JPH0215201A - Solid-state image pickup element - Google Patents
Solid-state image pickup elementInfo
- Publication number
- JPH0215201A JPH0215201A JP1107618A JP10761889A JPH0215201A JP H0215201 A JPH0215201 A JP H0215201A JP 1107618 A JP1107618 A JP 1107618A JP 10761889 A JP10761889 A JP 10761889A JP H0215201 A JPH0215201 A JP H0215201A
- Authority
- JP
- Japan
- Prior art keywords
- color
- parts
- layer
- radiation
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 claims abstract description 27
- 239000002861 polymer material Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000003595 spectral effect Effects 0.000 claims abstract description 7
- 229920000620 organic polymer Polymers 0.000 claims description 19
- 238000000926 separation method Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 27
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000001681 protective effect Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 6
- 238000004043 dyeing Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- -1 Poly-alkyl methacrylate Chemical compound 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QCVGEOXPDFCNHA-UHFFFAOYSA-N 5,5-dimethyl-2,4-dioxo-1,3-oxazolidine-3-carboxamide Chemical compound CC1(C)OC(=O)N(C(N)=O)C1=O QCVGEOXPDFCNHA-UHFFFAOYSA-N 0.000 description 1
- LWOXJAMHQRLYRT-UHFFFAOYSA-N CCC=C=S=O Chemical compound CCC=C=S=O LWOXJAMHQRLYRT-UHFFFAOYSA-N 0.000 description 1
- 102000002322 Egg Proteins Human genes 0.000 description 1
- 108010000912 Egg Proteins Proteins 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000014103 egg white Nutrition 0.000 description 1
- 210000000969 egg white Anatomy 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000011120 plywood Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Landscapes
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Abstract
Description
【発明の詳細な説明】 【発明の利用分野1 本発明は固体撮像素子しこ関する。[Detailed description of the invention] [Field of application of the invention 1 The present invention relates to a solid-state image sensor.
本発明は特に光検知部上に直接色分解フィルターを搭載
するカラー用固体撮像素子に有用である。The present invention is particularly useful for a color solid-state image sensor in which a color separation filter is mounted directly on a photodetector.
[発明の背景]
従来、固体撮像素子と色分解フィルターを個別に製造し
ておき、両者を位置合せしつつ光学用接着剤等で貼合せ
るのが一般的な製造方法である。[Background of the Invention] Conventionally, a common manufacturing method is to manufacture a solid-state image sensor and a color separation filter separately, and then bond them together using an optical adhesive or the like while aligning the two.
また光学用接着剤のかわりに光学用マツチング・オイル
を用いる例も報告されている。There have also been reports of using optical matching oil instead of optical adhesive.
また、多色光学フィルターの製造方法について、特開昭
53−99822号公報に、色分解フィルターの製造方
法について、特開昭50=14、7823号公報に開示
されているが、固体撮像素子にフィルターを直接設ける
ことは何ら記載されていない。Furthermore, a method for manufacturing a polychromatic optical filter is disclosed in Japanese Patent Application Laid-open No. 53-99822, and a method for manufacturing a color separation filter is disclosed in Japanese Patent Application Laid-Open No. 14-7823. There is no mention of directly providing a filter.
更に、カラーイメージングデバイスおよびその製造方法
について、特開昭53−4.7282号公報に開示され
ているが放射線感応性材料については、全く記載がない
。Further, although a color imaging device and a method for manufacturing the same are disclosed in Japanese Patent Application Laid-Open No. 53-47282, there is no mention of radiation-sensitive materials at all.
尚、被複層組成物について、特開昭50−834.25
号公報に開示があり、当該公報中で放射線感応性材料に
ついて記載されているがこれらは、容器や、合板に関す
る技術にすぎないものである。Regarding the multilayer composition, Japanese Patent Application Laid-Open No. 50-834.25
Although the publication discloses radiation-sensitive materials in the publication, these are merely techniques related to containers and plywood.
