JPH02125477A - Visible light emitting element - Google Patents
Visible light emitting elementInfo
- Publication number
- JPH02125477A JPH02125477A JP63277315A JP27731588A JPH02125477A JP H02125477 A JPH02125477 A JP H02125477A JP 63277315 A JP63277315 A JP 63277315A JP 27731588 A JP27731588 A JP 27731588A JP H02125477 A JPH02125477 A JP H02125477A
- Authority
- JP
- Japan
- Prior art keywords
- energy gap
- light emitting
- type
- active layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 11
- 125000005842 heteroatom Chemical group 0.000 abstract description 4
- 230000010355 oscillation Effects 0.000 abstract description 4
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は波長が０．６μ以下の可視領域の光を発振する
発光素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a light emitting element that oscillates light in the visible region with a wavelength of 0.6 μm or less.
従来、この種の可視光発光素子は、ｒ１９Ｂ６年７月１
８日、応用物理学会結晶工学分科会第３回結晶工学シン
ポジウム、 ＩＩ−Ｖｌ族化合物の結晶成長と評価、
“ｚｎ５＠ 、 Ｚｎ ＳＳｅ混晶のＭＯＣＶＤ成長”
、別府達部著、第３９〜４２頁」に開示されるものがあ
る。これは、ＧａＡｓ基板上に、この基板に格子整合す
る直接遷移型のＩＩ−Ｖｌ族化合物半導体であるＺｎｘ
Ｃｄ、、 Ｓｙ Ｓｅ＋−、の四元混晶を、エピタキ
シャル成長させ、波長が０．６ ｎ以下の可視光を発振
するペテロ接合構造の発光層を形成するものであった。Conventionally, this type of visible light emitting device
8th, 3rd Crystal Engineering Symposium, Crystal Engineering Subcommittee, Japan Society of Applied Physics, Crystal Growth and Evaluation of II-Vl Group Compounds,
“Zn5@, MOCVD growth of Zn SSe mixed crystal”
, by Tatsube Beppu, pp. 39-42. This is a direct transition type II-Vl group compound semiconductor Znx that is lattice matched to the GaAs substrate.
A quaternary mixed crystal of Cd, SySe+- was grown epitaxially to form a light-emitting layer with a Peter junction structure that oscillated visible light with a wavelength of 0.6 nm or less.
然し乍ら、上述した従来発光素子においては、波長が０
．６μ以下の発光層として、ＧａＡｓ基板に格子整合す
る材料系、即ちＺｎｘ Ｃｄ＋−、、ｓｙ ５ｅｌ−Ｆ
材を用いたので、例えば発光層を発振効率の良いダブル
ヘテロ構造にした場合でも、第２図に示す如く、クラッ
ド層と活性層とのエネルギーギャップの巾は：、 Ｚｎ
ＳＳｅの２．７５ｅＶからＺｎ Ｃｄ Ｓの３．Ｏｅ
Ｖ迄の０．２５ｅＶに亘る領域内にしか実現できないた
め、発振効率が低くなり、例えばクラッド層と活性層と
のエネルギーギャップの差が０．３ｅＶ以上を要する室
温連続発振の半導体レーザー等を得ることができないと
いう問題点があった。However, in the conventional light emitting device described above, the wavelength is 0.
．． As a light emitting layer of 6μ or less, a material system lattice-matched to the GaAs substrate, that is, Znx Cd+-, sy 5el-F
For example, even if the light-emitting layer has a double heterostructure with high oscillation efficiency, the width of the energy gap between the cladding layer and the active layer is: Zn, as shown in Figure 2.
from 2.75 eV for SSe to 3. for ZnCdS. Oe
Since this method can only be realized within the range of 0.25 eV up to V, the oscillation efficiency is low, and for example, a room temperature continuous wave semiconductor laser, etc., which requires an energy gap difference of 0.3 eV or more between the cladding layer and the active layer, etc. can be obtained. The problem was that it could not be done.
本発明の目的は、上述の問題点に鑑み、クラッド層と活
性層とのエネルギーギャップの差を０．３ｅＶ以上とし
、光の発振効率が向上できる可視先発光素子を提供する
ものである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to provide a visible first light element in which the energy gap difference between the cladding layer and the active layer is 0.3 eV or more, and the light oscillation efficiency can be improved.
本発明″１よ上述した目的を達成するため、ＩｎＰ基板
上に、該１ｎＰ基板に格子整合するＺｎｘ Ｃｄ、−、
５ｅｙＴ４１＋−ｙ混晶を社料として、ダブルヘテロ構
造を形成したものである。In order to achieve the above-mentioned object of the present invention "1", on an InP substrate, Znx Cd, -, which is lattice matched to the 1nP substrate,
A double heterostructure is formed using a 5eyT41+-y mixed crystal as a material.
