JPH02152267A - Lead frame parallel-connected by cu alloy/fe-ni alloy - Google Patents
Lead frame parallel-connected by cu alloy/fe-ni alloyInfo
- Publication number
- JPH02152267A JPH02152267A JP30629488A JP30629488A JPH02152267A JP H02152267 A JPH02152267 A JP H02152267A JP 30629488 A JP30629488 A JP 30629488A JP 30629488 A JP30629488 A JP 30629488A JP H02152267 A JPH02152267 A JP H02152267A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- lead frame
- thermal expansion
- band
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 21
- 229910000990 Ni alloy Inorganic materials 0.000 title claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 21
- 239000000956 alloy Substances 0.000 claims abstract description 21
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims abstract description 15
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 29
- 238000003466 welding Methods 0.000 abstract description 5
- 229910001128 Sn alloy Inorganic materials 0.000 abstract description 3
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 101150110330 CRAT gene Proteins 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、IC,LSIなどの半導体機器のリードフレ
ーム用として好適な複合金属材料に関し、特に2種以上
の材料の並接接合から成るCu合金/ F e −N
j合金並接型リードフレームに関するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a composite metal material suitable for lead frames of semiconductor devices such as ICs and LSIs, and in particular to a composite metal material made of a parallel bond of two or more materials. Alloy/Fe-N
The present invention relates to a J-alloy parallel lead frame.
[従来の技術]
IC,LSIなどの半導体機器において、Siなどの半
導体チップを支えながら情報伝達のためのソート部を構
成しているり一1〜フレームには、ICの構成要素とし
て種々の特性か要求される。即ち、王な特性として、熱
伝導性(導電性)に優れていること、強度か比較的高い
こと、繰り返し曲げ性の良好なこと、熱膨張係数の小さ
いこと、メツキ性に優れることなどが求められる。[Prior Art] In semiconductor devices such as ICs and LSIs, frames that support semiconductor chips such as Si and constitute a sorting section for information transmission have various characteristics as IC components. required. In other words, the main characteristics required are excellent thermal conductivity (electrical conductivity), relatively high strength, good repeated bendability, low coefficient of thermal expansion, and excellent plating properties. It will be done.
リードフレーム用材料としては、従来から熱膨張係斂か
小さく、セラミックやガラスによる封着性に憬れた42
合金(F e −42%Ni)か多用されてきたか、近
年は、IC等の低コスト化と高集積化の趨勢に伴う放熱
性(熱伝導性)の要求から、比較的に安価で熱伝導性の
良好な銅系材料の使用か増えている。42 has traditionally been used as a material for lead frames because it has a small coefficient of thermal expansion and has good sealing properties with ceramics and glass.
Alloy (F e -42%Ni) has been widely used, and in recent years, due to the demand for heat dissipation (thermal conductivity) accompanying the trend toward lower cost and higher integration of ICs, it has become a relatively inexpensive and heat conductive material. The use of copper-based materials, which have good properties, is increasing.
銅系材料としては、Cu −0,15$ S n合金C
DA194 lCu−2,4%Fe−0,1!Zn1C
u −0,I%F e合金などが主に用いられている。As copper-based materials, Cu -0,15$ Sn alloy C
DA194 lCu-2,4%Fe-0,1! Zn1C
U-0, I%Fe alloy etc. are mainly used.
[発明が解決しようとする課題]
最近は、IC,LSI等の高集積化の′a展はめざまし
く、半導体チップは大型化してきている。[Problems to be Solved by the Invention] Recently, there has been a remarkable increase in the integration of ICs, LSIs, etc., and semiconductor chips have become larger.
チップサイズか大きい場合には、チウプとリートフレー
ム間に熱膨張係数の大きなギャップかあると、チップを
ソートフレームにタイ・ボンデインク’ (300〜4
00°Cでのろうすけ)する際にチップに割れを生ずる
ことかあり、無視できない問題である。If the chip size is large, if there is a large gap in the coefficient of thermal expansion between the chip and the Riet frame, tie the chip to the sorting frame.
This is a problem that cannot be ignored, as cracks may occur in the chip when waxing at 00°C.