【発明の目的]
本発明の第1の目的は、固体撮像素子の光検知部上に直
接色分解フィルターを搭載し、素子製造の作業性を向上
させることにある。[Object of the Invention] A first object of the present invention is to mount a color separation filter directly on the light detection section of a solid-state image sensor, thereby improving the workability of manufacturing the device.
本発明の第2の目的はこの場合の色分解フィルターを十
分精度良く、高品位になすことにある。A second object of the present invention is to make the color separation filter in this case sufficiently accurate and of high quality.
[発明の概要1
本発明は色分解フィルターを構成するいわゆる中間層や
保護層を放射線感応性有機高分子材料を用い、固体撮像
素子のその後の製造工程に有利ならしめることに第1の
要点がある。[Summary of the Invention 1 The first point of the present invention is to use a radiation-sensitive organic polymer material for the so-called intermediate layer and protective layer constituting the color separation filter, which is advantageous for the subsequent manufacturing process of the solid-state image sensor. be.
第2は、更に前述の有機高分子材料が熱架橋性なる特性
を有することがより好ましい。これは色分解フィルター
の積層構造に用いる中間層等の強化に有用である。Second, it is more preferable that the organic polymer material described above has thermal crosslinkability. This is useful for strengthening intermediate layers used in the laminated structure of color separation filters.
第3に、前記放射線感応性有機高分子材料がいわゆるポ
ジ型であることが、工程簡略化の点から極めて有利であ
る。ネガ型の放射線感応性を有していてもフィルター部
の加工にこの特性を使用し得る。しかし、各中間層を形
成と共に、所定の放射線を露光し架橋を施こす必要が生
じ、工程数が多くなる。勿論ポジ型の放射線感応性有機
高分子材料を用いても、上記各中間層を形成と共に所定
の放射線を露光し、次いで現像して所望の加工を施して
良いし、又複数層毎上述の加工を施して良いことは当然
である。各層毎に加工を行なった場合、工程数としては
ネガ型の場合と同じ工程数となる。しかし、この場合で
もポジ型の方が次の如き利点を有する。即ち、ポジ型の
場合、有機高分子材料の層を除去する部位に放射線を露
光するが、一方、ネガ型の場合、残存させる部位に放射
線を露光する。色分解フィルター母材を有するのは当然
前記有機高分子材料の層が残存せしめられる部位となる
。従って、ネガ型の場合1色分解フィルター母材にも何
度か露光用の放射線が照射されることとなり、フィルタ
ー特性の劣化に影響をおよぼす。ポジ型においてはこの
様な案影響は全くない。Thirdly, it is extremely advantageous for the radiation-sensitive organic polymer material to be of a so-called positive type in terms of process simplification. Even if it has negative radiation sensitivity, this property can be used for processing the filter part. However, as each intermediate layer is formed, it becomes necessary to perform crosslinking by exposing to a predetermined radiation, which increases the number of steps. Of course, even if a positive radiation-sensitive organic polymer material is used, each of the intermediate layers described above may be formed and exposed to a predetermined radiation, and then developed and subjected to the desired processing. Of course, it is okay to do so. When each layer is processed, the number of steps is the same as in the case of negative molding. However, even in this case, the positive type has the following advantages. That is, in the case of a positive type, a portion of the organic polymer material layer to be removed is exposed to radiation, whereas in the case of a negative type, a portion of the organic polymer material to be left is exposed to radiation. Naturally, the color separation filter matrix is the part where the layer of the organic polymer material remains. Therefore, in the case of a negative type, the base material of the one-color separation filter is also irradiated with exposure radiation several times, which affects the deterioration of the filter characteristics. In the case of positive type, there is no such influence at all.
また、多くの場合1.フィルター母材にも感光性を付与
して用いるが、この場合フィルター母材の感光特性と、
中間層および保護層の材料の光分特性が異なっているの
が好ましい。フィルター母材の加工時に、その下部に存
在する中間層および保護層の材料に影響を及ぼさない必
要がある。Also, in many cases 1. The filter base material is also used by imparting photosensitivity, but in this case, the photosensitivity characteristics of the filter base material and
Preferably, the materials of the intermediate layer and the protective layer have different optical properties. When processing the filter base material, it is necessary not to affect the materials of the intermediate layer and protective layer that exist below it.
