JPH02138753A - Semiconductor pellet and its assembly structure - Google Patents
Semiconductor pellet and its assembly structureInfo
- Publication number
- JPH02138753A JPH02138753A JP29288188A JP29288188A JPH02138753A JP H02138753 A JPH02138753 A JP H02138753A JP 29288188 A JP29288188 A JP 29288188A JP 29288188 A JP29288188 A JP 29288188A JP H02138753 A JPH02138753 A JP H02138753A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gold
- metal
- alloy layer
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000008188 pellet Substances 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000010931 gold Substances 0.000 claims abstract description 50
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052737 gold Inorganic materials 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 12
- 239000000956 alloy Substances 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 7
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract description 6
- 238000005219 brazing Methods 0.000 abstract description 4
- 229910017401 Au—Ge Inorganic materials 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 2
- 229910005936 Ge—Sb Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 15
- 229910000927 Ge alloy Inorganic materials 0.000 description 14
- 229910052732 germanium Inorganic materials 0.000 description 14
- 239000011651 chromium Substances 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 229910000599 Cr alloy Inorganic materials 0.000 description 7
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 7
- 229910001020 Au alloy Inorganic materials 0.000 description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 5
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 5
- 238000002845 discoloration Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910002708 Au–Cu Inorganic materials 0.000 description 2
- 229910001245 Sb alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002140 antimony alloy Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- FGSKFBCYWQLIET-UHFFFAOYSA-N [Sb].[Ge].[Au] Chemical group [Sb].[Ge].[Au] FGSKFBCYWQLIET-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は信頼性の高いベアボンドが可能な裏面電極構造
を有する半導体ペレットとその組立構造に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a semiconductor pellet having a back electrode structure that allows bare bonding with high reliability, and an assembly structure thereof.
（ロ）従来の技術
半導体ペレットをベレット付けする為の裏面電極構造と
して様々な金属の組合わせが提案されている（例えば、
特開昭５６−１４２６３３号、特開昭５９−２１３１４
５号等）。その中で、−ｍの低コスト化を目的として、
リードフレームの金属メツキを省き、銅系素材の表面に
直に且つ接着ソルダー無しでペレット付けする、所謂ベ
アボンドに対応する為の裏面電極構造が提案されている
。(b) Conventional technology Various metal combinations have been proposed as back electrode structures for pelletizing semiconductor pellets (for example,
JP-A-56-142633, JP-A-59-21314
No. 5, etc.). Among them, with the aim of reducing the cost of -m,
A back electrode structure has been proposed for so-called bare bonding, in which the metal plating of the lead frame is omitted and the pellet is attached directly to the surface of the copper-based material without adhesive solder.
その構造は第３図に示す様に、半導体ペレット（１）の
裏面にまずニッケル・クロム（Ｎｉ−Ｃｒ）合金層（２
）が、次いで金・ゲルマニウム（Ａｕ−Ｇｅ）合金層（
３）が、そして金（Ａｕ）珊（４）が順次積層されたも
のである。金層（４）と金・ゲルマニウム合金層（３）
の金（Ａｕ）がリードフレームの銅（Ｃｕ）とＡｕ−Ｃ
ｕ合金を形成してベレットを接着する役割を果たし、金
・ゲルマニウム合金層（３）のゲルマニウムが金の融点
を下げてボンダビリティを改善する役割を果たし、ニッ
ケル・クロム合金層（２）がペレット（１）のシリコン
と金・ゲルマニウム合金層（３）の間を仲立ちして金層
（４）の膜剥離を防止する役割を果たす。また、ペレッ
ト（１）がＮＰＮ型トランジスタ等、Ｎ型基板で構成さ
れる場合、Ｎ型シリコンと電極とでショットキー障壁を
作り易いので、金・ゲルマニウム合金Ｎ（３）に更にア
ンチモン（Ｓｂ）を入れることにより、良好なオーミッ
クコンタクトを得ることが成される。As shown in Figure 3, the structure is as follows: First, a nickel-chromium (Ni-Cr) alloy layer (2) is placed on the back side of a semiconductor pellet (1).
), followed by a gold-germanium (Au-Ge) alloy layer (
3) and gold (Au) coral (4) are sequentially laminated. Gold layer (4) and gold/germanium alloy layer (3)
The gold (Au) in the lead frame is the same as the copper (Cu) and Au-C in the lead frame.
The germanium in the gold-germanium alloy layer (3) plays the role of lowering the melting point of gold and improving bondability, and the nickel-chromium alloy layer (2) plays the role of bonding the pellet together by forming a u-alloy. It acts as an intermediary between the silicon (1) and the gold/germanium alloy layer (3) to prevent the gold layer (4) from peeling off. In addition, when the pellet (1) is composed of an N-type substrate such as an NPN-type transistor, it is easy to create a Schottky barrier between the N-type silicon and the electrode, so antimony (Sb) is added to the gold-germanium alloy N (3). A good ohmic contact can be obtained by inserting the .