本発明においては、ＩｎＰ基板上に、これに格子整合す
るｎ−ｖｉ族化合物半導体のＺｎｘ Ｃｄ１−Ｘ５ｅｙ
Ｔ＠＋−ｙ混晶を材料として、ダブルヘテロ構造を形成
したので、ダブルヘテロ構造におけるクラフト層と活性
層とのエネルギーギャップの差は０．３ｅＶ以上取れる
。In the present invention, Znx Cd1-X5ey, which is an n-vi group compound semiconductor that is lattice matched to the InP substrate, is
Since a double heterostructure is formed using T@+-y mixed crystal as a material, the difference in energy gap between the craft layer and the active layer in the double heterostructure can be 0.3 eV or more.
〔実施例〕
本発明発光素子に係る一実施例を、第１図にダブルヘテ
ロの構造図を示して説明する。[Example] An example of the light emitting device of the present invention will be described with reference to a double hetero structural diagram shown in FIG. 1.
即ち、この発光素子は、Ｐ型ＩｎＰ基板１上に、例えば
ベガード（Ｖｅｇａｒｄ）の法則により組成比が、ｘ＝
０．４７及び７−０．５４で格子整合する混晶ＺｎｘＣ
ｄ＋−ｘ Ｓａｙ Ｔｅ＋−ｙのうち、第２図に示すよ
うに、エネルギーギャップが２．５２ｅＶと最も大きい
Ｐ型のＺｎ Ｓｅｙ Ｔｅ＋−ｙクラッド層２と、エネ
ルギーギャップが２．２０ｅＶと最も小さく、極性のな
いＺｎｘ Ｃｄ。That is, this light emitting element is formed on a P-type InP substrate 1 with a composition ratio of x=
Mixed crystal ZnxC with lattice matching at 0.47 and 7-0.54
Among d+-x Say Te+-y, as shown in FIG. 2, the P-type Zn Sey Te+-y cladding layer 2 has the largest energy gap of 2.52 eV, and the smallest energy gap of 2.20 eV. Znx Cd without polarity.
Ｓｅ活性層３と、エネルギーギャップが２．５２ｅＶと
最も大きいｎ型のＺｎ Ｓｅｙ Ｔｅ＋−ｙクラッド層
４とを順次積層して、ダブルヘテロ構造を形成したもの
である。A double heterostructure is formed by sequentially stacking a Se active layer 3 and an n-type Zn Sey Te+-y cladding layer 4 having the largest energy gap of 2.52 eV.
斯くして、かかる発光素子に順方向の電圧を印加すると
、Ｐ型Ｚｎ Ｓｅｙ Ｔｅ＋−ｙクラッド層２ヶら正孔
及びｎ型Ｚｎ Ｓｅｙ Ｔｅ＋−ｙクラフト層４から電
子が夫々Ｚｎｘ ｃｄ、−、Ｓｅ活性層３に導入される
。そして、上記クラッド層２，４と活性層３とのエネル
ギーギャップの差は、０．３２ｅＶであるため、電子及
び正孔は、有効に上記活性層３内に、閉じ込められ、発
光再結合を起こし、光を発振する。この時発振される光
の波長λは、次式より約Ｑ、５６／ｎと算出される。Thus, when a forward voltage is applied to such a light emitting device, holes are generated from the two P-type Zn Sey Te+-y cladding layers and electrons from the n-type Zn Sey Te+-y cladding layer 4, respectively. Se is introduced into the active layer 3. Since the difference in energy gap between the cladding layers 2 and 4 and the active layer 3 is 0.32 eV, electrons and holes are effectively confined within the active layer 3, causing radiative recombination. , oscillates light. The wavelength λ of the light oscillated at this time is calculated as approximately Q, 56/n from the following equation.
λ（Ｉｒｍ）ｓｖｌ、２４／Ｅｇ（ｅＶ）但し、Ｅｇは
活性層３のエネルギーギャップ値であり、約２．２０ｅ
ｖである。λ(Irm)svl, 24/Eg(eV) However, Eg is the energy gap value of the active layer 3, approximately 2.20e
It is v.
従って、活性層とクラフト層とのエネルギーギャップの
差が０．３ｅＶ以上のダブルヘテロ構造を有し、波長が
０．６μ以下の可視光を発振する高効率発光ダイオード
又は室温連続発振できる半導体レーザーが実現できる。Therefore, a high-efficiency light emitting diode that has a double heterostructure with an energy gap difference of 0.3 eV or more between the active layer and the craft layer and that emits visible light with a wavelength of 0.6 μ or less or a semiconductor laser that can continuously oscillate at room temperature is required. realizable.