本発明に用いるに有用な放射線感応性有機高分子材料は
次の如きのものが掲げられる。The radiation-sensitive organic polymer materials useful in the present invention include the following.
(1)ポリ・アルキル・メタクリレート又はその共重合
体
CH3
(−CH2−C−)−1
C○○R
但し、
Rはアルキル基、
例えば、
CH3゜
4H9
一
ポリグリシジル・メタクリレート又はその共重合体
CH3
一+CI(2−〇+n
咲
CH。(1) Poly-alkyl methacrylate or copolymer thereof CH3 (-CH2-C-)-1 C○○R However, R is an alkyl group, for example, CH3゜4H9 - Polyglycidyl methacrylate or copolymer thereof CH3 1+CI(2-〇+n Saki CH.
奮 CH2−C−)−0 0NH2 ポリメチルイソプロペニルケトン CH3 CH2−C+。Strive CH2-C-)-0 0NH2 polymethyl isopropenyl ketone CH3 CH2-C+.
COCH3 ポリ (ブテン 1スルホン) + CH。COCH3 Poly (Butene 1 sulfone) + CH.
CH) (SO2) 十n CH2 CI(。CH) (SO2) tenn CH2 CI(.
ポリイソブチレン
CH3
+CT(2−C−)−n
CH3
これらの例以外の放射線感応性有機高分子材料を使用し
得ることはいうまでもない。勿論、放射線感応性有機高
分子材料として紫外線感応性、電子線感応性、X線感応
性等のものを使用し得る。Polyisobutylene CH3 +CT(2-C-)-n CH3 It goes without saying that radiation-sensitive organic polymeric materials other than these examples can be used. Of course, as the radiation-sensitive organic polymer material, those sensitive to ultraviolet rays, electron beams, X-rays, etc. can be used.
本明細書の「放射線感応性」なる用語はこれら各種のも
のを含むものである。As used herein, the term "radiation sensitivity" includes these various types.
[発明の実施例] 以下、本発明を具体例に従って詳細に説明する。[Embodiments of the invention] Hereinafter, the present invention will be explained in detail according to specific examples.
第1図から第4図までは本発明のカラー用固体撮像素子
の製造工程を示す。いずれも素子の主要部の断面図であ
る。第5図はその平面図である。1 to 4 show the manufacturing process of the color solid-state image sensing device of the present invention. Both are cross-sectional views of the main parts of the elements. FIG. 5 is a plan view thereof.
カラー用固体撮像素子基板1には多数の光検知部10お
よびこれらを駆動する暉動回路部1]が少なくとも形成
されている。なお、半導体基板1中の詳細な構造は省略
されている。一般に基板1はシリコンで作製されている
。光検知部は、これを動作させるための周辺回路を形づ
くる半導体集積回路と同一基板で作られる場合と、別種
の半導体材料を用いる場合などがある。At least a large number of photodetecting sections 10 and a perturbation circuit section 1 for driving them are formed on the color solid-state image sensor substrate 1. Note that the detailed structure in the semiconductor substrate 1 is omitted. Generally, the substrate 1 is made of silicon. The photodetector may be made of the same substrate as the semiconductor integrated circuit that forms the peripheral circuitry for operating the photodetector, or may be made of a different type of semiconductor material.
こうしたカラー用固体撮像素子基板」二に色分解フィル
ターの母材の層を厚さ0.5〜2゜5μm程度形成する
。この母材は一般にゼラチン、卵白。On the second substrate of such a color solid-state image sensor, a layer of a base material of a color separation filter is formed to a thickness of about 0.5 to 2.5 μm. This matrix is generally gelatin or egg white.
