JPH021531B2 - - Google Patents
Info
- Publication number
- JPH021531B2 JPH021531B2 JP11104382A JP11104382A JPH021531B2 JP H021531 B2 JPH021531 B2 JP H021531B2 JP 11104382 A JP11104382 A JP 11104382A JP 11104382 A JP11104382 A JP 11104382A JP H021531 B2 JPH021531 B2 JP H021531B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- annealing
- electron
- laser
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 32
- 238000000137 annealing Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明は電子ビームによつて絶縁膜上の多結晶
シリコンを単結晶化するSOI（Silicon on
Insulation）技術、又は集積回路基板のイオン打
込によつて生ずる注入層の欠陥を回復させ活性化
する電子ビームアニール方法に関する。[Detailed Description of the Invention] (a) Technical Field of the Invention The present invention relates to SOI (Silicon on
The present invention relates to an electron beam annealing method for recovering and activating defects in an implanted layer caused by ion implantation of an integrated circuit substrate.
(b) 技術の背景
将来の三次元集積回路の基礎として非晶質絶縁
膜上に単結晶を成長させる所謂SOI技術が注目さ
れておりレーザビームや電子ビームを用いて実現
されつゝある。(b) Background of the technology The so-called SOI technology, which grows a single crystal on an amorphous insulating film, is attracting attention as a basis for future three-dimensional integrated circuits, and is being realized using laser beams and electron beams.
(c) 従来技術と問題点
レーザアニールの一例として連続発振（CW）
モードのアニールでは照射時間が長い分だけ熱伝
導によるエネルギー散逸が生ずるため必要なエネ
ルギー密度も103J／cm2程度と大きく、多くの例で
はアルゴン（Ar）、クリプトン（Kr）等のレー
ザ光を直径10〜30μｍ程度に集束して１cm／sec程
度の速度で照射する。従つて集積回路基板は高密
度のレーザパワーを数ｍsecの間、照射を受ける
ことになる。基板表面に吸収されたレーザ光は瞬
間のうちに熱となり表面の温度を上昇させる。こ
の熱はシリコンの高い熱伝導により深部に伝播
し、イオン注入層にアニール効果を与える。アニ
ール効果はレーザ光照射によつて発生する熱分布
によつて決まるがこの分布はレーザ光の吸収係
数、反射率、レーザパルス時間幅及び集積回路基
板の熱拡散係数、比熱、融触熱、融点等の熱力学
的パラメータによつて決まる。(c) Conventional technology and problems Continuous wave (CW) as an example of laser annealing
In mode annealing, the longer the irradiation time, the more energy is dissipated due to thermal conduction, so the required energy density is as high as about 10 3 J/cm 2 . is focused to a diameter of about 10 to 30 μm and irradiated at a speed of about 1 cm/sec. Therefore, the integrated circuit board is irradiated with high-density laser power for several milliseconds. The laser light absorbed by the substrate surface instantly turns into heat, raising the temperature of the surface. This heat propagates deep due to the high thermal conductivity of silicon, giving an annealing effect to the ion-implanted layer. The annealing effect is determined by the heat distribution generated by laser beam irradiation, and this distribution is determined by the absorption coefficient of the laser beam, reflectance, laser pulse duration, thermal diffusion coefficient of the integrated circuit board, specific heat, fusion heat, and melting point. It is determined by thermodynamic parameters such as
またCWレーザアニールでは集積回路基板上に
急激な加熱による熱歪を緩和し、レーザ光のパワ
ー不足を補うため予め基板を予備加熱し、レーザ
光を照射する方法が一般的である。 In addition, in CW laser annealing, a common method is to preheat the substrate in advance and irradiate it with laser light in order to alleviate thermal distortion caused by rapid heating on the integrated circuit board and compensate for the lack of laser light power.
レーザ光照射によるアニール法に対して本発明
者は電子の加速性に優れ、高エネルギー密度が容
易に得られる電子ビームによるアニール法に着目
したものである。 In contrast to the annealing method using laser beam irradiation, the present inventors focused on an annealing method using an electron beam, which has excellent electron acceleration properties and can easily obtain a high energy density.
