KR100287200B1 - Semiconductor laser diode - Google Patents

Semiconductor laser diode Download PDF

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Publication number
KR100287200B1
KR100287200B1 KR1019930021281A KR930021281A KR100287200B1 KR 100287200 B1 KR100287200 B1 KR 100287200B1 KR 1019930021281 A KR1019930021281 A KR 1019930021281A KR 930021281 A KR930021281 A KR 930021281A KR 100287200 B1 KR100287200 B1 KR 100287200B1
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South Korea
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layer
active layer
type
laser diode
semiconductor laser
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KR1019930021281A
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Korean (ko)
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KR950012861A (en
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김택
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윤종용
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: A semiconductor laser diode is provided to lower a threshold current value and a driving current value and increase a characteristics temperature by heightening a hetero-barrier between an active layer and a clad layer. CONSTITUTION: A p type AlPSb clad layer(9), a p type InGaP conductive layer(6), and a p type GaAs cap layer(7) are formed sequentially on an active layer(4). An n type AlPSb clad layer(8), an n type GaAs buffer layer(2) on an n type GaAs substrate(1) under the active layer(4). A characteristics of a laser diode semiconductor is improved by heightening a height of a hetero-barrier. Accordingly, a threshold value and a driving current value is lowered by heightening the height of the hetero-barrier. In addition, a characteristics temperature increased thereby. The active layer(4) is selected from a group including InGaP, InGaAlP, InGaAs, GaAs, and AlGaAs.

Description

반도체 레이저 다이오드Semiconductor laser diode

제1도는 종래의 반도체 레이저 다이오드의 층구조를 나타내는 단면도.1 is a cross-sectional view showing the layer structure of a conventional semiconductor laser diode.

제2도는 본 발명에 의한 반도체 레이저 다이오드의 층구조를 나타내는 단면도.2 is a cross-sectional view showing the layer structure of a semiconductor laser diode according to the present invention.

제3도는 III-V족 화합물의 에너지 밴드갭 다이어그램.3 is an energy bandgap diagram of a group III-V compound.

본 발명은 반도체 레이저 다이오드에 관한 것으로, 특히 III-V족 화합물 반도체를 이용한 반도체 레이저 다이오드에 관한 것이다. 일반적으로 반도체 레이저 소자는 P-N접합을 기본으로 하여 양자전자(Quantum Electron)의 개념을 포함하는 반도체 소자로서, 반도체 물질로 구성된 박막, 즉 활성층에 전류를 주입하여 인위적으로 전자-정공재결합을 유도함으로써 재결합에 따르는 감소 에너지에 해당하는 빛을 발진하게 되는 것을 그 원리로 하고 있다.The present invention relates to a semiconductor laser diode, and more particularly to a semiconductor laser diode using a III-V compound semiconductor. Generally, a semiconductor laser device is a semiconductor device including a concept of quantum electrons based on a PN junction, and recombines by artificially inducing electron-hole recombination by injecting current into a thin film made of a semiconductor material, that is, an active layer. The principle is to emit light corresponding to the reduced energy.

그 중에서, 단파장 레이저 다이오드는 정보처리기기, 광측정기기, 의료기기, 플라스틱 광통신, POS(Point of Sales) 시스템 등에 널리 응용되고 있는 바, 기록 밀도를 높히기 위해서는 단파장화 및 고출력화가 필수적으로 요구된다.Among them, short wavelength laser diodes are widely applied to information processing devices, optical measuring devices, medical devices, plastic optical communication, point of sales (POS) systems, etc., and short wavelengths and high outputs are required to increase recording density.

최근 반도체 레이저의 성능은, 파장을 결정하는 재료의 개발과, 임계전류값, 광출력, 효율, 단일파장, 스펙트럼선폭 따위의 특성과 신뢰성을 결정하는 에피택셜(Epitaxial) 성장기술 및 미세가공 기술의 진보에 의하여 현저한 발전을 거듭하고 있다.In recent years, the performance of semiconductor lasers includes the development of materials that determine wavelength, epitaxial growth and micromachining techniques that determine the characteristics and reliability of critical current values, light output, efficiency, single wavelength, and spectral line width. Remarkable progress is being made by progress.