グリ−、カゼインおよびポバール等に感光性を与えた材
料が用いられる。感光特性としてはネガ型を用い365
nmないし435nmに感度を持たせるのが一般的であ
る。Materials such as green, casein, and poval that have been imparted with photosensitivity are used. The photosensitive characteristics are 365 using negative type.
It is common to have sensitivity in the nm to 435 nm range.
この層にマスク露光法で第1色目の部分2だけ光硬化さ
せ現像することによって、色分解フィルター母材の部分
2だけが残される。この部分に所定の分光特性を有する
染料で染色する。なお、染色法を従来から行なわれてい
る染料水溶液を用いる方法で良い。By photo-curing only the first color portion 2 of this layer using a mask exposure method and developing it, only the portion 2 of the color separation filter base material remains. This area is dyed with a dye having predetermined spectral characteristics. Note that the dyeing method may be a conventional method using an aqueous dye solution.
なお、この第1色目のフィルター母材の層を形成する際
、基板1の表面に約0.5〜1μmの厚さに有機高分子
材料の被膜を形成しておくのが好ましい。この有機高分
子材料の被膜によって基板表面がより平坦化される。こ
れによって次の様な利点を生ずる。In addition, when forming the layer of the filter base material of the first color, it is preferable to form a film of an organic polymer material on the surface of the substrate 1 to a thickness of about 0.5 to 1 μm. The surface of the substrate is further planarized by this coating of organic polymer material. This brings about the following advantages.
(1)基板1中に設けられた半導体装置部分に対し、不
純物等の汚染の保護効果が生ずる。(1) The semiconductor device portion provided in the substrate 1 is protected from contamination such as impurities.
(2)基板1の表面が平坦化され、この上部に形成され
る中間層、フィルター母相の層等の形成が容易になると
共に、特に中間層の変形に伴ない生ずる染色時の混色を
防止することが出来る。(2) The surface of the substrate 1 is flattened, making it easier to form the intermediate layer, filter matrix layer, etc. formed on the top thereof, and preventing color mixture during dyeing, which occurs especially due to deformation of the intermediate layer. You can.
(3)色フィルターの加工工程で、不純物の付着面積が
小さくなり、基板中の半導体装置の汚染防止に有用であ
る。(3) In the color filter processing process, the adhesion area of impurities is reduced, which is useful for preventing contamination of semiconductor devices in the substrate.
なお、この有機高分子材料も前述の中間層等を形成する
ための放射線感応性有機高分子材料を用いるのが、後の
加工に有利である。Note that it is advantageous for later processing to use a radiation-sensitive organic polymer material for forming the above-mentioned intermediate layer and the like as the organic polymer material.
次いで透明な耐染色性の中間層5を厚さ0.5〜1.5
μmに被覆する。第1図かこの状態である。この中間層
に前述の放射線感応性有機高分子材料を用いる。この場
合、色分解フィルター母材の感光特性と異なる放射線感
応特性を有する如く選択するのが良いことは前述した。Next, a transparent dye-resistant intermediate layer 5 is formed to a thickness of 0.5 to 1.5 mm.
Coat to μm. This is the state shown in Figure 1. The aforementioned radiation-sensitive organic polymer material is used for this intermediate layer. In this case, as described above, it is preferable to select a material having radiation sensitivity characteristics different from those of the color separation filter base material.
次に、同様に第2図に示す様に色フィルター母材の層を
形成し、マスク露光法で露光し、現像を施こし、第2色
目のフィルター部分3を形成、所定の分光特性を有する
染料で染色する。更に透明な中間層6を被覆する。Next, as shown in FIG. 2, a layer of color filter base material is formed, exposed using a mask exposure method, and developed to form a second color filter portion 3, which has predetermined spectral characteristics. Dye with dye. Furthermore, a transparent intermediate layer 6 is coated.
さらに同様に第3図に示すように色フイルタ−4を形成
し、染色し、次いで保護膜7を形成する。Furthermore, as shown in FIG. 3, a color filter 4 is formed and dyed, and then a protective film 7 is formed.
