JPH02265043A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPH02265043A JPH02265043A JP8525189A JP8525189A JPH02265043A JP H02265043 A JPH02265043 A JP H02265043A JP 8525189 A JP8525189 A JP 8525189A JP 8525189 A JP8525189 A JP 8525189A JP H02265043 A JPH02265043 A JP H02265043A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- magneto
- film
- recording medium
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052772 Samarium Inorganic materials 0.000 claims abstract 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims abstract 2
- 230000005415 magnetization Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、レーザ光を用い光熱磁気的に情報を記録し、
記録された磁気的情報を磁気光学効果を利用して読み出
す光磁気記録媒体に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention records information photothermomagnetically using laser light,
The present invention relates to a magneto-optical recording medium in which recorded magnetic information is read using the magneto-optic effect.
近年、書き換え可能な光磁気メモリの実用化が有望視さ
れている。この光磁気メモリに使用する光磁気記録媒体
は、例えばTbFeCoのような希土類を含む遷移金属
非晶質材料からなり、ディスク面に対して垂直方向に磁
化容易軸を有する垂直磁化薄膜を、ガラス、樹脂等の基
板上に形成したもので、情報の記録は上記磁性薄膜への
レーザ光による熱磁気書き込みにより行い、記録情報の
再生は磁気光学極力−(1(err)効果による上記磁
性薄膜からの反射光の偏光面回転(カー回転)を検出す
ることで行う。In recent years, the practical application of rewritable magneto-optical memory has been viewed as promising. The magneto-optical recording medium used in this magneto-optical memory is made of a rare earth-containing transition metal amorphous material such as TbFeCo. It is formed on a substrate such as resin, and information is recorded by thermomagnetic writing using a laser beam on the magnetic thin film, and the recorded information is reproduced from the magnetic thin film by magneto-optical maximum - (1 (err) effect). This is done by detecting the rotation of the polarization plane (Kerr rotation) of reflected light.
ところが、垂直磁化薄膜として現在用いられている磁性
薄膜のカー回転角θには0.3°〜0.4°であり、再
生光の記録ビットによる変調度は1%程度と小さく、再
生時の読み出しCN比が十分でないことが問題となる。However, the Kerr rotation angle θ of magnetic thin films currently used as perpendicularly magnetized thin films is 0.3° to 0.4°, and the degree of modulation of the reproducing light due to the recording bits is as small as about 1%. The problem is that the read CN ratio is not sufficient.
再生CN比は、40dB以上あれば媒体の誤り率が一定
になると報告されており、信頼性を高めるためには45
dB以上であることが望ましいとされている。そこで、
磁性薄膜と基板の間にSin、 へIN等の誘電体膜を
配置して記録媒体の反射率を低くした時に、見かけ上カ
ー回転角が増大することを利用してCN比を向上させる
方法が提案されている。It is reported that the error rate of the medium becomes constant if the playback CN ratio is 40 dB or more, and in order to increase reliability, it is necessary to
It is said that a value of dB or more is desirable. Therefore,
There is a method of improving the CN ratio by utilizing the apparent increase in Kerr rotation angle when the reflectance of the recording medium is lowered by placing a dielectric film such as Sin or In between the magnetic thin film and the substrate. Proposed.
しかし、光磁気記録媒体への情報の記録および消去は半
導体レーザを用いて行うが、情報の転送速度を増加させ
るためにディスク回転数を上昇させると、記録媒体上へ
の一点に照射されるレーザビームの照射時間が短くなり
、半導体レーザては記録媒体温度が記録および消去の動
作点、すなわちキュリー温度まで上がらなくなる可能性
がある。However, information is recorded and erased on magneto-optical recording media using semiconductor lasers, but when the disk rotational speed is increased to increase the information transfer speed, the laser irradiates a single point on the recording medium. As the beam irradiation time becomes shorter, the temperature of the recording medium of a semiconductor laser may not rise to the operating point for recording and erasing, that is, the Curie temperature.
本発明の目的は、上記の問題を解決し、磁性薄膜と基板
の間に誘電体膜を配置して向上させた再生CN比を低下
させることなく、半導体レーザを用いて高いディスク回
転数における記録媒体への記録および消去が可能な光磁
気記録媒体を提供することにある。An object of the present invention is to solve the above-mentioned problems and record data at high disk rotational speeds using a semiconductor laser without reducing the reproduction CN ratio, which has been improved by disposing a dielectric film between a magnetic thin film and a substrate. An object of the present invention is to provide a magneto-optical recording medium that allows recording and erasing on the medium.
