JPH02161726A - Manufacture of electronic member or electronic device - Google Patents
Manufacture of electronic member or electronic deviceInfo
- Publication number
- JPH02161726A JPH02161726A JP31693388A JP31693388A JPH02161726A JP H02161726 A JPH02161726 A JP H02161726A JP 31693388 A JP31693388 A JP 31693388A JP 31693388 A JP31693388 A JP 31693388A JP H02161726 A JPH02161726 A JP H02161726A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen peroxide
- substrate
- gas
- water
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 22
- 239000012159 carrier gas Substances 0.000 claims abstract description 8
- 238000011282 treatment Methods 0.000 claims description 21
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 150000002978 peroxides Chemical class 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 12
- 239000012535 impurity Substances 0.000 abstract description 10
- 239000002994 raw material Substances 0.000 abstract description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000011368 organic material Substances 0.000 abstract 3
- 229910002090 carbon oxide Inorganic materials 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 25
- 239000007788 liquid Substances 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004821 distillation Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- IMACFCSSMIZSPP-UHFFFAOYSA-N phenacyl chloride Chemical compound ClCC(=O)C1=CC=CC=C1 IMACFCSSMIZSPP-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000003491 tear gas Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は、電子部材または電子デバイスの製造方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing an electronic member or an electronic device.
[従来の技術]
第3図は、例えば日本学術振興会as rWIIllI
ハンドブック」に開示されている従来の電子部材または
電子デバイスの製造方法に用いられる湿式の洗浄装置を
示す構成図である。図において、 (4)は洗浄の対象
とする被処理基板、(10>は基板キャリア、(11)
は基板キャリア搬送装置、(12)は処理槽、(13)
は例えば、過酸化水素水と純水等で構成される処理液、
(14)は超音波発生振動子、(15)は超音波発生振
動子用の高周波電源、(16)は口過用フィルター (
17)は循環ポンプである。[Prior art] Figure 3 shows, for example, the Japan Society for the Promotion of Science
1 is a configuration diagram showing a wet cleaning apparatus used in a conventional method for manufacturing electronic members or electronic devices disclosed in "Handbook". In the figure, (4) is the target substrate to be cleaned, (10> is the substrate carrier, (11)
is a substrate carrier transport device, (12) is a processing tank, (13)
For example, a treatment liquid consisting of hydrogen peroxide solution and pure water, etc.
(14) is an ultrasonic generation transducer, (15) is a high frequency power supply for the ultrasonic generation transducer, (16) is a filter for mouth passage (
17) is a circulation pump.
次に従来の方法の動作を説明する。Next, the operation of the conventional method will be explained.
基板(4)は基板キャリア(lO)に装填されて基板キ
ャリア搬送装置(11)により処理槽(12)に浸漬さ
れる。ここで基板(4)は処理液(14)の酸化作用よ
って処理される。超音波発生振動子(15)から発生す
る超音波の効果は、処理液中の過酸化水素を基板(4〉
の微細構造の細部へ供給する役目を果たす。The substrate (4) is loaded onto a substrate carrier (lO) and immersed in a processing tank (12) by a substrate carrier transport device (11). Here, the substrate (4) is treated by the oxidizing action of the treatment liquid (14). The effect of the ultrasonic waves generated from the ultrasonic generating transducer (15) is to transfer hydrogen peroxide in the processing liquid to the substrate (4).
It plays a role in supplying the details of the microstructure.
処理液の中の過酸化水素は基板(4)の表面の有機物を
酸化分解して基板<4〉を洗浄すると同時に水を生成す
る。また、過酸化水素はシリコン基板などを対象にして
表面を酸化、もしくは親水化する場合にも同様の方法が
用いられる。このようにして処理動作が繰り返され、処
理液(13〉中の過酸化水素濃度が徐々に低下して処理
効果が減少すると、また分解生成物や基板(4)に付着
して処理液(13〉中に持ち込まれた不純物質濃度が一
定(iJJ上になると処理液を更新する。廃棄する処理
液には」、だ高濃度の過酸化水素が残っており十分な処
理を講じた上で処分される。基板(4〉は前プロセスか
らこの洗浄プロセスへ移行する間に一旦処理装置から取
り出されるので外気に晒されて不純物粒子が基板(4〉
に付着する機会を与える。従って処理槽(12)への付
着不純物粒子の持込みは不可避で、この対策として処理
液(13〉は常時循環ポンプ(17)でろ過フィルター
(16)に循環送液し、不純物粒子を分離した後、処理
槽(12)−、戻する過操作が常時行われる。Hydrogen peroxide in the treatment liquid oxidizes and decomposes organic substances on the surface of the substrate (4) to clean the substrate <4> and at the same time generate water. Further, a similar method is used when using hydrogen peroxide to oxidize or make the surface of a silicon substrate or the like hydrophilic. As the treatment operation is repeated in this way, the hydrogen peroxide concentration in the treatment solution (13) gradually decreases and the treatment effect decreases, and decomposition products and substrates (4) are adhered to the treatment solution (13). > When the concentration of impurities brought into the tank is constant (above iJJ), the processing solution is updated.The processing solution to be discarded still contains a high concentration of hydrogen peroxide, and should be disposed of after taking sufficient measures. During the transition from the previous process to this cleaning process, the substrate (4) is once removed from the processing equipment, so it is exposed to the outside air and impurity particles are removed from the substrate (4).