なお、中間M6.保護膜7も中間層5と同様の放射線感
応性有機高分子材料を用いる。In addition, intermediate M6. The protective film 7 also uses the same radiation-sensitive organic polymer material as the intermediate layer 5.
以上の工程で3色の色分解フィルターが形成される。Through the above steps, three color separation filters are formed.
なお、色フィルター形成のための染色は従来法に従って
、染料の調合、コンテント、染色液の温度、染色時間を
決めれば良い。Note that dyeing for forming a color filter may be performed by determining the dye preparation, content, temperature of the dye solution, and dyeing time according to conventional methods.
第1表にフィルター母材および中間層および保護層の具
体例を示す。Table 1 shows specific examples of the filter base material, intermediate layer, and protective layer.
また、染色条件の例を次に示す。Further, examples of staining conditions are shown below.
(1)染料配合 緑色 青色 赤色 染色温度。(1) Dye formulation green blue red Dyeing temperature.
時間 緑 色 40’C。time green color 40'C.
2分 青 色 40°C2 1分 赤 色 40℃。2 minutes blue color 40°C2 1 minute red color 40℃.
2分
前述した放射線感応性材料のなかで、たとえばポリグリ
シジルメタクリレート、ポリメチルメタクリルアミドお
よびポリメチルメタクリレートとの共重合体に属するポ
リメチルメタクリレート−メタクリロイルクロリド共重
合体は熱架橋性の材料である。Among the radiation-sensitive materials mentioned above, for example polymethyl methacrylate-methacryloyl chloride copolymers, which belong to polyglycidyl methacrylate, polymethyl methacrylamide and copolymers with polymethyl methacrylate, are thermally crosslinkable materials.
このような材料の場合、中間層を塗布した後、熱架橋を
生ずる程度の温度で加熱することによって、中間層の耐
水性は向上し、耐染色層としてより有効に作用する。In the case of such materials, by heating the intermediate layer at a temperature that causes thermal crosslinking after coating, the intermediate layer improves its water resistance and functions more effectively as a dye-resistant layer.
加熱温度および時間は各々200℃15分間程度行なえ
ば架橋による高分子化は相当程度進行し、前記の耐水性
等の向上が生じる。If the heating temperature and time are 200° C. for about 15 minutes, polymerization due to crosslinking will proceed to a considerable extent, resulting in the above-mentioned improvement in water resistance, etc.
この加熱処理は各中間層等の形成後行なわれるのが通常
である。This heat treatment is usually performed after forming each intermediate layer and the like.
カラー用固体撮像素子基板1のボンディング・バット部
分12等の所望部分を残してマスクを施こし、紫外線を
露光する。露光条件は第1表に示した通りである。光源
として遠紫外線の場合、X e −Hgランプ(IKW
)が連間である。次いてフィルター形成用の31Gの積
層材料を現像することによって、所望部分を除去する。A mask is applied leaving desired portions of the color solid-state image sensor substrate 1, such as the bonding butt portion 12, and exposed to ultraviolet light. The exposure conditions are as shown in Table 1. If far ultraviolet light is used as the light source, an X e -Hg lamp (IKW
) is a renma. Next, the desired portion is removed by developing the 31G laminated material for filter formation.
こうしてボンディング・パット部等所望部分が開孔され
る。In this way, desired portions such as bonding pad portions are opened.
第5図はカラー用固体撮像素子の平面図である。FIG. 5 is a plan view of the color solid-state image sensor.
シリコンチップ基板内に図のように光検知部14と光検
知部を叩動する回路15およびボンティング部12が配
置されている。光検知部には前記の方法によりモザイク
状等の色フィルターが形成されている。ボンディング部
のフィルター材は前記の方法で除去し、ボンディング・
バットは露出させである。次にAu、又はAQ−8i
(Sj含有量0.5〜1111t%)をボンディング・
パッドに超音波ボンドする。あるいはAu−8i(Au
含有量10wt%)をAu製ボンディング・パッドに熱
圧着でも良い。As shown in the figure, a photodetection section 14, a circuit 15 for driving the photodetection section, and a bonding section 12 are arranged in a silicon chip substrate. A color filter, such as a mosaic pattern, is formed in the light detection section by the method described above. Remove the filter material in the bonding area using the method described above, and then remove the filter material from the bonding area.