제1도는 종래의 단파장 레이저 다이오드의 층구조를 나타내는 단면도이다.1 is a cross-sectional view showing the layer structure of a conventional short wavelength laser diode.

제1도를 참조하면, 활성층(4)상에 p형 크래드층(5), p형 통전용이층(6) 및 p형 캡층(7)이 차례로 형성되어 있고, 활성층(4)의 아래쪽에는 n형 크래드층(3) 및 n형 버퍼층(2)이 n형 기판(1)상에 형성되어 있다.Referring to FIG. 1, a p-type cladding layer 5, a p-type conductive layer 6, and a p-type cap layer 7 are sequentially formed on the active layer 4, and the lower side of the active layer 4 is formed. An n-type cladding layer 3 and an n-type buffer layer 2 are formed on the n-type substrate 1.

상술한 종래의 단파장 레이저 다이오드는 활성층으로 InGaP 혹은 InGaAlP를 사용하고, 크래드층으로는 InGaAlP 혹은 InAlP를 사용한다.The conventional short wavelength laser diode described above uses InGaP or InGaAlP as the active layer, and InGaAlP or InAlP as the clad layer.

반도체 레잊의 재료로서, AlGaInP계의 레이져는 MOCVD법의 결정성장에 의해 최초로 실현된 것으로써, 실온 연속발진이 가능한 캐리어의 주입에 의한 반도체 레이져로서 III-V족 화합물 반도체 레이져 중 가장 짧은 0.6㎛대(帶)의 파장을 지닌 적색 가시광 레이져이다. 또한 계측 따위에 널리 사용되는 헬륨-네온 레이져를 대체하는 것으로서, 현재 널리 실용화되어 지고 있는 것은 활성층이 GaAs 기판과 격자정합을 이루는 InGaP, 크래드층이 InGaAl인 InGaP/InGaAlP계이다.AlGaInP-based laser is the first material realized by the crystal growth of MOCVD method, and it is the semiconductor laser by injection of carrier which can be continuously oscillated at room temperature. It is a red visible light laser with a wavelength of (帶). In addition, as a replacement for helium-neon laser, which is widely used for measurement, the most widely used is InGaP / InGaAlP type, in which the active layer is InGaP lattice matched with GaAs substrate, and the clad layer is InGaAl.

그러나, 상기의 물질계들은 활성층과 크래드층 간의 에너지 밴드갭 차이가 작은 관계로, 온도가 상승하거나 주입 전류밀도가 커지면 활성층에서 크래드층으로의 전자의 오버플로(Overflow)가 발생하여 레이징(Lasing)을 하지 않게 된다.However, the above-described material systems have a small difference in energy bandgap between the active layer and the cladding layer. Accordingly, when the temperature rises or the injection current density increases, overflow of electrons from the active layer to the cladding layer may occur. Lasing is not done.

또한, 활성층으로 GaAs 기판과 격자정합이 잘 되는 In0.5Ga0.5P를 사용했을 경우에 발진파장은 670nm대이며, 조성을 변화시켜서 인장변형 (tensile strain)을 주거나 Al을 첨가한 4원 혼정계인 InGahaAlP를 활성층으로 사용하여 활성층의 에너지 밴드갭을 증가시킴으로써 파장은 500nm 대까지 낮출 수 있지만, 이때는 활성층과 크래드층 간의 이종장벽의 높이가 더욱 낮아지게 되어 상온에서의 발진이 어려워지게 된다.In the case of using In 0.5 Ga 0.5 P, which is well matched with GaAs substrate as the active layer, the oscillation wavelength is 670 nm, and InGahaAlP is a four-way mixed crystal system in which the composition is changed to give tensile strain or Al is added. By increasing the energy bandgap of the active layer by using the active layer, the wavelength can be lowered to the 500 nm band, but at this time, the height of the dissimilar barrier between the active layer and the clad layer is further lowered, making it difficult to oscillate at room temperature.

