an appropriate ratio at a single point. There are two methods: a mixed method, and a method in which red, green, and blue light emitters are lined up on the same plane and emitted light to visually mix them spatially.Most commercially available color CRTs use this latter method.
従来知られているこの後者の方式を用いたカラ
ー薄膜EL素子の一例が特開昭57−157487号に示
されている。第３図はその素子の断面構造を示し
ており、２は樹脂フイルム等よりなる裏面電極用
ベースフイルム、３はこのフイルム２上に印刷法
や蒸着法またはメツキ法等によりストライプ状に
形成された裏面分割電極、４はこの裏面分割電極
３上にスクリーン印刷で積層された発光体層であ
つて、ZnS・Cu系蛍光体等の粉末をシアノエチ
ルロース等の高誘電体高分子に分散して形成した
蛍光体層とチタン酸バリウム等の高誘電体粒子を
高誘電体高分子に分散して形成した絶縁層とから
構成されている。また５はこの発光体層４上に被
着形成された透明導電膜、６はポリエステルフイ
ルムから成る表面電極用ベースフイルム、７はこ
のベースフイルム６上に形成され、発光体層４か
らの発光を青色光、緑色光、赤色光に変換する光
変換層である。 An example of a conventionally known color thin film EL device using the latter method is shown in Japanese Patent Laid-Open No. 157487/1987. Figure 3 shows the cross-sectional structure of the device, where 2 is a base film for the back electrode made of a resin film, etc., and 3 is a stripe-like film formed on this film 2 by a printing method, vapor deposition method, plating method, etc. The back split electrode 4 is a luminescent layer laminated on the back split electrode 3 by screen printing, and is formed by dispersing powder such as ZnS/Cu-based phosphor in a high dielectric polymer such as cyanoethylulose. It consists of a phosphor layer and an insulating layer formed by dispersing high dielectric particles such as barium titanate in a high dielectric polymer. Further, 5 is a transparent conductive film formed on this luminescent layer 4, 6 is a base film for surface electrode made of polyester film, and 7 is formed on this base film 6 to prevent light emission from the luminescent layer 4. This is a light conversion layer that converts blue light, green light, and red light.
このような構成において、透明導電膜５と裏面
分割電極３との間に所定の電圧を印加すると電圧
が印加された部分の発光体層４中の蛍光体が励起
されてEL光を放出する。放出されたEL光は、光
変換層７によつて光変換され光変換されたEL光
を合成することにより、１つのEL装置で多種類
の発光色が得られるが、非導電性の膜である表面
電極用ベースフイルム６の上に酸化インジウムを
ストライプ状に被着させて透明導電膜５を形成し
た後で透明導電膜５と発光体層４とが接するよう
に表面電極用ベースフイルム６を貼り合せて形成
する製造方法であるために、表面電極用ベースフ
イルム６には所定の強度が要求され、表面電極用
ベースフイルム６は所定値以上の膜厚が必要にな
る。 In such a configuration, when a predetermined voltage is applied between the transparent conductive film 5 and the back divided electrode 3, the phosphor in the light emitting layer 4 in the portion to which the voltage is applied is excited and emits EL light. The emitted EL light is converted into light by the light conversion layer 7, and by combining the converted EL light, one EL device can produce many different colors of emitted light. After forming a transparent conductive film 5 by depositing indium oxide in stripes on a certain base film 6 for a surface electrode, a base film 6 for a surface electrode is formed so that the transparent conductive film 5 and the light emitting layer 4 are in contact with each other. Since the manufacturing method involves bonding, the base film 6 for surface electrodes is required to have a predetermined strength, and the base film 6 for surface electrodes is required to have a film thickness of a predetermined value or more.