The bat is exposed. Next, Au or AQ-8i
(Sj content 0.5-1111t%)
Ultrasonic bond to the pad. Or Au-8i (Au
(content 10 wt%) may be thermocompression bonded to an Au bonding pad.
こうしてカラー用固体撮像素子が完成する。In this way, a color solid-state image sensor is completed.
以上の具体例では、放射線感応性材料層に対するボンデ
ィング・パラIへ部12等の加工は、(1)半導体基板
1表面に形成した被膜、(2)各中間層、および(3)
保護膜等を積層して後加工処理を施しているが、勿論各
層修行なっても良いし、又たとえば二層毎に加工しても
良いことはいうまでもない。In the above specific example, processing of the bonding para I part 12 and the like for the radiation-sensitive material layer includes (1) the coating formed on the surface of the semiconductor substrate 1, (2) each intermediate layer, and (3)
Although a protective film and the like are laminated and post-processing is performed, it goes without saying that each layer may be processed or, for example, every two layers may be processed.
【発明の効果]
本発明によれば、固体撮像素子上に直接色分解フィルタ
ーを搭載でき、素子製造の作業性を向上させることがで
きる。[Effects of the Invention] According to the present invention, a color separation filter can be directly mounted on a solid-state image sensor, and workability in manufacturing the device can be improved.
更に、色分解フィルターを精度良く、高品位に設けるこ
とができる。Furthermore, color separation filters can be provided with high precision and high quality.
第1図より第4図は本発明のカラー用固体撮像素子の製
造方法を示す素子断面図、第5図はカラー用固体撮像素
子の平面図である。
1・・・固体撮像素子基板、2,3.4・・・色フィル
ター部、5,6・・中間層、7・・保護膜。1 to 4 are sectional views of the color solid-state image sensing device according to the present invention, and FIG. 5 is a plan view of the color solid-state image sensing device. DESCRIPTION OF SYMBOLS 1... Solid-state image sensor board, 2, 3. 4... Color filter part, 5, 6... Intermediate layer, 7... Protective film.
Claims (1)
とを少なくとも有する半導体基板上部に色分解用フィル
ター部が設けられ、前記色分解用フィルター部は所望形
状且所定の分光特性を有するフィルター層および透光性
の放射線感応性有機高分子材料層が所定の数だけ順次積
層されてなり、上記フィルタ層と上記放射線感応性有機
高分子材料層とは互いに異なる分光特性を有し、且上記
放射線感応性有機高分子材料層を局部的に除去した領域
を通して施こされた配線を少なくとも有することを特徴
とする固体撮像素子。 2、上記放射線感応性有機高分子材料層がポジ型の放射
線感応性を有することを特徴とする特許請求の範囲第1
項記載の固体撮像素子。[Claims] 1. A color separation filter section is provided on an upper part of a semiconductor substrate having at least a photodetection section in which a plurality of photodetection elements are arranged and a wiring section, and the color separation filter section has a desired shape. A predetermined number of filter layers having predetermined spectral characteristics and transparent radiation-sensitive organic polymer material layers are sequentially laminated, and the filter layer and the radiation-sensitive organic polymer material layer are different from each other. What is claimed is: 1. A solid-state imaging device having spectral characteristics and having at least wiring provided through a region where the radiation-sensitive organic polymer material layer is locally removed. 2. Claim 1, wherein the radiation-sensitive organic polymer material layer has positive radiation sensitivity.
