JPH02153542A - Manufacture of integrated circuit device - Google Patents

Manufacture of integrated circuit device

Info

Publication number
JPH02153542A
JPH02153542A JP63307373A JP30737388A JPH02153542A JP H02153542 A JPH02153542 A JP H02153542A JP 63307373 A JP63307373 A JP 63307373A JP 30737388 A JP30737388 A JP 30737388A JP H02153542 A JPH02153542 A JP H02153542A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
sealing resin
plate
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63307373A
Other languages
Japanese (ja)
Inventor
Tatsuo Kikuchi
菊池 立郎
Hiroshi Kuroda
黒田 啓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63307373A priority Critical patent/JPH02153542A/en
Publication of JPH02153542A publication Critical patent/JPH02153542A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To manufacture a high-dimensional accuracy and high-quality thin integrated circuit device suitable for an IC card at a high efficiency and at low cost by a method wherein an integrated circuit element mounted on a metallic thin plate is covered with a sealing resin and part of the metallic thin plate is used as a terminal for external connection use. CONSTITUTION:An insulative bonding agent 12 is applied on most of one surface 11a of a metallic thin plate 11 excepting the connecting parts of the one surface 11a with gold wires 14. An integrated circuit element 13 is mounted and fixed through this bonding agent 12. Then, input/output electrodes 13a of the element 13 and the one surface 11a of the plate 11 are electrically connected to each other by the wires 14. After that, the element 13, the wires 14 and the side of the one surface 11a of the plate 11 are coated with a sealing resin 15. Subsequently, unnecessary parts of the plate 11 are removed to form the plate 11 into a desired configuration and after a terminal 11c for external connection use is formed, a coupling part 11d is cut and removed to obtain an integrated circuit device in a completed state.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は例えばICカード等に用いられる集積回路装置
の製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing an integrated circuit device used, for example, in an IC card.

従来の技術 近年は、マイクロコンピュータ、メモリ等の集積回路素
子をプラスチック製カードに搭載または内蔵したいわゆ
るICカードが実用に供されつつある。
2. Description of the Related Art In recent years, so-called IC cards, in which integrated circuit elements such as microcomputers and memories are mounted or built into plastic cards, have been put into practical use.

このICカードは、すでに多食に使用されている磁気ス
トライプカードに比して、記憶容量が大きく防犯性に優
れていることから、従来の磁気ストライプカードの用途
ばかりでなく身分証明書等多様な用途に使用することが
考えられている。
This IC card has a larger storage capacity and better security than the magnetic stripe card that is already used for many meals, so it can be used not only for conventional magnetic stripe cards but also for various purposes such as identification cards. It is considered to be used for this purpose.

ところで、ICカードは、塩化ビニル樹脂等のプラスチ
ックカードK、リーダー・ライター等の外部装置との接
続用端子を有する集積回路装置を搭載した構成であり、
この集積回路装置は、極めて薄型に構成することが必要
とされている。
By the way, an IC card is a plastic card K made of vinyl chloride resin, etc., and is equipped with an integrated circuit device having a terminal for connection with an external device such as a reader/writer.
This integrated circuit device is required to be extremely thin.

ICカードにも多くの種類があるが、従来の磁気ストラ
イブカードと同じ寸法のICカードの規格化が130(
国際標準化機構)で検討されている。
There are many types of IC cards, but the standardization of IC cards with the same dimensions as conventional magnetic stripe cards was in 130 (
International Organization for Standardization).

以下、ICカードおよびICカードに用いられる集積回
路装置について添付図面を参照しながら説明する。
Hereinafter, an IC card and an integrated circuit device used in the IC card will be described with reference to the accompanying drawings.

第4図は10カードの斜視図、第6図は第4図における
ムー五′断面であり、集積回路装置の周辺を示す断面図
、第6図は回路基板を用いた従来の集積回路装置の縦断
面図である。
Fig. 4 is a perspective view of the 10 card, Fig. 6 is a cross-section of the 5' section of Fig. 4 showing the periphery of the integrated circuit device, and Fig. 6 is a cross-sectional view of the conventional integrated circuit device using a circuit board. FIG.

従来、ICカードの製造方法や構成には数多くの方法が
行われているが1例えば、第4図および第5図に示すよ
うに、シート状の厚さ760μm程度の薄いプラスチッ
クカード1に、エンドミルやトムソン金型などを用いて
、集積回路装置300大きさよりやや大きな穴2を設け
、プラスチックカード1よりやや薄い厚みの集積回路装
置30を挿入し、外部接続用端子32が露出するように
接着する。
Conventionally, there have been many methods for manufacturing and configuring IC cards.1 For example, as shown in FIGS. A hole 2 slightly larger than the size of the integrated circuit device 300 is made using a mold or a Thomson mold, and the integrated circuit device 30, which is slightly thinner than the plastic card 1, is inserted and glued so that the external connection terminals 32 are exposed. .

