JPH02126444A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPH02126444A JPH02126444A JP8527089A JP8527089A JPH02126444A JP H02126444 A JPH02126444 A JP H02126444A JP 8527089 A JP8527089 A JP 8527089A JP 8527089 A JP8527089 A JP 8527089A JP H02126444 A JPH02126444 A JP H02126444A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- ratio
- zns
- magneto
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 229910052718 tin Inorganic materials 0.000 claims abstract description 7
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 11
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 230000005415 magnetization Effects 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000005083 Zinc sulfide Substances 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 54
- 239000011241 protective layer Substances 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
- G11B11/10589—Details
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、レーザ光を用い光熱磁気的に情報を記録し、
記録された磁気的情報を磁気光学効果を利用して読み出
す光磁気記録媒体に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention records information photothermomagnetically using laser light,
The present invention relates to a magneto-optical recording medium in which recorded magnetic information is read using the magneto-optic effect.
返本、書き換え可能な光磁気メモリの実用化が有望視さ
れている。この光磁気メモリに使用する光磁気記録媒体
は、例えばＴｂＦｅＣｏのような希土類を含む遷移金属
非晶質材料からなり、ディスク面に対して垂直方向に磁
化容易軸を有する垂直磁化薄膜を、ガラス、樹脂等の基
板上に形成したもので、情報の記録は上記磁性薄膜への
レーデ光による熱磁気書き込みにより行い、記録情報の
再生は磁気光学極力−（Ｋｅｒｒ）効果による上記磁性
薄膜からの反射光の偏光面回転（カー回転）を検出する
ことで行う。The practical application of magneto-optical memory that can be returned and rewritten is seen as promising. The magneto-optical recording medium used in this magneto-optical memory is made of a rare earth-containing transition metal amorphous material such as TbFeCo. It is formed on a substrate such as a resin. Information is recorded by thermomagnetic writing using Raded light on the magnetic thin film, and recorded information is reproduced using reflected light from the magnetic thin film using the magneto-optical (Kerr) effect. This is done by detecting the rotation of the polarization plane (Kerr rotation).
ところが、垂直磁化薄膜として現在用いられている磁性
薄膜のカー回転角θには０．３°〜０．４°であり、再
生光の記録ビットによる変調度は１％程度と小さく、再
生時の読み出しＣＮ比が十分でないことが問題となる。However, the Kerr rotation angle θ of magnetic thin films currently used as perpendicularly magnetized thin films is 0.3° to 0.4°, and the degree of modulation of the reproducing light due to the recording bits is as small as about 1%. The problem is that the read CN ratio is not sufficient.
再生ＣＮ比は、４０ｄＢ以上あれば媒体の誤り率が一定
になると報告されており、信頼性を高めるためには４５
ｄＢ以上であることが望ましいとされている。そこで、
磁性薄膜と基板の間にＳｉｎ、 ＭＷ等の誘電体膜を配
置して記録媒体の反射率を低くした時に、見かけ上カー
回転角が増大することを利用してＣＮ比を向上させる方
法が提案されている。It is reported that the error rate of the medium becomes constant if the playback CN ratio is 40 dB or more, and in order to increase reliability, it is necessary to
It is said that a value of dB or more is desirable. Therefore,
A method has been proposed to improve the CN ratio by utilizing the apparent increase in Kerr rotation angle when a dielectric film such as Sin or MW is placed between the magnetic thin film and the substrate to lower the reflectance of the recording medium. has been done.
しかし、光磁気記録媒体への情報の記録および消去は半
導体レーザを用いて行うが、情報の転送速度を増加させ
るためにディスク回転数を上昇させると、記録媒体上へ
の一点に照射されるレーザビームの照射時間が短くなり
、半導体レーザでは記録媒体温度が記録および消去の動
作点、すなわちキュリー温度まで上がらなくなる可能性
がある。However, information is recorded and erased on magneto-optical recording media using semiconductor lasers, but when the disk rotational speed is increased to increase the information transfer speed, the laser irradiates a single point on the recording medium. As the beam irradiation time becomes shorter, the temperature of the recording medium in a semiconductor laser may not rise to the operating point for recording and erasing, that is, the Curie temperature.
本発明の目的は、上記の問題を解決し、磁性薄膜と基板
の間に誘電体膜を配置して向上させた再生ＣＮ比を低下
させることなく、半導体レーザを用いて高いディスク回
転数における記録媒体への記録および消去が可能な光磁
気記録媒体を提供することにある。An object of the present invention is to solve the above-mentioned problems and record data at high disk rotational speeds using a semiconductor laser without reducing the reproduction CN ratio, which has been improved by disposing a dielectric film between a magnetic thin film and a substrate. An object of the present invention is to provide a magneto-optical recording medium that allows recording and erasing on the medium.