따라서, 본 발명의 목적은 상기 종래 기술의 문제점을 근본적으로 해결하여 문턱 전류값 및 구동전류값이 낮아지며 고출력 동작 및 고온발진이 가능하고 특성 온도(Characteristic Temperature)가 증가시킬 수 있는 반도체 레이저 다이오드를 제공하는 데 있다.Accordingly, an object of the present invention is to fundamentally solve the problems of the prior art to provide a semiconductor laser diode that can lower the threshold current value and drive current value, high output operation and high temperature oscillation, and increase the characteristic temperature. There is.

이러한 본 발명의 목적을 달성하기 위한 본 발명에 의한 반도체 레이저 다이오드는, 활성층 및 크래드층을 포함하는 반도체 레이저 다이오드에 있어서, 상기 크래드층은 AlPSb로 구성됨에 그 특징이 있다.The semiconductor laser diode according to the present invention for achieving the object of the present invention, the semiconductor laser diode comprising an active layer and a clad layer, characterized in that the clad layer is composed of AlPSb.

보다 구체적으로는, 상기 활성층은 InGaP, InGaAlP, InGaAs, GaAs 및 AlGaAs로 이루어진 군에서 선택된 어느 하나로 구성된다.More specifically, the active layer is composed of any one selected from the group consisting of InGaP, InGaAlP, InGaAs, GaAs and AlGaAs.

상기의 본 발명에 의한 레이저 다이오드에 의하면, 활성층과 크래드층 간의 이종장벽을 높힘으로써, 문턱 전류값 및 구동전류값이 낮아지며 고출력 동작 및 고온 발진이 가능하고 특성 온도(Characteristic Temperature)가 증가한다.According to the laser diode according to the present invention, by increasing the heterogeneous barrier between the active layer and the cladding layer, the threshold current value and the driving current value are lowered, high output operation and high temperature oscillation are possible, and the characteristic temperature is increased.

이하, 도면을 참조하여 본 발명의 일예를 구체적으로 설명한다.Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

제2도는 본 발명의 일예를 설명하기 위한 반도체 레이저 다이오드의 개략적 단면도이고, 제3도는 III-V족 화합물의 에너지 밴드갭 다이어그램이다. 제2도에서 제1도와 동일한 참조번호는 동일한 부재를 나타낸다.FIG. 2 is a schematic cross-sectional view of a semiconductor laser diode for explaining an example of the present invention, and FIG. 3 is an energy bandgap diagram of a group III-V compound. In Fig. 2, the same reference numerals as those in Fig. 1 denote the same members.

제2도를 참조하면, 활성층(4)상에는 p형 AlPSb 크래드층(9), p형 InGaP 통전용이층(6) 및 p형 GaAs 캡층(7)이 차례로 형성되어 있고, 활성층(4)의 아래에는 n형 AlPSb 크래드층(8) 및 n형 GaAs버퍼층(2)이 n형 GaAs기판(1)상에 형성되어 있다.Referring to FIG. 2, a p-type AlPSb cladding layer 9, a p-type InGaP passivation layer 6, and a p-type GaAs cap layer 7 are sequentially formed on the active layer 4, and the active layer 4 is formed. Below the n-type AlPSb cladding layer 8 and the n-type GaAs buffer layer 2 are formed on the n-type GaAs substrate 1.

전술한 바와 같이, 단파장 레이저 다이오드에 있어서 가장 성행되어 극복되어야 할 문제는 활성층과 크래드층간의 이종장벽을 높히는 것이다. 이것은 DH (Double Hetero) 구조의 기본 개념이 되는 것으로서, 반도체 레이저 다이오드 특성의 대부분은 활성층과 크래드층간의 이종장벽의 높이가 결정한다.As described above, the most prevalent problem for short wavelength laser diodes is to increase the heterogeneous barrier between the active layer and the cladding layer. This is the basic concept of the DH (Double Hetero) structure, and most of the characteristics of the semiconductor laser diode are determined by the height of the heterogeneous barrier between the active layer and the clad layer.

