JPH021395A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPH021395A
JPH021395A JP63142154A JP14215488A JPH021395A JP H021395 A JPH021395 A JP H021395A JP 63142154 A JP63142154 A JP 63142154A JP 14215488 A JP14215488 A JP 14215488A JP H021395 A JPH021395 A JP H021395A
Authority
JP
Japan
Prior art keywords
electrodes
lead frame
electrode
gap
protective material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63142154A
Other languages
Japanese (ja)
Inventor
Hiroshi Kuroda
黒田 啓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63142154A priority Critical patent/JPH021395A/en
Publication of JPH021395A publication Critical patent/JPH021395A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Credit Cards Or The Like (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent electrodes from being exfoliated due to thermal strain or the like by covering a plurality of the electrodes by an insulating protective member on one side of the electrodes so as to cover at least a gap between the electrodes and also electrode parts adjacent to the gap in an area other than a region in which the electrodes make contact with external terminals. CONSTITUTION:A lead frame 15 is provided with an insulating protective material 14 such as a polyimide resin for covering a plurality of electrodes 11 on one side 12 thereof so as to cover at least a gap between the electrodes 11 and also electrode parts adjacent to the gap in an area other than a region in which the electrodes make contact with external terminals, and an IC 18 is placed on and adhered to the other side 16 of the lead frame 15 by a die- bonding resin 17. The part including the IC 18, the other side 16 of the electrodes 11 and conductor wires 19 is covered by a sealing resin 20, together with the one side 12. Since the area of the gap between the electrodes 11 is covered by the protective material 14, the electrodes 11 are hardly exfoliated from the sealing resin even in the presence of external forces, thermal strain or the like, and reliability of an IC module is enhanced.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は例えばrCカード等に用rられる集積回路装置
(以下ICモジュールと称す)に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an integrated circuit device (hereinafter referred to as an IC module) used, for example, in an RC card or the like.

従来の技術 ボータプルな情報ファイルとしてのICカードは、カー
ドの一部に、メモリー、マイクロプロセッサ−を有する
ICモジュールを埋込んで、リーダーライターを介して
情報を書き込み、読み出し消去する演算機能を持ってい
るが、reカードの厚味ばIs○規格で最大0,84 
ミ!Jと定められており、その厚味を犬きく左右するも
のがICモジュールである。
Conventional technology An IC card as a portable information file has an IC module with memory and a microprocessor embedded in a part of the card, and has arithmetic functions to write, read, and erase information via a reader/writer. However, if the thickness of the re card is Is○ standard, the maximum is 0.84
Mi! J, and the IC module is what determines its thickness.

そのICモジュールの構造は、従来ガラスエポキシ材を
用いた両面基板が多く用いられていたが、基板゛の厚味
精度が悪いため、できあがりのICモジュールの厚味も
パランキの大きいものであった。
Conventionally, double-sided substrates made of glass epoxy materials have often been used in the structure of IC modules, but due to the poor thickness accuracy of the substrates, the thickness of the finished IC modules also varies greatly.

この問題を解決する為に出願人は先にリードフレームタ
イプのものを用いて厚味精度を向上させたものを提案し
た。
In order to solve this problem, the applicant previously proposed a lead frame type device with improved thickness accuracy.

その構造を第3図をみながら説明する。Its structure will be explained with reference to FIG.

帯状の金属性素材から打抜加工や、フォトエツチング加
工により所定の形状に形成され、リードフレーム1の一
部2にニッケルや金等のメツキを施こして外部端子の接
触する電極3とし、他面4に集積回路(以下ICと称す
)5をダイボンド樹脂6でダイボンディングし、例えば
金、アルミ、銅等の導体線7を用いてワイヤーボンディ
ング法にて、上記池面4と上記工C5の入出カッ<ノド
(図示せず)とを接続する。
A band-shaped metallic material is formed into a predetermined shape by punching or photo-etching, and a part 2 of the lead frame 1 is plated with nickel, gold, etc. to form an electrode 3 that is in contact with an external terminal. An integrated circuit (hereinafter referred to as IC) 5 is die-bonded to the surface 4 using a die-bonding resin 6, and the above-mentioned pond surface 4 and the above-mentioned construction C5 are bonded by a wire bonding method using a conductor wire 7 of, for example, gold, aluminum, copper, etc. Connect the input and output ports (not shown).