上記の課題の解決のために、本発明は、基板上に誘電体
層を介して基板面に垂直方向に磁化容易軸を有する磁性
薄膜を備えた光磁気記録媒体において、誘電体層がＴｉ
、 Ｃｒ、 Ｃｕ、 Ｉｎ、 Ｓｎ、 Ｐｔ、釦のうち
のいずれか１つを含むＺｎＳ膜であるものとする。In order to solve the above problems, the present invention provides a magneto-optical recording medium having a magnetic thin film having an axis of easy magnetization perpendicular to the substrate surface via a dielectric layer on a substrate, in which the dielectric layer is made of Ti.
, Cr, Cu, In, Sn, Pt, and button.
ＺｎＳにＴｉ、 Ｃｒ、 Ｃｕ、 Ｉｎ、 Ｓｎ、 Ｐ
ｔ、 Ｓｍを適量加えることにより、再生ＣＮ比を４５
ｄＢ以上に確保し、−力信号記録および消去のために必
要なレーザパワーを低下させることができる。ZnS with Ti, Cr, Cu, In, Sn, P
By adding appropriate amounts of t and Sm, the regenerated CN ratio can be increased to 45.
dB or more, and the laser power required for recording and erasing the -power signal can be reduced.
第１図は、本発明の実施例の光磁気記録媒体の構成を示
す断面図である。すなわち、ガラス、樹脂などからなる
透明基板１上に本発明に基づく各種誘電体層２を積層し
、その上にＴｂＦｅ、 ＴｂＦｅＣｏなどの非晶質磁性
薄膜３を形成し、さらに誘電体膜からなる保護層４を積
層したものである。FIG. 1 is a sectional view showing the structure of a magneto-optical recording medium according to an embodiment of the present invention. That is, various dielectric layers 2 based on the present invention are laminated on a transparent substrate 1 made of glass, resin, etc., an amorphous magnetic thin film 3 of TbFe, TbFeCo, etc. is formed thereon, and a dielectric film made of a dielectric film is further formed. The protective layer 4 is laminated.
以下に述べる実施例では基板１として十分に脱ガスを行
った５、２５インチのポリカーボネート板を用い、磁性
薄膜３としてはスパッタリング法で形成したＴｂｚｓＦ
ｅｓｓＣＯａまたはＴｔ］２ａＦｅｔｏｃＯｓ膜を用い
、保護層４としては誘電体層２と同じ材料を同じ方法で
１１００ｎの厚さに成膜した。In the examples described below, a 5.25-inch polycarbonate plate that has been sufficiently degassed is used as the substrate 1, and a TbzsF film formed by sputtering is used as the magnetic thin film 3.
The protective layer 4 was formed using the same material as the dielectric layer 2 to a thickness of 1100 nm using the same method as the dielectric layer 2, using an essCOa or Tt]2aFetocOs film.
実施例１：
誘電体層２としてＴｉを添加したＺｎＳを用いた実施例
である。誘電体層２の形成は、例えば１ｍｍＸ１ ｍｍ
Ｘ ４０ｍｍの寸法のＴ１片を埋め込んだＺｎＳ焼結
ターゲットを用い、アルゴンガス圧０．６Ｐａ、 ス
パッタパワー３００Ｗの条件下でのＲＦマグネトロンス
パッタリング法によりＴｉ４．５原子％を含むＺｎＳ誘
電体層２を９Ｑｎｍの厚さに形成した後、真空を破らず
にＴｂＦｅＣｏ合金ターゲットを用い、アルゴンガス圧
５．０Ｐａ、 スパッタパワー３００Ｗの条件下での
ＤＣマグネトロンスパッタリング法によりＴｔ１２ａＦ
ｅｔｏＣＯｓ薄膜を磁性薄膜３として７０ｎｍの厚さに
積層した。さらにその上に保護層４として同様の条件の
ＲＦマグネトロンスパッタリング法により上記誘電体層
２と同じ膜を１１００ｎの厚さに形成した。同様にして
ＺｎＳ焼結ターゲットに埋め込むＴ１片を変えるのみで
Ｔ１の含有量の異なる誘電体層２を有する光磁気記録媒
体を作成した。Ｔｉ４．５原子％を含むＺｎＳ誘電体層
を有する光磁気記録媒体においては、信号記録時の最適
記録レーザパワーＰＷＩＩＦＬＩ信号消去時の消去レー
ザパワーＰ。Example 1: This is an example in which Ti-added ZnS was used as the dielectric layer 2. The formation of the dielectric layer 2 is, for example, 1 mm x 1 mm.
Using a ZnS sintered target embedded with a T1 piece with a size of 40 mm, a ZnS dielectric layer 2 containing 4.5 at. After forming to a thickness of 9Q nm, Tt12aF was formed by DC magnetron sputtering using a TbFeCo alloy target without breaking the vacuum, under conditions of argon gas pressure of 5.0 Pa and sputtering power of 300 W.