ところが、この構造の各層の厚さを実寸で考え
てみると、表面電極用ベースフイルム６は一般に
500μm〜1000μmの膜厚が必要であるのに対して
発光体層の膜厚が約1μm程度、透明導電膜の膜厚
も約1μm程度である。つまり表面電極用ベースフ
イルム６の膜厚は発光体層４の膜厚の数100倍に
も及び、透明電極である透明導電膜５と光変換層
７との間が離れてしまうために発光体層４を真上
から見れば光変換層７を通した色に見えるが、斜
めの方向から見ると光変換層７を通さずに見える
ため発光体層４の発光色がそのまま見えてしま
い、見る位置によつて見える色が異なつてしまう
という問題があつた。 However, when considering the actual thickness of each layer in this structure, the base film 6 for surface electrodes is generally
While a film thickness of 500 μm to 1000 μm is required, the thickness of the luminescent layer is about 1 μm, and the thickness of the transparent conductive film is also about 1 μm. In other words, the film thickness of the surface electrode base film 6 is several hundred times the film thickness of the light emitting layer 4, and the distance between the transparent conductive film 5, which is a transparent electrode, and the light conversion layer 7 is large. If you look at the layer 4 from directly above, the color will appear to have passed through the light conversion layer 7, but if you look at it from an angle, you will see the color emitted by the light emitting layer 4 without passing through the light conversion layer 7. There was a problem that the visible colors differed depending on the position.
(ハ) 発明の目的および構成
本発明は上記の点にかんがみてなされたもの
で、どの方向から見た場合でも一定の発光色を見
ることができるカラー薄膜EL素子を提供するこ
とを目的とし、この目的を達成するために、発光
層１４の３つの層が特許請求の範囲に記載の発光
体層を形成している。そして、絶縁層１３，１５
および発光層１４の各膜厚は3000Å〜8000Åの範
囲に形成される。この絶縁層１３，１５として
は、たとえばY2O3やSi3N4等の誘電体材料が用い
られる。(c) Object and structure of the invention The present invention has been made in view of the above points, and an object thereof is to provide a color thin film EL element that allows a constant color of emitted light to be seen when viewed from any direction. To achieve this objective, the three layers of the luminescent layer 14 form the luminescent layer according to the claims. And insulating layers 13, 15
The thickness of the light emitting layer 14 is in the range of 3000 Å to 8000 Å. As the insulating layers 13 and 15, a dielectric material such as Y 2 O 3 or Si 3 N 4 is used, for example.
また、発光層１４としては、発光スペクトル
Ｒ，Ｇ，Ｂの成分を含むたとえばZnS（硫化亜鉛）
に微量のPrF3（フツ化プラセジウム）をドープし
たZnS：PrF3膜と、ZnSに微量のTbF3（フツ化テ
ルビウム）をドープしたZnS：TbF3膜を２段重
ねした複合膜が用いられる。この発光層１４の発
光スペクトルを第４図に示す。このほかにZnS：
PrF3＋ZnS：Mn膜やZnS：SmF3＋ZnS：TbF3
＋ZnS：TmF3膜なども用いられる。 The light-emitting layer 14 may be made of, for example, ZnS (zinc sulfide) containing components of the R, G, and B emission spectra.
A composite film is used in which two layers are used: a ZnS:PrF 3 film doped with a trace amount of PrF 3 (prasedium fluoride) and a ZnS:TbF 3 film in which ZnS is doped with a trace amount of TbF 3 (terbium fluoride). The emission spectrum of this light emitting layer 14 is shown in FIG. Besides this, ZnS:
PrF 3 +ZnS:Mn film or ZnS:SmF 3 +ZnS:TbF 3
+ZnS:TmF 3 film etc. can also be used.
(ニ) 実施例 以下本考案を図面に基づいて説明する。(d) Examples The present invention will be explained below based on the drawings.
