JPH021379B2 - - Google Patents

Info

Publication number
JPH021379B2
JPH021379B2 JP57091342A JP9134282A JPH021379B2 JP H021379 B2 JPH021379 B2 JP H021379B2 JP 57091342 A JP57091342 A JP 57091342A JP 9134282 A JP9134282 A JP 9134282A JP H021379 B2 JPH021379 B2 JP H021379B2
Authority
JP
Japan
Prior art keywords
thin film
amorphous semiconductor
semiconductor thin
metal resistor
thermocouple
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57091342A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58209174A (ja
Inventor
Setsuo Kotado
Akira Taniguchi
Kyoshi Takahashi
Makoto Konagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anritsu Corp
Original Assignee
Anritsu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anritsu Corp filed Critical Anritsu Corp
Priority to JP57091342A priority Critical patent/JPS58209174A/ja
Publication of JPS58209174A publication Critical patent/JPS58209174A/ja
Publication of JPH021379B2 publication Critical patent/JPH021379B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/81Structural details of the junction
    • H10N10/817Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered

Landscapes

  • Measuring Temperature Or Quantity Of Heat (AREA)
JP57091342A 1982-05-31 1982-05-31 熱電対素子 Granted JPS58209174A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57091342A JPS58209174A (ja) 1982-05-31 1982-05-31 熱電対素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57091342A JPS58209174A (ja) 1982-05-31 1982-05-31 熱電対素子

Publications (2)

Publication Number Publication Date
JPS58209174A JPS58209174A (ja) 1983-12-06
JPH021379B2 true JPH021379B2 (enrdf_load_stackoverflow) 1990-01-11

Family

ID=14023740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57091342A Granted JPS58209174A (ja) 1982-05-31 1982-05-31 熱電対素子

Country Status (1)

Country Link
JP (1) JPS58209174A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124053U (ja) * 1984-01-30 1985-08-21 アンリツ株式会社 双子形熱電対素子
JP2876405B2 (ja) * 1985-12-27 1999-03-31 アンリツ株式会社 薄膜熱電対素子
JP2577546B2 (ja) * 1986-04-25 1997-02-05 アンリツ株式会社 熱電対素子とその製法
JP5361279B2 (ja) 2008-08-18 2013-12-04 株式会社ダ・ビンチ 熱電変換素子

Also Published As

Publication number Publication date
JPS58209174A (ja) 1983-12-06

Similar Documents

Publication Publication Date Title
JP2834202B2 (ja) 赤外線検出器
Klonz et al. Accurate thin film multijunction thermal converter on a silicon chip (AC-DC standard)
US5393351A (en) Multilayer film multijunction thermal converters
JP4137196B2 (ja) 赤外線検出器及びその製造方法
Iborra et al. IR uncooled bolometers based on amorphous Ge/sub x/Si/sub 1-x/O/sub y/on silicon micromachined structures
Klonz et al. Development of thin-film multijunction thermal converters at PTB/IPHT
JPH06317475A (ja) 赤外線センサおよびその製造方法
JP2006304290A (ja) ボロメータ検出器及びこれをもちいてサブミリ波及びミリ波電磁波を検出する装置
JPH10274561A (ja) 熱型赤外線検出素子
WO1988003319A1 (en) Electric resistor equipped with thin film conductor and power detector
Dong et al. An uncooled microbolometer infrared detector based on poly-SiGe thermistor
JP3258066B2 (ja) サーモパイル型赤外線センサの製造方法
JP3573754B2 (ja) 温度センサー構造体
JPH0590011A (ja) 感温抵抗体及びその製造方法
Liu et al. Study on new structure uncooled a-Si microbolometer for infrared detection
JPH021379B2 (enrdf_load_stackoverflow)
Ahmed et al. Characterization of an amorphous ge/sub x/si/sub 1-x/o/sub y/microbolometer for thermal imaging applications
US11085830B2 (en) High speed graphene oxide bolometers and methods for manufacturing the same
JPS58139475A (ja) ひずみゲ−ジ
Gray et al. Semiconducting YBaCuO as infrared-detecting bolometers
JPS5810874A (ja) 熱電対素子
JP2000356545A (ja) 赤外検出素子とその製造方法
JPH0227827B2 (enrdf_load_stackoverflow)
JP2876405B2 (ja) 薄膜熱電対素子
JP3249174B2 (ja) 赤外線センサおよびその製造方法