従来の集積回路装置は、第6図に示すように、フィルム
状の絶縁基板31に外部接続用端子ノ;ターン32.回
路パターン33およびスルーホール34等の回路導体を
形成した薄型回路基板に、集積回路素子35をダイボン
ディングし、集積回路素子36の入出力電極と回路−ζ
ターン33とをワイヤーボンディング方式等により金属
線36で接続する。また、樹脂封止時の樹脂流れ止め用
の封止枠37を回路基板に接着して設け、エポキシ樹脂
等の封止材38により封止して得られる。(特開昭55
−56647号公報、特開昭68−92597号公報) また、M述のような高精度な精密回路基板を必要としな
い従来の集積回路装置として、金属薄板を所望形状に加
工したリードフレームを用い、リードフレームの片方の
一面を外部接続用端子とし、他面に集積回路素子を搭載
し、集積回路素子の入出力電極とリードフレームの他面
とを金属線で電気的に接続し、集積回路素子側を封止樹
脂で被覆した集積回路装置がある。(特開昭54−69
068号公報、特開昭63−33853号公報)発明が
解決しようとする課題 ICカードに搭載される集積回路装置においては、高信
頼性、薄型化と同時に、高寸法精度さらには低コストで
あることが求められている。しかしながら、前述したよ
うな回路基板を用いた集積回路装置においては、用いら
れる回路基板が、絶縁基板31の両面に配線導体を形成
しスルーホール34によって接続したスルーホール付両
面基板であるので1次のような問題を有している。■回
路基板が高価である。■絶縁基板の厚さのバラツキやス
ルーホール形成時のめっき厚のバラツキが回路基板総厚
のバラツキとなり、良好な厚さ寸法精度が得られにくい
。■集積回路素子35の樹脂封止時に、樹脂がスルーホ
ール34より流出するので、流出防止のためスルーホー
ル34を封口する手段が必要である。
As shown in FIG. 6, a conventional integrated circuit device has a film-like insulating substrate 31 with terminals for external connection; turns 32; The integrated circuit element 35 is die-bonded to a thin circuit board on which a circuit pattern 33 and circuit conductors such as through holes 34 are formed, and the input/output electrodes of the integrated circuit element 36 and the circuit-ζ
The turn 33 is connected with a metal wire 36 by a wire bonding method or the like. Further, a sealing frame 37 for preventing resin flow during resin sealing is provided by adhering to the circuit board, and the circuit board is sealed with a sealing material 38 such as epoxy resin. (Unexamined Japanese Patent Publication No. 55
(No. 56647, Japanese Patent Application Laid-open No. 68-92597) In addition, as a conventional integrated circuit device that does not require a high precision circuit board as described in M, a lead frame made of a thin metal plate processed into a desired shape is used. , one side of the lead frame is used as an external connection terminal, the other side is equipped with an integrated circuit element, and the input/output electrodes of the integrated circuit element and the other side of the lead frame are electrically connected with metal wires to form an integrated circuit. There is an integrated circuit device whose element side is covered with a sealing resin. (Unexamined Japanese Patent Publication No. 54-69
(No. 068, Japanese Unexamined Patent Publication No. 63-33853) Problems to be Solved by the Invention In the integrated circuit device mounted on an IC card, it is necessary to achieve high reliability, thinness, high dimensional accuracy, and low cost. That is what is required. However, in the integrated circuit device using the circuit board as described above, the circuit board used is a double-sided board with through holes in which wiring conductors are formed on both sides of the insulating board 31 and connected by the through holes 34. It has the following problems. ■Circuit boards are expensive. ■Differences in the thickness of the insulating board and variations in the plating thickness when forming through holes cause variations in the total thickness of the circuit board, making it difficult to obtain good thickness dimensional accuracy. (2) When the integrated circuit element 35 is sealed with resin, the resin flows out from the through hole 34, so a means for sealing the through hole 34 is required to prevent the resin from flowing out.

一方、金属薄板を所望形状に加工したリードフレームを
用いた集積回路装置は、前述のような高精度な精密回路
基板を必要としないので、高寸法精度かつ高能率に製造
でき、しかも安価な集積回路装置であるという長所があ
る。
On the other hand, integrated circuit devices using lead frames made of thin metal plates processed into desired shapes do not require the high-precision precision circuit boards mentioned above, so they can be manufactured with high dimensional accuracy and high efficiency, and they can be integrated at low cost. It has the advantage of being a circuit device.

しかしながら、このリードフレームを用いた集積回路装
置は、リードフレームの片方の一面を外部接続用端子と
して、封止樹脂より露出させた片面封止構造であるので
、トランスファ成形法等により封止樹脂を形成した場合
、封止樹脂が外部接続用端子面にまでにじみだして薄パ
リとして形成されやすく、この場合には、物理的研摩や
溶剤等によってこの薄パリを除去することが必要であり
、製造工程が複雑となるばかりでなく集積回路装置とし
ての品質を損なう危険性がある。また、この集積回路装
置のリードフレームは、集積回路装置の製造時の搬送1
組立等の生産性の制約から、リードフレームをあまり薄
くすることは困難であり、0.12fl程度が限度とさ
れている。このため、薄型の集積回路装置として次のよ
うな問題点を有している。■リードフレームの厚み分だ
け実質的に封止樹脂が薄くなり、集積回路装置の強度が
低下し、実用上十分な信頼性が得にくい。■集積回路装
置として、製品のソリを最少にするためには、リードフ
レームの厚さをさらに薄くすることが好ましいが、難し
い。
However, integrated circuit devices using this lead frame have a single-sided sealed structure in which one side of the lead frame serves as an external connection terminal and is exposed from the sealing resin. When formed, the sealing resin tends to ooze out onto the external connection terminal surface and form a thin layer of flakes. In this case, it is necessary to remove this thin layer by physical polishing, solvent, etc. Not only does this complicate the process, but there is a risk that the quality of the integrated circuit device may be impaired. In addition, the lead frame of this integrated circuit device is transported during the manufacturing of the integrated circuit device.
Due to productivity constraints such as assembly, it is difficult to make the lead frame too thin, and the limit is about 0.12 fl. Therefore, the thin integrated circuit device has the following problems. ■The sealing resin becomes substantially thinner by the thickness of the lead frame, reducing the strength of the integrated circuit device and making it difficult to obtain sufficient reliability for practical use. ■In order to minimize warping of the product as an integrated circuit device, it is desirable to further reduce the thickness of the lead frame, but this is difficult.