上記の課題の解決のために、本発明は、基板上に誘電体
層を介して基板面に垂直方向に磁化容易軸を有する磁性
薄膜を備えた光磁気記録媒体において、誘電体層が釦を
含むへIN膜であるものとする。In order to solve the above problems, the present invention provides a magneto-optical recording medium having a magnetic thin film having an axis of easy magnetization perpendicular to the substrate surface via a dielectric layer on a substrate. It is assumed that the film is an IN film.
八1NにSmを適量加えることにより、再生CN比を4
!MB以上に確保し、−力信号記録および消去のために
必要なレーザパワーを低下させることができる。By adding an appropriate amount of Sm to 81N, the regenerated CN ratio can be increased to 4.
! It is possible to secure more than MB and reduce the laser power required for recording and erasing the force signal.
第1図は、本発明の実施例の光磁気記録媒体の構成を示
す断面図である。すなわち、ガラス、樹脂などからなる
透明基板1上に本発明に基づく各種誘電体層2を積層し
、その上にTbFe、 TbFeCoなどの非晶質磁性
薄膜3を形成し、さらに誘電体膜からなる保護層4を積
層したものである。FIG. 1 is a sectional view showing the structure of a magneto-optical recording medium according to an embodiment of the present invention. That is, various dielectric layers 2 based on the present invention are laminated on a transparent substrate 1 made of glass, resin, etc., an amorphous magnetic thin film 3 of TbFe, TbFeCo, etc. is formed thereon, and a dielectric film made of a dielectric film is further formed. The protective layer 4 is laminated.
以下は述べる実施例では基板1として十分に脱ガスを行
った5、25インチのポリカーボネート板を用い、磁性
薄膜3としてはスパンタリング法で形成したTb23F
es、CO8またはTb24Fe7oCO6膜を用い、
保護層4としては誘電体層2と同じ材料を同じ方法で1
100nの厚さに成膜した。In the example described below, a 5.25-inch polycarbonate plate that has been sufficiently degassed is used as the substrate 1, and a Tb23F film formed by a sputtering method is used as the magnetic thin film 3.
Using es, CO8 or Tb24Fe7oCO6 film,
The protective layer 4 is made of the same material as the dielectric layer 2 using the same method.
A film was formed to a thickness of 100 nm.
実施例]:
誘電体層2としてSmを添加したAINを用いた実施例
である。誘電体層2の形成は、例えば1mmX]mmX
40mmの寸法のSm片を埋め込んだへIN焼結ターゲ
ットを用い、 アルゴンガス圧0.6Pa 、 スパ
ッタパワー300Wの条件下でのRFマグネトロンスパ
ッタリンク法によりSm1.8原子%を含むAIN誘電
体層2を9Qnmの厚さに形成した後、真空を破らずに
TbFeCo合金ターゲットを用い、アルゴンガス圧5
、 QPa 、スパッタパワー300 Wの条件下での
DCマグネトロンスパッタリング法によりTb24Fe
7oC06薄膜を磁性薄膜3として70nmの厚さに積
層した。Example]: This is an example in which AIN added with Sm is used as the dielectric layer 2. The formation of the dielectric layer 2 is, for example, 1 mmX] mmX
An AIN dielectric layer 2 containing 1.8 atomic % of Sm was formed by the RF magnetron sputter link method under the conditions of argon gas pressure of 0.6 Pa and sputtering power of 300 W using an IN sintered target embedded with Sm pieces with a size of 40 mm. After forming to a thickness of 9 Q nm, a TbFeCo alloy target was used without breaking the vacuum, and an argon gas pressure of 5
, QPa, and Tb24Fe by DC magnetron sputtering under the conditions of sputtering power of 300 W.
A 7oC06 thin film was laminated to a thickness of 70 nm as the magnetic thin film 3.