第１図は本考案によるカラー薄膜EL素子の一
実施例の断面構造を示しており、ガラス基板１１
の所定の位置にAlなどを材料としたストライプ
状の背面電極１２を真空蒸着およびホトリソグラ
フイ技術を用いて形成する。この上に絶縁層１
３、発光層１４、絶縁層１５を真空蒸着やスパツ
タリングなどで順次積層する。絶縁層１３，１５
およびガラス基板と、該ガラス基板上に形成した
第１の電極と、該第１の電極上に形成した発光層
と、該発光層上に形成した透明な第２の電極とを
有するカラー薄膜EL素子において、特定波長の
光のみを透過させ特定波長以外の波長の光を吸収
する吸収フイルタを前記第２の電極上に直接接触
するように形成した。つづいて真空蒸着とホトリ
ソグラフイ技術を用いて絶縁層１５の上にIn2O3
（酸化インジウム）などの透明電極１６を形成す
る。 FIG. 1 shows a cross-sectional structure of an embodiment of a color thin film EL element according to the present invention, in which a glass substrate 11
A striped back electrode 12 made of Al or the like is formed at a predetermined position using vacuum evaporation and photolithography techniques. Insulating layer 1 on top of this
3. The light emitting layer 14 and the insulating layer 15 are sequentially laminated by vacuum evaporation, sputtering, or the like. Insulating layers 13, 15
and a color thin film EL having a glass substrate, a first electrode formed on the glass substrate, a light emitting layer formed on the first electrode, and a transparent second electrode formed on the light emitting layer. In the element, an absorption filter was formed on the second electrode so as to be in direct contact with it, allowing only light of a specific wavelength to pass therethrough and absorbing light of wavelengths other than the specific wavelength. Next, In 2 O 3 was deposited on the insulating layer 15 using vacuum evaporation and photolithography.
A transparent electrode 16 made of (indium oxide) or the like is formed.
最後に背面電極１２と透明電極１６とが交叉す
る所定の領域に赤色色素、緑色色素、青色色素が
交互に配置されるように、スクリーン印刷の技術
を用いてＲ，Ｇ，Ｂのフイルタ１７Ｒ，１７Ｇ，
１７Ｂが透明電極１６と直接接触するように形成
する。 Finally, R, G, and B filters 17R are formed using screen printing technology so that the red dye, green dye, and blue dye are alternately arranged in a predetermined area where the back electrode 12 and the transparent electrode 16 intersect. 17G,
17B is formed so as to be in direct contact with the transparent electrode 16.
こうして形成したカラー薄膜素子のガラス基板
１１側の背面電極１２とこれと対向する透明電極
１６との間に1KHz、200V程度の交流電圧を印
加すると発光層１４でＲ，Ｇ，Ｂの波長成分を持
つ光が発生し透明電極１６から薄膜EL素子の外
部に放出されるが、吸収フイルタがあるため、フ
イルタ１７Ｒの下の薄膜EL素子からはこのうち
Ｒ成分だけが、また、フイルタ１７Ｇの下の薄膜
EL素子からはＧ成分だけが、フイルタ１７Ｂの
下の薄膜EL素子からはＢ成分だけが放出される。
薄膜EL素子の発光強度を制御することによつて、
Ｒ，Ｇ，Ｂの輝度および輝度比を自由に設定でき
るので、テレビと同様の走査を行えば、任意の画
像を任意の色調、任意の明るさで表示できる。 When an AC voltage of about 1 KHz and 200 V is applied between the back electrode 12 on the glass substrate 11 side of the color thin film element thus formed and the transparent electrode 16 facing thereto, the light-emitting layer 14 emits R, G, and B wavelength components. However, since there is an absorption filter, only the R component is emitted from the thin film EL element under the filter 17R, and only the R component is emitted from the thin film EL element under the filter 17G. thin film
Only the G component is emitted from the EL element, and only the B component is emitted from the thin film EL element below the filter 17B.
By controlling the emission intensity of thin film EL elements,
Since the brightness and brightness ratio of R, G, and B can be freely set, any image can be displayed in any color tone and any brightness by scanning in the same way as on a television.
このように、吸収フイルタを薄膜EL素子の上
に外設する構成を取つているため従来のカラー薄
膜EL素子のようにフイルタが膜剥離の原因にな
ることがなくパネルの歩留りを格段に向上させる
ことができる。 In this way, since the absorption filter is installed externally on top of the thin-film EL element, the filter does not cause film peeling like in conventional color thin-film EL elements, dramatically improving the yield of panels. be able to.