An etoCOs thin film was laminated as the magnetic thin film 3 to a thickness of 70 nm. Furthermore, the same film as the dielectric layer 2 was formed thereon as a protective layer 4 to a thickness of 1100 nm by RF magnetron sputtering under the same conditions. Similarly, magneto-optical recording media having dielectric layers 2 with different T1 contents were created by simply changing the T1 piece embedded in the ZnS sintered target. In a magneto-optical recording medium having a ZnS dielectric layer containing 4.5 atomic % of Ti, the optimum recording laser power PWIIFLI when recording a signal is the erasing laser power P when erasing a signal.
および信号再生時のＣＮ比を測定したところ、ＰＶＯｐ
ｔ＋Ｐｌはともに５．５ｍ Ｗと十分低い値となり、ま
た再生ＣＮ比もディジタル記録に必要な４５ｄＢを大き
く上回る５２ｄＢが得られた。しかし、Ｔｉ１１．８原
子％を含むＺｎＳ誘電体層を有するものではＰ、。□。When we measured the CN ratio during signal reproduction, we found that PVOp
Both t+Pl were sufficiently low values of 5.5 mW, and a reproduction CN ratio of 52 dB was obtained, which far exceeded the 45 dB required for digital recording. However, in one with a ZnS dielectric layer containing 11.8 at.% of Ti, P. □.
Ｐｇはともに４．５ｍ Ｗと４．５原子％と余り変わら
ないが、再生ＣＮ比は４３ｄＢとなり４５ｄＢを下回る
。第２図にＴｌ含有量と再生ＣＮ比 ｐｗ。８．Ｐ８
との関係をそれぞれ線２１．２２．２３で示す。ＺｎＳ
誘電体層２に含有されるＴ１の量が０．２原子％を超え
るあたりから Ｐ、。、い Ｐ、が低下しはじめ、１０
．０原子％を超えると再生ＣＮ比が４５ｄＢ以下に劣化
する。Pg is both 4.5 mW and 4.5 atomic %, which are not much different, but the reproduction CN ratio is 43 dB, which is less than 45 dB. Figure 2 shows the Tl content and regenerated CN ratio pw. 8. P8
The relationships between the two are shown by lines 21, 22, and 23, respectively. ZnS
When the amount of T1 contained in the dielectric layer 2 exceeds 0.2 atomic %, P. , P starts to decrease, 10
．． If it exceeds 0 atomic %, the reproduction CN ratio will deteriorate to 45 dB or less.
特に、Ｔｌ含有量が１．０〜６．０原子％の範囲では、
再生ＣＮ比が５１〜５２ｄＢ、 Ｐ、、、い Ｐ。は５
．５〜６．９＋ｎ Ｗとほぼ均一な特性が実現できる。In particular, when the Tl content is in the range of 1.0 to 6.0 at%,
Reproduction CN ratio is 51-52dB, P. is 5
．． Almost uniform characteristics of 5 to 6.9+nW can be achieved.
実施例２：
誘電体層２としてＣｒを添加したＺｎＳを用いた実施例
である。実施例１で述べたのと同様な方法で、Ｔ１片の
代わりに１ｍｍ Ｘ ｌ ｍｍ ｘ４Ｑｎｏｎの寸法の
Ｃｒ片を埋め込んだＺｎＳ焼結ターゲットを用いた場合
はＺｎＳ薄膜にＣｒを２，９原子％含有させた９Ｑｎｍ
の厚さの誘電体層２を得、その他は実施例１と全く同じ
構成でＣｒ含有量の異なる誘電体層２を有する光磁気記
録媒体を作成した。Ｃｒ２．９原子％を含むＺｎＳ誘電
体層の場合、 ｐ、。、、は６．ＯｍＷ、 Ｐｇは５
．５ｍ Ｗと十分低い値となり、また再生ＣＮ比もディ
ジタル記録に必要な４５ｄＢを大きく上回る５２ｄＢが
得られた。しかし、Ｃｒ１１．５原子％を含むＺｎＳ誘
電体層を有するものでは Ｐｗ。ｐｌ＋Ｐ！はともに５
．０ｍ Ｗと余り変わらないが、再生ＣＮ比は４２ｄＢ
となり４５ｄＢを下回る。Example 2: This is an example in which ZnS doped with Cr was used as the dielectric layer 2. In the same method as described in Example 1, when a ZnS sintering target in which a Cr piece with dimensions of 1 mm x 1 mm x 4 Qnon was embedded instead of a T1 piece was used, 2.9 at.% of Cr was added to the ZnS thin film. 9Qnm contained
A magneto-optical recording medium having a dielectric layer 2 having a thickness of 100 Cr and a dielectric layer 2 having a different Cr content with the same structure as in Example 1 was otherwise produced. For a ZnS dielectric layer containing 2.9 at.% Cr, p. ,, is 6. OmW, Pg is 5
．． A sufficiently low value of 5 mW was obtained, and a reproduction CN ratio of 52 dB, which far exceeds the 45 dB required for digital recording, was obtained. However, in the case of a ZnS dielectric layer containing 11.5 at.% of Cr, Pw. pl+P! are both 5
．． Although it is not much different from 0mW, the reproduction CN ratio is 42dB.