さらにその上に保護層4として同様の条件のRFマグネ
トロンスパッタリング法により上記誘電体層2と同じ膜
を1100nの厚さに形成した。同様にしてAIN焼結
焼結クーゲット埋め込むSm片を変えるのみでSmの含
有量の異なる誘電体層2を有する光磁気記録媒体を作成
した。Sml、8原子%を含むへIN誘電体層を有する
光磁気記録媒体においては、信号記録時の最適記録レー
ザパワーP wOpt+ 信号消去時の消去レーザパ
ワーPa、 及び信号再生時のCN比を測定したとこ
ろ、 PWOpL+PRはともに5. Qmlj と十
分低い値となり、また再生CN比もディジタル記録に必
要な45dBを大きく」−回る50dBが得られた。し
かし、Sm9,5原子%を含むAIN誘電体層を有する
ものではPwaptは5.0m1ll、 PCは4、
OmWと1.8原子%と余り変わらないが、再生CN
比は41dBとなり45dBを下回る。第2図にSm含
有量き再生CN比、 Pwopt+ PEとの関係を
それぞれ線21、22.23で示す。A]N誘電体層2
に含有されるSmの量が0.3原子%を超えるあたりが
らPw。1.。Furthermore, the same film as the dielectric layer 2 was formed thereon as a protective layer 4 to a thickness of 1100 nm by RF magnetron sputtering under the same conditions. Similarly, magneto-optical recording media having dielectric layers 2 with different Sm contents were produced by simply changing the Sm pieces embedded in the AIN sintered cuget. In a magneto-optical recording medium having a HIN dielectric layer containing 8 at% Sml, the optimum recording laser power P wOpt+ during signal recording, the erasing laser power Pa during signal erasing, and the CN ratio during signal reproduction were measured. However, both PWOpL+PR are 5. Qmlj, a sufficiently low value, and a reproduction CN ratio of 50 dB, which is much higher than the 45 dB required for digital recording. However, in the case of an AIN dielectric layer containing 9.5 at% of Sm, Pwapt is 5.0 ml, PC is 4,
Although it is not much different from OmW at 1.8 at%, the recycled CN
The ratio is 41 dB, which is less than 45 dB. In FIG. 2, the relationship between the Sm content and the regenerated CN ratio and Pwopt+PE is shown by lines 21 and 22.23, respectively. A] N dielectric layer 2
When the amount of Sm contained in Pw exceeds 0.3 at%. 1. .
P、が低下しはじめ、7.5原子%を超えると再生CN
比が45dB以下に劣化する。とくに、Sm含有量が1
.5〜5.5原子%の範囲では、再生CN比が49〜5
0dB、 P、vo、t、 P、は4.0〜5. O
mWとほぼ均一な特性が実現できる。When P begins to decrease and exceeds 7.5 at%, regenerated CN
The ratio deteriorates to 45 dB or less. In particular, when the Sm content is 1
.. In the range of 5 to 5.5 at%, the regenerated CN ratio is 49 to 5.
0dB, P, vo, t, P is 4.0 to 5. O
Almost uniform characteristics of mW can be achieved.
垂直磁化膜を磁性薄膜とする光磁気記録媒体において、
基板と磁性薄膜との間に誘電体層としてAIN膜にSm
を0.3〜7.5原子%、好ましくは1.5〜5.5原
子%含有させることにより、信号再生時の再生CN比が
十分大きく、がっ記録感度、消去特性にすぐれた光磁気
記録媒体が得られ、ディスク回転数を上げても半導体レ
ーザの照射による記録および消去が可能になった。In a magneto-optical recording medium in which a perpendicularly magnetized film is a magnetic thin film,
Sm is added to the AIN film as a dielectric layer between the substrate and the magnetic thin film.
By containing 0.3 to 7.5 at.%, preferably 1.5 to 5.5 at.% of A recording medium was obtained, and recording and erasing by semiconductor laser irradiation became possible even when the disk rotation speed was increased.
第1図は本発明の一実施例の光磁気記録媒体の断面構造
図、第2図はAIN膜中のSmの含有量と再生CN比、
最適記録レーザパワー 消去レーザパワーとの関係線図
である。
1 基板、2 誘電体層、3 磁性薄膜、4(へへ田)
ヨd “↓dOMd
のcD寸N
′1”fN)玉量FIG. 1 is a cross-sectional structural diagram of a magneto-optical recording medium according to an embodiment of the present invention, and FIG. 2 shows the content of Sm in the AIN film and the reproduction CN ratio.
FIG. 3 is a relationship diagram between optimum recording laser power and erasing laser power. 1 Substrate, 2 Dielectric layer, 3 Magnetic thin film, 4 (Heheda)
Yod "↓dOMd's cD dimension N '1" fN) Ball amount
Claims (1)
容易軸を有する磁性薄膜を備えたものにおいて、前記誘
電体層がサマリウムを含む窒化アルミニウム膜であるこ
とを特徴とする光磁気記録媒体。1) A magneto-optical device comprising a magnetic thin film having an axis of easy magnetization perpendicular to the substrate surface on a substrate via a dielectric layer, wherein the dielectric layer is an aluminum nitride film containing samarium. recoding media.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8525189A JPH02265043A (en) | 1989-04-04 | 1989-04-04 | Magneto-optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8525189A JPH02265043A (en) | 1989-04-04 | 1989-04-04 | Magneto-optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02265043A true JPH02265043A (en) | 1990-10-29 |
Family
ID=13853353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8525189A Pending JPH02265043A (en) | 1989-04-04 | 1989-04-04 | Magneto-optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02265043A (en) |
-
1989
- 1989-04-04 JP JP8525189A patent/JPH02265043A/en active Pending
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