しかし電子ビーム装置は減圧された装置内で加
速電子を照射するもので高エネルギーでありしか
も基板に予備加熱を与えることは装置が複雑とな
り困難である。しかも急激なエネルギー加熱は基
板に熱歪を発生させるため電子ビームによるアニ
ール法は困難視されていた。 However, the electron beam device irradiates accelerated electrons in a reduced pressure device, which requires high energy, and it is difficult to preheat the substrate because the device is complicated. Moreover, rapid energy heating causes thermal distortion in the substrate, so annealing using an electron beam has been considered difficult.
(d) 発明の目的
本発明は上記の点に鑑み電子ビームを放射する
電子銃を所定の出力容量に切替可能とする電子ビ
ームアニール装置を用い試料上に電子ビームを照
射する電子ビームアニール方法の提供を目的とす
る。(d) Purpose of the Invention In view of the above points, the present invention provides an electron beam annealing method in which an electron beam is irradiated onto a sample using an electron beam annealing device in which an electron gun that emits an electron beam can be switched to a predetermined output capacity. For the purpose of providing.
(e) 発明の構成
上記目的は本発明によれば試料上に照射する電
子ビームのビーム電流の大きさを切替可能な電子
ビームアニール装置を用い、該試料上に低ビーム
電流の電子ビームを照射して予備加熱を加え、次
いで高ビーム電流の電子ビームを照射して本加熱
することによつて達せられる。(e) Structure of the Invention According to the present invention, the above object is to irradiate an electron beam with a low beam current onto the sample by using an electron beam annealing device that can switch the magnitude of the beam current of the electron beam irradiated onto the sample. This is achieved by applying preheating by heating, and then performing main heating by irradiating with an electron beam at a high beam current.
(f) 発明の実施例
以下本発明の実施例について図面により詳述す
る。(f) Examples of the invention Examples of the invention will be described in detail below with reference to the drawings.
第１図は本発明の一実施例である電子ビームア
ニール装置の構成を示す図である。第２図は本発
明の一実施例である電源切替を示すブロツク図で
ある。図中１は電子ビーム光学系、２はウエハホ
ルダー、３は集積回路基板（ウエハ）、４は電算
機、５は照射位置メモリ、６はステージ、７は電
子銃、８は切替スイツチ、９，１０は電源をそれ
ぞれ示す。 FIG. 1 is a diagram showing the configuration of an electron beam annealing apparatus which is an embodiment of the present invention. FIG. 2 is a block diagram showing power supply switching according to an embodiment of the present invention. In the figure, 1 is an electron beam optical system, 2 is a wafer holder, 3 is an integrated circuit board (wafer), 4 is a computer, 5 is an irradiation position memory, 6 is a stage, 7 is an electron gun, 8 is a changeover switch, 9, 10 each indicates a power source.
電子ビームアニール装置によつてアニールした
い領域情報を予め照射位置メモリ５に電算機４に
より入力する。電算機４は電子ビームの偏向とウ
エハホルダー２及びウエハ３を載置するステージ
６を移動制御し、ウエハ３の所定位置に定電流の
電子ビームを照射するよう信号を出し電子ビーム
をオフ、オンする。 Information on a region to be annealed by the electron beam annealing device is input in advance into the irradiation position memory 5 by the computer 4. The computer 4 controls the deflection of the electron beam and the movement of the wafer holder 2 and the stage 6 on which the wafer 3 is placed, and issues a signal to irradiate a constant current electron beam to a predetermined position on the wafer 3, turning the electron beam off and on. do.
電子銃７に入力する電源９，１０は電算機４を
介して切替SW８により切替えられる。電源９は
低電流の電子ビーム出力用であり、電源１０は高
電流の電子ビーム出力用とし、例えば4φのウエ
ハ３をアニールする場合まづ高速（20mm／sec〜
30mm／sec）でウエハ表面に電算機４により指示
された電源９の入力により励起される低電流の電
子ビームを全面照射して、所望の表面温度に上昇
させ予備加熱する。次に切替スイツチ８により電
源１０が入力され、高電流（１ｍＡ〜２ｍＡ）の
電子ビームを電算機４により制御されるウエハ３
上の所定位置に照射して本アニールを行う。 Power supplies 9 and 10 input to the electron gun 7 are switched via the computer 4 by a switching SW 8. The power supply 9 is for outputting a low-current electron beam, and the power supply 10 is for outputting a high-current electron beam.