This is less than 45 dB.
第３図にＣｒ含有量と再生ＣＮ比＋ Ｐｗａｐｔ＋
Ｐｔ との関係をそれぞれ線３１．３２．３３で示す
。ＺｎＳ誘電体層２に含有されるＣｒＯ量が０．２原子
％を超えるあたりからＰ、。□、Ｐａが低下しはじめ、
１０．０原子％を超えると再生ＣＮ比が４５ｄＢ以下に
劣化する。Figure 3 shows the Cr content and regenerated CN ratio + Pwapt +
The relationship with Pt is shown by lines 31, 32, and 33, respectively. When the amount of CrO contained in the ZnS dielectric layer 2 exceeds 0.2 atomic %, P. □, Pa begins to decrease,
If it exceeds 10.0 atomic %, the reproduced CN ratio deteriorates to 45 dB or less.
特にＣｒ含有量が１．０〜６．０原子％の範囲では、再
生ＣＮ比が５１〜５２［ＩＢ−Ｐｗ。−ｔ、 Ｐｉは
５．５〜６．０ｍ Ｗとほぼ均一な特性が実現できる。In particular, when the Cr content is in the range of 1.0 to 6.0 at%, the regenerated CN ratio is 51 to 52 [IB-Pw. -t, Pi is 5.5 to 6.0 mW, and almost uniform characteristics can be achieved.
実施例３：
誘電体層２としてＣｕを添加したＺｎＳを用いた実施例
である。実施例１で述べたのと同様な方法で、Ｔ１片の
代わりにｌ ｍｍ Ｘ ｌ ｎ＋＋＋＋ Ｘ４Ｑｍｍの
寸法のＣｕ片を埋め込んだＺｎＳ焼結ターゲットを用い
た場合はＺｎＳ薄膜にＣｕを３．０原子％含有させた９
０ｎｍの厚さの誘電体層２を得、その他は実施例１と全
く同じ構成でＣｕ含有量の異なる誘電体層２を有する光
磁気記録媒体を作成した。Ｃｕ３．０原子％を含むＺｎ
Ｓ誘電体層の場合、 Ｐ １１６ｐｔ＋ Ｐｌ＋はと
もに５．５ｍ Ｗと十分低い値となり、また再生ＣＮ比
もディジタル記録に必要な４５ｄＢを大きく上回る５２
ｄＢが得られた。Example 3: This is an example in which ZnS added with Cu was used as the dielectric layer 2. In the same method as described in Example 1, when a ZnS sintering target in which a Cu piece with a size of l mm Contained 9%
A dielectric layer 2 having a thickness of 0 nm was obtained, and a magneto-optical recording medium having the dielectric layer 2 having a different Cu content was produced with the other configuration being exactly the same as in Example 1. Zn containing 3.0 atomic% of Cu
In the case of the S dielectric layer, P116pt+Pl+ are both sufficiently low values of 5.5 mW, and the reproduction CN ratio is also much higher than the 45 dB required for digital recording52
dB was obtained.
しかし、Ｃｕ１１．５原子％を含むＺｎＳ誘電体層を有
するものでは Ｐ、。ｐＬ＋Ｐｉはともに５． Ｑｍ
Ｗと余り変わらないが、再生ＣＮ比は４３ｄＢとなり４
５ｄＢを下回る。第４図にＣｕ含有量と再生ＣＮ比、
Ｐｖｏｐｔ＋Ｐｔとの関係をそれぞれ線４１．４２．
４３で示す。ＺｎＳ誘電体層２に含有される［Ｕの量が
０．２原子％を超えるあたりから ＰＷｌｌｐＬ＋ＰＩ
＋が低下しはじめ、１０．０原子％を超えると再生ＣＮ
比が４５ｄＢ以下に劣化する。特にＣｕ含有量が１．０
〜６．０原子％の範囲では、再生ＣＮ比が５１〜５２ｄ
Ｂ、 Ｐ、、、ｔ、 Ｐｇは５．５〜６、Ｑ＋ｎ Ｗ
とほぼ均一な特性が実現できる。However, in one with a ZnS dielectric layer containing 11.5 at.% of Cu, P. Both pL+Pi are 5. Qm
Although it is not much different from W, the reproduction CN ratio is 43 dB, which is 4
Less than 5dB. Figure 4 shows Cu content and recycled CN ratio.
