JPH0214320B2 - - Google Patents

Info

Publication number
JPH0214320B2
JPH0214320B2 JP57168455A JP16845582A JPH0214320B2 JP H0214320 B2 JPH0214320 B2 JP H0214320B2 JP 57168455 A JP57168455 A JP 57168455A JP 16845582 A JP16845582 A JP 16845582A JP H0214320 B2 JPH0214320 B2 JP H0214320B2
Authority
JP
Japan
Prior art keywords
substrate
melt
crystal growth
inp
atmosphere containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57168455A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5957999A (ja
Inventor
Kazuo Sakai
Shigeyuki Akiba
Katsuyuki Uko
Juichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP16845582A priority Critical patent/JPS5957999A/ja
Publication of JPS5957999A publication Critical patent/JPS5957999A/ja
Publication of JPH0214320B2 publication Critical patent/JPH0214320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP16845582A 1982-09-29 1982-09-29 結晶成長方法 Granted JPS5957999A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16845582A JPS5957999A (ja) 1982-09-29 1982-09-29 結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16845582A JPS5957999A (ja) 1982-09-29 1982-09-29 結晶成長方法

Publications (2)

Publication Number Publication Date
JPS5957999A JPS5957999A (ja) 1984-04-03
JPH0214320B2 true JPH0214320B2 (enrdf_load_stackoverflow) 1990-04-06

Family

ID=15868422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16845582A Granted JPS5957999A (ja) 1982-09-29 1982-09-29 結晶成長方法

Country Status (1)

Country Link
JP (1) JPS5957999A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190299A (ja) * 1983-04-07 1984-10-29 Agency Of Ind Science & Technol 燐化インジウム結晶の熱変形防止方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559716A (en) * 1978-10-30 1980-05-06 Nec Corp Liquid phase growing method of 3-5 group compound semiconductor
JPS571888A (en) * 1980-05-31 1982-01-07 Bridgestone Tire Co Ltd Fiber reinforced hose and its manufacture

Also Published As

Publication number Publication date
JPS5957999A (ja) 1984-04-03

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