本発明は、上記問題点に濫みて成されたもので、rcカ
ードに適した高寸法精度、高品質な薄型の集積回路装置
を、高能率かつ安価に製造できる方法を提供するもので
ある。
The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a method for manufacturing a thin integrated circuit device with high dimensional accuracy and high quality suitable for RC cards with high efficiency and at low cost.

課題を解決するための手段 上記課題を解決するために、本発明の集積回路装置の製
造方法は、金属薄板の一面に絶縁性接着材を介して集積
回路素子を搭載し、前記集積回路素子の入出力電極と前
記金属薄板の一面とを電気的に接続し、前記金属薄板の
一面側に封止樹脂を形成して前記集積回路素子および前
記電気的接続部分を前記封止樹脂で覆い、そののちに、
前記金属薄板の一部を除去し、前記金属薄板を所望の形
状の外部接続用端子とするものである。
Means for Solving the Problems In order to solve the above problems, the method for manufacturing an integrated circuit device of the present invention includes mounting an integrated circuit element on one surface of a thin metal plate via an insulating adhesive, and The input/output electrodes are electrically connected to one surface of the thin metal plate, a sealing resin is formed on one side of the thin metal plate, and the integrated circuit element and the electrical connection portion are covered with the sealing resin. Later,
A part of the metal thin plate is removed to make the metal thin plate into a desired shape of an external connection terminal.

作用 本発明は、上記の構成によって、従来用いられていた高
価なスルーホール付両面回路基板を必要とせず、スルー
ホール形成に伴うコスト、品質他の問題が解決でき、薄
型の集積回路装置が安価で高品質に製造できる。
Effects of the present invention With the above configuration, the present invention eliminates the need for the conventionally used expensive double-sided circuit board with through holes, solves the cost, quality, and other problems associated with through hole formation, and makes thin integrated circuit devices inexpensive. can be manufactured with high quality.

同時に、金属薄板を外部接続用端子とするため、前記金
属薄板の一部を除去し所望の形状とする加工は、封止樹
脂を形成し、集積回路素子および電気的接続部分を前記
封止樹脂で覆ったのちに行うものであり、集積回路素子
の搭載接続から外部接続用端子のパターン形成までの工
程では、金属薄板は凹凸のない平板であるので、以下の
作用を有することとなる。■金属薄板が平板であるので
、外部接続用端子面への封止樹脂の流出がなく、また、
封止樹脂側においては、金型と金属薄板が良好に密着し
、樹脂パリ等の発生がなく良好な封止樹脂の形成が可能
である。■外部接続用端子面の表面処理は、各工程を経
た後に行うので、鋼等を防止でき、外観的な品質が確保
できる。■工程搬送時の安定性が高い。■金属薄板の形
状加工は樹脂封止後に行うので、金属薄板は極めて薄く
でき・その分集積回路素子および封止樹脂の厚みを厚く
でき、集積回路装置の強度を向上させることができる。
At the same time, in order to use the thin metal plate as an external connection terminal, the process of removing a part of the thin metal plate and shaping it into a desired shape forms a sealing resin, and seals the integrated circuit element and the electrical connection portion with the sealing resin. In the process from mounting and connecting the integrated circuit elements to patterning the external connection terminals, the thin metal plate is a flat plate with no irregularities, so it has the following effects. ■Since the metal thin plate is a flat plate, there is no leakage of sealing resin to the external connection terminal surface, and
On the side of the sealing resin, the mold and the thin metal plate are in good contact with each other, and it is possible to form a good sealing resin without occurrence of resin flakes or the like. ■Surface treatment of the external connection terminal surface is performed after each process, so it can prevent steel etc. and ensure the quality of the appearance. ■High stability during process transportation. ■Since the shape processing of the metal thin plate is performed after resin sealing, the metal thin plate can be made extremely thin, and the thickness of the integrated circuit element and the sealing resin can be increased accordingly, thereby improving the strength of the integrated circuit device.

■金属薄板が極めて薄くできるので、細密な外部接続用
端子パターンの形成ができる。
■Since the thin metal plate can be made extremely thin, detailed terminal patterns for external connections can be formed.