纜いてエポキシ等の成形材料を用いたトランスフォーマ
成形法で封止樹脂8により上記IC5゜上記導体線7、
及び上記他面4を覆っている。この構造で上記封止樹脂
8の上面は上記−而2とほぼ平行であり、上記−而2は
露出した構造となっている。
Then, using a transformer molding method using a molding material such as epoxy, the above IC5° and the above conductor wire 7,
and covers the other surface 4. In this structure, the upper surface of the sealing resin 8 is substantially parallel to the above-mentioned part 2, and the above-mentioned part 2 is exposed.

発明が解決しようとする課題 ところで上記IC5を封止樹脂8で覆うことをトランス
ファー成形法で行う場合、成形後金型との離形性を良く
するために上記封止樹脂8中には離形材が混入されてい
る。金型との離形性を良くするということは逆に言えば
、上記リードフレーム1との接着力も弱いということに
なシ、外的な力、あるいは熱ひずみにより、上記リード
フレーム1が上記封止樹脂8からはがれるという問題が
発生し、reモジュールの信頼性が低下することとなる
Problems to be Solved by the Invention When the IC 5 is covered with the sealing resin 8 using a transfer molding method, the sealing resin 8 contains a mold release agent in order to improve the releasability from the mold after molding. material is mixed. Conversely, improving the mold releasability from the mold does not mean that the adhesive force with the lead frame 1 is also weak, and the lead frame 1 may be damaged by external force or thermal strain. This causes a problem of peeling off from the stopper resin 8, which reduces the reliability of the re module.

一方ICモジュールの実装工程においても、上記リード
フレーム1の厚味が0.15ミリ程度と薄いことから上
記リードフレーム1がノリやすぐ、複数の上記電極3間
で上記リードフレーム1のソリによる高さの不ぞろいが
生じ、上記IC5を上記ダイボンド樹脂6でダイボンデ
ィングする熱硬化時に上記IC5が傾いたり、同じく上
記′電極3間の高さの不ぞろいがワイヤボンド性()v
−プ高さ、引張強度等)に大きく影響を与えることにな
る。またトランスファー成形時に上記リードフレーム1
の上記−面2を下金型に均一に密着させることが非常に
困難であることから、封止樹脂8が上記″電極3の上記
−而2に囲り込んで付着し、外部端子との接触不良が発
生する。
On the other hand, in the IC module mounting process, since the thickness of the lead frame 1 is as thin as about 0.15 mm, the lead frame 1 may easily become glued or warped between the plurality of electrodes 3. Unevenness in height may occur, causing the IC5 to tilt during heat curing when die-bonding the above-mentioned IC5 with the die-bonding resin 6, and similarly, unevenness in the height between the electrodes 3 may result in poor wire bonding properties ()v
- This will have a large effect on the height, tensile strength, etc.). Also, during transfer molding, the lead frame 1
Since it is very difficult to make the above-mentioned side 2 of the electrode 3 adhere uniformly to the lower mold, the sealing resin 8 surrounds and adheres to the above-mentioned side 2 of the above-mentioned ``electrode 3'', and the contact with the external terminal is caused. Poor contact occurs.

更に各種実装設備、例えばダイボンド、ワイヤボンド、
ベーキング、トランスファー成形、切断。
Furthermore, various mounting equipment such as die bond, wire bond, etc.
Baking, transfer molding, cutting.

検査等の特に搬送系でいずれも設備の構造上、電極の一
面2に機械的なダメージ(傷)が入りやすく、外観不良
を引きおこす原因にもなる。
Due to the structure of the equipment, particularly in transportation systems for inspections, etc., mechanical damage (scratches) is likely to occur on one surface 2 of the electrode, which may cause poor appearance.

