JPH05315528A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPH05315528A JPH05315528A JP11865192A JP11865192A JPH05315528A JP H05315528 A JPH05315528 A JP H05315528A JP 11865192 A JP11865192 A JP 11865192A JP 11865192 A JP11865192 A JP 11865192A JP H05315528 A JPH05315528 A JP H05315528A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- lead frame
- island portion
- semiconductor chip
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Die Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はリードフレームに関し、
特に樹脂封止型の半導体装置に用いるリードフレームに
関する。FIELD OF THE INVENTION The present invention relates to a lead frame,
In particular, the present invention relates to a lead frame used for a resin-sealed semiconductor device.
【０００２】[0002]
【従来の技術】従来のこの種のリードフレームは、図３
に示すように、半導体チップ２を搭載するアイランド部
１４と、半導体チップ２とボンディングワイヤ３で接続
された封止樹脂４の内部の内部リード１５と、外部接続
用の外部リード１６とを備えて構成されていた。2. Description of the Related Art A conventional lead frame of this type is shown in FIG.
As shown in FIG. 3, the semiconductor chip 2 is mounted on the island portion 14, the internal lead 15 inside the sealing resin 4 connected to the semiconductor chip 2 by the bonding wire 3, and the external lead 16 for external connection. Was configured.
【０００３】従来のリードフレームのアイランド部１４
と内部リード１５と外部リード１６とは、ニッケル４２
％の鉄ニッケル合金か、あるいは銅合金の板材からプレ
ス打抜き加工により形成され、したがって、一種類の材
料から構成されているというものであった。The island portion 14 of the conventional lead frame
The inner lead 15 and the outer lead 16 are made of nickel 42
% Iron-nickel alloy or copper alloy plate material, which was formed by press punching, and thus was composed of one kind of material.
【０００４】鉄ニッケル合金は、半導体素子の材料であ
るシリコンとほぼ同等の熱膨張係数を有しているので、
アイランド部１４に半導体チップを搭載したときの樹脂
封止工程や使用時における熱ストレスによる信頼性低下
を防止できるという利点があるが、外部リード１６等に
おける折曲げ加工が困難であるという欠点がある。一
方、銅合金は、整形性が優れているので、外部リード１
６等における折曲げ加工が容易にできるという利点があ
るが、熱膨張係数がシリコンと大幅に異なるのでアイラ
ンド部１４に半導体チップを搭載したときの樹脂封止工
程や使用時における熱ストレスによりクラックの発生等
の恐れがあるというものであった。The iron-nickel alloy has a coefficient of thermal expansion almost equal to that of silicon, which is a material of the semiconductor element.
There is an advantage that it is possible to prevent deterioration of reliability due to thermal stress during a resin sealing process when a semiconductor chip is mounted on the island portion 14 and during use, but there is a drawback that bending of the external leads 16 is difficult. .. On the other hand, since the copper alloy is excellent in shapeability, the external lead 1
6 has an advantage that it can be easily bent, but since the coefficient of thermal expansion is significantly different from that of silicon, cracks may occur due to thermal stress during the resin sealing process when the semiconductor chip is mounted on the island portion 14 and during use. There was a fear of occurrence.
【０００５】[0005]
【発明が解決しようとする課題】上述した従来のリード
フレームは、要求特性が異なるアイランド部と内部ある
いは外部リード部とに対し、同一の金属材料を用いてい
たため、アイランド部の要求特性であるシリコンと同等
の年膨張係数を満足するものを用いると、リード部の折
曲げ加工が困難となり、整形性の良いものを用いると、
半導体チップに対する熱ストレスによる信頼性低下が発
生するという欠点があった。In the above-mentioned conventional lead frame, the same metal material is used for the island portion and the internal or external lead portions having different required characteristics, and therefore, the silicon having the required characteristic of the island portion is used. If the one that satisfies the annual expansion coefficient equivalent to is used, it becomes difficult to bend the lead part, and if the one with good formability is used,
There is a drawback that reliability is reduced due to thermal stress on the semiconductor chip.
【０００６】[0006]
【課題を解決するための手段】本発明のリードフレーム
は、半導体素子の材料とほぼ同様な熱膨張係数を有する
第一の金属材料から成るアイランド部と、整形性の良好
な第二の金属材料から成る内部リードおよび外部リード
とを備えて構成されている。The lead frame of the present invention comprises an island portion made of a first metal material having a thermal expansion coefficient substantially similar to that of the semiconductor element, and a second metal material having a good shaping property. And an internal lead and an external lead.
【０００７】[0007]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.
【０００８】図１は本発明のリードフレームの一実施例
を示す模式断面図である。FIG. 1 is a schematic sectional view showing an embodiment of the lead frame of the present invention.
【０００９】本実施例のリードフレームは、図１に示す
ように、半導体チップ２を搭載するアイランド部１１
と、半導体チップ２とボンディングワイヤ３で接続され
た封止樹脂４の内部の内部リード１２と、外部接続用の
外部リード１３とを備えて構成されている。As shown in FIG. 1, the lead frame of this embodiment has an island portion 11 on which a semiconductor chip 2 is mounted.
And an internal lead 12 inside the sealing resin 4 connected to the semiconductor chip 2 by the bonding wire 3 and an external lead 13 for external connection.