実施例 以下、本発明の一実施例の集積回路装置の製造方法につ
いて、図面を参照しながら説明する。
EXAMPLE Hereinafter, a method of manufacturing an integrated circuit device according to an example of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例における集積回路装置の製造
方法を説明するだめの各工程における縦断面図である。
FIG. 1 is a longitudinal cross-sectional view showing each step of a method for manufacturing an integrated circuit device according to an embodiment of the present invention.

第2図は本発明の一実施例における製造方法により得だ
集積回路装置の縦断面図である。第3図は本発明の一実
施例における封止樹脂の形成方法を説明するだめの縦断
面図である。
FIG. 2 is a longitudinal sectional view of an integrated circuit device produced by a manufacturing method according to an embodiment of the present invention. FIG. 3 is a longitudinal sectional view illustrating a method of forming a sealing resin in an embodiment of the present invention.

第1図、第2図および第3図において、11は金属薄板
、12は絶縁性接着材、13は集積回路素子、14は金
属線、16は封止樹脂、16は成形金型である。
1, 2, and 3, 11 is a metal thin plate, 12 is an insulating adhesive, 13 is an integrated circuit element, 14 is a metal wire, 16 is a sealing resin, and 16 is a mold.

本実施例の集積回路装置の製造方法について、その構成
とともに以下に詳細に説明する。
The method for manufacturing the integrated circuit device of this embodiment will be described in detail below along with its configuration.

まず、金属薄板11として35μm厚の銅箔を用いた。First, a 35 μm thick copper foil was used as the metal thin plate 11.

この金属薄板11の一部11aの所望部分に、後述する
ワイヤーポンディング法により金属線14を接続するた
めに、ニッケルめっきおよび金めつきによる表面処理を
施し、第1図(a)を得た。
In order to connect the metal wire 14 to a desired portion of the part 11a of the thin metal plate 11 by the wire bonding method described later, surface treatment was performed by nickel plating and gold plating to obtain the structure shown in FIG. 1(a). .

次に、上記の金属薄板11の一部112Lの金属線14
の接続部分を除いた大部分に、絶縁性樹脂からなる絶縁
性接着材12をスクリーン印刷法により塗布した。次に
、集積回路素子13を搭載し、絶縁性接着材12を加熱
硬化して接着固定した。
Next, the metal wire 14 of the part 112L of the metal thin plate 11 described above is
An insulating adhesive 12 made of an insulating resin was applied by screen printing to most of the parts except for the connecting parts. Next, the integrated circuit element 13 was mounted, and the insulating adhesive material 12 was cured by heating to be adhesively fixed.

なお、絶縁性接着材12を、金属線14の接続部分を除
いた金属薄板11の一面111Lの大部分に設けたのは
、後に形成する封止樹脂16と金属薄板11の密着性を
高めるためであり、また、後述する化学的エツチング時
に、金属薄板11が一部11a側からエツチングされる
のを防ぐためである。
Note that the reason why the insulating adhesive 12 was provided on most of the surface 111L of the thin metal plate 11 excluding the connection portion of the metal wire 14 was to improve the adhesion between the sealing resin 16 and the thin metal plate 11 to be formed later. This is also to prevent part of the thin metal plate 11 from being etched from the 11a side during chemical etching to be described later.

次に、金属線14として直径26μmの金細線を用いて
、ワイヤボンディング法により、集積回路素子130入
出力電極132Lと金@薄板11の一部111Lのニッ
ケルめっきおよび金めつきによる表面処理部分とを電気
的に接続し、第1図(b)とした。
Next, using a fine gold wire with a diameter of 26 μm as the metal wire 14, the integrated circuit element 130 input/output electrode 132L and the surface treated part 111L of the gold@thin plate 11 by nickel plating and gold plating are bonded by wire bonding. were electrically connected as shown in FIG. 1(b).

集積回路素子13の入出力電極131Lと金属薄板11
の一面11aとの必要な電気的接続を行ったのち、エポ
キシ樹脂などの封止成形材料を用いトランスファ成形法
で成形し、封止樹脂15により集積回路素子13、金属
線14および金属薄板11の一面111L側を被覆して
保護し、第1図(Cj)を得た。
Input/output electrode 131L of integrated circuit element 13 and thin metal plate 11
After making the necessary electrical connections with the one surface 11a, molding is performed using a sealing molding material such as epoxy resin by a transfer molding method, and the integrated circuit element 13, metal wire 14 and thin metal plate 11 are sealed with the sealing resin 15. One surface 111L side was coated and protected, and FIG. 1 (Cj) was obtained.

上記の封止樹脂16の形成方法について、第3図を用い
てさらに詳しく説明する。集積回路素子13を搭載し接
着固定し、金属線14による必要な電気的接続を行った
金属薄板11を、成形温度に加熱されたトランスファ成
形の成形金型16の下金型16aに当接させ、下金型1
6八と上金型16bの型締めを行ったのち、エポキシ樹
脂を主成分とし硬化剤、充填剤およびその他の添加剤か
らなる封止成形材料を加熱加圧状態で成形金型16内に
ゲー)180より注入し、硬化のだめの一定時間保持し
たのち、トランスファ成形金型16より取り出して、封
止樹脂16を形成した。なお、第3図において16dは
封止成形材料注入時の成形金型16内の空気を排出する
だめのエアーベントである。
The method for forming the sealing resin 16 described above will be explained in more detail using FIG. 3. The thin metal plate 11 on which the integrated circuit element 13 is mounted and fixed by adhesive, and the necessary electrical connections are made with the metal wire 14, is brought into contact with the lower mold 16a of the transfer molding mold 16 heated to the molding temperature. , lower mold 1
68 and the upper mold 16b, a sealing molding material consisting of an epoxy resin as a main component, a hardening agent, a filler, and other additives is injected into the molding mold 16 under heat and pressure. ) 180 and held for a certain period of time to harden, then taken out from the transfer molding die 16 to form a sealing resin 16. In FIG. 3, reference numeral 16d designates an air vent for discharging the air inside the molding die 16 when the sealing material is injected.