Give it a chance to stick. Therefore, the introduction of adhering impurity particles into the treatment tank (12) is unavoidable, and as a countermeasure to this, the treatment liquid (13) is constantly circulated to the filtration filter (16) with a circulation pump (17) to separate the impurity particles. , processing tank (12)-, over-operation of returning is always performed.
一般に半導体等微細構造の電子部材や電子テ゛・イイス
の製造工程において、使用薬液中に微粒子や溶解性不純
物が混入することは製品の歩留まりの低下をもたらずの
で極力避りなζ」ればならない。In general, in the manufacturing process of microstructured electronic components such as semiconductors and electronic devices, the incorporation of fine particles and soluble impurities into the chemical solution used must be avoided as much as possible to avoid reducing the yield of the product. .
特に微粒子の存在は微細パター・ンの断線に直接つなが
るので確実な除去前処理が必要である。ところが市販の
過酸化水素水はアルトルアントラキノンを用いた自動酸
化法で製造さオするので製造過程でアントラキノンや有
機溶媒が、また、輸送過程で容器からの不純物溶出や過
酸化水素の分解を防止する目的で添加されているコロイ
ド状錫化合物で汚染されたりしており、そのままでは使
用でよない。従って現状では蒸留や精密濾過などの前処
理を行っている。In particular, the presence of fine particles directly leads to breakage of fine patterns, so a reliable pre-removal treatment is required. However, commercially available hydrogen peroxide solutions are manufactured by an automatic oxidation method using alto-anthraquinone, which prevents anthraquinone and organic solvents from being released during the manufacturing process, and prevents impurities from leaching from the container and decomposing hydrogen peroxide during the transportation process. It is contaminated with colloidal tin compounds added for this purpose, and cannot be used as is. Therefore, at present, pretreatments such as distillation and precision filtration are performed.
[発明が解決しようとする課題コ
過酸化水素水を用いた湿式法で基板処理を行う従来の方
法では、前プロセスと洗浄プロセスが個別の装置で行わ
れ、基板取り出し、移動、基板挿入等の搬送プロセスが
途中に不可欠であり、基板への不純物粒子の付着機会を
与えているし、原料の過酸化水素水の汚染が著しく蒸留
や精密濾過等の前処理が不可欠である。また洗浄液中の
過酸化水素濃度が処理の繰り返しにより低下し、このた
め一定の処理効櫂を1準ろために常に濃度管理を行う必
要がある。さらに−度に大量の廃液が発生するので一定
以上の処理能力を持つ廃液処理装置が要求される。この
ように、従来の過酸化水素を利用したl昇式の電子部材
または電子デバイス製造方法は煩雑な管理と付属設備を
必要とするなどの欠点を有していた。[Problems to be Solved by the Invention] In the conventional method of processing substrates using a wet method using hydrogen peroxide, the pre-process and cleaning process are performed in separate devices, and there are many problems such as removing, moving, and inserting the substrate. The transportation process is essential during the process, giving an opportunity for impurity particles to adhere to the substrate, and pretreatment such as distillation and precision filtration is essential, as the raw material hydrogen peroxide water is highly contaminated. Furthermore, the hydrogen peroxide concentration in the cleaning solution decreases with repeated treatments, and therefore it is necessary to constantly control the concentration in order to maintain a certain level of treatment effectiveness. Furthermore, since a large amount of waste liquid is generated each time, a waste liquid treatment device with a certain level of processing capacity is required. As described above, the conventional method for manufacturing electronic components or electronic devices using hydrogen peroxide has drawbacks such as requiring complicated management and auxiliary equipment.