課題を解決するための手段 この問題点を解決する本発明の技術的手段は、複数の電
極のうち外部端子が接触する接触領域以外の少なくとも
電極間にまたがって電極の一面を絶縁性保護材で覆った
ものである。
Means for Solving the Problem The technical means of the present invention for solving this problem is to cover one surface of the electrodes with an insulating protective material at least between the electrodes other than the contact area where the external terminal contacts. It is covered.

作用 この溝底により電極の一面の電極間部が絶縁性保護材で
被覆されていることから、外的な力あるいは熱ひずみ等
があっても封止樹脂から電極がはがれにくく、ICモジ
ュールの信頼性が高くなり、一方実装工程にてリードフ
レームの電極間で高さの不ぞろいが出ないことから、ダ
イボンド性、ワイヤボンド性が良く、また封止樹脂が電
極の接触領域まで囲り込まないこと、更に実装設備等で
電極の接触領域に傷が入りにくいことから実装歩留りの
向上が可能である。
Function: This groove bottom allows the area between the electrodes on one side of the electrode to be covered with an insulating protective material, making it difficult for the electrode to peel off from the sealing resin even under external force or thermal strain, increasing the reliability of the IC module. On the other hand, there is no unevenness in height between the electrodes of the lead frame during the mounting process, so die bonding and wire bonding properties are good, and the sealing resin does not surround the contact area of the electrodes. Furthermore, the mounting yield can be improved because the contact area of the electrodes is less likely to be damaged by mounting equipment or the like.

実施例 以下本発明の一実施例について図面を参照しながら説明
する。第1図a、bは本発明の一実施例によるICモジ
ュールの新面構造図及び電極部からみた上面図である。
EXAMPLE An example of the present invention will be described below with reference to the drawings. FIGS. 1a and 1b are a new structural diagram and a top view of an IC module according to an embodiment of the present invention as seen from the electrode section.

複数の電極11の一面12側で外部端子と接触する接触
領域13以外を少なくとも上記電極11間に寸たがって
、例えばポリイミド樹脂のような絶縁性保護材14で被
覆されたリードフレーム16の他面16に、ダイボンド
樹脂17でIC1Bが接着、載置され、上記ICl3の
入出力パッド(図示せず)と、上記電極11の上記他面
16を例えば金、アルミ、銅等を用いたワイヤボンディ
ング方式の導体線19で接続する。その後、上記lG1
8と上記″7H’M11の上記曲面16と上記導体線1
9を含んで、上記″置版11の上記−面12側を封止樹
脂2oで覆った構造のものである。上記絶縁性保護材1
4は本実施例ではポリイミド樹脂を用いたが、耐熱性が
あり、リードフレーム15との密着性が強固で、厚味が
例えば100ミクロン以下と薄ければ池の材料でも可能
である。第1図による一実施例において上記電極11の
一面12は平坦な状態を示しているが、上記絶縁性保護
材14で被覆する領域に薄く段差を設けた構造とし、そ
の段差領域に上記絶縁性保護材14を落し込んだ形にし
てもかまわない。
The other surface of the lead frame 16 is covered with an insulating protective material 14 such as polyimide resin, extending at least between the electrodes 11 except for the contact area 13 that contacts the external terminal on the one surface 12 side of the plurality of electrodes 11. 16, the IC 1B is bonded and mounted with a die bonding resin 17, and the input/output pads (not shown) of the ICl 3 and the other surface 16 of the electrode 11 are bonded using a wire bonding method using, for example, gold, aluminum, copper, etc. Connect with the conductor wire 19. After that, the above lG1
8, the curved surface 16 of the "7H'M11" and the conductor wire 1
9, the negative surface 12 side of the plate 11 is covered with a sealing resin 2o.The insulating protective material 1
Although polyimide resin is used as material 4 in this embodiment, it is also possible to use a resin material as long as it is heat resistant, has strong adhesion to the lead frame 15, and is thin, for example, 100 microns or less. In the embodiment shown in FIG. 1, one surface 12 of the electrode 11 is shown in a flat state, but the structure is such that a thin step is provided in the region covered with the insulating protective material 14, and the step region is covered with the insulating material 14. The protective material 14 may have a depressed shape.