一上記のような要請に対しては、単体材料の改良ては特
性の実現は困難であり、銅系材料と鉄系材ネ4から成る
クラット材等か開発或は研究され一部はり−トフレーム
用として提案されているか、従来公知のサンドイッチ形
の複合金属材料においては、高熱伝導性と強度の面で要
求レベルに対して高度に兼ね備えたものにすることは困
難である。1) In order to meet the above requirements, it is difficult to achieve the desired characteristics by improving single materials, and some materials such as crat materials made of copper-based materials and iron-based materials have been developed or researched. In sandwich-type composite metal materials that have been proposed for use in frames or are conventionally known, it is difficult to achieve a high level of thermal conductivity and strength that meet the required levels.
[課題を解決するための手段]
本発明は、上述の問題点を解決する目的でなされたもの
で、高導電性のCu合金からなる帯材の両端に低熱膨張
性のF e −N を合金からなる帯材を同厚にして板
幅方向に並接一体止することにより、放熱性と機械的強
度、さらには熱膨張の整合性に優れた新規な構造のり一
ドフェレームを提供するものである。[Means for Solving the Problems] The present invention was made for the purpose of solving the above-mentioned problems, and includes alloying Fe-N with low thermal expansion at both ends of a strip material made of a highly conductive Cu alloy. By making strips of the same thickness and integrally fixing them side by side in the width direction, we provide a glued ferreme with a new structure that has excellent heat dissipation, mechanical strength, and thermal expansion consistency. .
[作用]
上記のように、高導電性のCu合金からなる帯材の両端
に低熱膨張性のF e −N i合金からなる帯材を板
幅方向に並接一体止することにより、第3図に示すよう
に、主としてCu合金が受は持つソートフレームの半導
体チウプ支持部3の熱放散性か確保されると共に、主と
してF e −N i合金か受は持つリードフレームの
足部分(リート部分4)の機械的強度か確保される。リ
ードフレームのリード部分4は、IC,LSI等の半導
体機器にあっては、折り曲げ加工して使用されることか
ら、それに応した機械的強度が必要である。[Function] As described above, by integrally fixing the strip material made of a low thermal expansion Fe-Ni alloy to both ends of the strip material made of a highly conductive Cu alloy in parallel in the plate width direction, the third As shown in the figure, the heat dissipation property of the semiconductor chip support part 3 of the sort frame which is mainly made of Cu alloy is ensured, and the foot part (leat part) of the lead frame which is mainly made of Fe-Ni alloy is secured. 4) Mechanical strength is ensured. Since the lead portion 4 of the lead frame is used after being bent in semiconductor devices such as ICs and LSIs, it is necessary to have mechanical strength corresponding to the bending process.
半導体チップ支持部は、熱放散性と共に熱膨張の整合性
か必要であり、この点については、本来低熱膨張性のF
e −N i合金か有利であるか、本発明においては
、Cu合金の両端にF e −N i合金を配置するこ
とによりこの両端のF e −N i合金かCu合金の
熱膨張を低く抑える作用をし、全体として熱膨張の整合
性が確保される。The semiconductor chip support needs to have thermal expansion consistency as well as heat dissipation.
In the present invention, by arranging the Fe-Ni alloy at both ends of the Cu alloy, the thermal expansion of the Fe-Ni alloy or the Cu alloy at both ends is kept low. This ensures consistency in thermal expansion as a whole.
[実施例]
第2図は、高導電性のCu合金からなる帯材lの片端に
低熱膨張性のFe−Ni合金からなる帯材2を板幅方向
に並接一体止した構造のソートフレームの横断面図を示
し、第1図は、本発明の一実施例として高導電性のCu
合金からなる帯材1の両端に低熱膨張性のF e −N
i合金からなる帯材2を板幅方向に3枚並接一体止し
たトリメタル構造のソートフレームの横断面図を示すも
のである。[Example] Fig. 2 shows a sorting frame having a structure in which a strip material 2 made of a low thermal expansion Fe-Ni alloy is fixed to one end of a strip material l made of a highly conductive Cu alloy in parallel in the sheet width direction. FIG. 1 shows a cross-sectional view of highly conductive Cu as an example of the present invention.
Low thermal expansion F e -N is applied to both ends of the strip material 1 made of alloy.
This is a cross-sectional view of a sorting frame having a trimetal structure in which three strips 2 made of i-alloy are integrally fixed in parallel in the strip width direction.