この発明は上記のよ・うな問題点を解消するためになさ
れたもので、原料の前処理を必要としないとともに、濃
度管理が2号わめて容易で、被処理基板の汚染機会を削
減てケる電子部材まメ二l!電子デバイス製造方法を1
!するこノニを目的とする。。This invention was made to solve the above-mentioned problems. It does not require pre-treatment of raw materials, and concentration control is extremely easy, reducing the chances of contamination of the substrate to be processed. Make electronic parts! Electronic device manufacturing method 1
! Aimed at Surukononi. .
[探題を解決するための手段]
二の発明に係わる電子部材よt−・(li、電子デバイ
ス製造方法は、過酸化水素水套・し−v ’lテアガス
中゛蒸発さ七、過酸化水素含有鋏体り生成2、二の過酸
化水素含有鋼1体を被処理基板が設置4トメまた容器中
に供給しで、1−記基板に面を土、記動酸化水束り、イ
ツ気体(−より酸化処理−j′るもの′□+−’&i石
)。[Means for Solving the Problem] The method for manufacturing an electronic device according to the second invention is to evaporate hydrogen peroxide in a tear gas. 2. Place 1 piece of hydrogen peroxide-containing steel into the container where the substrate to be treated is placed. (− from oxidation treatment−j′Rumono′□+−′&i stone).
[作用−に
の発明に1、iζ、1):・過酸化水素水理ているので
、粒づ:吠ネジΔ物が一す1含5、ズ1ず、Cのまま基
板処理が?iえる1、−4,11−1過酸化水垢のa度
;文ゐ弁速度i−’! ’c IJ“γガソ、ンIT?
1艮で一義的)1決めらぜする’:X−r:G 度”n
理が容易(、−1°j J−7,,5,3ラ+1、&1
Itl理動作に含む姓てコロイド状分解防止剤のない過
酸化水素を必要なだけ基板へ・供給でよると共に、原料
過酸化水素水は分解防止剤が含有されたまま貯蔵でき−
るので、貯蔵時の過酸化水素の分解は最少限に抑え1)
れる。[Invention of action-1, iζ, 1): Since hydrogen peroxide is used in hydraulics, the substrate can be processed as it is, with particles 1 and 5 and 1 and 5 and 1 and 1, respectively. 1, -4, 11-1 degree of peroxide scale; sentence valve speed i-'! 'c IJ "γ gaso, nIT?"
Unique in 1 shot) 1 decision ``:X-r:G degree''n
Easy to understand (,-1°j J-7,,5,3la+1,&1
In addition to supplying the required amount of hydrogen peroxide without a colloidal decomposition inhibitor to the substrate, the raw material hydrogen peroxide solution can be stored while containing the decomposition inhibitor.
decomposition of hydrogen peroxide during storage is minimized1)
It will be done.
[実施例1
以下、−の発明の一実施例にJ、る電子部材または電子
デバイスの製造方法を用いた装置を図についマ゛説明才
イ)。第1図におい”で、 (1)はfム発装置、(2
>i:t、M別動酸化水素水貯槽、(3)ζJ、基板処
理チャ゛バー、(,4)は被9)3理基板、(5)は例
えば内部(,1粒状二酸化−・・ンff >を充i1j
l−f=排ガス処理装置であイ)0、
次(て動作;一つい′r説明−J−ろ。[Embodiment 1 Hereinafter, an apparatus using the method for manufacturing an electronic member or an electronic device according to an embodiment of the invention described in -J will be explained with reference to the drawings.] In Figure 1, (1) is the fm generator, (2
>i: t, M separate dynamic hydrogen oxide water storage tank, (3) ζJ, substrate processing chamber, (, 4) is the substrate to be treated (9), (5) is, for example, inside (, 1 granular dioxide... Fill in ff > i1j
l-f=exhaust gas treatment equipment) 0, Next (te operation; one'r explanation-J-ro).