The relationship with Pvopt+Pt is shown by lines 41, 42, respectively.
43. From the point where the amount of U contained in the ZnS dielectric layer 2 exceeds 0.2 at% PWllpL+PI
When + starts to decrease and exceeds 10.0 atomic%, regenerated CN
The ratio deteriorates to 45 dB or less. Especially when the Cu content is 1.0
In the range of ~6.0 at%, the regenerated CN ratio is 51~52d
B, P, , t, Pg is 5.5 to 6, Q+n W
Almost uniform characteristics can be achieved.
実施例４：
誘電体Ｎ２として１Ｇを添加したＺｎＳを用いた実施例
である。実施例１で述べたのと同様な方法で、Ｔ１片の
代わりにｌ ｍｍ ｘ ｌ ｍｍ Ｘ４（１ｍｍの寸法
の１Ｇ片を埋め込んだＺｎＳ焼結ターゲットを用いた場
合はＺｎＳ薄膜にＩｎを２．５原子％含有させた９Ｑｒ
＋＋ｎの厚さの誘電体層２を得、その他は実施例１と全
く同じ構成でＩｎ含有量の異なる誘電体層２を有する光
磁気記録媒体を作成した。Ｉｎ２．５原子％を含むＺｎ
Ｓ誘電体層の場合、 Ｐ ｗｇｐｔｌ ｐＨはともに
５．５ｍＷと十分低い値となり、また再生ＣＮ比もディ
ジタル記録に必要な４５ｄＢを大きく上回る５２ｄＢが
得られた。しかし、Ｉｎ１１．５原子％を含むｌｎＳ誘
電体層を存するものでは Ｐ、。、い Ｐｗはともに５
． Ｑｍ Ｗと余り変わらないが、再生ＣＮ比は４２．
８ｄＢとなり４５ｄＢを下回る。第５図にＩｎ含有量と
再生ＣＮ比、Ｐｗ。、。Example 4: This is an example using ZnS doped with 1G as the dielectric N2. In the same manner as described in Example 1, when using a ZnS sintering target in which a 1G piece of 1 mm x 1 mm size was embedded instead of a T1 piece, 2.5 mm of In was added to the ZnS thin film. 9Qr containing 5 at%
A dielectric layer 2 having a thickness of ++n was obtained, and a magneto-optical recording medium having the same structure as in Example 1 except for the dielectric layer 2 having a different In content was produced. Zn containing 2.5 atomic% In
In the case of the S dielectric layer, both P, wgptl, and pH were sufficiently low values of 5.5 mW, and a reproduction CN ratio of 52 dB, which far exceeded the 45 dB required for digital recording, was obtained. However, in those with an lnS dielectric layer containing 11.5 at.% of InP,. , Pw are both 5
．． Although it is not much different from Qm W, the reproduction CN ratio is 42.
8dB, which is less than 45dB. Figure 5 shows the In content, regenerated CN ratio, and Pw. ,.
Ｐ、とめ関係をそれぞれ線５１．５２．５３で示す。Ｚ
ｎＳ透電体層２に含有されるＩｎの量が０．２原子％を
超えるあたりから Ｐ、。ＰＬ＋ ｐｌが低下しはじ
め、１０．０原子％を超えると再生ＣＮ比が４５ｄＢ以
下に劣化する。特にＩｎ含を量が１．０〜６．０原子％
の範囲では、再生ＣＮ比が５１〜５２ｄＢ、 Ｐｗｅｐ
イＰ、は５．５〜５、 Ｑｍ Ｗとほぼ均一な特性が実
現できる。P, the stop relationship is shown by lines 51, 52, and 53, respectively. Z
When the amount of In contained in the nS conductive layer 2 exceeds 0.2 atomic %, P. When PL+ pl begins to decrease and exceeds 10.0 atomic %, the reproduced CN ratio deteriorates to 45 dB or less. In particular, the amount of In content is 1.0 to 6.0 at%
In the range of , the reproduction CN ratio is 51-52 dB, Pwep
P is 5.5 to 5, Qm W, and almost uniform characteristics can be achieved.