The solid-state image sensor described in .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1107618A JPH0215201A (en) | 1989-04-28 | 1989-04-28 | Solid-state image pickup element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1107618A JPH0215201A (en) | 1989-04-28 | 1989-04-28 | Solid-state image pickup element |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60082351A Division JPS60258962A (en) | 1985-04-19 | 1985-04-19 | Solid-state image pickup element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0215201A true JPH0215201A (en) | 1990-01-18 |
JPH0582561B2 JPH0582561B2 (en) | 1993-11-19 |
Family
ID=14463742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1107618A Granted JPH0215201A (en) | 1989-04-28 | 1989-04-28 | Solid-state image pickup element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0215201A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006085528A1 (en) * | 2005-02-10 | 2006-08-17 | Toppan Printing Co., Ltd. | Solid-state imaging device and method for manufacturing same |
JP2006222291A (en) * | 2005-02-10 | 2006-08-24 | Toppan Printing Co Ltd | Solid-state imaging element and its fabrication process |
JP2006222290A (en) * | 2005-02-10 | 2006-08-24 | Toppan Printing Co Ltd | Solid-state imaging element and its manufacturing process |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6082351A (en) * | 1983-10-13 | 1985-05-10 | ユニチカ株式会社 | Polyester laminated jfilm and manufacture thereof |
JPS60258952A (en) * | 1984-06-05 | 1985-12-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory device |
-
1989
- 1989-04-28 JP JP1107618A patent/JPH0215201A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6082351A (en) * | 1983-10-13 | 1985-05-10 | ユニチカ株式会社 | Polyester laminated jfilm and manufacture thereof |
JPS60258952A (en) * | 1984-06-05 | 1985-12-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006085528A1 (en) * | 2005-02-10 | 2006-08-17 | Toppan Printing Co., Ltd. | Solid-state imaging device and method for manufacturing same |
JP2006222291A (en) * | 2005-02-10 | 2006-08-24 | Toppan Printing Co Ltd | Solid-state imaging element and its fabrication process |
JP2006222290A (en) * | 2005-02-10 | 2006-08-24 | Toppan Printing Co Ltd | Solid-state imaging element and its manufacturing process |
US7932122B2 (en) | 2005-02-10 | 2011-04-26 | Toppan Printing Co., Ltd. | Manufacturing method for solid state image pickup device |
US8097485B2 (en) | 2005-02-10 | 2012-01-17 | Toppan Printing Co., Ltd. | Solid state image pickup device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH0582561B2 (en) | 1993-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6046401B2 (en) | Manufacturing method of solid-state image sensor | |
US4827118A (en) | Light-sensitive device having color filter and manufacturing method thereof | |
US4418284A (en) | Solid-state color-image sensor and process for fabricating the same | |
JPH0215201A (en) | Solid-state image pickup element | |
JPH0624232B2 (en) | Method of manufacturing solid-state imaging device | |
JPH0235282B2 (en) | ||
JP2004031532A (en) | Manufacturing method of solid-state image sensing device | |
JPH03190169A (en) | Solid-state image sensing device and manufacture thereof | |
JP3158466B2 (en) | Method for manufacturing solid-state imaging device | |
JPS597317A (en) | Multicolor optical filter and its manufacture | |
JPS60258962A (en) | Solid-state image pickup element | |
JPH06289217A (en) | Color solid state image pickup device and its production | |
JPH027041B2 (en) | ||
JPH03190168A (en) | Manufacture of solid-state image sensing device | |
JPS6041004A (en) | Solid-state image pickup element | |
JP2614064B2 (en) | Solid color image sensor | |
JPS5898959A (en) | Color solid state image pickup element and manufacture thereof | |
JPS62264005A (en) | Production of high precision color filter | |
KR830001454B1 (en) | Solid-state Imaging Device for Color | |
JPS5917512A (en) | Production of color filter | |
JPS58154808A (en) | Color filter | |
JPS60261278A (en) | Color solid-state image pickup element | |
KR950007342B1 (en) | Method of manufacturing color filter | |
JPS6382325A (en) | Light receiving element | |
JPH0444266A (en) | Formation of microlens of solid-state image sensing element |