原料のjL)酸化水素水は原料過酸化水素水貯槽(2)
カi’、、 蒸発’A lt < 1 ) !、=供給
L’し!’ jE、 ’?’l l、蒸RA ’Jj
It (1) u e−′λ”−・(,7jニー:″で
、例、えば25〜120℃に加熱41にれ、内部の過酸
イ1′、水素を蒸発さ(十ろ。蒸発装置<1)t;mは
同時+、== S1′1部からキャリアガス、例えば窒
素ガスか、1勾λば5 Q /’fAlrσ帽jで供給
六れ、蒸発しt−過酸化水素を同伴して過酸化水素含有
ガス(H20□0.1〜0.5%、■20(水)0.1
〜0.5%)として基板処理チャンバー(3)へ送られ
、被処理基板〈4〉を処理する。側光ば被処理基板(4
)の表面の有機物除去が目的の場合は、過酸化水素が有
機物を酸化分解して有機物を炭酸ガスと水に変え、これ
ら発生した不用成分ガスはキャリアガスの流れに従って
基板処理チャンバー〈3〉の外に排出する。また、被処
理基板(4)の酸化を目的とする時は、過酸化水素が酸
素を被処理基板(4)に供給し、水を発生するが、これ
も先例と同様にキャリアガス流に従って排出される。排
出されたガス中には未反応の過酸化水素が含有されてい
るので、排ガス処理装置(5)にて内部の触媒である二
酸化マンガンに接触させ、残留過酸化水素を水と酸素に
分解し、系外に排出される。以上のような処理によって
、従来の湿式処理と同等以上の洗浄効果が得られた。Raw material jL) Hydrogen oxide water is stored in the raw material hydrogen peroxide water storage tank (2)
Kai',, Evaporation'Alt < 1)! ,=supply L'! ' jE, '? 'l l, steam RA 'Jj
It (1) u e−′λ”−・(,7j knee:″), for example, heat to 25 to 120°C to evaporate the peroxide 1′ and hydrogen inside. Apparatus <1) t; m is simultaneous +, == S1' Carrier gas, such as nitrogen gas, is supplied from 1 part at 5 Q /'fAlrσ cap j, and evaporates to produce t-hydrogen peroxide. Accompanied by hydrogen peroxide-containing gas (H20□0.1-0.5%, ■20 (water) 0.1
~0.5%) and sent to the substrate processing chamber (3) to process the substrate to be processed <4>. Side light substrate to be processed (4
), hydrogen peroxide oxidizes and decomposes the organic matter, converting it into carbon dioxide and water, and these generated unnecessary component gases are sent to the substrate processing chamber <3> according to the flow of the carrier gas. Discharge outside. In addition, when the purpose is to oxidize the substrate to be processed (4), hydrogen peroxide supplies oxygen to the substrate to be processed (4) and generates water, which is also discharged along the carrier gas flow as in the previous example. be done. Since the discharged gas contains unreacted hydrogen peroxide, it is brought into contact with manganese dioxide, which is an internal catalyst, in the exhaust gas treatment device (5) to decompose the residual hydrogen peroxide into water and oxygen. , is discharged from the system. Through the above-described treatment, a cleaning effect equal to or greater than that of conventional wet treatment was obtained.
なお、基板処理チャンバー(3〉はこのプロセス専用の
チャンバーである必要はなく、むしろ前プロセスの処理
チャンバー、例えばエツチング用チャンバーにガス供給
口と排出口を設けた汎用チャンバーを用い、同一のチャ
ンバーで基板を取り出すことなく、複数の工程を行う方
が基板の汚染の防止に有効である。気体状の過酸化水素
の製造によって、まさにこの同一チャンバーによる複数
工程の実施が可能になる。Note that the substrate processing chamber (3) does not need to be a chamber dedicated to this process, but rather a general-purpose chamber that has a gas supply port and a gas discharge port in the processing chamber of the previous process, such as an etching chamber, and can be used in the same chamber. Performing multiple steps without removing the substrate is more effective in preventing contamination of the substrate.The production of gaseous hydrogen peroxide allows this very same chamber to perform multiple steps.