実施例５：
誘電体層２としてＳｎを添加したＺｎＳを用いた実施例
である。実施例１で述べたのと同様な方法で、Ｔｉ片の
代わりにｌ＋ｎｍ Ｘ ｌ ｍｍ Ｘ４Ｑｍｍの寸法の
Ｓｎ片を埋め込んだＺｎＳ焼結ターゲットを用いた場合
はＩｎｓ薄膜に３ｎを３．０原子％含有させた９０ｎｍ
の厚さの誘電体層２を得、その他は実施例１と全く同じ
構成でＳｎ含有量の異なる誘電体層２を有する光磁気記
録媒体を作成した。Ｓｎ３． Ｑ原子％を含む２ｎＳ誘
電体層の場合、 Ｐ、。、い ＰＥはともに５．５＋ｎ
Ｗと十分低い値となり、また再生ＣＮ比もディジタル
記録に必要な４５ｄＢを大きく上回る５２．４ｄＢが得
られた。Example 5: This is an example in which ZnS added with Sn was used as the dielectric layer 2. In the same method as described in Example 1, when using a ZnS sintered target in which Sn pieces with dimensions of 1+nm x 1 mm x 4Qmm were embedded instead of Ti pieces, 3.0 atomic % of 3n was added to the Ins thin film. 90nm contained
A magneto-optical recording medium having a dielectric layer 2 having a thickness of 1,000,000 yen and a dielectric layer 2 having a different Sn content with the same structure as in Example 1 was otherwise produced. Sn3. For a 2nS dielectric layer containing Q atomic %, P,. , PE is both 5.5+n
W, a sufficiently low value, and a reproduction CN ratio of 52.4 dB, which far exceeds the 45 dB required for digital recording.
しかし、５ｎ１１．Ｑ原子％を含むＺｎＳ 誘電体層を
有するものでは Ｐ、。８．Ｐ９はともに５．０＋ｎ
Ｗと余り変わらないが、再生ＣＮ比は４０ｄＢとなり４
５ｄＢを下回る。第６図にＳｎ含有量と再生ＣＮ比、Ｐ
ｗ。２．。However, 5n11. In those with a ZnS dielectric layer containing Q atomic % P,. 8. Both P9 are 5.0+n
Although it is not much different from W, the reproduction CN ratio is 40 dB, which is 4
Less than 5dB. Figure 6 shows the Sn content and regenerated CN ratio, P
lol. 2. .
Ｐ、との関係をそれぞれ線６１．６２．６３で示す。Ｚ
ｎＳ誘電体層２に含有されるＳｎの量が０．２原子％を
超えるあたりから Ｐ ｗ＋ｌ＋ＰＬ＋ ＰＥが低下
しはじめ、１０．０原子％を超えると再生ＣＮ比が４５
ｄＢ以下に劣化する。特にＳｎ含有量が１．０〜６．０
原子％の範囲では、再生ＣＮ比が５１〜５２ｄＢＳＰ、
０ｐｃ、 Ｐｉは５．５〜６、 Ｑｍ Ｗとほぼ均一
な特性が実現できる。The relationships with P, are shown by lines 61, 62, and 63, respectively. Z
When the amount of Sn contained in the nS dielectric layer 2 exceeds 0.2 at%, P w + l + PL + PE begins to decrease, and when it exceeds 10.0 at%, the regenerated CN ratio becomes 45
It deteriorates below dB. Especially when the Sn content is 1.0 to 6.0
In the atomic% range, the reproduction CN ratio is 51-52 dBSP,
0pc, Pi 5.5 to 6, QmW, and almost uniform characteristics can be achieved.
実施例６：
誘電体層２としてｐｔを添加したＺｎＳを用いた実施例
である。実施例１で述べたのと同様な方法で、Ｔｉ片の
代わりにｌ ｍｍ ｘ ｌ ｍ＋ｎ ｘ４Ｑ＋ｎｍの寸
法のＰｔ片を埋め込んだＺｎＳ焼結ターゲットを用いた
場合はＺｎＳ薄膜にｐｔを２．５原子％含有させた９Ｑ
ｎｍの厚さの誘電体層２を得、その他は実施例１と全く
同じ構成でｐｔ含有量の異なる誘電体層２を有する光磁
気記録媒体を作成した。Ｐｔ２．５原子％を含むＺｎＳ
誘電体層の場合、 ｐｗｏｐＬは６．ＯｍＷ、 ＰＩ
は５．５ｍ Ｗと十分低い−となり、また再生ＣＮ比も
ディジタル記録に必要な４５ｄＢを大きく上回る５２ｄ
Ｂが得られた。Example 6: This is an example in which ZnS doped with pt was used as the dielectric layer 2. In the same method as described in Example 1, when using a ZnS sintering target in which Pt pieces with dimensions of l mm x l m + n x 4 Q + nm were embedded instead of Ti pieces, 2.5 atoms of pt were added to the ZnS thin film. 9Q containing %
A dielectric layer 2 with a thickness of nm was obtained, and a magneto-optical recording medium having the dielectric layer 2 having a different pt content was produced with the other configuration being exactly the same as in Example 1. ZnS containing 2.5 at.% of Pt
For dielectric layer, pwopL is 6. OmW, P.I.
is sufficiently low at 5.5 mW, and the playback CN ratio is 52 dB, which far exceeds the 45 dB required for digital recording.
B was obtained.
