JPS5957999A - 結晶成長方法 - Google Patents
結晶成長方法Info
- Publication number
- JPS5957999A JPS5957999A JP16845582A JP16845582A JPS5957999A JP S5957999 A JPS5957999 A JP S5957999A JP 16845582 A JP16845582 A JP 16845582A JP 16845582 A JP16845582 A JP 16845582A JP S5957999 A JPS5957999 A JP S5957999A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor pressure
- contg
- crystal growth
- growth method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16845582A JPS5957999A (ja) | 1982-09-29 | 1982-09-29 | 結晶成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16845582A JPS5957999A (ja) | 1982-09-29 | 1982-09-29 | 結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5957999A true JPS5957999A (ja) | 1984-04-03 |
JPH0214320B2 JPH0214320B2 (enrdf_load_stackoverflow) | 1990-04-06 |
Family
ID=15868422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16845582A Granted JPS5957999A (ja) | 1982-09-29 | 1982-09-29 | 結晶成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5957999A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59190299A (ja) * | 1983-04-07 | 1984-10-29 | Agency Of Ind Science & Technol | 燐化インジウム結晶の熱変形防止方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5559716A (en) * | 1978-10-30 | 1980-05-06 | Nec Corp | Liquid phase growing method of 3-5 group compound semiconductor |
JPS571888A (en) * | 1980-05-31 | 1982-01-07 | Bridgestone Tire Co Ltd | Fiber reinforced hose and its manufacture |
-
1982
- 1982-09-29 JP JP16845582A patent/JPS5957999A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5559716A (en) * | 1978-10-30 | 1980-05-06 | Nec Corp | Liquid phase growing method of 3-5 group compound semiconductor |
JPS571888A (en) * | 1980-05-31 | 1982-01-07 | Bridgestone Tire Co Ltd | Fiber reinforced hose and its manufacture |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59190299A (ja) * | 1983-04-07 | 1984-10-29 | Agency Of Ind Science & Technol | 燐化インジウム結晶の熱変形防止方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0214320B2 (enrdf_load_stackoverflow) | 1990-04-06 |
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