以上説明した本実施例では、金属薄板11は、平板であ
り、スルーホール等の開口がないので、樹脂封止時に、
金属薄板11の他面11b側への樹脂の流出を防止のだ
めの手段は不要であり、金属薄板11の樹脂形成側であ
る一面111Lには凹凸がなく、また、他面11bも平
面であり、パターン等が形成されて無いので、型締め時
、十分な圧力で型締めを行うことができ、成形金型16
は金属薄板11に良好に密着し、封止樹脂15の流出が
なく、薄パリの発生が防止でき、良好に封止樹脂16が
形成できた。
In the present embodiment described above, the metal thin plate 11 is a flat plate and does not have any openings such as through holes.
There is no need for any means to prevent the resin from flowing out to the other surface 11b of the thin metal plate 11, and one surface 111L of the thin metal plate 11 on which the resin is formed has no irregularities, and the other surface 11b is also flat. Since there is no pattern formed, the mold can be clamped with sufficient pressure during mold clamping, and the molding die 16
The resin adhered well to the thin metal plate 11, the sealing resin 15 did not leak out, the generation of thin flakes was prevented, and the sealing resin 16 could be formed satisfactorily.

なお、封止樹脂15の形成方法について、エポキシ樹脂
を主成分とする封止成形材料を用いたトランスファ成形
法を説明したが、この他に、封止成形材料としてフェノ
ール系樹脂を用いてもよく、また、熱可塑性樹脂を用い
た射出成形法により行うこともできる。
As for the method of forming the sealing resin 15, a transfer molding method using a sealing molding material mainly composed of epoxy resin has been described, but in addition to this, a phenolic resin may be used as the sealing molding material. Alternatively, injection molding using a thermoplastic resin may be used.

次に、金属薄板11の他面11bの表面にエツチングレ
ジスト膜形成、化学的エツチングによる金属の不要部分
の除去、エツチングレジスト膜除去を行って、金属薄板
11を所望形状とした。この後、所望形状の金属薄板1
10表面にニッケルめっきおよび金めつきによる表面処
理を施して、外部接続用端子11cを形成し、第1図(
d)を作成した。なお、第1図(d)の破線部分11d
は、外部接続用端子110の連結部であり、複数個の集
積回路装置を部分的に連結するとともに、上記のめっき
による表面処理を施すためのリードとしての導体も兼ね
るものである。
Next, an etching resist film was formed on the other surface 11b of the thin metal plate 11, unnecessary portions of the metal were removed by chemical etching, and the etching resist film was removed to give the thin metal plate 11 a desired shape. After this, the thin metal plate 1 of the desired shape is
10 surface is subjected to surface treatment by nickel plating and gold plating to form external connection terminals 11c, as shown in FIG.
d) was created. Note that the broken line portion 11d in FIG. 1(d)
is a connection portion of the external connection terminal 110, which partially connects a plurality of integrated circuit devices and also serves as a conductor as a lead for performing the above-mentioned surface treatment by plating.

この後、金属薄板11の連結部11dを切断除去し、各
集積回路装置を分離した。これにより第2図の本実施例
の製造方法による完成状態の集積回路装置が得られた。
Thereafter, the connecting portion 11d of the thin metal plate 11 was cut and removed, and each integrated circuit device was separated. As a result, a completed integrated circuit device according to the manufacturing method of this embodiment shown in FIG. 2 was obtained.

このように、金属薄板11に、絶縁性接着材12を介し
て集積回路素子13の搭載接続および封止樹脂16の形
成を行った後に、パターン形成および金属薄板11の表
面にニッケルめっきおよび金めつきによる表面処理を施
して外部接続用端子11Cを形成したので、外部接続用
端子110の表面に傷や汚れの発生が防止でき、外観的
品質が確保できた。
In this way, after the integrated circuit element 13 is mounted and connected to the thin metal plate 11 via the insulating adhesive 12 and the sealing resin 16 is formed, a pattern is formed and the surface of the thin metal plate 11 is plated with nickel and gold. Since the external connection terminal 11C was formed by applying surface treatment by polishing, it was possible to prevent scratches and dirt from occurring on the surface of the external connection terminal 110, and the appearance quality could be ensured.

第2図の本実施例による集積回路装置の寸法は、タテ1
0ff、 ヨ:712ffl、4角の曲率半径1.51
RMで、厚さは外部接続用端子11Cと封止樹脂16と
を併せて0.65JIIであり、極めて寸法精度がよく
、寸法のバラツキは、厚さ寸法で±20μm以下であり
小さかった。
The dimensions of the integrated circuit device according to this embodiment shown in FIG.
0ff, Yo: 712ffl, radius of curvature of four corners 1.51
In RM, the thickness of the external connection terminal 11C and the sealing resin 16 was 0.65JII, and the dimensional accuracy was extremely good, and the dimensional variation was small, being ±20 μm or less in the thickness dimension.