さらに、この発明における過酸化水素は、蒸発過程を経
ているので、粒子状不純物が一切含まれずそのまま基板
処理が行える。また、過酸化水素の濃度は蒸発速度とキ
ャリアガス流量で一義的に決められるので濃度管理が容
易に行える。さらに、基板処理動作に合わせてコロイド
状分解防止剤のない過酸化水素を必要なだけ基板へ供給
できると共に、原料過酸化水素水は分解防止剤が含有さ
れたまま貯蔵できるので、貯蔵時の過酸化水素の分解は
最少限に抑光られる。また、−度に大量の廃液が発生し
ないので、廃液処理装置の処理能力を特に大きくする必
要がない。Furthermore, since the hydrogen peroxide in this invention has undergone an evaporation process, it does not contain any particulate impurities and can be used to process substrates as is. Further, since the concentration of hydrogen peroxide is uniquely determined by the evaporation rate and the flow rate of the carrier gas, the concentration can be easily controlled. Furthermore, hydrogen peroxide without a colloidal decomposition inhibitor can be supplied to the substrate as much as necessary in accordance with the substrate processing operation, and the raw hydrogen peroxide solution can be stored with the decomposition inhibitor still in it, so there is no need to worry about overheating during storage. Decomposition of hydrogen oxide is suppressed to a minimum. Furthermore, since a large amount of waste liquid is not generated at a time, there is no need to particularly increase the processing capacity of the waste liquid treatment device.
また、密度の小さいガス状の過酸化水素を基板処理に用
いるので、基板表層の微細構造の細部にわたって過酸化
水素が供給され精度が高(均一な処理が期待できる。Furthermore, since gaseous hydrogen peroxide with low density is used for substrate processing, hydrogen peroxide is supplied to the fine details of the surface layer of the substrate, resulting in high precision (uniform processing).
第2図は過酸化水素の酸化能力をさらに改善し。Figure 2 further improves the oxidation ability of hydrogen peroxide.
迅速に、かつ完べきに基板処理を行える他の実施例によ
る電子部材または電子デバイスの製造方法を実現した装
置の構成である。図中、(1)〜(5)は第1図と同等
もしくは相当のものである。 (6)は基板処理チャン
バー(3)内に設けられた波長190nm〜250nm
の紫外線を発生する紫外ランプである。This is a configuration of an apparatus that realizes a method for manufacturing an electronic member or an electronic device according to another embodiment, which can quickly and completely process a substrate. In the figure, (1) to (5) are equivalent to or equivalent to those in FIG. (6) is a wavelength 190 nm to 250 nm installed in the substrate processing chamber (3).
This is an ultraviolet lamp that generates ultraviolet light.
基板処理チャンバー(3)では、蒸発装置(1)から過
酸化水素含有ガスが供給されると共に、紫外線ランプ(
6)からの紫外線が被処理基板(4)に照射されている
。紫外線の役割は被処理基板(4)の表面近傍の過酸化
水素を分解してヒドロキシルラジカルを生成させること
にある。このヒドロキシルラジカルは極めて反応性が高
(、効率よく有機物や基板を酸化する。このように、紫
外線照射を併用することによって、迅速かつ完全な処理
効果が実現できる。In the substrate processing chamber (3), hydrogen peroxide-containing gas is supplied from the evaporator (1), and an ultraviolet lamp (
The substrate to be processed (4) is irradiated with ultraviolet light from 6). The role of the ultraviolet rays is to decompose hydrogen peroxide near the surface of the substrate to be processed (4) to generate hydroxyl radicals. These hydroxyl radicals are extremely reactive and efficiently oxidize organic substances and substrates. Thus, by combining UV irradiation, a rapid and complete treatment effect can be achieved.
ここにおいて、紫外線ランプ(6)は基板処理チャンバ
ー(3)内に設ける必要はなく、基板処理チャンバー(
3〉の一部もしくは全部を紫外線透過性の材料で構成し
、紫外線ランプ(6)を基板処理チャンバー(3)の外
部に設置しても同等の効果が期待できる。Here, the ultraviolet lamp (6) does not need to be provided in the substrate processing chamber (3), and the
The same effect can be expected even if part or all of 3) is made of a UV-transparent material and the UV lamp (6) is installed outside the substrate processing chamber (3).
[発明の効果]
以上のように、この発明によれば過酸化水素水をキャリ
アガス中に蒸発させ、過酸化水素含有気体を生成し、こ
の過酸化水素含有気体を被処理基板が設置された容器中
に供給して、上記基板表面を上記過酸化水素含有気体に
より酸化処理するようにしたので、原料過酸化水素に含
まれていた粒子状不純物がなく、直接基板処理が行え、
また、前プロ七スと同一のチャンバー内で処理が可能で
あり、搬送に伴う基板の汚染が防止できる。また、基板
処理によって生成する不純な生成物は排気ガスに同伴し
て常に系外へ排出されるので基板の反応生成物による汚
染が防止できる。また、必要量の過酸化水素が自由に供
給できるので、濃度管理が容易であるという効果がある
。[Effects of the Invention] As described above, according to the present invention, a hydrogen peroxide solution is evaporated into a carrier gas to generate a hydrogen peroxide-containing gas, and this hydrogen peroxide-containing gas is transferred to a substrate on which a substrate to be processed is placed. Since the hydrogen peroxide-containing gas is supplied into a container and the surface of the substrate is oxidized by the hydrogen peroxide-containing gas, there are no particulate impurities contained in the hydrogen peroxide raw material, and the substrate can be directly processed.