따라서, 본 발명에서는 크래드층 물질로서 AlPSb를 사용하였는 바, 이 물질은 제3도에 도시된 바와 같이, GaAs와 격자정합이 되는 III-V족 화합물 중 에너지 밴드갭이 가장 큰 물질로서 활성층과 크래드층 간의 이종장벽의 높이를 크게 하므로, 이종장벽이 작아서 발생했던 종래 기술의 문제점을 근본적으로 해결할 수 있다.Therefore, in the present invention, AlPSb was used as the cladding layer material. As shown in FIG. 3, the material has the largest energy bandgap among the group III-V compounds that are lattice matched with GaAs. Since the height of the heterogeneous barrier between the cladding layers is increased, it is possible to fundamentally solve the problem of the prior art, which is caused by the heterogeneous barrier being small.

즉, 본 발명에 의한 반도체 레이저 다이오드에 따르면, 활성층과 크래드층 간의 이종장벽이 높아지므로, 문턱 전류값과 구동 전류값이 낮아지고 고출력 동작 및 고온 발진이 가능 하며 특성 온도가 증가한다.That is, according to the semiconductor laser diode according to the present invention, since the heterogeneous barrier between the active layer and the cladding layer is increased, the threshold current value and the driving current value are lowered, high output operation and high temperature oscillation are possible, and the characteristic temperature is increased.

여기서, 상기 활성층(4)을 구성하는 물질은 바람직하기로는 InGaP, InGaAlP, InGaAs, GaAs 및 AlGaAs로 이루어진 군에서 선택된 어느 하나이다. 즉, 본 발명은 활성층으로 InGaP 혹은 InGaAlP를 사용하는 단파장 반도체 레이저 다이오드 뿐만 아니라, 활성층으로 InGaAs를 사용하는 경우나 활성층으로 GaAs 혹은 AlGaAs를 사용하는 IR(Infra-red) 반도체 레이저 다이오드에도 모두 적용될 수 있다.Here, the material constituting the active layer 4 is preferably any one selected from the group consisting of InGaP, InGaAlP, InGaAs, GaAs and AlGaAs. That is, the present invention can be applied not only to a short wavelength semiconductor laser diode using InGaP or InGaAlP as an active layer, but also to an case of using InGaAs as an active layer or to an infrared (IR) semiconductor laser diode using GaAs or AlGaAs as an active layer. .

또한 본 발명의 일예를 n형 기판을 사용하는 경우를 들어 설명하였지만, p형 기판을 사용하는 경우에도 그대로 적용될 수 있음은 물론이다.In addition, although an example of the present invention has been described in the case of using an n-type substrate, it can be applied as it is, even in the case of using a p-type substrate.

이상, 본 발명을 일예를 들어 설명하였지만, 본 발명은 상술한 일예에 한정되지 않으며, 당 분야에 통상의 지식을 가진 자라면 본 발명의 범위 내에서 다양한 변형이 가능함을 알 수 있을 것이다.As mentioned above, although the present invention has been described as an example, the present invention is not limited to the above-described example, and those skilled in the art will appreciate that various modifications are possible within the scope of the present invention.

Claims (1)

n형 및 p형 크래드층들 사이에 개재된 활성층으로 이루어진 더블헤테로 접합 구조의 반도체 레이저 다이오드에 있어서,In a double-heterojunction semiconductor laser diode composed of an active layer interposed between n-type and p-type cladding layers, 상기 활성층은 InGaP, InGaAlP, InGaAs, GaAs 및 AlGaAs 등으로 이루어진 군에서 선택된 어느 하나로 구성되고,The active layer is composed of any one selected from the group consisting of InGaP, InGaAlP, InGaAs, GaAs and AlGaAs, 상기 크래드층은 AlPSb로 구성되는 것을 특징으로 하는 반도체 레이저 다이오드.The cladding layer is a semiconductor laser diode, characterized in that composed of AlPSb.
KR1019930021281A 1993-10-14 1993-10-14 Semiconductor laser diode KR100287200B1 (en)

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