また、フイルタとして視角特性のない吸収フイ
ルタを採用しているため、どの方角から見ても同
じ色調に見え、従来のように視角による制限が全
くない。 Furthermore, since an absorption filter without viewing angle characteristics is used as a filter, the color tone appears to be the same no matter which direction it is viewed from, and there is no restriction due to viewing angle as in the past.
フイルタを形成するのにスクリーン印刷技術を
用いているので、極めて小さな（最小100μm×
100μm）フイルタを大きなパネル全面にわたつて
形成することも可能で、従来製作が困難であつた
大型パネルやドツトの細いパネルも実現できる。 Screen printing technology is used to form the filter, so it is extremely small (minimum 100μm x
It is also possible to form a filter (100μm) over the entire surface of a large panel, making it possible to create large panels and panels with thin dots that were previously difficult to manufacture.
第２図は本考案によるカラー薄膜EL素子の他
の実施例を示す。 FIG. 2 shows another embodiment of the color thin film EL device according to the present invention.
この実施例は、Ｒ，Ｇ，Ｂの各吸収フイルタを
予め形成した透明な樹脂フイルムを薄膜EL素子
に形成した基板に貼り合わせるかまたは極めて接
近させて平行配置させたものである。 In this embodiment, a transparent resin film on which R, G, and B absorption filters have been formed in advance is attached to a substrate on which a thin film EL element is formed, or is arranged very close to and parallel to the substrate.
まずガラス基板１１上に前記実施例と同じよう
に背面電極１２、絶縁層１３、発光層１４、絶縁
層１５、透明電極１６を形成して薄膜EL素子を
構成する。一方、透明な樹脂フイルム２０を用意
し、この上にＲ，Ｇ，Ｂの各成分を透過するフイ
ルタ２１Ｒ，２１Ｇ，２１Ｂを所定の位置にスク
リーン印刷する。ガラス基板１１と樹脂フイルム
２０を薄膜EL素子とフイルタとが向き合うよう
に貼り合わせてカラーELパネルが完成する。 First, a back electrode 12, an insulating layer 13, a light emitting layer 14, an insulating layer 15, and a transparent electrode 16 are formed on a glass substrate 11 in the same manner as in the previous embodiment to construct a thin film EL device. On the other hand, a transparent resin film 20 is prepared, and filters 21R, 21G, and 21B that transmit each of the R, G, and B components are screen-printed on the film at predetermined positions. A color EL panel is completed by bonding the glass substrate 11 and resin film 20 so that the thin film EL element and filter face each other.
本実施例ではフイルタを形成する基体として樹
脂フイルムを用いたが、そのほかの透明基体たと
えばガラス板を用いてもよい。フイルタの形成に
あたつては、スクリーン印刷のほかにカラー写真
技術、その他の手法を用いてもよいことは言うま
でもない。なお、この実施例の発光作用について
は第１図の実施例１と同じなので説明は省略す
る。 In this embodiment, a resin film was used as the substrate forming the filter, but other transparent substrates such as a glass plate may also be used. Needless to say, in forming the filter, color photographic technology or other methods may be used in addition to screen printing. The light emitting action of this embodiment is the same as that of the first embodiment shown in FIG. 1, so a description thereof will be omitted.
なお、本考案でフイルタに用いる色素フイルタ
は実施例で用いた透明な有色顔料のようなものの
ほかに、カラーセロフアンのようなシート状のも
のでもよい。 In addition to the transparent colored pigments used in the examples, the dye filter used in the filter of the present invention may be a sheet-like material such as colored cellophane.