（ハ）発明が解決しようとする課題
しかしながら、従来の裏面電極構造は、時間経過と共に
第２層目のゲルマニウム（Ｇｅ）またはゲルマニウム（
Ｇｅ）とアンチモン（ｓｂ）の両方が第１層目の金層（
４）に拡散され、金層（４）表面に出現して変色させる
ことが判明した。この変色は金層（４）の表面状態を変
化させるので、ベアボンド（Ａｕ−Ｃｕ）接着強度を弱
め、信頼性を低下させる欠点があった。その為従来は、
金層（４）を厚くするか、組立て前に前記変色を削り取
る作業を行なっていたが、コスト高と組立て工程の繁雑
さを招く。(c) Problems to be Solved by the Invention However, with the passage of time, the conventional back electrode structure is made of germanium (Ge) or germanium (germanium (Ge)) as the second layer.
Both Ge) and antimony (sb) are present in the first gold layer (
4), and appeared on the surface of the gold layer (4), causing discoloration. This discoloration changes the surface condition of the gold layer (4), which has the disadvantage of weakening bare bond (Au-Cu) adhesive strength and reducing reliability. Therefore, conventionally,
The gold layer (4) has been made thicker or the discoloration has been scraped off before assembly, but this increases costs and complicates the assembly process.
（ニ）課題を解決する為の手段
本発明は上記従来の課題に鑑み成されたもので、金・ゲ
ルマニウム合金層（１３）の表面にゲルマニウムの拡散
を阻止する金属層（１４）を介して金層（１５）を被着
することにより、金層（１５）表面の変色を防止し得る
半導体ベレットとその組立て構造を提供するものである
。(d) Means for Solving the Problems The present invention has been made in view of the above-mentioned conventional problems. The object of the present invention is to provide a semiconductor pellet that can prevent discoloration of the surface of the gold layer (15) by depositing the gold layer (15), and an assembly structure thereof.
（ホ）作用
本発明によれば拡散を阻止する金属層（１４）がゲルマ
ニウム（Ｇｅ）またはアンチモン（Ｓｂ）の拡散を阻止
するので、金層（１５）表面の変色を防止できる。(e) Function According to the present invention, the metal layer (14) that prevents diffusion prevents germanium (Ge) or antimony (Sb) from diffusing, so discoloration of the surface of the gold layer (15) can be prevented.
（へ）実施例 以下に本発明の１実施例を詳細に説明する。(f) Example One embodiment of the present invention will be described in detail below.
第１図において、（１１）は表面にトランジスタ等の素
子形成が終了したＰ型又はＮ型のシリコン半導体ペレッ
トであり、（１２）はペレット（１１）裏面に第１層目
に形成した膜厚３００〜１０００人のニッケル・クロム
（Ｎｉ−Ｃｒ）合金層、〈１３）は第２層目としてニッ
ケル・クロム合金層の表面に形成した膜厚数千人の金・
ゲルマニウム合金層、（１４〉は第３層目として金・ゲ
ルマニウム合金層（１３）の表面に形成した膜厚５０〜
３００人のクロム（Ｃｒ）又はニッケル・クロム（Ｎｉ
−Ｃｒ）合金層、そして（１５）が第４層目としてニッ
ケル・クロム合金層り１４）の表面に形成した膜厚１０
００〜４０００人の金（Ａｕ）Ｍである。これらは全て
蒸着又はスパッタ法により各々形成きれる。尚、ペレッ
Ｉ−（１１）がＮ型の場合は、金・ゲルマニウム合金層
（１３）はオーミックコンタクトの為に金・ゲルマニウ
ム・アンチモン合金（Ａｕ−Ｇｅ−５ｂ ）層に替わる
。In Figure 1, (11) is a P-type or N-type silicon semiconductor pellet on which elements such as transistors have been formed on the surface, and (12) is the thickness of the first layer formed on the back surface of the pellet (11). A nickel-chromium (Ni-Cr) alloy layer with a thickness of 300 to 1,000 thick, and <13) a gold layer with a thickness of several thousand thick formed on the surface of the nickel-chromium alloy layer as the second layer.
Germanium alloy layer (14) is the third layer formed on the surface of the gold/germanium alloy layer (13) with a thickness of 50~
300 chromium (Cr) or nickel chromium (Ni)
-Cr) alloy layer, and (15) is the fourth layer formed on the surface of the nickel-chromium alloy layer 14) with a film thickness of 10
00-4000 gold (Au) M. All of these can be formed by vapor deposition or sputtering. Note that when Pellet I-(11) is of N type, the gold-germanium alloy layer (13) is replaced with a gold-germanium-antimony alloy (Au-Ge-5b) layer for ohmic contact.