しかし、Ｐｔ１１． Ｏ原子％を含むＺｎＳ誘電体層を
存するものでは ＰｗＯＰ’は５．ＯｍＷ、Ｐ敢は４．
５ｍ Ｗと余り変わらないが、再生ＣＮ比は４２ｄＢと
なり４５ｄＢを下回る。第７図にＰｔ含有量と再生ＣＮ
比、Ｐｗ。ｐｕ。However, Pt11. In the case where a ZnS dielectric layer containing O atomic % is present, PwOP' is 5. OmW, P is 4.
Although it is not much different from 5 mW, the reproduction CN ratio is 42 dB, which is less than 45 dB. Figure 7 shows Pt content and recycled CN.
ratio, Pw. pu.
Ｐ、との関係をそれぞれ線７１．７２．７３で示す。Ｚ
ｎＳ誘電体層２に含有されるｐｔの量が０．２原子％を
超えるあたりから Ｐ、。ｐｔ＋Ｐｉが低下しはじめ、
１０．０原子％を超えると再生ＣＮ比が４５ｄＢ以下に
劣化する。特にＰｔ含有量が１．０〜６．０原子％の範
囲では、再生ＣＮ比が５１〜５２ｄＢ、 Ｐ、、、、、
Ｐｉは５．５〜６．０ＩＩＩＷとほぼ均一な特性が
実現できる。The relationships with P, are shown by lines 71, 72, and 73, respectively. Z
When the amount of pt contained in the nS dielectric layer 2 exceeds 0.2 atomic %, P. pt+Pi begins to decrease,
If it exceeds 10.0 atomic %, the reproduced CN ratio deteriorates to 45 dB or less. In particular, when the Pt content is in the range of 1.0 to 6.0 at%, the reproduction CN ratio is 51 to 52 dB, P...
Pi has substantially uniform characteristics of 5.5 to 6.0IIIW.
実施例７：
誘電体層２としてＳｍを添加したＺｎＳを用いた実施例
である。実施例１で述べたのと同様な方法で、Ｔ１片の
代わりに１ｍｍ Ｘ ｌ ｍｍ ｘ４Ｑｍｍの寸法の軸
片を埋め込んだＺｎＳ焼結ターゲットを用いた場合はＺ
ｎＳ薄膜にＳｍを３．５原子％含有させた９０ｎｍの厚
さの誘電体層２を得、その他は実施例１と全く同じ構成
でＳｍ含有量の異なる誘電体層２を有する光磁気記録媒
体を作成した。Ｓｍ３．５原子％を含むＺｎＳ誘電体層
の場合、 Ｐ、。、い Ｐ２はともに４．５ｍ Ｗと十
分低い値となり、また再生ＣＮ比もディジタル記録に必
要な４５６ｅを大きく上回る５０ｄＢが得られた。しか
し、Ｓｍ１１．Ｏ原子％を含むＺｎＳ誘電体層を有する
ものでは Ｐ、。ｐｔ＋Ｐｉはともに４．Ｑｍ Ｗと余
り変わらないが、再生ＣＮ比は４０ｄＢとなり４５ｄＢ
を下回る。Example 7: This is an example in which ZnS doped with Sm was used as the dielectric layer 2. In the same method as described in Example 1, when a ZnS sintered target in which a shaft piece with dimensions of 1 mm x l mm x 4 Q mm was embedded instead of the T1 piece was used, Z
Magneto-optical recording medium having a dielectric layer 2 with a thickness of 90 nm in which an nS thin film contains 3.5 at% of Sm, and the dielectric layer 2 has the same structure as in Example 1 except that the dielectric layer 2 has a different Sm content. It was created. For a ZnS dielectric layer containing 3.5 at.% of Sm, P,. , and P2 were both sufficiently low values of 4.5 mW, and a reproduction CN ratio of 50 dB, which far exceeds the 456e required for digital recording, was obtained. However, Sm11. For those with a ZnS dielectric layer containing atomic percent O, P. Both pt+Pi are 4. Qm It is not much different from W, but the reproduction CN ratio is 40dB and 45dB.
below.
第８図にＳｍ含有量と再生ＣＮ比、Ｐｗ。２０．Ｐｔと
の関係をそれぞれ線８１．８２．８３で示す。ＺｎＳ誘
電体層２に含有されるＳｍの量が０．３原子％を超える
あたりからＰ、。Ｐｔ＋Ｐｉが低下しはじめ、７．５原
子％を超えると再生ＣＮ比が４５ｄＢ以下に劣化する。Figure 8 shows the Sm content, regenerated CN ratio, and Pw. 20. The relationship with Pt is shown by lines 81, 82, and 83, respectively. When the amount of Sm contained in the ZnS dielectric layer 2 exceeds 0.3 atomic %, P. When Pt+Pi begins to decrease and exceeds 7.5 atomic %, the reproduction CN ratio deteriorates to 45 dB or less.