厚さの各部首法は、おおよそ外部接続用端子110が0
,04!I1M、集積回路素子13が0.36MM。
For each radical method of thickness, the external connection terminal 110 is approximately 0.
,04! I1M, integrated circuit element 13 is 0.36MM.

集積回路素子13の下の絶縁性接着材12が0.03n
1集積回路素子13上の封止樹脂16が0.23朋であ
った。
The thickness of the insulating adhesive 12 under the integrated circuit element 13 is 0.03n.
The sealing resin 16 on the 1 integrated circuit element 13 was 0.23 mm.

また、本実施例による集積回路装置の封止樹脂15の形
状は、第2図に示すように、θを約8゜度とした台形形
状とし、表面15bを、粗面化して表面あらさ6〜16
μm程度の凹凸形状とし、コーナ一部分16aを、曲率
半径約0.2111の曲面とした。
The shape of the sealing resin 15 of the integrated circuit device according to this embodiment is, as shown in FIG. 16
It has an uneven shape of about μm, and a corner portion 16a is a curved surface with a radius of curvature of about 0.2111.

以上のように、本実施例の集積回路装置の製造方法は、
金属薄板11を外部接続用端子11Cとするため、金属
薄板11の一部を除去し所望の形状とする加工は、成形
金型を用いて封圧樹脂16を形成し、集積回路素子13
および電気的接続部分を封止樹脂16で覆ったのちに行
うものであり、集積回路素子13の搭載接続から外部接
続用端子11Ctのパターン形成までの工程では、金属
薄板11は凹凸のない平板であるので、樹脂封止時に樹
脂の流出を防止のだめの手段は不要であり、型締め時、
十分な圧力で型締めを行うことができ、上金型16bは
金属薄板11に良好に密着し、封止樹脂16の流出がな
く、薄パリの発生が防止でき、良好に封止樹脂16が形
成できた。
As described above, the method for manufacturing the integrated circuit device of this example is as follows:
In order to use the thin metal plate 11 as an external connection terminal 11C, a part of the thin metal plate 11 is removed and processed into a desired shape.
This is done after covering the electrical connection portion with the sealing resin 16, and in the process from mounting and connecting the integrated circuit element 13 to patterning the external connection terminals 11Ct, the metal thin plate 11 is a flat plate with no unevenness. Therefore, there is no need for any means to prevent the resin from flowing out during resin sealing, and when the mold is clamped,
The mold can be clamped with sufficient pressure, the upper mold 16b is in good contact with the thin metal plate 11, the sealing resin 16 does not flow out, the generation of thin flakes can be prevented, and the sealing resin 16 is well sealed. I was able to form it.

また、金属薄板11に、絶縁性接着材12を介して集積
回路素子13の搭載接続および封圧樹脂15の形成を行
った後に、パターン形成および金属薄板11の表面にニ
ッケルめっきおよび金めつきによる表面処理を施して外
部接続用端子110を形成したので、外部接続用端子1
1cの表面に傷や汚れの発生が防止でき、外観的品質が
確保できた。
Further, after the integrated circuit element 13 is mounted and connected to the thin metal plate 11 via the insulating adhesive 12 and the sealing resin 15 is formed, a pattern is formed and the surface of the thin metal plate 11 is plated with nickel and gold. Since the external connection terminal 110 was formed by surface treatment, the external connection terminal 1
It was possible to prevent the occurrence of scratches and dirt on the surface of 1c, and the appearance quality was ensured.

また、金属薄板11の形状加工は封止樹脂16の形成後
に行ったので、金属薄板11は、厚みを36μmと極め
て薄くしても、工程搬送時の安定性は高く、金属薄板1
1を薄くできた分、集積回路素子13および封止樹脂1
6の厚みを厚くでき、集積回路装置の強度を向上させる
ことができた。
In addition, since the shape processing of the metal thin plate 11 was performed after the formation of the sealing resin 16, even if the thickness of the metal thin plate 11 is made extremely thin at 36 μm, the stability during process transportation is high, and the metal thin plate 1
1 can be made thinner, the integrated circuit element 13 and the sealing resin 1 can be made thinner.
6 could be made thicker, and the strength of the integrated circuit device could be improved.

また、金属薄板11を極めて薄くし、外部接続用端子1
1cの形成加工は、化学的エツチングにより行ったので
、細密なパターンの形成ができた。
In addition, the thin metal plate 11 is made extremely thin, and the external connection terminal 1
Since the formation process of 1c was carried out by chemical etching, a fine pattern could be formed.

さらに、絶縁性接着材12は、電気的接続部分を除いて
、封止樹脂15を形成する金属薄板11の一面112L
の大部分に設けたので、金属薄板11と封止樹脂15と
の密着性は、十分な強度が得られた。
Further, the insulating adhesive 12 is applied to one surface 112L of the thin metal plate 11 forming the sealing resin 15, excluding the electrical connection portion.
Since the metal thin plate 11 and the sealing resin 15 were provided in a large portion thereof, sufficient strength of the adhesion between the thin metal plate 11 and the sealing resin 15 was obtained.