上記構成の半導体ペレット（１１）の裏面電極構造は、
銅系リードフレームの銅系素材が露出したタブ部に直接
且つロウ材を使わずに接着するべく構成したものであり
、その際外気に触れる第４層目の金層（１５）が酸化防
止の役割、第４層目の金層（１５）と第２層目の金・ゲ
ルマニウム合金層（１３）の金（Ａｕ）がリードフレー
ムの銅（Ｃｕ）とＡｕ−Ｃｕ合金を形成してペレットを
接着するロウ材としての役割、第２層目の金・ゲルマニ
ウム合金層（１３）のゲルマニウムが金の上点を下げて
ボンダビリティを改善する役割、第１層目のニッケル・
クロム合金層（１２）がペレット（１１）のシリコン（
Ｓｉ）と金・ゲルマニウム合金層（１３）との間を仲立
ちして金層（１３）（１５）の膜剥離を防止する役割、
そして第３層目のクロム又はニッケル・クロム合金層（
１４）が第２層目の金・ゲルマニウム合金層（１３）又
は金・ゲルマニウム・アンチモン合金層から第４層目の
金層（１５）へのゲルマニウム（Ｇｅ）またはアンチモ
ン（Ｓｂ）の拡散を防止する役割を各々果たす。The back electrode structure of the semiconductor pellet (11) having the above configuration is as follows:
The copper-based material of the copper-based lead frame is configured to be bonded directly to the exposed tab portion without using brazing material, and the fourth gold layer (15) that is exposed to the outside air has an oxidation-preventing layer. The role of the gold (Au) in the fourth gold layer (15) and the second gold-germanium alloy layer (13) forms an Au-Cu alloy with the copper (Cu) of the lead frame to form pellets. The role of the germanium in the second layer of gold/germanium alloy layer (13) is to lower the top point of the gold and improve bondability, and the role of the nickel and germanium in the first layer as a brazing material for adhesion.
The chromium alloy layer (12) is made of silicon (
role of acting as an intermediary between Si) and the gold/germanium alloy layer (13) to prevent film peeling of the gold layer (13) (15);
And the third layer of chromium or nickel-chromium alloy layer (
14) prevents the diffusion of germanium (Ge) or antimony (Sb) from the second gold/germanium alloy layer (13) or the gold/germanium/antimony alloy layer to the fourth gold layer (15). Each person fulfills their role.
そして上記半導体ペレット（１１）は、３００〜５ｏｏ
’ｃの熱処理を伴って前記タブ部に固着される。その際
、前記熱処理によって先ず第２層目の金・ゲルマニウム
合金層（１３）が溶け、続いて溶けたゲルマニウム（Ｇ
ｅ）が前記熱処理によって第３層目のクロム又はニッケ
ル・クロム合金層（１４）を貫通し、貫通したゲルマニ
ウム（Ｇｅ）が第４層目の金層（１５）をも溶かし、溶
けた金（Ａｕ）がタブ部の銅＜ＣＵ）と合金化し且つペ
レット（１１）のシリコン（Ｓｉ）と共晶してペレット
（１１）を固着する。従って、第３層目のクロム又はニ
ッケル・クロム合金Ｊ’！（１４）の膜厚は、定常状態
に於てゲルマニウム（Ｇｅ）の貫通を阻止し、前記熱処
理に依ってゲルマニウム（Ｇｅ）を貫通させる様な厚さ
が好ましい。厚すぎると、金（Ａｕ）の溶は性が悪化す
る。The semiconductor pellet (11) has a particle size of 300 to 50 mm.
It is fixed to the tab part with heat treatment of 'c. At this time, the second gold-germanium alloy layer (13) is first melted by the heat treatment, and then the melted germanium (G) is melted.
e) penetrates the third chromium or nickel-chromium alloy layer (14) through the heat treatment, and the penetrating germanium (Ge) also melts the fourth gold layer (15), causing the molten gold ( Au) is alloyed with the copper (<CU) of the tab portion and eutectic with the silicon (Si) of the pellet (11) to fix the pellet (11). Therefore, the third layer of chromium or nickel-chromium alloy J'! The thickness of the film (14) is preferably such that it prevents germanium (Ge) from penetrating in a steady state and allows germanium (Ge) to penetrate through the heat treatment. If it is too thick, the meltability of gold (Au) will deteriorate.
