JPH02130953A - Inverse-blocking transistor module - Google Patents

Abstract

PURPOSE:To make internal chip units share current uniformly by arranging a plurality of transistor and diode chips constituting a module symmetrically and arranging pairs of positive and negative main terminals symmetrically on the plane of a module container. CONSTITUTION:Diodes FRD1 and FRD2 are connected in series to transistor units Tr1 and Tr2, respectively, to bear inverse dielectric strength. A pair of positive main terminals A1 and A2 as well as a pair of negative main terminals E1 and E2 are arranged symmetrically so that main current can be extracted under the same conditions from the two internal transistor-diode units. By providing two pairs of positive and negative main terminals symmetrically for the transistor units in this manner, current can be balanced uniformly between the transistor and diode units.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to the structure of a reverse blocking transistor modinyl, and particularly provides a reverse blocking transistor modinyl suitable for constructing a high power converter.

[Conventional technology]

Conventionally, when a current capacity of several hundred amperes or more is desired as a high power converter using transistors, the current capacity is often satisfied by connecting a large number of transistors and diodes in parallel as an aggregate. For example, 100
If four transistor chips and four diode chips each having a current capacity of A are arranged in parallel, a current capacity of 400A can be obtained.

[Problem to be solved by the invention]

However, as the number of transistor chips in parallel increases, the problem gradually becomes more apparent that chips whose distance from the position of the terminal for connection to an external circuit to the electrode on the chip surface is far are greater than those which are closer. As a result, there is a problem in that current flows more easily in a chip located at a low inductance position than in a chip located at a high inductance position, increasing the risk of current concentration leading to overcurrent damage.

In view of the above, the present invention has been developed to reduce the risk of overcurrent damage due to non-uniformity of current when a plurality of transistor chips are connected in parallel to achieve a large current capacity.

The purpose of the present invention is to provide a reverse blocking transistor module that is difficult to prevent and has high reliability.

[Means to solve the problem]

In order to achieve such a purpose, the reverse blocking transistor module of the present invention has a plurality of transistor chips and a plurality of diode chips connected in series to the collectors of these transistors on a common metal substrate through an insulating plate. The main anode terminal is fixed to the diode chip, and the main emitter terminal and the base terminal are fixed to the diode chip. In,
Each of the anode main terminals and each emitter main terminal has a symmetrical shape and is arranged symmetrically on the outer surface of the insulating container.

[Effect]

When constructing a large-capacity reverse-blocking transistor module, in order to equalize the current to multiple transistors and diode units, first arrange two transistor/diode units symmetrically with each other, each consisting of the same number of transistors and diodes installed in parallel. do. To explain with the previous example,
Each transistor/diode unit has a current capacity of 400A, and the two transistor/diode units collectively have a current capacity of 800A. here,
In order to accurately match the conditions for allowing current to flow equally through both transistor units, two sets (positive and negative) of main current terminals taken out from each transistor and diode are symmetrically provided for each transistor/diode unit. As a result, the positive and negative main terminals and auxiliary collector terminals of the transistor module are arranged in pairs and symmetrically.

By taking out the main current terminal for each transistor/diode unit in this way, the current balance for each transistor/diode unit is balanced, and stable performance as a reverse blocking transistor module can be obtained.

〔Example〕

Hereinafter, one embodiment of the present invention will be described in detail using FIGS. 1 to 4. The same reference numerals assigned in common to each drawing indicate parts having the same function.

FIG. 1 shows an outline view showing the arrangement of external connection terminals of the present invention, FIG. 2(a) is a top view showing the internal structure of the resin case in FIG. 1 with the lid removed, and FIG. (b) shows a side sectional view. FIG. 3 is an equivalent circuit diagram showing the internal wiring of the reverse blocking transistor module of the present invention shown in FIGS. 1 and 2. FIG.

This reverse blocking transistor module includes a transistor Tr, a diode FRD, and a diode FRD as shown in FIG.
I and transistor Tr2. Consists of parallel connection of two transistor/diode units with diode FRD2,
As shown in FIG. 2, each transistor TrI, Tr2
and diode FRDI.

The FRDs 2 are formed by different semiconductor chips.

Furthermore, each of the transistors Tr, Tr2 consists of a three-stage amplification Darlington coupling as shown in FIG. Tr1+ to Tr,... constitute a first transistor unit Tr, and Tr2+ to Tr2. is the second transistor unit Tr! It consists of Each transistor unit Tr, Tr2 has a diode FR.
DI and FRD2 are connected in series and bear the reverse withstand voltage. These transistors Tr.

As shown in FIG. 2, the Tr and the diodes FRDI and FRD2 each consist of, for example, a set of four transistor chips and four diode chips (connected in parallel).

In FIGS. 1 to 3, AI and A2 are a pair of positive main terminals, and El and E2 are a pair of negative main terminals. 1 of these
The main terminals of the pair are configured in a symmetrical shape so as to draw main current from the two internal transistor/diode units under the same conditions.

b is a base terminal, e is an auxiliary emitter terminal for signal input/output, and bl and b2 are connection terminals when the transistor modules are connected in parallel.

When a power converter is constructed using the reverse blocking transistor module of the present invention shown in FIGS. 1 to 3, the equivalent circuit thereof is generally shown in FIG. 4.

AC indicates a power supply, and L indicates a load. Furthermore, using the top view of the transistor module shown in FIG. 1(a), the wiring connections in charge of FIG. 4 are shown in FIG. 5. When constructing a large-capacity transistor module by arranging a plurality of transistor chips and diode chips in parallel, it is important that the current sharing among the transistors and diodes is uniform. In this embodiment, by symmetrically providing two sets of positive and negative main terminals for each transistor unit, it is possible to make the current balance of each transistor and diode unit uniform, and a highly reliable power converter can be constructed.

〔Effect of the invention〕

According to the present invention, in a reverse blocking transistor module having a large current capacity, the arrangement conditions of a plurality of transistors and diode chips or transistors and diodes constituting this module are made symmetrical, and the positive and negative main terminals are connected to By arranging the two symmetrically on the plane of the container, an effect can be obtained in which the current sharing among the internal chips, transistors, and diodes can be made uniform.

[Brief explanation of drawings]

1 is an external view of one embodiment, (a) is a top view, (c) is a side view, M2 is an internal layout diagram of the present invention, and FIG. 3 is an internal equivalent circuit diagram of the present invention. Figure 4 is a wiring diagram of a power converter using the transistor Modineal of the present invention, and Figure 5 is a wiring diagram of a power converter using the transistor Modineal of the present invention.
FIG. A1. A2...Anode (positive) terminal, El, E
, emitter (negative) terminal, Tr, , Tr2-)
Transistor unit, FRD1, FRD2 diode unit. Figure 1 Figure 2 Figure 2

Claims (1)

[Claims] 1) A plurality of transistor chips and a plurality of diode chips connected in series to the collectors of these transistors are fixed on a common metal substrate via an insulating plate, and an anode main terminal which is combined into two from the diode chips and , in which two main emitter terminals and two base terminals are vertically raised from the transistor chip and sealed in an insulating container, and each anode main terminal and each emitter main terminal are symmetrical to each other. What is claimed is: 1. A reverse blocking transistor module, characterized in that the module is shaped like this and is arranged symmetrically to each other on the outer surface of an insulating container.