JPH021379B2 - - Google Patents
Info
- Publication number
- JPH021379B2 JPH021379B2 JP57091342A JP9134282A JPH021379B2 JP H021379 B2 JPH021379 B2 JP H021379B2 JP 57091342 A JP57091342 A JP 57091342A JP 9134282 A JP9134282 A JP 9134282A JP H021379 B2 JPH021379 B2 JP H021379B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- amorphous semiconductor
- semiconductor thin
- metal resistor
- thermocouple
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 100
- 239000004065 semiconductor Substances 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 34
- 238000000034 method Methods 0.000 description 27
- 239000007789 gas Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910001006 Constantan Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- 229910006728 Si—Ta Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57091342A JPS58209174A (ja) | 1982-05-31 | 1982-05-31 | 熱電対素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57091342A JPS58209174A (ja) | 1982-05-31 | 1982-05-31 | 熱電対素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58209174A JPS58209174A (ja) | 1983-12-06 |
| JPH021379B2 true JPH021379B2 (da) | 1990-01-11 |
Family
ID=14023740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57091342A Granted JPS58209174A (ja) | 1982-05-31 | 1982-05-31 | 熱電対素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58209174A (da) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124053U (ja) * | 1984-01-30 | 1985-08-21 | アンリツ株式会社 | 双子形熱電対素子 |
| JP2876405B2 (ja) * | 1985-12-27 | 1999-03-31 | アンリツ株式会社 | 薄膜熱電対素子 |
| JP2577546B2 (ja) * | 1986-04-25 | 1997-02-05 | アンリツ株式会社 | 熱電対素子とその製法 |
| JP5361279B2 (ja) | 2008-08-18 | 2013-12-04 | 株式会社ダ・ビンチ | 熱電変換素子 |
-
1982
- 1982-05-31 JP JP57091342A patent/JPS58209174A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58209174A (ja) | 1983-12-06 |
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