また上記絶縁性保護材14は上記電極11間にまたがる
だけでなく、上記准確11の上記−而12の外周のすべ
てかあるい1/i:、はぼ全周を上記電極11の端面か
ら所定の距離被覆してもかまわない。
In addition, the insulating protective material 14 not only extends between the electrodes 11, but also extends from the end surface of the electrode 11 to the entire or 1/i: It may be covered for a predetermined distance.

この場合上記電極11の上記−而12を上記絶縁性保護
材14で被覆する距離は上記電極11の端面からjOミ
リ程度とした。
In this case, the distance between the ends 12 of the electrode 11 covered with the insulating protective material 14 was approximately jO mm from the end face of the electrode 11.

更に上記ICl3のサイズが小さく、グイボンド用のダ
イパッド(図示せず)が設けられる場合は、上記′1宜
極11の上記接触領域13以外とダイパッドの一面12
にまたがって上記絶縁性保護材14で被覆することはい
うまでもない。この場合、ダイパッドの一面全面、ある
いは外周部のみを上記絶縁性保護材14で被覆してもか
まわない。
Furthermore, if the size of the ICl 3 is small and a die pad (not shown) for Guibond is provided, the surface 12 of the die pad other than the contact area 13 of the '1 holder 11 is
Needless to say, the insulating protective material 14 covers the entire area. In this case, the entire surface of the die pad or only the outer periphery may be covered with the insulating protective material 14.

また本発明の一実施例では上記ICl3を、上記リード
フレーム15の上部他面16へ載置する方式、上記工C
18の入出力パッドを上記電極11の上記池面16を接
続する方式は、ダイポンチ゛イング方式、ワイヤボンデ
ィング方式にしたが、他の例えばバンブを用いたワイヤ
レスボンディングでもかまわない。
In one embodiment of the present invention, the ICl 3 is placed on the other surface 16 of the upper part of the lead frame 15;
Although the die punching method and the wire bonding method are used to connect the 18 input/output pads to the pond surface 16 of the electrode 11, other methods such as wireless bonding using bumps may be used.

以上のべた本発明の製造プロセスを第2図にて説明する
。リードフレーム15の一面12の少なくとも、外部端
子の接触する接触領域13以外を複数の電極11にまた
がって、例えばポリイミド樹脂のような絶縁性保護材1
4を接着する(第2図a)。この状態で上記リードフレ
ーム15の上記−而12は上記絶縁性保護材14により
ほぼ平坦に保たれた形となる。この時の上記絶縁性保護
材14と上記重版11の接着条件は、例えば27Q℃、
2時間であシ、上記絶縁性保護材14の厚味は約60ミ
クロンである。
The above manufacturing process of the present invention will be explained with reference to FIG. At least one surface 12 of the lead frame 15 other than the contact area 13 in contact with the external terminal is covered with an insulating protective material 1 such as, for example, polyimide resin, across the plurality of electrodes 11.
4 (Figure 2a). In this state, the ends 12 of the lead frame 15 are kept substantially flat by the insulating protection material 14. At this time, the bonding conditions between the insulating protective material 14 and the reprint 11 are, for example, 27Q°C;
After 2 hours, the thickness of the insulating protective material 14 is about 60 microns.

続いて上記リードフレーム15の上記(Ba而面6に上
記ICl3をグイボンド樹脂17を用層て接着し、上記
工C18の入出カバノドと上記電極11の上記池面16
をワイヤーボンディング方式にて、例えば金の導体線1
9で接続する(第2図b)。
Next, the ICl3 is bonded to the Ba surface 6 of the lead frame 15 using a layer of Guibond resin 17, and the input and output ports of the work C18 and the pond surface 16 of the electrode 11 are bonded.
Using wire bonding method, for example, gold conductor wire 1
9 (Figure 2b).