(ホ) 考案の効果
以上説明したように、本考案においては、基板
上に形成した背面電極と透明な第２の電極との間
に発光体層を配置し、透明な第２の電極の前記発
光体層と反対側の所定位置に所定の発光色のみを
透過する色素フイルタ（特定波長は透過させる
が、特定波長以外の波長は吸収する吸収フイル
タ）を設けたので、薄膜EL素子を構成する膜層
数が少なくなるため膜剥離がなくなり歩留りが向
上するとともに、どの方向から見た場合でも一定
の発光色を見ることができ、色ずれを生ずること
がない。さらに、吸収フイルタの形成にスクリー
ン技術やカラー写真技術を用いれば極めて細かな
パターンが形成できるので大型パネルや絵素の細
かい高精度の表示パネルが実現できる。(e) Effects of the invention As explained above, in the invention, a light-emitting layer is disposed between the back electrode formed on the substrate and the transparent second electrode, and the A dye filter (an absorption filter that transmits a specific wavelength but absorbs wavelengths other than the specific wavelength) that transmits only a specific emitted color is provided at a predetermined position on the opposite side of the light emitting layer, thus forming a thin film EL element. Since the number of film layers is reduced, film peeling is eliminated and yield is improved, and the emitted light color can be seen at a constant level no matter what direction it is viewed from, without color shift. Furthermore, if screen technology or color photography technology is used to form the absorption filter, extremely fine patterns can be formed, making it possible to create large panels or high-precision display panels with fine picture elements.
第１図は本考案によるカラー薄膜EL素子の一
実施例の断面図、第２図は本考案によるカラー薄
膜EL素子の他の実施例の断面図、第３図は従来
のカラー薄膜EL素子の断面図、第４図は本考案
に係る薄膜EL素子の発光スペクトルである。
１１……ガラス基板、１２……背面電極、１３
……絶縁層、１４……発光層、１５……絶縁層、
１６……透明電極、１７Ｒ，１７Ｇ，１７Ｂ……
フイルタ、２０……樹脂フイルム、２１Ｒ，２１
Ｇ，２１Ｂ……フイルタ。
FIG. 1 is a sectional view of one embodiment of a color thin film EL device according to the present invention, FIG. 2 is a sectional view of another embodiment of a color thin film EL device according to the present invention, and FIG. 3 is a sectional view of a conventional color thin film EL device. The cross-sectional view and FIG. 4 show the emission spectrum of the thin film EL device according to the present invention. 11... Glass substrate, 12... Back electrode, 13
...Insulating layer, 14...Light emitting layer, 15...Insulating layer,
16...Transparent electrode, 17R, 17G, 17B...
Filter, 20...Resin film, 21R, 21
G, 21B...Filter.
Claims (1)
の電極と、該第１の電極上に形成した発光層と、
該発光層上に形成した透明な第２の電極とを有す
るカラー薄膜EL素子において、特定波長の光の
みを透過させ特定波長以外の波長の光を吸収する
吸収フイルタを前記第２の電極上に直接接触する
ように形成したことを特徴とするカラー薄膜EL
素子。 a glass substrate; a first plate formed on the glass substrate;
an electrode, a light emitting layer formed on the first electrode,
In a color thin film EL element having a transparent second electrode formed on the light emitting layer, an absorption filter is provided on the second electrode that transmits only light of a specific wavelength and absorbs light of a wavelength other than the specific wavelength. Color thin film EL characterized by being formed in direct contact
element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984142352U JPH0521278Y2 (en) | 1984-09-21 | 1984-09-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984142352U JPH0521278Y2 (en) | 1984-09-21 | 1984-09-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6157497U JPS6157497U (en) | 1986-04-17 |
| JPH0521278Y2 true JPH0521278Y2 (en) | 1993-05-31 |
Family
ID=30700676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984142352U Expired - Lifetime JPH0521278Y2 (en) | 1984-09-21 | 1984-09-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0521278Y2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2531686B2 (en) | 1986-07-03 | 1996-09-04 | 株式会社小松製作所 | Color display device |
| JP2823725B2 (en) * | 1992-01-18 | 1998-11-11 | シャープ株式会社 | Color thin film EL panel |
| JP2781492B2 (en) * | 1992-04-01 | 1998-07-30 | シャープ株式会社 | Color electroluminescence display device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57119494A (en) * | 1981-01-16 | 1982-07-24 | Omron Tateisi Electronics Co | Field light emitting device |
-
1984
- 1984-09-21 JP JP1984142352U patent/JPH0521278Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57119494A (en) * | 1981-01-16 | 1982-07-24 | Omron Tateisi Electronics Co | Field light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6157497U (en) | 1986-04-17 |
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