【００１０】アイランド部１１は、シリコンとほぼ同等
の熱膨張係数を有するニッケル４２％の鉄ニッケル合金
により形成されている。内部リード１２と外部リード１
３とは、整形性がよい銅合金により形成されている。The island portion 11 is formed of a 42% nickel iron-nickel alloy having a thermal expansion coefficient substantially equal to that of silicon. Internal lead 12 and external lead 1
3 is formed of a copper alloy having a good shaping property.
【００１１】このような構成とすることにより、アイラ
ンド部１１と半導体チップ２との熱膨張係数の差による
熱ストレスの発生を防止し、半導体チップ２のクラック
発生等の事故を防止することができるとともに、外部リ
ードの曲げ加工が容易なリードフレームを実現すること
ができる。With such a structure, it is possible to prevent the occurrence of thermal stress due to the difference in thermal expansion coefficient between the island portion 11 and the semiconductor chip 2, and prevent accidents such as cracks in the semiconductor chip 2. At the same time, it is possible to realize a lead frame in which bending of the external leads is easy.
【００１２】図２は、本実施例のリードフレームの製造
方法の一例を示す図である。FIG. 2 is a diagram showing an example of a method of manufacturing the lead frame of this embodiment.
【００１３】帯状の銅合金板５のアイランド部１１を形
成する位置にニッケル４２％の鉄ニッケル合金板６を張
合わせた板材のプレス打抜き加工またはエッチング加工
により容易に形成することが可能である。The strip-shaped copper alloy plate 5 can be easily formed by press punching or etching a plate material in which the iron-nickel alloy plate 6 of 42% nickel is attached to the position where the island portion 11 is formed.
【００１４】[0014]
【発明の効果】以上説明したように、本発明のリードフ
レームは、アイランド部を半導体素子の材料とほぼ同様
な熱膨張係数の金属材料で形成し、内部リードおよび外
部リードを整形性の良好な金属材料で形成しているの
で、アイランド部に搭載する半導体チップの熱ストレス
に対する高信頼度化を実現するとともに、外部リードの
曲げ加工が容易なリードフレームを実現することができ
るという効果がある。As described above, in the lead frame of the present invention, the island portion is formed of a metal material having a thermal expansion coefficient substantially similar to that of the semiconductor element material, and the inner lead and the outer lead have good shaping characteristics. Since it is formed of a metal material, there is an effect that it is possible to realize a highly reliable semiconductor chip mounted on the island portion against thermal stress and to realize a lead frame in which the external leads can be easily bent.
【図１】本発明のリードフレームの一実施例を示す模式
断面図である。FIG. 1 is a schematic cross-sectional view showing an embodiment of a lead frame of the present invention.
【図２】本実施例のリードフレームの製造法の一例を示
す図である。FIG. 2 is a diagram showing an example of a method for manufacturing the lead frame of the present embodiment.
【図３】従来のリードフレームの一例を示す模式断面図
である。FIG. 3 is a schematic cross-sectional view showing an example of a conventional lead frame.
２ 半導体チップ ３ ボンディングワイヤ ４ 封止樹脂 １１，１４ アイランド部 １２，１５ 内部リード １３，１６ 外部リード 2 Semiconductor chip 3 Bonding wire 4 Sealing resin 11,14 Island part 12,15 Internal lead 13,16 External lead
Claims (2)
を有する第一の金属材料から成るアイランド部と、 整形性の良好な第二の金属材料から成る内部リードおよ
び外部リードとを備えることを特徴とするリードフレー
ム。1. An island portion made of a first metal material having a thermal expansion coefficient substantially similar to that of a semiconductor element material, and an inner lead and an outer lead made of a second metal material having a good shaping property. Lead frame characterized by.
含む鉄ニッケル合金であり、前記第二の合金が銅合金で
あることを特徴とする請求項１記載のリードフレーム。2. The first metal material contains 42% nickel.
The lead frame according to claim 1, wherein the lead frame is an iron-nickel alloy containing the second alloy is a copper alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11865192A JPH05315528A (en) | 1992-05-12 | 1992-05-12 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11865192A JPH05315528A (en) | 1992-05-12 | 1992-05-12 | Lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05315528A true JPH05315528A (en) | 1993-11-26 |
Family
ID=14741841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11865192A Pending JPH05315528A (en) | 1992-05-12 | 1992-05-12 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05315528A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8125063B2 (en) * | 2010-03-08 | 2012-02-28 | Powertech Technology, Inc. | COL package having small chip hidden between leads |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62213270A (en) * | 1986-03-14 | 1987-09-19 | Sumitomo Electric Ind Ltd | Lead frame for semiconductor device |
| JPH02152267A (en) * | 1988-12-02 | 1990-06-12 | Hitachi Cable Ltd | Lead frame parallel-connected by cu alloy/fe-ni alloy |
| JPH03290957A (en) * | 1990-04-06 | 1991-12-20 | Sumitomo Special Metals Co Ltd | Lead frame material for plastic package |
-
1992
- 1992-05-12 JP JP11865192A patent/JPH05315528A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62213270A (en) * | 1986-03-14 | 1987-09-19 | Sumitomo Electric Ind Ltd | Lead frame for semiconductor device |
| JPH02152267A (en) * | 1988-12-02 | 1990-06-12 | Hitachi Cable Ltd | Lead frame parallel-connected by cu alloy/fe-ni alloy |
| JPH03290957A (en) * | 1990-04-06 | 1991-12-20 | Sumitomo Special Metals Co Ltd | Lead frame material for plastic package |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8125063B2 (en) * | 2010-03-08 | 2012-02-28 | Powertech Technology, Inc. | COL package having small chip hidden between leads |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19971111 |