特に軸合有量が１．５〜６．０原子％の範囲では、再生
ＣＮ比が４９〜５０ｄＢ 、 Ｐ−０ｐｔ 、 Ｐ
＊は４．０〜５． Ｑｍ Ｗとほぼ均一な特性が実現
できる。In particular, when the axial content is in the range of 1.5 to 6.0 at%, the reproduction CN ratio is 49 to 50 dB, P-0pt, P
* is 4.0-5. Qm W and almost uniform characteristics can be achieved.
垂直磁化膜を磁性薄膜とする光磁気記録媒体において、
基板と磁性薄膜との間に誘電体層としてＺｎＳ膜にＴｉ
、 Ｃｒ、 Ｃｕ、 Ｉｎ、 Ｓｎ、 Ｐｔ、釦のう
ちのいずれが１つを含有させることにより、信号再生時
の再生ＣＮ比が十分大きく、かつ記録感度、消去特性に
すぐれた光磁気記録媒体が得られ、ディスク回転数を上
げても半導体レーザの照射による記録および消去が可能
になった。In a magneto-optical recording medium in which a perpendicularly magnetized film is a magnetic thin film,
Ti is added to the ZnS film as a dielectric layer between the substrate and the magnetic thin film.
By containing one of , Cr, Cu, In, Sn, Pt, and button, a magneto-optical recording medium with a sufficiently large reproduction CN ratio during signal reproduction and excellent recording sensitivity and erasing characteristics can be obtained. As a result, recording and erasing by semiconductor laser irradiation became possible even when the disk rotational speed was increased.
第１図は本発明の一実施例の光磁気記録媒体の断面構造
図、第２図、第３図、第４図、第５図。
第６図、第７図、第８図はそれぞれＺｎＳ膜中のＴＩ。
Ｃｒ、 Ｃｕ、 Ｉｎ、 Ｓｎ、 Ｐｔ、 Ｓｍの含有
量と再生ＣＮ比。
最適記録レーデパワー、消去レーザパワーとの関係線図
である。
１ 基板、２・誘電体層、３ 磁性薄膜、４第
図
Ｔ１含有量（原子％）
第
図
Ｃ「含有量（原子％）
第
図
Ｃｕ含有量（原子％）
第
図
Ｉｎ含有量（原子％）
第
図
Ｓｎ含有量（ｙＡ子％）
第
図
ｐｔ含有量（ｆ！Ａ子％）
第
図
Ｓｍ含有量（原子％）
第８図FIG. 1 is a cross-sectional structural diagram of a magneto-optical recording medium according to an embodiment of the present invention, and FIGS. 2, 3, 4, and 5. FIGS. 6, 7, and 8 show TI in a ZnS film, respectively. Contents of Cr, Cu, In, Sn, Pt, and Sm and regenerated CN ratio. FIG. 3 is a relationship diagram between optimum recording laser power and erasing laser power. 1 Substrate, 2 Dielectric layer, 3 Magnetic thin film, 4 Figure T1 content (atomic %) Figure C content (atomic %) Figure Cu content (atomic %) Figure In content (atomic %) ) Fig. Sn content (yA%) Fig. PT content (f!A%) Fig. Sm content (atomic%) Fig. 8
Claims (1)
容易軸を有する磁性薄膜を備えたものにおいて、前記誘
電体層がチタン、クロム、銅、インジウム、すず、白金
、サマリウムのうちのいずれか１つを含む硫化亜鉛膜で
あることを特徴とする光磁気記録媒体。1) A magnetic thin film having an axis of easy magnetization perpendicular to the substrate surface on a substrate via a dielectric layer, in which the dielectric layer is made of titanium, chromium, copper, indium, tin, platinum, or samarium. A magneto-optical recording medium characterized by being a zinc sulfide film containing any one of the following.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8527089A JPH02126444A (en) | 1988-07-04 | 1989-04-04 | Magneto-optical recording medium |
| NL8901688A NL8901688A (en) | 1988-07-04 | 1989-07-03 | MAGNETO-OPTICAL STORAGE MEDIUM. |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16660588 | 1988-07-04 | ||
| JP63-166605 | 1988-07-04 | ||
| JP8527089A JPH02126444A (en) | 1988-07-04 | 1989-04-04 | Magneto-optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02126444A true JPH02126444A (en) | 1990-05-15 |
Family
ID=26426285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8527089A Pending JPH02126444A (en) | 1988-07-04 | 1989-04-04 | Magneto-optical recording medium |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH02126444A (en) |
| NL (1) | NL8901688A (en) |
-
1989
- 1989-04-04 JP JP8527089A patent/JPH02126444A/en active Pending
- 1989-07-03 NL NL8901688A patent/NL8901688A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| NL8901688A (en) | 1990-02-01 |
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