発明の効果 以上のように本発明は、金属薄板の一面に絶縁性接着材
を介して集積回路素子を搭載し、前記集積回路素子の入
出力電極と前記金属薄板の一面とを電気的に接続し、前
記金属薄板の一面側において前記集積回路素子および前
記電気的接続部分を前記封止樹脂で覆い、そののちに、
前記金属薄板の一部を除去し、前記金属薄板を所望の形
状の外部接続用端子とする集積回路装置の製造方法であ
る。
Effects of the Invention As described above, the present invention mounts an integrated circuit element on one side of a thin metal plate via an insulating adhesive, and electrically connects the input/output electrodes of the integrated circuit element to one side of the thin metal plate. Then, the integrated circuit element and the electrical connection portion are covered with the sealing resin on one side of the thin metal plate, and then,
This is a method of manufacturing an integrated circuit device in which a part of the thin metal plate is removed and the thin metal plate is used as an external connection terminal having a desired shape.

これにより、従来用いられていた高価なスルーホール ル形成等の基板形成に伴うコスト、品質他の問題が解決
でき、薄型の集積回路装置が安価で高品質に製造できる
ことになる。
This makes it possible to solve cost, quality, and other problems associated with substrate formation, such as the formation of expensive through-holes, which have been conventionally used, and it becomes possible to manufacture thin integrated circuit devices at low cost and with high quality.

同時に、外部接続用端子を設けるため金属薄板の一部を
除去し所望の形状とする加工は、集積回路素子および電
気的接続部分を封止樹脂で覆ったのちに行うものであり
、集積回路素子の搭載接続から外部接続用端子のパター
ン形成までの工程では、金属薄板平板であるので、以下
の数多くの効果を有する。
At the same time, the process of removing a part of the thin metal plate and shaping it into the desired shape in order to provide terminals for external connections is carried out after the integrated circuit element and electrical connection parts are covered with sealing resin. In the process from mounting connection to patterning of external connection terminals, since the metal thin plate is used, it has the following numerous effects.

■ 樹脂封止時に樹脂の流出を防止のための手段は不要
であり、封止樹脂の流出がなく、薄バリの発生が防止で
き、良好に封止樹脂が形成できる。
(2) There is no need for any means to prevent the resin from flowing out during resin sealing, the sealing resin does not flow out, the generation of thin burrs can be prevented, and the sealing resin can be formed satisfactorily.

■ 外部接続用端子の表面処理は、各工程を経たのちに
行えるので、外部接続用端子の表面に傷や汚れの発生が
防止でき、外観的品質が確保できる。
■ Since the surface treatment of the external connection terminal can be performed after each process, it is possible to prevent scratches and dirt from occurring on the surface of the external connection terminal, and to ensure the quality of the external appearance.

■ 金属薄板の厚みを極めて薄くしても、工程搬送時の
安定性は高く、金属薄板を薄くできた分、集積回路素子
および封止樹脂の厚みを厚くでき、集積回路装置の強度
を向上させることができる。
■ Even if the thickness of the thin metal sheet is made extremely thin, it remains stable during process transportation, and by making the thin metal sheet thinner, the thickness of the integrated circuit element and sealing resin can be increased, improving the strength of the integrated circuit device. be able to.

■ 集積回路素子の搭載接続から外部接続用端子の形成
までの工程では、集積回路素子の各入出力電極は全て連
続した一つの金属薄板に接続され、同電位であるので、
これらの工程中に静電気により集積回路素子が破壊され
ることがない。
■ In the process from mounting and connecting the integrated circuit element to forming external connection terminals, each input and output electrode of the integrated circuit element is all connected to one continuous thin metal plate and has the same potential.
Integrated circuit elements are not destroyed by static electricity during these steps.

また、金属薄板を極めて薄くシ、外部接続用端子の形成
加工は、化学的エツチングにより行うので・細密なパタ
ーンの形成ができる。
In addition, since the thin metal plate is made extremely thin and the external connection terminals are formed by chemical etching, it is possible to form fine patterns.

さらに、絶縁性接着材は、電気的接続部分を除いて、封
止樹脂を形成する金属薄板の一面の大部分に設けたので
、金属薄板と封止樹脂との密着性か向上する。
Furthermore, since the insulating adhesive material is provided on most of one surface of the thin metal plate forming the sealing resin, excluding the electrical connection portion, the adhesion between the thin metal plate and the sealing resin is improved.