ここに、Cu合金としてはCu−0,15%Sn合金を
使用し、Fe−Ni合金としてはFe−42%Ni合金
を使用した。又5第1図において、 Wl材1としては
板厚0.2mm、板幅Inn mのものを使用し、帯材
2としては夫々板厚0.2mm、板幅7mmのものを使
用した。Here, a Cu-0.15% Sn alloy was used as the Cu alloy, and a Fe-42% Ni alloy was used as the Fe-Ni alloy. Further, in FIG. 1, the Wl material 1 used had a thickness of 0.2 mm and a width of Innm, and the strip material 2 had a thickness of 0.2 mm and a width of 7 mm.
第2図の場合は、Cu合金からなる帯材lの片端にのみ
F e −N i合金からなる帯材2を並接−体止して
いるので、リードフレームの用途によっては、熱放散性
及び機械的強度を確保することかできても、熱膨張の整
合性に問題かある6又、熱膨張の不整合か原因で反りを
生しることかある。In the case of Fig. 2, the strip material 2 made of Fe--Ni alloy is attached to only one end of the strip material L made of Cu alloy, so depending on the use of the lead frame, the heat dissipation performance may be affected. Even if mechanical strength can be ensured, there may be problems with thermal expansion consistency, or warping may occur due to thermal expansion mismatch.
これに対し、第1図の場合は、Cu合金からなる帯材l
の片端に低熱膨張性のF e −N i合金からなる?
1?材2を板幅方向に並接一体止することにより、熱放
散性及び機械的強度は勿論、熱膨張の整合性についても
所望のものを得ることかてきる。On the other hand, in the case of Fig. 1, the strip material l made of Cu alloy
consists of a low thermal expansion Fe-Ni alloy at one end of the ?
1? By integrally fixing the members 2 side by side in the width direction of the plate, it is possible to obtain the desired thermal expansion consistency as well as heat dissipation and mechanical strength.
各帯材を並列に接合する方法としては、電子ビーム溶接
法、レーザー・ビーム溶接法、プラズマ・アーク溶接法
等によって行うことかできる。The strips may be joined in parallel by electron beam welding, laser beam welding, plasma arc welding, or the like.
[発明の効果]
本発明のリードフレームは、以−ヒ説明したように構成
されているので、以下に記載されるような効果を奏する
。[Effects of the Invention] Since the lead frame of the present invention is configured as described below, it exhibits the effects described below.
(1)Fe−Ni合金の持つ高い強度(特にソート部)
と低熱膨張性とを有し、1jつ、Cu合金の熱放散性と
電気抵抗か小さい両者の特性を併せ持つリードフレーム
として従来にない新しい機能を持つものである。(1) High strength of Fe-Ni alloy (especially in the sorting part)
It has a new function that has never been seen before as a lead frame that has both the heat dissipation properties and low electrical resistance of a Cu alloy.
(2)電子ビーム溶接等により、容易に帯材の両端を接
合出資るのて極めて生産性か高く、そのコストか低い。(2) Both ends of the strip can be easily joined by electron beam welding or the like, resulting in extremely high productivity and low cost.
(3)板幅等を変えることにより要求性能へのマツチン
グか容易となり、リードフレームとしての適用性か向上
する。(3) By changing the plate width, etc., it becomes easier to match the required performance, and the applicability as a lead frame is improved.
第2図は、比較例としてCu合金からなる帯材の片端に
Fe−Ni合金からなる帯材を並接一体化した構凸のリ
ードフレームの横断面図を示し第1図は、本発明の一実
施例としてCu合金からなる帯材の両端にF e −N
i合金からなる帯材を並接一体止した構造のソードフ
レームの横断面図を示すものである。第3図は、第1図
に示すソートフレームを打ち抜いてパターン形状化した
ものの−・部上面図である。
l・・・Cu合金からなる帯材
2・・・Fe−Ni合金からなる帯材
第3FIG. 2 is a cross-sectional view of a convex lead frame in which a Fe-Ni alloy strip is juxtaposed and integrated with one end of a Cu alloy strip as a comparative example. As an example, Fe-N is applied to both ends of a strip made of a Cu alloy.