The wafer surface is irradiated with a low current electron beam excited by the input of the power supply 9 instructed by the computer 4 at a speed of 30 mm/sec) to preheat the surface to a desired surface temperature. Next, the power supply 10 is inputted by the changeover switch 8, and a high current (1 mA to 2 mA) electron beam is applied to the wafer 3, which is controlled by the computer 4.
The main annealing is performed by irradiating the upper predetermined position.
装置内は減圧し真空に維持されるから予備加熱
は急冷することなく本アニールを行うことができ
る。 Since the pressure inside the apparatus is reduced and maintained in a vacuum, main annealing can be performed during preheating without rapid cooling.
予備加熱用電源P1と本アニール用電源P2を別
個に設け、電算機４によつて制御される切替スイ
ツチ８により電子ビーム光学系１の電子銃７に入
力されるから極く短時間（数ｍsec以内）で相互
に切替が可能となる。ある時間略同じ表面温度を
保つ必要がある場合には予備加熱用の高速走査と
本アニール用の通常走査を順番に繰返してアニー
ルすれば、レーザアニールの抵抗加熱したのと同
じ効果を得ることができる。 The power supply P 1 for preheating and the power supply P 2 for main annealing are provided separately, and the input is made to the electron gun 7 of the electron beam optical system 1 by the changeover switch 8 controlled by the computer 4, so that the power supply P 2 for main annealing is extremely short ( Mutual switching is possible within several milliseconds). If it is necessary to maintain approximately the same surface temperature for a certain period of time, repeating high-speed scanning for preheating and normal scanning for main annealing in order can achieve the same effect as resistance heating with laser annealing. can.
(g) 発明の効果
以上詳細に説明したように本発明の電子ビーム
アニール装置を用いることにより従来のレーザア
ニール方式に比し高速化が可能となるうえ特にア
ニール領域を制御できる優れた効果がある。(g) Effects of the invention As explained in detail above, by using the electron beam annealing apparatus of the present invention, it is possible to increase the speed compared to the conventional laser annealing method, and there is an excellent effect in that the annealing region can be particularly controlled. .
第１図は本発明の一実施例である電子ビームア
ニール装置を示す構成図、第２図は本発明の一実
施例である電源切替を示すブロツク図である。
図において１は電子ビーム光学系、２はウエハ
ホルダー、３はウエハ、４は電算機、５は照射位
置メモリ、６はステージ、７は電子銃、８は切替
スイツチ、９，１０は電源を示す。
FIG. 1 is a block diagram showing an electron beam annealing apparatus according to an embodiment of the present invention, and FIG. 2 is a block diagram showing power supply switching according to an embodiment of the present invention. In the figure, 1 is an electron beam optical system, 2 is a wafer holder, 3 is a wafer, 4 is a computer, 5 is an irradiation position memory, 6 is a stage, 7 is an electron gun, 8 is a changeover switch, and 9 and 10 are power supplies. .
Claims (1)
大きさを切替可能な電子ビームアニール装置を用
い、該試料上に低ビーム電流の電子ビームを照射
して予備加熱を加え、次いで高ビーム電流の電子
ビームを照射して本加熱することを特徴とする電
子ビームアニール方法。1 Using an electron beam annealing device that can switch the magnitude of the beam current of the electron beam irradiated onto the sample, the sample is irradiated with an electron beam with a low beam current to preheat it, and then an electron beam with a high beam current is applied to the sample. An electron beam annealing method characterized by main heating by beam irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11104382A JPS594435A (en) | 1982-06-28 | 1982-06-28 | Electron beam annealing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11104382A JPS594435A (en) | 1982-06-28 | 1982-06-28 | Electron beam annealing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS594435A JPS594435A (en) | 1984-01-11 |
| JPH021531B2 true JPH021531B2 (en) | 1990-01-11 |
Family
ID=14550958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11104382A Granted JPS594435A (en) | 1982-06-28 | 1982-06-28 | Electron beam annealing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS594435A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61266387A (en) * | 1985-05-20 | 1986-11-26 | Fujitsu Ltd | Method for recrystallizing semiconductor thin film with laser |
-
1982
- 1982-06-28 JP JP11104382A patent/JPS594435A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS594435A (en) | 1984-01-11 |
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