JPH0214781B2 - - Google Patents

Info

Publication number
JPH0214781B2
JPH0214781B2 JP55148399A JP14839980A JPH0214781B2 JP H0214781 B2 JPH0214781 B2 JP H0214781B2 JP 55148399 A JP55148399 A JP 55148399A JP 14839980 A JP14839980 A JP 14839980A JP H0214781 B2 JPH0214781 B2 JP H0214781B2
Authority
JP
Japan
Prior art keywords
layer
impurity concentration
island region
thyristor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55148399A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5772345A (en
Inventor
Toshikatsu Shirasawa
Shigeru Takahashi
Kyoshi Tsukuda
Yoshikazu Hosokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55148399A priority Critical patent/JPS5772345A/ja
Publication of JPS5772345A publication Critical patent/JPS5772345A/ja
Publication of JPH0214781B2 publication Critical patent/JPH0214781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W15/00—
    • H10W15/01—

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP55148399A 1980-10-24 1980-10-24 Semiconductor integrated circuit Granted JPS5772345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148399A JPS5772345A (en) 1980-10-24 1980-10-24 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148399A JPS5772345A (en) 1980-10-24 1980-10-24 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5772345A JPS5772345A (en) 1982-05-06
JPH0214781B2 true JPH0214781B2 (enExample) 1990-04-10

Family

ID=15451908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148399A Granted JPS5772345A (en) 1980-10-24 1980-10-24 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5772345A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0397880U (enExample) * 1990-01-26 1991-10-09

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4963026B2 (ja) * 2006-01-26 2012-06-27 株式会社豊田中央研究所 静電気保護用半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0397880U (enExample) * 1990-01-26 1991-10-09

Also Published As

Publication number Publication date
JPS5772345A (en) 1982-05-06

Similar Documents

Publication Publication Date Title
EP0182032B1 (en) SoI semiconductor device and method for producing it
US4044373A (en) IGFET with gate protection diode and antiparasitic isolation means
JP2689047B2 (ja) 絶縁ゲート型バイポーラトランジスタとその製造方法
US3934159A (en) Semiconductor circuit devices using insulated gate-type field effect elements having protective diodes
EP0615286B1 (en) Semiconductor device provided with isolation region
EP0011443B1 (en) Semiconductor integrated circuit device
EP0615287B1 (en) Dielectric isolated bipolar transistor
US4051506A (en) Complementary semiconductor device
JPS60194558A (ja) 半導体装置の製造方法
GB2060252A (en) Mutually isolated complementary semiconductor elements
JPH0123949B2 (enExample)
US4047220A (en) Bipolar transistor structure having low saturation resistance
US4901124A (en) Conductivity modulated MOSFET
EP0064613B1 (en) Semiconductor device having a plurality of element units operable in parallel
JPH05235014A (ja) 半導体装置
JPH0214781B2 (enExample)
EP0592084B1 (en) Process for fabricating a retrograde nwell cathode Schottky transistor and fabrication process
JPS6352464B2 (enExample)
JP2802459B2 (ja) フォト・トライアック
JPS6352465B2 (enExample)
JP2860089B2 (ja) 高耐圧半導体素子
US3647580A (en) Method for the manufacture of a solid state circuit adaptable as h.f. tuner
JPH02202061A (ja) 逆導通ゲートターンオフサイリスタ
JPS6145395B2 (enExample)
JP3128958B2 (ja) 半導体集積回路