Furthermore, processing can be performed in the same chamber as the previous process, and contamination of the substrate during transportation can be prevented. Furthermore, since impure products generated by substrate processing are always discharged out of the system along with the exhaust gas, contamination of the substrate by reaction products can be prevented. Furthermore, since the required amount of hydrogen peroxide can be freely supplied, concentration control is easy.
第1図はこの発明の一実施例による電子部材または電子
デバイスの製造方法を実現する装置を示す構成図、第2
図はこの発明の他の実施例による電子部材またNよ電子
デバイスの製造方法を実現する装置を示す構成図、およ
び第3図は従来の湿式法による基板洗浄装置を示す構成
図である。
図において、(1)は蒸発装置、(2)は原料過酸化水
素水の貯槽、(3〉は基板処理チャンバー (4〉は被
処理基板、(5〉は排ガス処理装置である。
なお、図中、同一符号は同一もしくは相当部分を示す。FIG. 1 is a configuration diagram showing an apparatus for realizing a method for manufacturing an electronic member or an electronic device according to an embodiment of the present invention, and FIG.
FIG. 3 is a block diagram showing an apparatus for realizing a method for manufacturing an electronic member or electronic device according to another embodiment of the present invention, and FIG. 3 is a block diagram showing a conventional wet method substrate cleaning apparatus. In the figure, (1) is an evaporation device, (2) is a storage tank for raw material hydrogen peroxide, (3> is a substrate processing chamber, (4> is a substrate to be processed, and (5> is an exhaust gas treatment device). The same reference numerals indicate the same or equivalent parts.
Claims (1)
含有気体を生成する工程、および上記過酸化水素含有気
体を被処理基板が設置された容器中に供給し、上記基板
表面を上記過酸化水素含有気体により酸化処理する工程
を施す電子部材または電子デバイスの製造方法。A step of evaporating a hydrogen peroxide solution into a carrier gas to generate a hydrogen peroxide-containing gas, and supplying the hydrogen peroxide-containing gas into a container in which a substrate to be processed is installed, and applying the peroxide to the surface of the substrate. A method for manufacturing an electronic member or an electronic device, which performs an oxidation treatment using a hydrogen-containing gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31693388A JPH02161726A (en) | 1988-12-14 | 1988-12-14 | Manufacture of electronic member or electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31693388A JPH02161726A (en) | 1988-12-14 | 1988-12-14 | Manufacture of electronic member or electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02161726A true JPH02161726A (en) | 1990-06-21 |
Family
ID=18082548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31693388A Pending JPH02161726A (en) | 1988-12-14 | 1988-12-14 | Manufacture of electronic member or electronic device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02161726A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150279693A1 (en) * | 2014-03-28 | 2015-10-01 | Asm Ip Holding B.V. | Method and system for delivering hydrogen peroxide to a semiconductor processing chamber |
-
1988
- 1988-12-14 JP JP31693388A patent/JPH02161726A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150279693A1 (en) * | 2014-03-28 | 2015-10-01 | Asm Ip Holding B.V. | Method and system for delivering hydrogen peroxide to a semiconductor processing chamber |
KR20150112876A (en) * | 2014-03-28 | 2015-10-07 | 에이에스엠 아이피 홀딩 비.브이. | Method and system for delivering hydrogen peroxide to a semiconductor processing chamber |
JP2015192148A (en) * | 2014-03-28 | 2015-11-02 | エーエスエム アイピー ホールディング ビー.ブイ. | Method and system for sending hydrogen peroxide to semiconductor processing chamber |
US10343907B2 (en) | 2014-03-28 | 2019-07-09 | Asm Ip Holding B.V. | Method and system for delivering hydrogen peroxide to a semiconductor processing chamber |
TWI682043B (en) * | 2014-03-28 | 2020-01-11 | 荷蘭商Asm Ip控股公司 | System for delivering hydrogen peroxide to a semiconductor processing chamber and method for semiconductor processing |
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