斯る構成によれば、クロム又はニッケル・クロム合金層
（１４）が定常状態において金・ゲルマニウム合金層＜
１３）から金層（１５〉へのゲルマニウム（Ｇｅ）の進
入を防止するので、金層（１５）の表面を清浄に保つこ
とができる。従って、銅系リードフレームのタブ部に対
して信頼性の高いヘアボンドを行なうことができる。According to such a configuration, the chromium or nickel-chromium alloy layer (14) has a gold-germanium alloy layer<
Since germanium (Ge) is prevented from entering the gold layer (15) from 13), the surface of the gold layer (15) can be kept clean. Therefore, the reliability of the tab part of the copper lead frame is improved. A high hair bond can be performed.
（ト）効果
以上説明した様に、本発明によれは、クロム又はニッケ
ル・クロム合金層（１４）によって金層（１５）表面へ
のゲルマニウム（Ｇｅ）の拡散を防止するので、信頼性
の高いベアボンドを実施できる利点を有する。また、第
３層目のクロム又はニッケル・クロム合金層（１４）の
膜厚を選択することにより金層（１５）を薄くできるの
で、材料費を低減しコストを下げられる利点をも有する
。(G) Effects As explained above, the present invention prevents the diffusion of germanium (Ge) to the surface of the gold layer (15) by the chromium or nickel-chromium alloy layer (14), resulting in high reliability. It has the advantage of being able to carry out bare bonding. Furthermore, by selecting the thickness of the third chromium or nickel-chromium alloy layer (14), the gold layer (15) can be made thinner, which has the advantage of reducing material costs and costs.
第１図と第２図は夫々本発明を説明する為の断面図と特
性図、第３図は従来例を説明する為の断面図である。1 and 2 are a sectional view and a characteristic diagram, respectively, for explaining the present invention, and FIG. 3 is a sectional view for explaining a conventional example.
Claims (3)
金の融点を下げる金属との合金層、前記融点を下げる金
属の拡散を阻止する金属層、及び金層を順次積層したこ
とを特徴とする半導体ペレット。(1) A peel-preventing metal layer, an alloy layer of gold and a metal that lowers the melting point of gold, a metal layer that prevents diffusion of the metal that lowers the melting point, and a gold layer are sequentially laminated on the back surface of the semiconductor pellet. semiconductor pellets.
ケル・クロム合金層であることを特徴とする請求項第１
項に記載の半導体ペレット。(2) Claim 1, wherein the metal layer for preventing diffusion is a nickel layer or a nickel-chromium alloy layer.
Semiconductor pellets described in Section.
金の融点を下げる金属との合金層、前記融点を下げる金
属の拡散を阻止する金属層、及び金層を順次積層し、こ
れを銅系素材が露出するダイ部分にベアボンドしたこと
を特徴とする半導体ペレットの組立構造。(3) On the back side of the semiconductor pellet, a peel-preventing metal layer, an alloy layer of gold and a metal that lowers the melting point of gold, a metal layer that prevents diffusion of the metal that lowers the melting point, and a gold layer are sequentially laminated. A semiconductor pellet assembly structure characterized by bare bonding on the die part where the copper-based material is exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63292881A JPH0766927B2 (en) | 1988-11-18 | 1988-11-18 | Method for manufacturing semiconductor pellet and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63292881A JPH0766927B2 (en) | 1988-11-18 | 1988-11-18 | Method for manufacturing semiconductor pellet and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02138753A true JPH02138753A (en) | 1990-05-28 |
| JPH0766927B2 JPH0766927B2 (en) | 1995-07-19 |
Family
ID=17787585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63292881A Expired - Lifetime JPH0766927B2 (en) | 1988-11-18 | 1988-11-18 | Method for manufacturing semiconductor pellet and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766927B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5530834A (en) * | 1978-08-25 | 1980-03-04 | Nec Corp | Method of forming ohmic contact in semiconductor pellet |
| JPS5919335A (en) * | 1982-07-26 | 1984-01-31 | Toshiba Corp | Semiconductor device |
| JPS61296727A (en) * | 1985-06-25 | 1986-12-27 | Yokogawa Electric Corp | Fixing of silicon pellet |
| JPS6220338A (en) * | 1985-07-19 | 1987-01-28 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1988
- 1988-11-18 JP JP63292881A patent/JPH0766927B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5530834A (en) * | 1978-08-25 | 1980-03-04 | Nec Corp | Method of forming ohmic contact in semiconductor pellet |
| JPS5919335A (en) * | 1982-07-26 | 1984-01-31 | Toshiba Corp | Semiconductor device |
| JPS61296727A (en) * | 1985-06-25 | 1986-12-27 | Yokogawa Electric Corp | Fixing of silicon pellet |
| JPS6220338A (en) * | 1985-07-19 | 1987-01-28 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0766927B2 (en) | 1995-07-19 |
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