JPH02126528A - Semiconductor integrated circuit - Google Patents

Abstract

PURPOSE:To eliminate a limit to an applicable scope and prevent an influence on other circuits by using such a structure that at least one wiring layer is film in two layers made up of conductors whose thermal expansion coefficients are different and a part of the film is movable and the conductor of another wiring layer is exposed at an upper part or a lower part of at least one portion of the movable part. CONSTITUTION:A part of a conductor layer made up of a high thermal expansion conductor 13 and a low thermal expansion conductor 12 formed on a semiconductor substrate 11 is a movable part 15, and at the upper part thereof, the conductor 14 of another wiring layer is exposed. The low thermal expansion conductor 22 and the high thermal expansion conductor 23 are different in thermal expansion coefficient, so that a movable part 25 moves up and down depending on a temperature change. A switching movement occurs between the movable part 25 and a conductor 24 by heating or cooling a conductor including the movable part 25. Thereby, it is possible to cause a nonelectric switching movement; and this is applicable to any portion in the circuit, and also can realize such a switch that no influence is exerted on any other circuits.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a switch for a semiconductor integrated circuit device, and particularly to a mechanical switch.

[Conventional technology]

Conventionally, this type of switch for a semiconductor integrated circuit device has been made up of an electronic circuit using a plurality of transistors and resistors.

[Problem to be solved by the invention]

Since the above-mentioned conventional 1-inch semiconductor integrated circuit device is composed of electronic circuits, it has the disadvantage that its applicable range is limited and that it affects the original circuit other than the switching operation.

[Means to solve the problem]

The switch for a semiconductor integrated circuit device of the present invention is a semiconductor integrated circuit device having a multilayer wiring structure.
A structure in which one wiring layer is a two-layer film consisting of conductors with different coefficients of thermal expansion, a part of which is movable, and a conductor of another wiring layer is exposed above or below at least a part of the movable part. have.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a sectional view of an embodiment of the present invention. In a semiconductor integrated circuit device having a multilayer wiring structure, a semiconductor substrate 11
A part of the conductor layer formed on the top formed of the high thermal expansion conductor 13 and the low thermal expansion conductor 12 becomes the movable part 15, and the conductor 14 of another wiring layer is exposed above the movable part 15. High thermal expansion conductor 13 and 1 μm thick A, f2 film low thermal expansion conductor 1
2 is a 1 μm thick Cr film, and the conductor 14 is a 2 μm thick Af! film. A membrane was used. The wiring interlayer film was a dielectric material, and the movable part 15 was created by isotropic dry etching.

The operation will be explained using FIG. Since the low thermal expansion conductor 22 and the high thermal expansion conductor 23 have different coefficients of thermal expansion IΔ, the movable part 25 moves up and down depending on the temperature. By heating and cooling the conductor including the movable part 25, a switching operation is performed between the movable part 25 and the conductor 24.

FIG. 3 is a sectional view of Example 2 of the present invention. In a semiconductor integrated circuit device having a multilayer wiring structure, a semiconductor substrate 31
2 of the high thermal expansion conductor 35 and the low thermal expansion conductor 34 formed above.
A conductor layer consisting of a high thermal expansion conductor 32 and a low thermal expansion conductor 3
Each of the two conductor layers of No. 3 has a movable portion 36 and a movable portion 37. When heat is applied, the movable part 36 moves upward,
In the movable part 37, by setting the distance between the movable parts that move downward to be wider than the movable distance of a single movable part, the switch is in the ○N state only when each movable part operates together, a kind of Performs an AND operation.

〔Effect of the invention〕

As explained above, the present invention enables non-electrical switching operation by using a movable two-layer film, and can be applied to any part of a circuit, while creating a switch that does not affect other circuits at all. There are effects that can be achieved.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is an operating state diagram of an embodiment of the invention, and FIG. 3 is a sectional view of a second embodiment of the invention. 11... Semiconductor substrate, 12... Low thermal expansion conductor, 13... High thermal expansion conductor, 14...
...Conductor, 15...Movable part, 21...
Semiconductor substrate, 22... High thermal expansion conductor, 23...
...Low thermal expansion conductor, 24...Conductor, 25
......Movable part, 31...Semiconductor substrate, 3
2... High thermal expansion conductor, 33... Low thermal expansion conductor, 34... Low thermal expansion conductor, 35...
...High thermal expansion conductor, 36...Movable part, ...Movable part.

Claims (1)

[Claims] In a semiconductor integrated circuit device having a multilayer wiring structure, at least one wiring layer is a two-layer film made of conductors having different coefficients of thermal expansion, a part of which is movable, and an upper or lower part of at least one part of the movable part. A semiconductor integrated circuit device having a switch having a structure in which a conductor of another wiring layer is exposed.