FIG. 2 is a cross-sectional view of a sword frame having a structure in which strips made of i-alloy are joined together in parallel. FIG. 3 is a top view of the sorting frame shown in FIG. 1 which is punched out into a pattern shape. l... Band material 2 made of Cu alloy... Band material 3 made of Fe-Ni alloy
Claims (1)
のFe−Ni合金からなる帯材を同厚にして板幅方向に
並接一体化してなることを特徴とするCu合金/Fe−
Ni合金並接型リードフレームA Cu alloy/Fe- alloy, characterized in that a strip made of a highly conductive Cu alloy is integrated with strips made of a low thermal expansion Fe-Ni alloy of the same thickness and juxtaposed in the width direction of the plate on both ends of the strip made of a highly conductive Cu alloy.
Ni alloy parallel lead frame
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30629488A JPH02152267A (en) | 1988-12-02 | 1988-12-02 | Lead frame parallel-connected by cu alloy/fe-ni alloy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30629488A JPH02152267A (en) | 1988-12-02 | 1988-12-02 | Lead frame parallel-connected by cu alloy/fe-ni alloy |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02152267A true JPH02152267A (en) | 1990-06-12 |
Family
ID=17955367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP30629488A Pending JPH02152267A (en) | 1988-12-02 | 1988-12-02 | Lead frame parallel-connected by cu alloy/fe-ni alloy |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02152267A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05315528A (en) * | 1992-05-12 | 1993-11-26 | Nec Kyushu Ltd | Lead frame |
DE102009016842A1 (en) * | 2009-04-08 | 2010-10-21 | Tyco Electronics Amp Gmbh | Cable grille for electronics housing and manufacturing process |
US8927342B2 (en) | 2008-10-13 | 2015-01-06 | Tyco Electronics Amp Gmbh | Leadframe for electronic components |
-
1988
- 1988-12-02 JP JP30629488A patent/JPH02152267A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05315528A (en) * | 1992-05-12 | 1993-11-26 | Nec Kyushu Ltd | Lead frame |
US8927342B2 (en) | 2008-10-13 | 2015-01-06 | Tyco Electronics Amp Gmbh | Leadframe for electronic components |
DE102009016842A1 (en) * | 2009-04-08 | 2010-10-21 | Tyco Electronics Amp Gmbh | Cable grille for electronics housing and manufacturing process |
CN102379165A (en) * | 2009-04-08 | 2012-03-14 | 泰科电子Amp有限责任公司 | Conductor grid for electronic housings and manufacturing method |
US8723032B2 (en) | 2009-04-08 | 2014-05-13 | Tyco Electronics Amp Gmbh | Conductor grid for electronic housings and manufacturing method |
DE102009016842B4 (en) * | 2009-04-08 | 2015-01-22 | Tyco Electronics Amp Gmbh | Cable grille for electronics housing and manufacturing process |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3684464A (en) | Composite metal laminate material and lead frame | |
US5001546A (en) | Clad metal lead frame substrates | |
US7652357B2 (en) | Quad flat no-lead (QFN) packages | |
JPH0313331A (en) | Composite material variable in coefficient of thermal expansion and heat conductivity | |
US5444293A (en) | Structure and method for providing a lead frame with enhanced solder wetting leads | |
JPH02231751A (en) | Material for lead frame | |
JPH02152267A (en) | Lead frame parallel-connected by cu alloy/fe-ni alloy | |
JPH0680873B2 (en) | Circuit board | |
KR102216738B1 (en) | Metal Clip for Semiconductor package | |
JPH0530071B2 (en) | ||
JP3508248B2 (en) | Hybrid integrated circuit device | |
JPS6244817B2 (en) | ||
JPH0677678A (en) | Heat sink structure | |
JPS6027151A (en) | Composite metallic filament for mounting semiconductor element | |
JPH0294658A (en) | Member for ic lead | |
JPH06224359A (en) | Semiconductor device | |
JPH03231839A (en) | Copper-based lead frame material | |
JPS6232622B2 (en) | ||
JP2536582B2 (en) | Au-Ag composite brazing filler metal for semiconductor device assembly | |
JPS62106A (en) | Corrugated horn | |
JPH02105449A (en) | Lead frame for semiconductor device | |
JPH03179768A (en) | Lead frame member | |
JPH0964234A (en) | Semiconductor device | |
JPS61100953A (en) | Package for semiconductor device | |
JP2808955B2 (en) | Composite lead frame |