以上のように、本発明は、極めて高品質な集積回路装置
が容易に製造できるものである。
As described above, the present invention allows extremely high quality integrated circuit devices to be easily manufactured.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例における集積回路装置の製造
方法を説明するだめの各工程における縦断面図、第2図
は本発明の一実施例における製造方法により得た集積回
路装置の縦断面図、第3図は本発明の一実施例における
封止樹脂の形成方法を説明するだめの縦断面図、第4図
はreカードの斜視図、第6図は従来のICカードの一
部の縦断面図、第6図は従来の集積回路装置の縦断面図
である。 11・・・・・・金属薄板、11a・・・・・・−面、
11b・・・・・・他面、110・・・・・・外部接続
用端子、12・・・・・・絶縁性接着材、13・・・・
・・集積回路素子、14・・・・・・金属線、16・・
・・・・封止樹脂、16・・・・・・成形金型。 代理人の氏名 弁理士 粟 野 重 孝 ほか1名画 図 第 図 盆X簿坂 1/
FIG. 1 is a longitudinal cross-sectional view of each process for explaining a method of manufacturing an integrated circuit device according to an embodiment of the present invention, and FIG. 2 is a longitudinal cross-sectional view of an integrated circuit device obtained by a method of manufacturing an integrated circuit device according to an embodiment of the present invention. 3 is a vertical sectional view of a container for explaining the method of forming a sealing resin in an embodiment of the present invention, FIG. 4 is a perspective view of a RE card, and FIG. 6 is a part of a conventional IC card. FIG. 6 is a vertical cross-sectional view of a conventional integrated circuit device. 11... Metal thin plate, 11a... - side,
11b...Other side, 110...External connection terminal, 12...Insulating adhesive, 13...
...Integrated circuit element, 14...Metal wire, 16...
...Sealing resin, 16...Molding mold. Name of agent: Patent attorney Shigetaka Awano and 1 other famous painters

Claims (4)

【特許請求の範囲】[Claims] (1)金属薄板の一面に絶縁性接着材を介して集積回路
素子を搭載し、前記集積回路素子の入出力電極と前記金
属薄板の一面とを電気的に接続し、前記金属薄板の一面
側において前記集積回路素子および前記電気的接続部分
を封止樹脂で覆い、そののちに、前記金属薄板の一部を
除去し、前記金属薄板を所望の形状の外部接続用端子と
する集積回路装置の製造方法。
(1) An integrated circuit element is mounted on one side of a thin metal plate via an insulating adhesive, the input/output electrodes of the integrated circuit element and one side of the thin metal plate are electrically connected, and one side of the thin metal plate is In the integrated circuit device, the integrated circuit element and the electrical connection portion are covered with a sealing resin, and then a part of the metal thin plate is removed, and the metal thin plate is used as an external connection terminal of a desired shape. Production method.
(2)絶縁性接着材は、電気的接続部分を除いて、封止
樹脂を形成する金属薄板の一面の大部分に設ける請求項
1記載の集積回路装置の製造方法。
(2) The method for manufacturing an integrated circuit device according to claim 1, wherein the insulating adhesive is provided on most of one surface of the thin metal plate forming the sealing resin, excluding the electrical connection portion.
(3)金属薄板の一部を除去し、所望の形状とする加工
は、化学的エッチングにより行う請求項1記載の集積回
路装置の製造方法。
(3) The method of manufacturing an integrated circuit device according to claim 1, wherein the process of removing a portion of the thin metal plate and shaping it into a desired shape is carried out by chemical etching.
(4)封止樹脂による封止は、金型を用いて行う請求項
1記載の集積回路装置の製造方法。
(4) The method for manufacturing an integrated circuit device according to claim 1, wherein the sealing with the sealing resin is performed using a mold.
JP63307373A 1988-12-05 1988-12-05 Manufacture of integrated circuit device Pending JPH02153542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63307373A JPH02153542A (en) 1988-12-05 1988-12-05 Manufacture of integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63307373A JPH02153542A (en) 1988-12-05 1988-12-05 Manufacture of integrated circuit device

Publications (1)

Publication Number Publication Date
JPH02153542A true JPH02153542A (en) 1990-06-13

Family

ID=17968282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63307373A Pending JPH02153542A (en) 1988-12-05 1988-12-05 Manufacture of integrated circuit device

Country Status (1)

Country Link
JP (1) JPH02153542A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334948A (en) * 1994-03-18 2002-11-22 Hitachi Chem Co Ltd Semiconductor package, substrate for semiconductor element mounting and method of manufacturing them
JP2002334950A (en) * 1994-03-18 2002-11-22 Hitachi Chem Co Ltd Method of manufacturing semiconductor package and semiconductor package
US6746897B2 (en) 1994-03-18 2004-06-08 Naoki Fukutomi Fabrication process of semiconductor package and semiconductor package

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334948A (en) * 1994-03-18 2002-11-22 Hitachi Chem Co Ltd Semiconductor package, substrate for semiconductor element mounting and method of manufacturing them
JP2002334950A (en) * 1994-03-18 2002-11-22 Hitachi Chem Co Ltd Method of manufacturing semiconductor package and semiconductor package
US6746897B2 (en) 1994-03-18 2004-06-08 Naoki Fukutomi Fabrication process of semiconductor package and semiconductor package
EP1213755A3 (en) * 1994-03-18 2005-05-25 Hitachi Chemical Co., Ltd. Fabrication process of semiconductor package and semiconductor package
EP1213756A3 (en) * 1994-03-18 2005-05-25 Hitachi Chemical Co., Ltd. Fabrication process of semiconductor package and semiconductor package
US7187072B2 (en) 1994-03-18 2007-03-06 Hitachi Chemical Company, Ltd. Fabrication process of semiconductor package and semiconductor package
JP2008153708A (en) * 1994-03-18 2008-07-03 Hitachi Chem Co Ltd Method of manufacturing semiconductor package

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