更に上記接触領域13.上記絶縁性保護材14とに均一
に接触するような下金型を用いて、上記リードフレーム
15の上記池面16.上記ICl3 。
Furthermore, the contact area 13. Using a lower mold that makes uniform contact with the insulating protective material 14, the surface 16 of the lead frame 15. ICl3 above.

上記導体線19を含んだ形に封止樹脂20で被覆する(
第2図C)。この時上記封止樹脂20は上記’KI’M
11間にも侵入して上記−面12とほぼ平坦に成形され
ることはいうまでもない。
The conductor wire 19 is covered with a sealing resin 20 (
Figure 2C). At this time, the sealing resin 20 is
Needless to say, it also penetrates between the holes 11 and 12 and is formed almost flat with the above-mentioned negative surface 12.

発明の効果 本発明のICモジュールは電極間にまたがって一主面の
一部が絶縁性保護材で被覆されていることから、次のよ
うな効果が得られる。
Effects of the Invention Since the IC module of the present invention has a part of one principal surface covered between the electrodes with an insulating protective material, the following effects can be obtained.

(1)外的な力、あるいは熱ひずみ等による電極はがれ
かないことからICモジュールの信頼性が向上する。
(1) The reliability of the IC module is improved because the electrodes do not come off due to external force or thermal strain.

(2)実装工程での電極の接触領域へのキズが入りにく
く、外観良品率を向上させることができる。
(2) The contact area of the electrode is less likely to be scratched during the mounting process, and the rate of products with good appearance can be improved.

(3)リードフレームの電極間の高さがほぼ一定である
ことから、実装工程のグイボンド性、ワイヤボンド性が
良く、安定する。
(3) Since the height between the electrodes of the lead frame is almost constant, the bonding and wire bonding properties of the mounting process are good and stable.

(4)同じく封止樹脂の電極の接触領域への囲り込みが
なく、実装歩留シの向上が可能である。
(4) Similarly, there is no enclosing of the sealing resin in the contact area of the electrode, and it is possible to improve the mounting yield.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a、bは本発明のICモジュールの断面発明のI
Cモジュールの製造フロー図、第3図は従来のリードフ
レームを用いたICモジュールの断面構造図である。 11・・・・・・電極、1色・・・・・・接触領域、1
4・・・・・絶縁性保護材、15・・・・・・リードフ
レーム 18rC12o・・・・・封止樹脂。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第 図 (α) 第 図
Figures 1a and 1b are cross-sectional views of the IC module of the present invention.
FIG. 3, which is a manufacturing flow diagram of the C module, is a cross-sectional structural diagram of an IC module using a conventional lead frame. 11...Electrode, 1 color...Contact area, 1
4... Insulating protective material, 15... Lead frame 18rC12o... Sealing resin. Name of agent: Patent attorney Toshio Nakao and one other person Figure (α) Figure

Claims (1)

【特許請求の範囲】[Claims] 間隔をおいて平面状に配置された複数の電極と、これら
の電極の一面側のうち外部端子が接触する接触領域以外
の部分で、少なくとも上記電極間にまたがって被覆され
た絶縁性保護材と、上記電極の他面側に載置され、その
複数の入出力パッドが上記電極の他面と接続された集積
回路と、上記電極の一面側において少なくとも上記集積
回路を覆った封止樹脂より構成された集積回路装置。
A plurality of electrodes arranged in a planar manner at intervals, and an insulating protective material coated at least between the electrodes on a portion of one side of these electrodes other than the contact area where an external terminal contacts. , an integrated circuit placed on the other surface of the electrode and having a plurality of input/output pads connected to the other surface of the electrode, and a sealing resin covering at least the integrated circuit on one surface of the electrode. integrated circuit device.
JP63142154A 1988-06-09 1988-06-09 Integrated circuit device Pending JPH021395A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63142154A JPH021395A (en) 1988-06-09 1988-06-09 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63142154A JPH021395A (en) 1988-06-09 1988-06-09 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPH021395A true JPH021395A (en) 1990-01-05

Family

ID=15308617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63142154A Pending JPH021395A (en) 1988-06-09 1988-06-09 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPH021395A (en)

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