尚、活性層３としてのＺｎｘ Ｃｄ＋−ｘ Ｓｅは、Ｉ
ｎＰ基板上に格子整合するＺｎｘ Ｃｄ１−＊ Ｓｅｙ
Ｔｅ＋−ｙ （ｙ ４１）に代えても良い。Incidentally, Znx Cd+-x Se as the active layer 3 is I
Znx Cd1-*Sey lattice matched on nP substrate
It may be replaced with Te+-y (y 41).
〔発明の効果〕 □
以上説明したように本発明によれば、・ＩｎＰ基板に格
子整合するＺｎｘ Ｃｄ＋−ｘ Ｓａｙ Ｔｅ＋−ｙ混
晶を用・いて、ダブルヘテロ構造を形成したので、活性
層とクラッド層とのエネルギーギャップの差が０．３ｅ
Ｖ以上取れ、活性層に有効なキャリアの閉じ込めが実現
できるため、波長が０．６ｎ以下の可視光を発振する高
効率発光ダイオード及び室温連続発振半導体レーザー等
を得ることができる等の特有の効果により上述の課題を
解決し得る。[Effects of the Invention] □ As explained above, according to the present invention, a double heterostructure is formed by using a Znx Cd+-x Say Te+-y mixed crystal that is lattice-matched to an InP substrate. The difference in energy gap with the cladding layer is 0.3e
Since it is possible to obtain more than V and achieve effective carrier confinement in the active layer, it has unique effects such as making it possible to obtain high-efficiency light emitting diodes and room temperature continuous wave semiconductor lasers that oscillate visible light with a wavelength of 0.6 nm or less. The above-mentioned problem can be solved by this method.
第１図は本発明発光素子の実施例に係わるダブルヘテロ
の構造図、第２図はエネルギーギャップと格子定数との
特性図である。
１−Ｐ型１ｎＰ基板、２ ・Ｐ型Ｚｌｌ Ｓｅｙ Ｔｅ
１−ｙクラッド層、３−Ｚｒ＋ｘ Ｃｄ、−、Ｓｅ活性
層、４ ＝−ｎ型Ｚｎ５ｅｙ Ｔｅ１リクラッド層。FIG. 1 is a structural diagram of a double hetero in accordance with an embodiment of the light emitting device of the present invention, and FIG. 2 is a characteristic diagram of energy gap and lattice constant. 1-P type 1nP substrate, 2 ・P type Zll Sey Te
1-y cladding layer, 3-Zr+x Cd,-,Se active layer, 4 =-n-type Zn5ey Te1 recladding layer.
Claims (1)
Ｃｄ＿１＿−＿ｘＳｅｙＴｅ＿１＿−＿ｙ混晶を材料と
して、ダブルヘテロ構造を形成したことを特徴とする可
視光発光素子。On the InP substrate, Zn_x is lattice matched to the InP substrate.
A visible light emitting device characterized in that a double heterostructure is formed using a Cd_1_-_xSeyTe_1_-_y mixed crystal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63277315A JPH02125477A (en) | 1988-11-04 | 1988-11-04 | Visible light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63277315A JPH02125477A (en) | 1988-11-04 | 1988-11-04 | Visible light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02125477A true JPH02125477A (en) | 1990-05-14 |
Family
ID=17581826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63277315A Pending JPH02125477A (en) | 1988-11-04 | 1988-11-04 | Visible light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02125477A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296718A (en) * | 1991-02-21 | 1994-03-22 | Seiwa Electric Mfg. Co., Ltd. | Light emitting semiconductor device having multilayer structure |
| EP0807983A2 (en) * | 1996-05-10 | 1997-11-19 | Nec Corporation | Semiconductor device having II-VI compound semiconductor layer containing te |
| US6178190B1 (en) | 1997-08-04 | 2001-01-23 | Nec Corporation | II-VI compound semiconductor light emitting device |
| EP1416544A4 (en) * | 2001-08-10 | 2006-10-25 | Ii-vi compound semiconductor crystal and photo-electric conversion function element |
-
1988
- 1988-11-04 JP JP63277315A patent/JPH02125477A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296718A (en) * | 1991-02-21 | 1994-03-22 | Seiwa Electric Mfg. Co., Ltd. | Light emitting semiconductor device having multilayer structure |
| EP0807983A2 (en) * | 1996-05-10 | 1997-11-19 | Nec Corporation | Semiconductor device having II-VI compound semiconductor layer containing te |
| EP0807983A3 (en) * | 1996-05-10 | 2000-04-26 | Nec Corporation | Semiconductor device having II-VI compound semiconductor layer containing te |
| US6178190B1 (en) | 1997-08-04 | 2001-01-23 | Nec Corporation | II-VI compound semiconductor light emitting device |
| EP1416544A4 (en) * | 2001-08-10 | 2006-10-25 | Ii-vi compound semiconductor crystal and photo-electric conversion function element |
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